公开(公告)号：US07534731B2

公开(公告)日：2009-05-19

申请号：US11694643

申请日：2007-03-30

申请人： Kimberly G. Reid ,  Anthony Dip

发明人： Kimberly G. Reid ,  Anthony Dip

IPC分类号： H01L21/31 ,  H01L21/469

CPC分类号： H01L21/0214 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/3144

摘要： A method for growing an oxynitride film on a substrate includes positioning the substrate in a process chamber, heating the process chamber, flowing a wet process gas comprising water vapor and a nitriding gas comprising nitric oxide into the process chamber. The wet process gas and the nitriding gas form a processing ambient that reacts with the substrate such that an oxynitride film grows on the substrate. In yet another embodiment, the method further comprises flowing a diluting gas into the process chamber while flowing the wet process gas to control a growth rate of the oxynitride film. In another embodiment, the method further comprises annealing the substrate and the oxynitride film in an annealing gas. According to embodiments of the method where the substrate is silicon, a silicon oxynitride film forms that exhibits a nitrogen peak concentration of at least approximately 6 atomic % and an interface state density of less than approximately 1.5 ×10 12 per cc.

摘要翻译： 用于在衬底上生长氧氮化物膜的方法包括将衬底定位在处理室中，加热处理室，使包含水蒸气的湿法工艺气体和包含一氧化氮的氮化气体流入处理室。 湿法工艺气体和氮化气体形成与衬底反应的处理环境，使得氧氮化物膜在衬底上生长。 在另一个实施方案中，该方法还包括使稀释气体流入处理室，同时使湿法气体流动以控制氮氧化物膜的生长速率。 在另一个实施例中，该方法还包括在退火气体中退火衬底和氧氮化物膜。 根据其中衬底是硅的方法的实施方案，形成氧氮化硅膜，其表现出至少约6原子％的氮峰浓度和小于约1.5×10 12 / cc的界面态密度。

公开(公告)号：US07358194B2

公开(公告)日：2008-04-15

申请号：US11206199

申请日：2005-08-18

申请人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen John Leith ,  Seungho Oh

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02532 ,  C23C16/24 ,  C23C16/28 ,  C23C16/4408 ,  C23C16/45523 ,  C30B25/02 ,  C30B29/06 ,  H01L21/0237 ,  H01L21/02381 ,  H01L21/0245 ,  H01L21/02505 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/3185

摘要： A method is provided for forming a Si film in sequential deposition process. The method includes providing a substrate in a process chamber, forming a chlorinated Si film by exposing the substrate to a chlorinated silane gas, and dry etching the chlorinated Si film to reduce the chlorine content of the Si film. The Si film may be deposited selectively or non-selectively on the substrate and the deposition may be self-limiting or non-self-limiting. Other embodiments provide a method for forming SiGe films in a sequential deposition process.

摘要翻译： 提供了用于在顺序沉积工艺中形成Si膜的方法。 该方法包括在处理室中提供衬底，通过将衬底暴露于氯化硅烷气体形成氯化Si膜，并干蚀刻氯化Si膜以降低Si膜的氯含量。 Si膜可以选择性地或非选择性沉积在衬底上，并且沉积可以是自限制性的或非限制性的。 其他实施例提供了在顺序沉积工艺中形成SiGe膜的方法。

公开(公告)号：US20070238302A1

公开(公告)日：2007-10-11

申请号：US11393736

申请日：2006-03-31

申请人： Anthony Dip ,  Allen Leith ,  Seungho Oh

发明人： Anthony Dip ,  Allen Leith ,  Seungho Oh

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/02046 ,  H01L21/02063 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02658 ,  H01L21/67109

摘要： A method is provided for oxide removal from a substrate. The method includes providing the substrate in a process chamber where the substrate has an oxide layer formed thereon, and performing a sequential oxide removal process. The sequential oxide removal process includes exposing the substrate at a first substrate temperature to a flow of a first etching gas containing F2 to partially remove the oxide layer from the substrate, raising the temperature of the substrate from the first substrate temperature to a second substrate temperature, and exposing the substrate at the second temperature to a flow of a second etching gas containing H2 to further remove the oxide layer from the substrate. In one embodiment, a film may be formed on the substrate following the sequential oxide removal process.

