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    Method for Producing Optoelectronic Semiconductor Chips, and Optoelectronic Semiconductor Chip
    33.
    发明申请
    Method for Producing Optoelectronic Semiconductor Chips, and Optoelectronic Semiconductor Chip 有权

    公开(公告)号：US20220384680A1

    公开(公告)日：2022-12-01

    申请号：US17765657

    申请日：2020-09-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Felix Feix ,  Ines Pietzonka ,  Petrus Sundgren

    IPC: H01L33/30 ,  H01L33/00 ,  H01L25/075 ,  H01L33/06

    Abstract: In an embodiment a method for producing optoelectronic semiconductor chips includes A) growing an AlInGaAsP semiconductor layer sequence on a growth substrate along a growth direction, wherein the semiconductor layer sequence includes an active zone for radiation generation, and wherein the active zone is composed of a plurality of alternating quantum well layers and barrier layers, B) generating a structured masking layer, C) regionally intermixing the quantum well layers and the barrier layers by applying an intermixing auxiliary through openings of the masking layer into the active zone in at least one intermixing region and D) singulating the semiconductor layer sequence into sub-regions for the semiconductor chips, wherein the barrier layers in A) are grown from [(AlxGa1-x)yIn1-y]zP1-z with x≥0.5, and wherein the quantum well layers are grown in A) from [(AlaGa1-a)bIn1-b]cP1-c with o

    Optoelectronic component and method of manufacturing an optoelectronic component
    34.
    发明授权
    Optoelectronic component and method of manufacturing an optoelectronic component 有权

    公开(公告)号：US11063182B2

    公开(公告)日：2021-07-13

    申请号：US16499490

    申请日：2018-05-17

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Petrus Sundgren ,  Wolfgang Schmid

    IPC: H01L33/38 ,  H01L33/00 ,  H01L33/14 ,  H01L33/30 ,  H01L33/02

    Abstract: An optoelectronic component includes first and second semiconductor layers and an active layer that generates electromagnetic radiation, wherein the active layer is disposed between the first and second semiconductor layers, a recess in the first semiconductor layer, a front side provided for coupling out the electromagnetic radiation, a first electrical connection layer and a second electrical connection layer disposed on a rear side opposite the front side, wherein the first electrical connection layer is arranged at least partially in the recess, and a contact zone with a dopant of a second conductivity type different from the first conductivity type, wherein the contact zone adjoins the recess, and the first semiconductor layer and the second semiconductor layer are highly doped to prevent diffusion of the dopant from the contact zone into the first semiconductor layer and diffusion of the dopant from the contact zone into the second semiconductor layer.

    Light emitting diode chip having temperature compensation of the wavelength
    36.
    发明授权
    Light emitting diode chip having temperature compensation of the wavelength 有权

    公开(公告)号：US10217896B2

    公开(公告)日：2019-02-26

    申请号：US15532236

    申请日：2015-11-25

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Andreas Rudolph ,  Petrus Sundgren ,  Ivar Tangring

    IPC: H01L33/06 ,  H01L33/08

    Abstract: An optoelectronic semiconductor chip is disclosed. In an embodiment the optoelectronic semiconductor chip includes a p-type semiconductor region, an n-type semiconductor region, and an active layer arranged between the p-type semiconductor region and the n-type semiconductor region. The active layer is designed as a multiple quantum well structure, wherein the multiple quantum well structure has a first region of alternating first quantum well layers and first barrier layers and a second region having at least one second quantum well layer and at least one second barrier layer. The at least one second quantum well layer has an electronic band gap (EQW2) that is less than the electronic band gap (EQW1) of the first quantum well layers, and the at least one second barrier layer has an electronic band gap (EB2) that is greater than the electronic band gap (EB1) of the first barrier layers.

    Semiconductor layer sequence and method of producing the same
    37.
    发明授权
    Semiconductor layer sequence and method of producing the same 有权

    公开(公告)号：US09653646B2

    公开(公告)日：2017-05-16

    申请号：US15034565

    申请日：2014-11-04

    Applicant: OSRAM Opto Semiconductors GmbH

    Inventor： Jens Ebbecke ,  Claudia Kauss ,  Petrus Sundgren

    IPC: H01L33/02 ,  H01L33/08 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30

    CPC classification number: H01L33/08 ,  H01L33/0062 ,  H01L33/025 ,  H01L33/06 ,  H01L33/30

    Abstract: A semiconductor layer sequence includes an n-conducting n-type side, a p-conducting p-type side, and an active zone between the sides, the active zone simultaneously generating a first radiation having a first wavelength and a second radiation having a second wavelength, the active zone including at least one radiation-active layer having a first material composition that generates the first radiation, the at least one radiation-active layer is oriented perpendicular to a growth direction of the semiconductor layer sequence, the active zone includes a multiplicity of radiation-active tubes having a second material composition and/or having a crystal structure that generates the second radiation, which crystal structure deviates from the at least one radiation-active layer, and the radiation-active tubes are oriented parallel to the growth direction, the radiation-active tubes having an average diameter of 5 nm to 100 nm and an average surface density of the radiation-active tubes of 108 1/cm2 to 1011 1/cm2.

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