公开(公告)号：US20220246765A1

公开(公告)日：2022-08-04

申请号：US17727038

申请日：2022-04-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Katsuaki TOCHIBAYASHI ,  Ryota HODO ,  Kentaro SUGAYA ,  Naoto YAMADE

IPC: H01L29/786 ,  H01L27/108 ,  H01L29/24 ,  H01L29/66

Abstract: A semiconductor device includes a transistor including, a first to fifth insulator, a first to third oxide, a first to third conductor. An opening reaching the second oxide is provided in the fourth insulator and the fifth insulator. The third oxide, the third insulator, and the third conductor are arranged sequentially from the inner wall side of the opening so as to fill the opening. In the channel length direction of the transistor, at least part of the fourth insulator in a region where the fourth insulator and the second oxide do not overlap with each other is in contact with the first insulator. In the channel width direction of the transistor, at least part of the third oxide in a region where the third oxide and the second oxide do not overlap with each other is in contact with the first insulator.

公开(公告)号：US20220199832A1

公开(公告)日：2022-06-23

申请号：US17606823

申请日：2020-05-12

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Katsuaki TOCHIBAYASHI ,  Hiroaki HONDA ,  Kentaro SUGAYA

IPC: H01L29/786

Abstract: A semiconductor device with small variations in transistor characteristics is provided. The semiconductor device includes an oxide; a first conductor and a second conductor provided apart from each other over the oxide; an insulator in a region between the first conductor and the second conductor over the oxide; and a conductor over the insulator. A side surface of the oxide, a top surface of the first conductor, a side surface of the first conductor, a top surface of the second conductor, and a side surface of the second conductor include regions in contact with a nitride containing silicon.

公开(公告)号：US20220199613A1

公开(公告)日：2022-06-23

申请号：US17691213

申请日：2022-03-10

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Tatsuya ONUKI ,  Katsuaki TOCHIBAYASHI

IPC: H01L27/06 ,  H01L29/45 ,  H01L29/786

Abstract: A semiconductor device having favorable electrical characteristics is provided. The semiconductor device includes a transistor and a capacitor. The transistor includes a first conductor and a second insulator over a first insulator; a third insulator over the first conductor and the second insulator; a fourth insulator over the third insulator; a first oxide over the fourth insulator; a second oxide and a third oxide over the first oxide; a second conductor in contact with a top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the second oxide, and a top surface of the second oxide; a third conductor in contact with the top surface of the third insulator, a side surface of the fourth insulator, a side surface of the first oxide, a side surface of the third oxide, and a top surface of the third oxide; a fourth oxide over the first oxide; a fifth insulator over the fourth oxide; and a fourth conductor over the fifth insulator. The capacitor includes a fifth conductor over the first insulator, the third insulator over the fifth conductor, and the second conductor over the third insulator.

公开(公告)号：US20210183906A1

公开(公告)日：2021-06-17

申请号：US16770670

申请日：2018-12-19

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Ryota HODO ,  Tomoyo KAMOGAWA ,  Katsuaki TOCHIBAYASHI

IPC: H01L27/12 ,  H01L29/24 ,  H01L29/786 ,  H01L29/66

Abstract: A highly reliable semiconductor device having a high on-state current is provided. The semiconductor device includes a first insulator, a second insulator over the first insulator, a first oxide over the first insulator, a second oxide over the first oxide, a first conductor and a second conductor over the second oxide, a third insulator over the first conductor, a fourth insulator over the second conductor, a third oxide over the second oxide, a fifth insulator over the third oxide, a third conductor that is positioned over the fifth insulator and overlaps with the third oxide, a sixth insulator covering the first to fifth insulators, the first oxide, the second oxide, and the first to third conductors, and a seventh insulator over the sixth insulator.