摘要翻译： 提供了从基板去除氧化物的方法。 该方法包括在基板具有形成在其上的氧化物层的处理室中提供基板，并且执行顺序的氧化物去除工艺。 顺序氧化物去除工艺包括将衬底在第一衬底温度下暴露于含有F 2 N的第一蚀刻气体的流动以从衬底部分地去除氧化物层，从而将衬底的温度从 将第一衬底温度升至第二衬底温度，并将衬底在第二温度下暴露于含有H 2 N 2的第二蚀刻气体的流动，以进一步从衬底去除氧化物层。 在一个实施例中，可以在顺序氧化物去除工艺之后在衬底上形成膜。

公开(公告)号：US20070231757A1

公开(公告)日：2007-10-04

申请号：US11277814

申请日：2006-03-29

申请人： Anthony Dip ,  Eric Malstrom

发明人： Anthony Dip ,  Eric Malstrom

IPC分类号： F23C5/00

CPC分类号： H01L21/0214 ,  C30B25/14 ,  C30B31/16 ,  C30B35/00 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3145 ,  H01L21/324 ,  H01L21/67109 ,  Y10S438/935

摘要： A gas delivery system for supplying a process gas from a gas supply to a thermal processing furnace, a thermal processing furnace equipped with the gas delivery system, and methods for delivering process gas to a thermal processing furnace. The gas delivery system comprises a plurality of regulators, such as mass flow controllers, in a process gas manifold coupling a gas supply with a thermal processing furnace. The regulators establish a corresponding plurality of flows of a process gas at a plurality of flow rates communicated by the process gas manifold to the thermal processing furnace. The gas delivery system may be a component of the thermal processing furnace that further includes a liner that surrounds a processing space inside the thermal processing furnace.

摘要翻译： 一种用于将气体从气体供给到热处理炉的气体输送系统，配备有气体输送系统的热处理炉，以及将处理气体输送到热处理炉的方法。 气体输送系统包括多个调节器，例如质量流量控制器，其在将气体供应与热处理炉连接的工艺气体歧管中。 调节器以工艺气体歧管连接到热处理炉的多个流速建立相应的多个工艺气体流。 气体输送系统可以是热处理炉的组件，其还包括围绕热处理炉内的处理空间的衬套。

公开(公告)号：US07205187B2

公开(公告)日：2007-04-17

申请号：US11035730

申请日：2005-01-18

申请人： Allen John Leith ,  Anthony Dip ,  Seungho Oh

发明人： Allen John Leith ,  Anthony Dip ,  Seungho Oh

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/32055 ,  C23C16/045 ,  C23C16/24 ,  H01L21/76877

摘要： A method is provided for depositing a silicon-containing film in a micro-feature on a substrate by a low pressure deposition process in a processing system. A silicon-containing film can be formed in a micro-feature by providing a substrate in a process chamber of a processing system, and exposing a hexachlorodisilane (HCD) process gas to the substrate. A processing tool containing a processing system for forming a silicon-containing film in a micro-feature using a silicon and chlorine-containing gas such as a HCD process gas is provided. Alternatively, the micro-feature can be exposed to DCS, SiCl4, and SiHCl3 gases. Alternatively, the micro-feature can be exposed to (SiH4+HCl).

摘要翻译： 提供了一种用于在处理系统中通过低压沉积工艺在衬底上的微特征中沉积含硅膜的方法。 通过在处理系统的处理室中提供衬底，并将六氯二硅烷（HCD）工艺气体暴露于衬底，可以在微特征中形成含硅膜。 提供了一种包含用于使用诸如HCD处理气体的含硅气体和含氯气体在微特征中形成含硅膜的处理系统的处理工具。 或者，微特征可以暴露于DCS，SiCl 4和SiHCl 3气体。 或者，微特征可以暴露于（SiH 4+ + HCl）。

公开(公告)号：US20050026459A1

公开(公告)日：2005-02-03

申请号：US10630970

申请日：2003-07-31

申请人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

发明人： David O'Meara ,  Cory Wajda ,  Anthony Dip ,  Michael Toeller ,  Toshihara Furukawa ,  Kristen Scheer ,  Alessandro Callegari ,  Fred Buehrer ,  Sufi Zafar ,  Evgeni Gousev ,  Anthony Chou ,  Paul Higgins

