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    Imaging device, operating method thereof, and electronic device
    31.
    发明授权
    Imaging device, operating method thereof, and electronic device 有权

    公开(公告)号：US11431932B2

    公开(公告)日：2022-08-30

    申请号：US17236267

    申请日：2021-04-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro Ohmaru ,  Naoto Kusumoto ,  Kentaro Hayashi

    IPC: H04N5/3745 ,  H01L27/146 ,  H04N5/347 ,  H04N5/369 ,  H04N5/232

    Abstract: An imaging device with low power consumption is provided. The pixel of the imaging device includes first and second photoelectric conversion elements, and first to fifth transistors. A cathode of the first photoelectric conversion element is electrically connected to the first transistor. An anode of a second photoelectric conversion element is electrically connected to the second transistor. Imaging data of a reference frame is obtained using the first photoelectric conversion element, and then imaging data of a difference detection frame is obtained using the second photoelectric conversion element. After the imaging data of the difference detection frame is obtained, a first potential that is a potential of a signal output from the pixel and a second potential that is a reference potential are compared. Whether or not there is a difference between the imaging data of the reference frame and the imaging data of the difference detection frame is determined using the first potential and the second potential.

    Semiconductor device including photoelectric conversion element
    32.
    发明授权
    Semiconductor device including photoelectric conversion element 有权

    公开(公告)号：US11177299B2

    公开(公告)日：2021-11-16

    申请号：US15311261

    申请日：2015-05-27

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Yuki Okamoto ,  Yoshiyuki Kurokawa ,  Hiroki Inoue ,  Takuro Ohmaru

    IPC: H01L27/146 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/12 ,  H01L29/786 ,  H01L31/075 ,  H04N5/225

    Abstract: A solid-state imaging device with high productivity and improved dynamic range is provided. In the imaging device including a photoelectric conversion element having an i-type semiconductor layer, functional elements, and a wiring, an area where the functional elements and the wiring overlap with the i-type semiconductor in a plane view is preferably less than or equal to 35%, further preferably less than or equal to 15%, and still further preferably less than or equal to 10% of the area of the i-type semiconductor in a plane view. Plural photoelectric conversion elements are provided in the same semiconductor layer, whereby a process for separating the respective photoelectric conversion elements can be reduced. The respective i-type semiconductor layers in the plural photoelectric conversion elements are separated by a p-type semiconductor layer or an n-type semiconductor layer.

    Method of operating an imaging device with global shutter system
    33.
    发明授权
    Method of operating an imaging device with global shutter system 有权

    公开(公告)号：US10896923B2

    公开(公告)日：2021-01-19

    申请号：US15258114

    申请日：2016-09-07

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro Ohmaru ,  Naoto Kusumoto

    IPC: H04N5/335 ,  H01L27/146 ,  H01L31/0272 ,  H04N5/3745 ,  H04N5/32 ,  H04N5/353 ,  H04N5/378 ,  H04N5/225

    Abstract: An imaging device that has a structure where a transistor is used in common by a plurality of pixels and is capable of imaging with a global shutter system is provided. A transistor that resets the potential of a charge detection portion, a transistor that outputs a signal corresponding to the potential of the charge detection portion, and a transistor that selects a pixel are used in common by the plurality of pixels. A node AN (a first charge retention portion), a node FD (a second charge retention portion), and a node FDX (the charge detection portion) are provided. Imaging data obtained in the node AN is transferred to the node FD, and the imaging data is sequentially transferred from the node FD to the node FDX to be read.

    Semiconductor device, imaging system, and electronic device
    34.
    发明授权
    Semiconductor device, imaging system, and electronic device 有权

    公开(公告)号：US10306168B2

    公开(公告)日：2019-05-28

    申请号：US15137381

    申请日：2016-04-25

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro Ohmaru

    IPC: H04N5/3745 ,  H04N5/369 ,  H01L27/146 ,  H04N9/04 ,  H01L29/786 ,  H04N5/355

    Abstract: To provide a novel semiconductor device, a semiconductor device capable of operating at a high speed, or a semiconductor device with reduced area, or a semiconductor device with low power consumption. The semiconductor device which has a function of taking a moving image includes a pixel portion including a plurality of pixels, a first circuit, and a second circuit. Each of the plurality of pixels has a function of converting irradiation light to generate first data and a function of generating second data corresponding to a difference between the first data in a first frame period and the first data in a second frame period. The first circuit has a function of converting the second data into a digital signal and outputting the digital signal as compressed data of the moving image. The second circuit has a function of controlling output of the compressed data.

