SPLIT CONDUCTIVE PAD FOR DEVICE TERMINAL
    31.
    发明申请

    公开(公告)号:US20200381344A1

    公开(公告)日:2020-12-03

    申请号:US16424700

    申请日:2019-05-29

    Abstract: Certain aspects of the present disclosure generally relate to a chip package having a split conductive pad for coupling to a device terminal. An example chip package generally includes a layer, a first plurality of conductive pads disposed on the layer, at least one conductive trace disposed on the layer and between the first plurality of conductive pads, and an electrical component having a first terminal coupled to the first plurality of conductive pads and disposed above the at least one conductive trace.

    PACKAGE COMPRISING SIDEWALL INTERCONNECTS CONFIGURED FOR POWER ROUTING

    公开(公告)号:US20240429141A1

    公开(公告)日:2024-12-26

    申请号:US18340556

    申请日:2023-06-23

    Abstract: A device comprising a package. The package comprises a package substrate; a first integrated device coupled to the package substrate through a first plurality of bump interconnects; an encapsulation layer at least partially encapsulating the first integrated device; a plurality of post interconnects located in the encapsulation layer; a metallization portion coupled to the plurality of post interconnects; a second integrated device coupled to the metallization portion through a second plurality of bump interconnects; and a plurality of side wall interconnects coupled to the encapsulation layer and the metallization portion.

    PACKAGE COMPRISING INTEGRATED DEVICES COUPLED THROUGH A BRIDGE

    公开(公告)号:US20220375838A1

    公开(公告)日:2022-11-24

    申请号:US17328666

    申请日:2021-05-24

    Abstract: A package comprising a first integrated device comprising a first plurality of under bump metallization interconnects; a second integrated device comprising a second plurality of under bump metallization interconnects; a bridge coupled to the first integrated device and the second integrated device; an encapsulation layer at least partially encapsulating the first integrated device, the second integrated device, and the bridge; a metallization portion located over the first integrated device, the second integrated device, the bridge and the encapsulation layer, where the metallization portion includes at least one dielectric layer and a plurality of metallization interconnects; a first plurality of pillar interconnects coupled to the first plurality of under bump metallization interconnects, the first plurality of interconnects located in the encapsulation layer; and a second plurality of pillar interconnects coupled to the second plurality of under bump metallization interconnects, the second plurality of pillar interconnects located in the encapsulation layer.

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