摘要:
An apparatus/method may comprise a line narrowed pulsed lithography laser light source which may comprise: a seed pulse providing laser system which may comprise: a first pulsed seed laser producing seed pulses at a rate of X kHz; a second pulsed seed laser producing seed pulses at a rate of X kHz; an amplification system which may comprise: a first amplifier gain system which may comprise a first and a second pulsed gas discharge amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the first seed laser; a second amplifier gain system which may comprise a first and a second pulsed amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the second seed laser.
摘要翻译:一种装置/方法可以包括线窄的脉冲光刻激光光源,其可以包括:提供激光系统的种子脉冲,其可以包括:以X kHz的速率产生种子脉冲的第一脉冲种子激光器; 第二脉冲种子激光器以XkHz的速率产生种子脉冲; 放大系统,其可以包括:第一放大器增益系统,其可以包括第一和第二脉冲气体放电放大器增益介质,每个具有在UV范围内的标称中心波长,并且每个在来自 第一种子激光; 第二放大器增益系统,其可以包括第一和第二脉冲放大器增益介质,每个具有在UV范围内的标称中心波长,并且每个在来自第二种子激光器的输出脉冲上以1/2 X kHz工作。
摘要:
A laser crystallization apparatus and method are disclosed for selectively melting a film such as amorphous silicon that is deposited on a substrate. The apparatus may comprise an optical system for producing stretched laser pulses for use in melting the film. In still another aspect of an embodiment of the present invention, a system and method are provided for stretching a laser pulse. In another aspect, a system is provided for maintaining a divergence of a pulsed laser beam (stretched or non-stretched) at a location along a beam path within a predetermined range. In another aspect, a system may be provided for maintaining the energy density at a film within a predetermined range during an interaction of the film with a shaped line beam.
摘要:
An apparatus/method may comprise a line narrowed pulsed lithography laser light source which may comprise: a seed pulse providing laser system which may comprise: a first pulsed seed laser producing seed pulses at a rate of X kHz; a second pulsed seed laser producing seed pulses at a rate of X kHz; an amplification system which may comprise: a first amplifier gain system which may comprise a first and a second pulsed gas discharge amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the first seed laser; a second amplifier gain system which may comprise a first and a second pulsed amplifier gain medium, each with a nominal center wavelength in the UV range, and each operating at ½ X kHz on output pulses from the second seed laser.
摘要翻译:一种装置/方法可以包括线窄的脉冲光刻激光光源,其可以包括:提供激光系统的种子脉冲,其可以包括:以X kHz的速率产生种子脉冲的第一脉冲种子激光器; 第二脉冲种子激光器以XkHz的速率产生种子脉冲; 放大系统,其可以包括:第一放大器增益系统,其可以包括第一和第二脉冲气体放电放大器增益介质,每个具有在UV范围内的标称中心波长,并且每个在来自 第一种子激光器 第二放大器增益系统,其可以包括第一和第二脉冲放大器增益介质,每个具有在UV范围内的标称中心波长,并且每个在来自第二种子激光器的输出脉冲上以1/2 X kHz工作。
摘要:
An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The target tracking system may provide information enabling the creation of a laser firing control signal, and may comprise a droplet detector comprising a collimated light source directed to intersect a point on a projected delivery path of the target, having a respective oppositely disposed light detector detecting the passage of the target through the respective point, or a detector comprising a linear array of a plurality of photo-sensitive elements aligned to a coordinate axis, the light from the light source intersecting a projected delivery path of the target, at least one of the which may comprise a plane-intercept detection device. The droplet detectors may comprise a plurality of droplet detectors each operating at a different light frequency, or a camera having a field of view and a two dimensional array of pixels imaging the field of view. The apparatus and method may comprise an electrostatic plasma containment apparatus providing an electric plasma confinement field at or near a target ignition site at the time of ignition, with the target tracking system providing a signal enabling control of the electrostatic plasma containment apparatus. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap. The apparatus and method may comprise a magnetic plasma confinement mechanism creating a magnetic field in the vicinity of the target ignition site to confine the plasma to the target ignition site, which may be pulsed and may be controlled using outputs from the target tracking system.
摘要:
An EUV light source apparatus and method are disclosed, which may comprise a pulsed laser providing laser pulses at a selected pulse repetition rate focused at a desired target ignition site; a target formation system providing discrete targets at a selected interval coordinated with the laser pulse repetition rate; a target steering system intermediate the target formation system and the desired target ignition site; and a target tracking system providing information about the movement of target between the target formation system and the target steering system, enabling the target steering system to direct the target to the desired target ignition site. The apparatus and method may comprise a vessel having and intermediate wall with a low pressure trap allowing passage of EUV light and maintaining a differential pressure across the low pressure trap.