    Memory device including memory circuit and selection circuit
    35.
    发明授权
    Memory device including memory circuit and selection circuit 有权

    公开(公告)号：US10090023B2

    公开(公告)日：2018-10-02

    申请号：US14479707

    申请日：2014-09-08

    Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

    Inventor： Takuro Ohmaru ,  Kiyoshi Kato

    IPC: G11C5/14 ,  H01L27/12 ,  G11C11/403

    Abstract: To provide a memory device with short overhead time and a semiconductor device including the memory device. A memory device includes a first circuit that can retain data and a second circuit by the supply of power supply voltage. The second circuit includes a third circuit that selects a first potential corresponding to the data or a second potential supplied to a first wiring; a first transistor having a channel formation region in an oxide semiconductor film; a capacitor that hold the first potential or the second potential that is selected by the third circuit and supplied through the first transistor; and a second transistor controlling a conduction state between the first circuit and a second wiring that can supply a third potential in accordance with the potential retained in the capacitor.

    Semiconductor device
    39.
    发明授权
    Semiconductor device 有权
    半导体器件

    公开(公告)号：US09455709B2

    公开(公告)日：2016-09-27

    申请号：US14638250

    申请日：2015-03-04

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Takuro Ohmaru ,  Hidetomo Kobayashi

    IPC: H01L27/12 ,  H03K19/00 ,  H01L29/786 ,  H01L29/16

    CPC classification number: H03K19/0008 ,  H01L27/1207 ,  H01L27/1225 ,  H01L29/16 ,  H01L29/7869

    Abstract: A dynamic logic circuit in which the number of elements is reduced, the layout area is reduced, the power loss is reduced, and the power consumption is reduced is provided. A semiconductor device including a dynamic logic circuit includes a first transistor in which a channel is formed in silicon and a second transistor in which a channel is formed in an oxide semiconductor. Here, a structure in which the second transistor is provided over the first transistor can be employed. A structure in which an insulating film is provided over the first transistor, and the second transistor is provided over the insulating film can be employed. A structure in which a top surface of the insulating film is planarized can be employed. A structure in which the second transistor has a region overlapping with the first transistor can be employed.

    Abstract translation: 一种动态逻辑电路，其中元件的数量减少，布局面积减小，功率损耗降低，功耗降低。 包括动态逻辑电路的半导体器件包括其中在硅中形成沟道的第一晶体管和其中在氧化物半导体中形成沟道的第二晶体管。 这里，可以采用在第一晶体管上设置第二晶体管的结构。 可以采用其中绝缘膜设置在第一晶体管上方并且第二晶体管设置在绝缘膜上的结构。 可以使用其中绝缘膜的顶表面被平坦化的结构。 可以采用其中第二晶体管具有与第一晶体管重叠的区域的结构。

    Integrated circuit, method for driving the same, and semiconductor device
    40.
    发明授权
    Integrated circuit, method for driving the same, and semiconductor device 有权
    集成电路及其驱动方法以及半导体器件

    公开(公告)号：US08891286B2

    公开(公告)日：2014-11-18

    申请号：US14257050

    申请日：2014-04-21

    Applicant: Semiconductor Energy Laboratory Co., Ltd.

    Inventor： Masami Endo ,  Takuro Ohmaru

    IPC: G11C11/24 ,  G11C11/00 ,  G11C11/34 ,  G11C8/00 ,  H03K3/356 ,  H03K21/40

    CPC classification number: H03K3/356008 ,  H03K3/012 ,  H03K21/023 ,  H03K21/403

    Abstract: An integrated circuit which can be switched to a resting state and can be returned from the resting state rapidly is provided. An integrated circuit whose power consumption can be reduced without the decrease in operation speed is provided. A method for driving the integrated circuit is provided. The integrated circuit includes a first flip-flop and a second flip-flop including a nonvolatile memory circuit. In an operating state in which power is supplied, the first flip-flop retains data. In a resting state in which supply of power is stopped, the second flip-flop retains data. On transition from the operating state into the resting state, the data is transferred from the first flip-flop to the second flip-flop. On return from the resting state to the operating state, the data is transferred from the second flip-flop to the first flip-flop.

    Abstract translation: 提供一种可以切换到静止状态并且可以从静止状态快速返回的集成电路。 提供一种能够在不降低运行速度的情况下降低功耗的集成电路。 提供了一种用于驱动集成电路的方法。 集成电路包括第一触发器和包括非易失性存储器电路的第二触发器。 在提供电力的操作状态下，第一触发器保持数据。 在停止供电的静止状态下，第二触发器保持数据。 在从操作状态转变到静止状态时，数据从第一触发器传送到第二触发器。 从静止状态返回到工作状态时，数据从第二触发器传送到第一触发器。

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