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31.发明授权Semiconductor wafer, semiconductor device, and method for producing semiconductor wafer 有权半导体晶片，半导体器件及半导体晶片的制造方法公开(公告)号：US08507952B2
公开(公告)日：2013-08-13
申请号：US13495746
申请日：2012-06-13
IPC分类号： H01L21/02
CPC分类号： H01L21/02639 , H01L21/02381 , H01L21/0243 , H01L21/0245 , H01L21/02532 , H01L21/02546
摘要： To improve the flatness of the surface and improve the reliability of a semiconductor device when expitaxially growing semiconductor crystal layers of different types on a single silicon wafer, provided is a semiconductor wafer which includes: a base wafer having a silicon crystal in the surface thereof, the silicon crystal having a first dent and a second dent; a first Group IVB semiconductor crystal located in the first dent and exposed; a second Group IVB semiconductor crystal located in the second dent; and a Group III-V compound semiconductor crystal located above the second Group IVB semiconductor crystal in the second dent and exposed.
摘要翻译： 为了提高表面的平坦度，提高在单晶硅晶片上外延生长不同种类的半导体晶体层时的半导体器件的可靠性，提供了一种半导体晶片，其包括：在其表面具有硅晶体的基底晶片， 所述硅晶体具有第一凹陷和第二凹陷; 第一组IVB半导体晶体位于第一凹陷中并暴露; 位于第二凹陷中的第二组IVB半导体晶体; 以及位于第二凹陷中的第二IVB族半导体晶体上方并暴露的III-V族化合物半导体晶体。
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公开(公告)号：US08384822B2
公开(公告)日：2013-02-26
申请号：US13067388
申请日：2011-05-27
IPC分类号： H04N5/225
CPC分类号： H04N5/2254 , H04N5/23209
摘要： A digital camera includes: a mirror box that defines a space in which a light flux from a photographic lens is guided to an imaging unit; a mirror unit that is arranged inside the mirror box and is configured to rotate between a viewing position in which the mirror unit is inserted in a photographic light path from the photographic lens to the imaging unit to reflect the light flux and a photographing position in which the mirror unit is retracted from the photographic light path; and an opening section that discharges from the mirror box air that is moved when the mirror unit is rotated.
摘要翻译： 数码相机包括：镜盒，其限定将摄影镜头的光束引导到成像单元的空间; 反射镜单元，其布置在反射镜盒的内部并且被配置为在观察位置之间旋转，其中镜单元插入到从摄影镜头到成像单元的摄影光路中以反射光通量，以及拍摄位置 镜单元从摄影光路缩回; 以及从反射镜单元旋转时移动的反射镜盒空气排出的开口部。
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公开(公告)号：US20090130419A1
公开(公告)日：2009-05-21
申请号：US12353854
申请日：2009-01-14
申请人： Tomoyuki Takada , Junya Kojima
发明人： Tomoyuki Takada , Junya Kojima
IPC分类号： B32B5/18
CPC分类号： C08J9/26 , B01D67/0023 , B01D67/0083 , B01D67/009 , B01D71/40 , B01D2323/34 , B01D2323/46 , B01D2323/48 , B01D2325/26 , B01D2325/44 , C08J9/06 , C08J2201/0422 , C08J2201/046 , Y10T428/249953
摘要： A foam sheet produced from a foamable composition containing an acid generator that generates acid or a base generator that generates base due to the action of an active energy beam, and containing a compound having decomposing foamable functional group that decomposes and eliminates at least one type of low boiling point volatile substance by reacting with acid or base, makes it possible to obtain a microcellular thin foam that was considered to be difficult to produce thus far, thereby greatly expanding the range of fields in which foams can be used and significantly contributing to industry.
摘要翻译： 一种发泡体组合物，其由含有产生酸的酸发生剂的发泡组合物或由于活性能量束的作用而产生碱的碱发生剂，并且含有具有分解发泡性官能团的化合物，其分解并除去至少一种 低沸点挥发性物质通过与酸或碱反应，使得有可能获得迄今被认为难以生产的微孔薄泡沫，从而大大扩大了可以使用泡沫的领域的范围并且对工业有显着贡献 。
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公开(公告)号：US20080225157A1
公开(公告)日：2008-09-18
申请号：US12068236
申请日：2008-02-04
IPC分类号： H04N5/225
CPC分类号： H04N5/2254 , H04N5/23209
摘要： A digital camera includes: a mirror box that defines a space in which a light flux from a photographic lens is guided to an imaging unit; a mirror unit that is arranged inside the mirror box and is configured to rotate between a viewing position in which the mirror unit is inserted in a photographic light path from the photographic lens to the imaging unit to reflect the light flux and a photographing position in which the mirror unit is retracted from the photographic light path; and an opening section that discharges from the mirror box air that is moved when the mirror unit is rotated.