公开(公告)号：US20180040641A1

公开(公告)日：2018-02-08

申请号：US15667863

申请日：2017-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Katsuaki TOCHIBAYASHI ,  Kenichi SHIOHAMA

IPC: H01L27/12 ,  H01L29/24 ,  H01L21/44 ,  H01L29/66 ,  H01L21/467 ,  H01L21/477 ,  H01L29/786 ,  H01L29/10

CPC classification number: H01L27/1225 ,  H01L21/44 ,  H01L21/467 ,  H01L21/477 ,  H01L27/1207 ,  H01L27/1259 ,  H01L29/1054 ,  H01L29/24 ,  H01L29/42376 ,  H01L29/4238 ,  H01L29/45 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device having favorable reliability which is capable of retaining data for a long time is provided. The semiconductor device includes a first gate electrode, a first gate insulator over the first gate electrode, a first oxide over the first gate insulator, a second oxide and a third oxide over the first oxide, a first conductor over the second oxide, a second conductor over the third oxide, a fourth oxide over the first oxide, the first conductor, and the second conductor, a second gate insulator over the fourth oxide, and a second gate electrode over the second gate insulator. The first conductor is in contact with a top surface of the second oxide, a side surface of the second oxide that faces the third oxide, and part of a top surface of the first oxide. The second conductor is in contact with a top surface of the third oxide, a side surface of the third oxide that faces the second oxide, and part of the top surface of the first oxide. The fourth oxide is in contact with part of the top surface of the first oxide between the first conductor and the second conductor.

公开(公告)号：US20170263651A1

公开(公告)日：2017-09-14

申请号：US15450220

申请日：2017-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Katsuaki TOCHIBAYASHI ,  Ryota HODO

IPC: H01L27/12 ,  H01L27/32 ,  H01L23/522 ,  H01L23/528 ,  H01L23/544 ,  H01L29/66

Abstract: A semiconductor device including a transistor having high reliability is provided. The semiconductor device includes a transistor. The transistor includes first and second gate electrodes, a source electrode, a drain electrode, first to third oxides, first and second barrier films, and first and second gate insulators. The first barrier film is located over the source electrode, the second barrier film is located over the drain electrode, and the first and second barrier films each have a function of blocking oxygen and impurities such as hydrogen.

公开(公告)号：US20170186779A1

公开(公告)日：2017-06-29

申请号：US15390894

申请日：2016-12-27

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Daigo ITO ,  Takahisa ISHIYAMA ,  Katsuaki TOCHIBAYASHI ,  Yoshinori ANDO ,  Yasutaka SUZUKI ,  Mitsuhiro ICHIJO ,  Toshiya ENDO ,  Shunpei YAMAZAKI

IPC: H01L27/12 ,  H01L29/786 ,  H01L29/49

CPC classification number: H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1255 ,  H01L29/24 ,  H01L29/4908 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/7869 ,  H01L2224/05 ,  H01L2224/48463

Abstract: A highly reliable semiconductor device which includes an oxide semiconductor is provided. Alternatively, a transistor having normally-off characteristics which includes an oxide semiconductor is provided. The transistor includes a first conductor, a first insulator, a second insulator, a third insulator, a first oxide, an oxide semiconductor, a second conductor, a second oxide, a fourth insulator, a third conductor, a fourth conductor, a fifth insulator, and a sixth insulator. The second conductor is separated from the sixth insulator by the second oxide. The third conductor and the fourth conductor are separated from the sixth insulator by the fifth insulator. The second oxide has a function of suppressing permeation of oxygen as long as oxygen contained in the sixth insulator is sufficiently supplied to the oxide semiconductor through the second oxide. The fifth insulator has a barrier property against oxygen.

公开(公告)号：US20170179298A1

公开(公告)日：2017-06-22

申请号：US15450391

申请日：2017-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Junichi KOEZUKA ,  Toshinari SASAKI ,  Katsuaki TOCHIBAYASHI ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L27/12

CPC classification number: H01L29/78606 ,  G02F1/13306 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/13439 ,  G02F1/136227 ,  G02F1/1368 ,  G02F2201/121 ,  G06F3/0412 ,  H01L27/1225 ,  H01L27/1248 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/15 ,  H01L27/3258 ,  H01L27/3262 ,  H01L29/66742 ,  H01L29/7869

Abstract: A change in electrical characteristics of a semiconductor device including an interlayer insulating film over a transistor including an oxide semiconductor as a semiconductor film is suppressed. The structure includes a first insulating film which includes a void portion in a step region formed by a source electrode and a drain electrode over the semiconductor film and contains silicon oxide as a component, and a second insulating film containing silicon nitride, which is provided in contact with the first insulating film to cover the void portion in the first insulating film. The structure can prevent the void portion generated in the first insulating film from expanding outward.

