公开(公告)号：US20230024655A1

公开(公告)日：2023-01-26

申请号：US17858388

申请日：2022-07-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangdon LEE ,  Joonsung KIM ,  Jiwon KIM ,  Jaeho KIM ,  Sukkang SUNG ,  Jong-Min LEE ,  Euntaek JUNG

IPC: H01L27/1157 ,  H01L27/11524 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573

Abstract: Disclosed are semiconductor devices and electronic systems including the same. The semiconductor device may include a stack structure extending in a first direction and including gate electrodes vertically stacked on a substrate, selection structures horizontally spaced apart on the stack structure, an upper isolation structure between the selection structure and extending in the first direction on the stack structure, and vertical structures penetrating the stack structure and the selection structures. The vertical structures include first vertical structures arranged along the first direction and penetrating portions of the upper isolation structure. Each selection structure includes a selection gate electrode and a horizontal dielectric pattern that surrounds top, bottom, and sidewall surfaces of the selection gate electrode. Each selection gate electrode includes a line part extending in the first direction, and an electrode part vertically protruding from the line part and surrounding at least a portion of each first vertical structure.

公开(公告)号：US20200144380A1

公开(公告)日：2020-05-07

申请号：US16445815

申请日：2019-06-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Hwang ,  Joon-Sung LIM ,  Jiyoung KIM ,  Jiwon KIM ,  Woosung YANG

IPC: H01L29/417 ,  H01L27/11556 ,  H01L27/11582

Abstract: Disclosed are three-dimensional semiconductor memory devices and methods of fabricating the same. The three-dimensional semiconductor memory device comprises a substrate that includes a cell array region and a connection region, an electrode structure that includes a plurality of electrodes and a plurality of dielectric layers alternately stacked on the substrate and has a stepwise structure on the connection region, an etch stop pattern that covers the stepwise structure of the electrode structure. The electrode structure and the etch stop pattern extend in a first direction when viewed in plan. The electrode structure has a first width in a second direction intersecting the first direction. The etch stop pattern has a second width in the second direction. The second width is less than the first direction.

公开(公告)号：US20170206863A1

公开(公告)日：2017-07-20

申请号：US15410083

申请日：2017-01-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sungyoun AN ,  Jiwon KIM ,  Hang-Kyu PARK ,  Ochae KWON ,  Dongjun SHIN ,  Bo-Keun KIM

IPC: G09G5/38 ,  G09G3/20 ,  G08B5/36 ,  G06F1/16

CPC classification number: G09G5/38 ,  G06F1/1616 ,  G06F1/1652 ,  G06F1/1677 ,  G06F1/1694 ,  G06F3/0338 ,  G06F3/0481 ,  G06F3/1431 ,  G06F2203/04803 ,  G08B5/36 ,  G09G3/2092 ,  G09G5/14 ,  G09G2340/0464 ,  G09G2340/0492 ,  G09G2340/14

Abstract: Methods and apparatuses are provided for operating an electronic device. An opening of a flexible display unit from a closed position is sensed. The flexible display unit includes a first display area, a second display area, and a status display area disposed between the first display area and the second display area. An open angle between the first display area and the second display area is determined. Status information, which is to be displayed in the status display area, is determined based on the open angle.

公开(公告)号：US20240371396A1

公开(公告)日：2024-11-07

申请号：US18742495

申请日：2024-06-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeongook SONG ,  Jiwon KIM

IPC: G10L25/51 ,  G10L25/03

Abstract: A method of controlling an electronic apparatus may include: acquiring a first audio signal may include an audio signal corresponding to a first audio source and an audio signal corresponding to a second audio source; acquiring a second audio signal by separating the audio signal corresponding to the first audio source from the first audio signal in a bandwidth below a preset frequency; acquiring a third audio signal by separating an audio signal in a bandwidth higher than or equal to the preset frequency from the first audio signal; acquiring a fourth audio signal by combining the second audio signal and the third audio signal; and for each of a plurality of frames constituting the fourth audio signal, acquiring a fifth audio signal by removing the component higher than or equal to the preset frequency.

公开(公告)号：US20240263072A1

公开(公告)日：2024-08-08

申请号：US18354055

申请日：2023-07-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Heesuk WOO ,  Kyusang AHN ,  Jung-Min OH ,  Jiwon KIM ,  Jinkyu ROH ,  Hyojoong YOON ,  Sang Won BAE ,  Kyungmo SUNG

IPC: C09K13/08 ,  H01L21/306

CPC classification number: C09K13/08 ,  H01L21/30604

Abstract: The present disclosure relates to an etchant composition for etching silicon and silicon germanium, and/or a preparation method of a pattern using the etchant composition. The etchant composition may include an oxidizing agent, a fluorine-based compound, a surfactant represented by Chemical Formula 1 or 2, and water. The etchant composition may include the surfactant in an amount of 5% to 40% by weight based on 100% by weight of the etchant composition.