摘要翻译： 数码相机包括：镜盒，其限定将摄影镜头的光束引导到成像单元的空间; 反射镜单元，其布置在反射镜盒的内部并且被配置为在观察位置之间旋转，其中镜单元插入到从摄影镜头到成像单元的摄影光路中以反射光通量，以及拍摄位置 镜单元从摄影光路缩回; 以及从反射镜单元旋转时移动的反射镜盒空气排出的开口部。
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公开(公告)号：US20080070998A1
公开(公告)日：2008-03-20
申请号：US11576233
申请日：2005-09-29
申请人： Tomoyuki Takada , Junya Kojima , Fumio Jinno
发明人： Tomoyuki Takada , Junya Kojima , Fumio Jinno
IPC分类号： C08J9/00
CPC分类号： G02B6/0041 , C08J9/04 , C08L33/04 , C08L2203/14 , G02B6/0036 , G02B6/0065 , C08L2666/02
摘要： A foam production method including an irradiating step in which an active energy beam is irradiated onto a foamable composition containing an acid generating agent, which generates an acid, or a base generating agent, which generates a base, due to an action of an active energy beam, and containing a compound which has a decomposable/foamable functional group, which decomposes and eliminates one or more kinds of volatile substances with a low boiling point by reacting with the acid or base; and a subsequent foaming step in which the foamable composition is foamed under controlled pressure in a temperature region where the volatile substances with a low boiling point are decomposed and being eliminated.
摘要翻译： 一种泡沫制造方法，其特征在于，包括照射步骤，其中活性能量束由于活性能量的作用而被照射到产生酸的产生酸的发酸性组合物或产生碱的发酵性组合物的发泡性组合物上 并且含有具有可分解/可发泡官能团的化合物，其通过与酸或碱反应而分解并消除一种或多种具有低沸点的挥发性物质; 以及随后的发泡步骤，其中可发泡组合物在受控压力下在低沸点挥发性物质分解并消除的温度区域中发泡。
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36.发明申请Method of judging quality of semiconductor epitaxial crystal wafer and wafer manufacturing method using the same 审中-公开判断半导体外延晶体晶片的质量的方法和使用其的晶片制造方法公开(公告)号：US20060234400A1
公开(公告)日：2006-10-19
申请号：US10546289
申请日：2004-02-19
CPC分类号： G01N21/1717
摘要： In a method of determining the quality of a semiconductor epitaxial crystal wafer having a buffer structure portion comprised of epitaxial layers the semiconductor epitaxial crystal wafer (S) is irradiated with pulsed exciting light (5A) to modulate an internal electric field of the buffer structure portion, the electric transport properties deriving from the crystal quality of the buffer structure of the semiconductor epitaxial crystal wafer (S) are predicted based on a spectral difference in reflectance in reflection probe light (3B) from the semiconductor epitaxial crystal wafer (S), to determine the crystal quality of the buffer structure portion. The crystal quality may also be determined based on electric field strength calculated from Franz-Keldysh oscillation originating in the semiconductor chemical compound of the buffer structure portion.
摘要翻译： 在确定具有由外延层构成的缓冲结构部分的半导体外延晶体晶片的质量的方法中，半导体外延晶体晶片（S）用脉冲激光（5A）照射以调制缓冲结构的内部电场 基于来自半导体外延晶体晶片（S）的反射探测光（3B）的反射率的光谱差，预测从半导体外延晶体晶片（S）的缓冲结构的晶体质量得到的电输送特性， ，以确定缓冲结构部分的晶体质量。 晶体质量也可以基于源自缓冲结构部分的半导体化合物的Franz-Keldysh振荡计算的电场强度来确定。
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公开(公告)号：US20060210785A1
公开(公告)日：2006-09-21
申请号：US10564791
申请日：2004-07-16
申请人： Tomoyuki Takada , Kunya Kojima
发明人： Tomoyuki Takada , Kunya Kojima
IPC分类号： B32B3/26
CPC分类号： C08J9/26 , B01D67/0023 , B01D67/0083 , B01D67/009 , B01D71/40 , B01D2323/34 , B01D2323/46 , B01D2323/48 , B01D2325/26 , B01D2325/44 , C08J9/06 , C08J2201/0422 , C08J2201/046 , Y10T428/249953
摘要： The present invention discloses a foam sheet and its production process comprising the formation of a plurality of independent cells and/or a plurality of continuous cells. The foam sheet is produced from a foamable composition that contains an acid generator that generates an acid or a base generator that generates a base due to the action of an active energy beam and a compound that has a decomposing foarmable functional group that decomposes and eliminates one or more types of low boiling point volatile substances by reacting with the acid or base.
