Dynamic mapping of applications on NVRAM/DRAM hybrid memory

    公开(公告)号:US10338837B1

    公开(公告)日:2019-07-02

    申请号:US15946600

    申请日:2018-04-05

    Abstract: This disclosure relates to allocating memory resources of a computing device comprising non-volatile random access memory (NVRAM) and dynamic random access memory (DRAM). An exemplary method is performed for every independently executable component of an application and includes determining attributes of the component. The method also includes associating the component with a memory profile of a plurality of memory profiles based on the attributes, wherein each memory profile of the plurality of memory profiles specifies a number of banks of the NVRAM and a number of banks of the DRAM. The method also includes causing the computing device to generate an assignment of the component to banks of the NVRAM and DRAM based on the memory profile associated with the component so the computing device can execute the component using the banks of the NVRAM and DRAM based on the assignment.

    Systems and methods for providing non-power-of-two flash cell mapping
    37.
    发明授权
    Systems and methods for providing non-power-of-two flash cell mapping 有权
    提供非功率二闪存单元映射的系统和方法

    公开(公告)号:US09552163B1

    公开(公告)日:2017-01-24

    申请号:US14791340

    申请日:2015-07-03

    Abstract: Systems, methods, and computer programs are disclosed for providing compressed data storage using non-power-of-two flash cell mapping. One embodiment of a method comprises receiving one or more compressed logical pages to be stored in a NAND flash memory. Binary data in the one or more logical pages is transformed to a quinary representation. The quinary representation comprises a plurality of quinary bits. A binary representation of each of the plurality of quinary bits is transmitted to the NAND flash memory. The binary representation of each of the plurality of quinary bits is converted to a quinary voltage for a corresponding cell in a physical page in the NAND flash memory.

    Abstract translation: 公开了系统,方法和计算机程序,用于使用非二功能闪存单元映射提供压缩数据存储。 一种方法的一个实施例包括接收要存储在NAND闪速存储器中的一个或多个压缩逻辑页面。 一个或多个逻辑页面中的二进制数据被转换为五进制表示。 五进制表示包括多个五进制位。 多个五进制位中的每一个的二进制表示被发送到NAND闪速存储器。 多个Quinary位中的每一个的二进制表示被转换为NAND闪速存储器中的物理页面中的对应单元的二次电压。

    Systems and methods for providing improved latency in a non-uniform memory architecture
    38.
    发明授权
    Systems and methods for providing improved latency in a non-uniform memory architecture 有权
    用于在非均匀存储器架构中提供改进的延迟的系统和方法

    公开(公告)号:US09542333B2

    公开(公告)日:2017-01-10

    申请号:US14560450

    申请日:2014-12-04

    Abstract: Systems, methods, and computer programs are disclosed for allocating memory in a portable computing device having a non-uniform memory architecture. One embodiment of a method comprises: receiving from a process executing on a first system on chip (SoC) a request for a virtual memory page, the first SoC electrically coupled to a second SoC via an interchip interface, the first SoC electrically coupled to a first local volatile memory device via a first high-performance bus and the second SoC electrically coupled to a second local volatile memory device via a second high-performance bus; determining whether a number of available physical pages on the first and second local volatile memory devices exceeds a minimum threshold for initiating replication of memory data between the first and second local volatile memory devices; and if the minimum threshold is exceeded, allocating a first physical address on the first local volatile memory device and a second physical address on the second local volatile memory device to a single virtual page address.

    Abstract translation: 公开了用于在具有非均匀存储器架构的便携式计算设备中分配存储器的系统,方法和计算机程序。 一种方法的一个实施例包括:从在第一片上系统(SoC)上执行对虚拟存储器页的请求的处理,所述第一SoC经由芯片间接口电耦合到第二SoC,所述第一SoC电耦合到 第一本地易失性存储器设备经由第一高性能总线,并且所述第二SoC经由第二高性能总线电耦合到第二本地易失性存储器设备; 确定所述第一和第二本地易失性存储器设备上的多个可用物理页是否超过用于在所述第一和第二本地易失性存储器设备之间启动存储器数据的复制的最小阈值; 并且如果超过所述最小阈值,则将所述第一本地易失性存储器设备上的第一物理地址和所述第二本地易失性存储器设备上的第二物理地址分配到单个虚拟页地址。

Patent Agency Ranking