公开(公告)号：US20240203875A1

公开(公告)日：2024-06-20

申请号：US18239504

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jiwon KIM ,  Jiyoung KIM ,  Woosung YANG ,  Sukkang SUNG

IPC: H01L23/528 ,  G11C16/04 ,  H01L25/065 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00

CPC classification number: H01L23/5283 ,  G11C16/0483 ,  H01L25/0652 ,  H10B41/10 ,  H10B41/27 ,  H10B41/35 ,  H10B43/10 ,  H10B43/27 ,  H10B43/35 ,  H10B80/00 ,  H01L2225/06506

Abstract: A semiconductor device including a first semiconductor structure overlapping a second semiconductor structure, the second semiconductor structure having first and second regions and including a plate layer; gate electrodes spaced apart from each other in a first direction; channel structures passing through the gate electrodes; gate separation regions extending in a second direction; first and second upper isolation regions dividing an upper gate electrode into first, second and third sub-gate electrodes between adjacent gate separation regions; and contact plugs extending in the first direction, each of the first and second upper isolation regions has a region extending in a third direction, and the first sub-gate electrode has a first pad region having a first width and a second pad region having a second width narrower than the first width in a fourth direction, and the first sub-gate electrode is connected to one of the contact plugs.

公开(公告)号：US20220312057A1

公开(公告)日：2022-09-29

申请号：US17603134

申请日：2021-09-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Boyoung LEE ,  Koanmo KIM ,  Eunji KIM ,  Jiwon KIM ,  Jaehong LEE

IPC: H04N21/2343 ,  H04N21/81 ,  H04N21/218

Abstract: A method of transmitting video content by using an edge computing service (e.g., a multi-access edge computing (MEC) service) is provided. The method includes obtaining sensor information including orientation information and pupil position information from an electronic device connected to the edge data network, obtaining a first partial image including a user field-of-view image and an extra field-of-view image, the user field-of-view image corresponding to the orientation information, and the extra field-of-view image corresponding to the pupil position information, generating a first frame by encoding the first partial image, and transmitting the generated first frame to the electronic device.

公开(公告)号：US20220139855A1

公开(公告)日：2022-05-05

申请号：US17328176

申请日：2021-05-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Min HWANG ,  Jiwon KIM ,  Jaeho AHN ,  Joon-Sung LIM ,  Sukkang SUNG

IPC: H01L23/00 ,  H01L25/065 ,  H01L25/18 ,  H01L25/00 ,  H01L27/11556 ,  H01L27/11529 ,  H01L27/11582 ,  H01L27/11573 ,  G11C16/08 ,  G11C16/10

Abstract: A semiconductor device and electronic system, the device including a cell structure stacked on a peripheral circuit structure, wherein the cell structure includes a first interlayer dielectric layer and first metal pads exposed at the first interlayer dielectric layer and connected to gate electrode layers and channel regions, the peripheral circuit structure includes a second interlayer dielectric layer and second metal pads exposed at the second interlayer dielectric layer and connected to a transistor, the first metal pads include adjacent first and second sub-pads, the second metal pads include adjacent third and fourth sub-pads, the first and third sub-pads are coupled, and a width of the first sub-pad is greater than that of the third sub-pad, and the second sub-pad and the fourth sub-pad are coupled, and a width of the fourth sub-pad is greater than that of the second sub-pad.

公开(公告)号：US20220102334A1

公开(公告)日：2022-03-31

申请号：US17229062

申请日：2021-04-13

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jiwon KIM ,  Jaeho AHN ,  Sungmin HWANG ,  Joonsung LIM ,  Sukkang SUNG

IPC: H01L25/18 ,  H01L23/00 ,  H01L27/11519 ,  H01L27/11524 ,  H01L27/11526 ,  H01L27/11556 ,  H01L27/11565 ,  H01L27/1157 ,  H01L27/11573 ,  H01L27/11582

Abstract: A semiconductor device includes a first peripheral circuit region comprising a plurality of lower circuitries, a second peripheral circuit region apart from the first peripheral circuit region in a vertical direction, the second peripheral circuit region comprising a plurality of upper circuitries, and a cell region comprising a plurality of word lines, the cell region between the first peripheral circuit region and the second peripheral circuit region in the vertical direction. The plurality of word lines comprise a first word line connected to a first lower circuitry selected from the plurality of lower circuitries and a second word line connected to a first upper circuitry selected from the plurality of upper circuitries.

公开(公告)号：US20180157893A1

公开(公告)日：2018-06-07

申请号：US15821269

申请日：2017-11-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chaekyung LEE ,  Jiwon KIM ,  Won LEE ,  Bo-Keun KIM ,  Inkyeong SHIN

IPC: G06K9/00 ,  G06F21/32

CPC classification number: G06K9/00087 ,  G06F21/32 ,  G06K9/00013

Abstract: An apparatus and method for setting a fingerprint recognition region in an electronic device are provided. An electronic device includes a display, a finger scan sensor overlapped with at least a partial region of the display, and a processor. The processor controls to detect a touch input for at least one object displayed at the display, when detecting a first fingerprint image through a fingerprint recognition region corresponding to the touch input, enlarge a size of the fingerprint recognition region, detect a second fingerprint image through the enlarged fingerprint recognition region, and when having succeeded in user authentication by using the second fingerprint image, perform a function corresponding to the at least one object.