摘要翻译： 本发明公开了泡沫片及其制造方法，其包括形成多个独立的细胞和/或多个连续细胞。 泡沫片材由可发泡组合物制成，该组合物含有产生酸或碱产生剂的酸产生剂，该酸或碱产生剂由于活性能量束的作用而产生碱，并且具有分解可发泡官能团的化合物，其分解并消除一种 或更多种类的低沸点挥发性物质与酸或碱反应。
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38.发明授权Method and system for manufacturing III-V Group compound semiconductor and III-V Group compound semiconductor 失效III-V族化合物半导体和III-V族化合物半导体的制造方法和系统公开(公告)号：US06875273B2
公开(公告)日：2005-04-05
申请号：US10145713
申请日：2002-05-16
IPC分类号： H01L21/20 , C23C16/44 , C23C16/455 , C30B25/14 , C30B29/40
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/455 , C23C16/45561 , C23C16/45572 , C23C16/45578 , C23C16/45591 , C30B25/14 , C30B29/40 , C30B29/403 , C30B29/406
摘要： In a semiconductor manufacturing system for manufacturing compound semiconductor by MOCVD, a lead-in member is provided for guiding feed gas supplied from a feed gas supply unit onto the surface of a semiconductor substrate disposed in a reactor, a main body of the lead-in member is constituted as a hollow member to form a feed gas guide passage for conducting the feed gas in an prescribed direction and is formed with multiple orifices, and the feed gas in the feed gas guide passage is jetted from the orifices in a direction perpendicular to the prescribed direction so that the semiconductor substrate is bathed in a feed gas flow of uniform amount jetted from the lead-in member in this manner. Furthermore, a pressure differential produced between the inner side and outer side of the nozzle member enables the feed gas jetted from the nozzle member to flow over the whole surface of the substrate at a uniform flow rate. The multiple feed gases are led to the vicinity of the substrate individually and the blow gas blows the multiple feed gases toward the substrate to favorably from desired thin film crystal.
摘要翻译： 在通过MOCVD制造化合物半导体的半导体制造系统中，提供了一种引入构件，用于将从进料气体供应单元供应的进料气体引导到设置在反应器中的半导体基板的表面上，引入件的主体 构件构成为中空构件，以形成用于沿预定方向导入进料气体的进料气体引导通道，并且形成有多个孔，并且进料气体引导通道中的进料气体从孔口沿垂直于 以使得半导体衬底以这种方式浸入从引入构件喷射的均匀量的进料气体流中。 此外，在喷嘴构件的内侧和外侧之间产生的压力差使得从喷嘴构件喷射的进料气体以均匀的流速流过基板的整个表面。 多个进料气体被单独地引导到基材附近，并且吹气将多个进料气体朝向基板吹送，以期望从期望的薄膜晶体。
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公开(公告)号：US6100105A
公开(公告)日：2000-08-08
申请号：US852898
申请日：1997-05-09
CPC分类号： C23C16/45572 , C23C16/455 , C30B25/10 , C30B25/14 , H01L33/007
摘要： A device for the production of a semiconductor compound by means of a metal organic vapor phase epitaxy method, has a structure including a metallic member disposed at a part brought into contact with an upstream flow of a raw material gas and another part for growing a compound semiconductor, wherein the metallic member is cooled to not higher than 300.degree. C. The present invention provides a device for the production of a semiconductor compound with high productivity using a metallic material, wherein processing precision is high and the risk of breakage is low.
摘要翻译： 通过金属有机气相外延法制造半导体化合物的装置具有包括设置在与原料气体的上游流动接触的部分的金属部件和用于生长化合物的另一部分的结构 半导体，其中金属构件被冷却至不高于300℃。本发明提供一种使用金属材料生产高生产率的半导体化合物的装置，其中加工精度高并且破损的风险低。
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40.发明申请SEMICONDUCTOR WAFER, METHOD OF PRODUCING SEMICONDUCTOR WAFER, ELECTRONIC DEVICE, AND METHOD OF PRODUCING ELECTRONIC DEVICE 有权半导体晶体管，半导体晶体管的制造方法，电子器件及其制造方法公开(公告)号：US20110316051A1
公开(公告)日：2011-12-29
申请号：US13255648
申请日：2010-03-08
IPC分类号： H01L29/165 , H01L21/20
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/02447 , H01L21/0245 , H01L21/02452 , H01L21/02463 , H01L21/02538 , H01L21/02546 , H01L21/02642 , H01L29/107 , H01L29/73 , H01L29/7371 , H01L29/772
摘要： The semiconductor wafer includes: a base wafer; and an inhibition layer that is disposed on the base wafer as one piece or to be separate portions from each other, and inhibits growth of a crystal of a compound semiconductor, where the inhibition layer has a plurality of first opening regions that have a plurality of openings penetrating the inhibition layer and leading to the base wafer, each of the plurality of first opening regions includes therein a plurality of first openings disposed in the same arrangement, some of the plurality of first openings are first element forming openings each provided with a first compound semiconductor on which an electronic element is to be formed, and the other of the plurality of first openings are first dummy openings in which no electronic element is to be formed.
摘要翻译： 半导体晶片包括：基底晶片; 以及抑制层，其一体地设置在所述基底晶片上或者彼此分离，并且抑制化合物半导体的晶体的生长，其中所述抑制层具有多个第一开口区域，所述第一开口区域具有多个 穿过所述抑制层并通向所述基底晶片的开口，所述多个第一开口区域中的每一个在其中包括设置在相同布置中的多个第一开口，所述多个第一开口中的一些是第一元件形成开口，每个元件形成开口设置有第一 其上形成有电子元件的复合半导体，并且多个第一开口中的另一个是其中不形成电子元件的第一虚拟开口。
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