公开(公告)号：US20170062619A1

公开(公告)日：2017-03-02

申请号：US15235242

申请日：2016-08-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Takashi HAMADA ,  Akihisa SHIMOMURA ,  Satoru OKAMOTO ,  Katsuaki TOCHIBAYASHI

IPC: H01L29/786 ,  H01L29/66 ,  H01L27/12 ,  H01L21/4763 ,  H01L21/465 ,  H01L29/423 ,  H01L21/4757

CPC classification number: H01L29/7869 ,  H01L21/465 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/42372 ,  H01L29/42384 ,  H01L29/66969 ,  H01L29/78648

Abstract: A minute transistor is provided. A transistor with low parasitic capacitance is provided. A transistor having high frequency characteristics is provided. A transistor having a high on-state current is provided. A semiconductor device including the transistor is provided. A semiconductor device having a high degree of integration is provided. A semiconductor device including an oxide semiconductor; a second insulator; a second conductor; a third conductor; a fourth conductor; a fifth conductor; a first conductor and a first insulator embedded in an opening portion formed in the second insulator, the second conductor, the third conductor, the fourth conductor, and the fifth conductor; a region where a side surface and a bottom surface of the second conductor are in contact with the fourth conductor; and a region where a side surface and a bottom surface of the third conductor are in contact with the fifth conductor.

Abstract translation: 提供一分钟晶体管。 提供具有低寄生电容的晶体管。 提供具有高频特性的晶体管。 提供具有高导通状态电流的晶体管。 提供包括晶体管的半导体器件。 提供了具有高集成度的半导体器件。 一种包括氧化物半导体的半导体器件; 第二绝缘体; 第二导体 第三导体; 第四导体 第五个指挥 嵌入在形成于第二绝缘体的开口部的第一导体和第一绝缘体，第二导​​体，第三导体，第四导体和第五导体; 第二导体的侧表面和底表面与第四导体接触的区域; 以及第三导体的侧表面和底表面与第五导体接触的区域。

公开(公告)号：US20160087105A1

公开(公告)日：2016-03-24

申请号：US14853542

申请日：2015-09-14

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Akihisa SHIMOMURA ,  Katsuaki TOCHIBAYASHI ,  Yuta ENDO ,  Shunpei YAMAZAKI

IPC: H01L29/786 ,  H01L21/3213 ,  H01L21/311

CPC classification number: H01L29/7869 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32136 ,  H01L21/32139 ,  H01L27/1225 ,  H01L29/78648

Abstract: A method for manufacturing a semiconductor device, including the steps of forming a semiconductor over a substrate; forming a first conductor over the semiconductor; forming a first insulator over the first conductor; forming a resist over the first insulator; performing light exposure and development on the resist to make a second region and a third region remain and expose part of the first insulator; applying a bias in a direction perpendicular to a top surface of the substrate and generating plasma using a gas containing carbon and halogen; and depositing and etching an organic substance with the plasma. The etching rate of the organic substance is higher than the deposition rate of the organic substance in an exposed part of the first insulator, and the deposition rate of the organic substance is higher than the etching rate of the organic substance in a side surface of the second region.

Abstract translation: 一种制造半导体器件的方法，包括在衬底上形成半导体的步骤; 在半导体上形成第一导体; 在所述第一导体上形成第一绝缘体; 在第一绝缘体上形成抗蚀剂; 在抗蚀剂上进行曝光和显影以使第二区域和第三区域保持并暴露第一绝缘体的部分; 在垂直于衬底的顶表面的方向施加偏压并使用含有碳和卤素的气体产生等离子体; 并用等离子体沉积和蚀刻有机物质。 有机物的蚀刻速度高于第一绝缘体的露出部分中的有机物质的沉积速度，并且有机物质的沉积速度高于有机物的侧表面中的有机物质的蚀刻速率 第二区。