IPC分类号： C23C16/30 ,  H01L21/00 ,  H01L21/28 ,  H01L21/314 ,  H01L21/316 ,  H01L29/51 ,  H01L21/31 ,  H01L21/469

CPC分类号： H01L21/28185 ,  C23C16/308 ,  H01L21/0214 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/28202 ,  H01L21/3144 ,  H01L21/31604 ,  H01L21/31616 ,  H01L21/31637 ,  H01L21/31641 ,  H01L21/31645 ,  H01L21/31662 ,  H01L21/67098 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： Ultra-thin oxynitride layers are formed utilizing low-pressure processing to achieve self-limiting oxidation of substrates and provide ultra-thin oxynitride. The substrates to be processed can contain an initial dielectric layer such as an oxide layer, an oxynitride layer, or a nitride layer, or alternatively can lack an initial dielectric layer. The processing can be carried out using a batch type process chamber or a single-wafer process chamber.

摘要翻译： 使用低压处理形成超薄氧氮化物层，以实现衬底的自限制氧化并提供超薄氧氮化物。 要处理的基板可以包含初始介电层，例如氧化物层，氧氮化物层或氮化物层，或者可以缺少初始介电层。 处理可以使用间歇式处理室或单晶片处理室进行。

公开(公告)号：US5618351A

公开(公告)日：1997-04-08

申请号：US563875

申请日：1995-11-28

申请人： Terry A. Koble, Jr. ,  Anthony Dip ,  Erik H. Engdahl ,  Ian R. Oliver ,  Christopher T. Ratliff

发明人： Terry A. Koble, Jr. ,  Anthony Dip ,  Erik H. Engdahl ,  Ian R. Oliver ,  Christopher T. Ratliff

IPC分类号： H01L21/22 ,  H01L21/00 ,  H01L21/673 ,  C23C16/00

CPC分类号： H01L21/67303 ,  H01L21/67109 ,  H01L21/67309

摘要： Thermal treatment boat comprising a cylinder having a central axis and a plurality of band slots having opposed upper and lower surfaces in planes perpendicular to said central axis and spaced at predetermined locations along said central axis. At least one slot in each set extends around at least 180.degree. and less than of the full circumference of said cylinder. Pairs of adjacent band slots define an annular band therebetween. The height of each slot being from about 3.8 to 12.7 mm. Each of the bands having a height, Height.sub.Band, in mm, according to the equation: ##EQU1## wherein Height.sub.Band is always .ltoreq. wafer thickness; ColumnHeight is the total height of the cylinder, mm; BandSlotHeight is the height of the slot, mm; and NumberBands is the total number of bands in the treatment boat. The cylinder can include a wafer loading effector slot therethrough in a plane of the central axis extending along the length of the cylinder. Each band preferably includes wafer support means for supporting a wafer therein. The wafer support means preferably includes at least three inwardly extending projections. The spacing between the wafer edge and the cylinder wall is within the range of from about 1.5 to 6.3 mm. In the optimum process, the heat provided by the heater is sufficient to raise the temperature of the wafers from 21.degree. C. up to 1100.degree. C. at a rate of from 50.degree. C./min to 100.degree. C./min without causing mechanical damage from thermal stresses to the wafers.

摘要翻译： 热处理舟包括具有中心轴线的圆筒和多个带槽，所述多个带槽在垂直于所述中心轴线的平面中具有相对的上表面和下表面，并沿着所述中心轴线在预定位置间隔开。 每组中的至少一个狭槽围绕至少180°并且小于所述气缸的整个圆周的周长。 成对的相邻带隙在它们之间限定环形带。 每个槽的高度为约3.8至12.7毫米。 每个带具有高度，HeightBand，mm，根据以下等式：其中HeightBand总是

公开(公告)号：US08664102B2

公开(公告)日：2014-03-04

申请号：US12751891

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A Conti

IPC分类号： H01L21/3205 ,  H01L21/4763

CPC分类号： H01L29/4983 ,  H01L29/665 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833

摘要： A semiconducting device with a dual sidewall spacer and method of forming are provided. The method includes: depositing a first spacer layer over a patterned structure, the first spacer layer having a seam propagating through a thickness of the first spacer layer near an interface region of a surface of the substrate and a sidewall of the patterned structure, etching the first spacer layer to form a residual spacer at the interface region, where the residual spacer coats less than the entirety of the sidewall of the patterned structure, depositing a second spacer layer on the residual spacer and on the sidewall of the patterned structure not coated by the residual spacer, the second spacer layer being seam-free on the seam of the residual spacer, and etching the second spacer layer to form a second spacer coating the residual spacer and coating the sidewall of the patterned structure not coated by the residual spacer.