摘要:
A technique for bandwidth control of an electric discharge laser. Line narrowing equipment is provided having at least one piezoelectric drive and a fast bandwidth detection means and a bandwidth control having a time response of less than about 1.0 millisecond. In a preferred embodiment wavelength tuning mirror is dithered at dither rates of more than 500 dithers per second within a very narrow range of pivot angles to cause a dither in nominal wavelength values to produce a desired effective bandwidth of series of laser pulses.
摘要:
A narrow band F2 laser system useful for integrated circuit lithography. An output beam from a first F2 laser gain medium is filtered with a pre-gain filter to produce a seed beam having a bandwidth of about 0.1 pm or less. The seed beam is amplified in a power gain stage which includes a second F2 laser gain medium. The output beam of the system is a pulsed laser beam with a full width half maximum band width of about 0.1 pm or less with pulse energy in excess of about 5 mJ. In a preferred embodiment the pre-gain filter includes a wavelength monitor which permits feedback control over the centerline wavelength so that the pre-gain filter optics can be adjusted to ensure that the desired bandwidth range is injected into the power gain stage.
摘要:
The present invention provides a modular high repetition rate ultraviolet gas discharge laser light source for a production line machine. The system includes an enclosed and purged beam path with beam pointing control for delivery the laser beam to a desired location such as the entrance port of the production line machine. In preferred embodiments, the production line machine is a lithography machine and two separate discharge chambers are provided, one of which is a part of a master oscillator producing a very narrow band seed beam which is amplified in the second discharge chamber. This MOPA system is capable of output pulse energies approximately double the comparable single chamber laser system with greatly improved beam quality. A pulse stretcher more than doubles the output pulse length resulting in a reduction in pulse power (mJ/ns) as compared to prior art laser systems. This preferred embodiment is capable of providing illumination at a lithography system wafer plane which is approximately constant throughout the operating life of the lithography system, despite substantial degradation of optical components.
摘要:
A simple, reliable, easy to use method for calculating bandwidth data of very narrow band laser beams based on bandwidth data obtained with a spectrometer in circumstances where the laser bandwidths are not large compared to the slit function of the spectrometer. The slit function of the spectrometer is determined. Spectral data of the laser beam is measured with the spectrometer to produce a measured laser beam spectrum which represents a convolution of the laser beam spectrum and the spectrometer slit function. This measured laser spectrum is then mathematically convolved with the slit function of the spectrometer to produce a doubly convolved spectrum. Bandwidth values representing true laser bandwidths are determined from measured laser spectrum and the doubly convolved spectrum. Preferably the true laser bandwidths are calculated by determining the difference between “twice a measured laser bandwidth” and a corresponding “doubly convolved bandwidth”. This method provides an excellent estimate of the true laser bandwidth because “twice the measured laser bandwidth” represents two laser bandwidths and two spectrometer slit function bandwidths and the “doubly convolved bandwidth” represents one laser bandwidth and two spectrometer slit function bandwidths. Thus, the difference is a representation of the true laser bandwidth. In a preferred embodiment the bandwidth parameters measured are the full width half-maximum bandwidth and the 95% integral bandwidth.
摘要:
A high energy photon source. A pair of plasma pinch electrodes are located in a vacuum chamber. The chamber contains a working gas which includes a noble buffer gas and an active gas chosen to provide a desired spectral line. A pulse power source provides electrical pulses at repetition rates of 1000 Hz or greater and at voltages high enough to create electrical discharges between the electrodes to produce very high temperature, high density plasma pinches in the working gas providing radiation at the spectral line of the source or active gas. A fourth generation unit is described which produces 20 mJ, 13.5 nm pulses into 2 &pgr; steradians at repetition rates of 2000 Hz with xenon as the active gas. This unit includes a pulse power system having a resonant charger charging a charging capacitor bank, and a magnetic compression circuit comprising a pulse transformer for generating the high voltage electrical pulses at repetition rates of 2000 Hz or greater. Gas flows in the vacuum chamber are controlled to assure desired concentration of active gas in the discharge region and to minimize active gas concentration in the beam path downstream of the pinch region. In a preferred embodiment, active gas is injected downstream of the pinch region and exhausted axially through the center of the anode. In another preferred embodiment a laser beam generates metal vapor at a location close to but downstream of the pinch region and the vapor is exhausted axially through the anode.