摘要翻译： 提供了具有双侧壁间隔件和成形方法的半导体器件。 该方法包括：在图案化结构上沉积第一间隔层，第一间隔层具有在衬底的表面的界面区附近传播穿过第一间隔层的厚度的接缝和图案化结构的侧壁，蚀刻 第一间隔层，以在界面区域处形成残留间隔物，其中残余间隔物涂覆小于图案化结构的侧壁的整体，在剩余间隔物上和在图案化结构的侧壁上沉积第二间隔层， 所述剩余间隔物，所述第二间隔层在所述残余间隔物的接缝上是无缝的，并且蚀刻所述第二间隔层以形成涂覆所述剩余间隔物并涂覆未被所述残留间隔物涂覆的所述图案化结构的侧壁的第二间隔物。

公开(公告)号：US08465592B2

公开(公告)日：2013-06-18

申请号：US13035049

申请日：2011-02-25

申请人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

发明人： Hitoshi Kato ,  Manabu Honma ,  Anthony Dip

IPC分类号： C23C16/00

CPC分类号： C23C16/45527 ,  C23C16/402 ,  C23C16/45521 ,  C23C16/45551

摘要： A disclosed film deposition apparatus includes a turntable having in one surface a substrate receiving portion along a turntable rotation direction; a first reaction gas supplying portion for supplying a first reaction gas; a second reaction gas supplying portion for supplying a second reaction gas; a separation area between a first process area where the first reaction gas is supplied and a second process area where the second reaction gas is supplied, the separation area including a separation gas supplying portion for supplying a first separation gas in the separation area, and a ceiling surface opposing the one surface to produce a thin space; a center area having an ejection hole for ejecting a second separation gas along the one surface; and an evacuation opening for evacuating the chamber.

摘要翻译： 公开的薄膜沉积设备包括：转台，其在一个表面上具有沿转盘旋转方向的基板接收部分; 用于供给第一反应气体的第一反应气体供给部; 用于供给第二反应气体的第二反应气体供给部; 在供给第一反应气体的第一处理区域和供给第二反应气体的第二处理区域之间的分离区域，分离区域包括用于在分离区域中供给第一分离气体的分离气体供给部，以及分离区域 天花板表面相对于一个表面产生薄的空间; 具有用于沿着所述一个表面喷射第二分离气体的喷射孔的中心区域; 以及用于抽空室的排气口。

公开(公告)号：US20110241128A1

公开(公告)日：2011-10-06

申请号：US12751926

申请日：2010-03-31

申请人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

发明人： David L. O'Meara ,  Anthony Dip ,  Aelan Mosden ,  Pao-Hwa Chou ,  Richard A. Conti

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L21/28247 ,  H01L29/6656

摘要： A semiconducting device with a multilayer sidewall spacer and method of forming are described. In one embodiment, the method includes providing a substrate containing a patterned structure on a surface of the substrate and depositing a first spacer layer over the patterned structure at a first substrate temperature, where the first spacer layer contains a first material. The method further includes depositing a second spacer layer over the patterned substrate at a second substrate temperature that is different from the first substrate temperature, where the first and second materials contain the same chemical elements, and the depositing steps are performed in any order. The first and second spacer layers are then etched to form the multilayer sidewall spacer on the patterned structure.

摘要翻译： 描述了具有多层侧壁间隔件和形成方法的半导体器件。 在一个实施例中，该方法包括在衬底的表面上提供含有图案化结构的衬底，并且在第一衬底温度下在第一衬底温度下沉积在图案化结构上的第一间隔层，其中第一间隔层包含第一材料。 该方法还包括在不同于第一衬底温度的第二衬底温度下在图案化衬底上沉积第二间隔层，其中第一和第二材料含有相同的化学元素，并且沉积步骤以任何顺序进行。 然后蚀刻第一和第二间隔层以在图案化结构上形成多层侧壁间隔物。