公开(公告)号：US12154827B2

公开(公告)日：2024-11-26

申请号：US18383086

申请日：2023-10-24

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Toshihiko Takeuchi ,  Tsutomu Murakawa ,  Hiroki Komagata ,  Daisuke Matsubayashi ,  Noritaka Ishihara ,  Yusuke Nonaka

IPC: H01L27/088 ,  H01L21/8234 ,  H01L27/06 ,  H01L29/786 ,  H10B12/00

Abstract: A semiconductor device which has favorable electrical characteristics and can be highly integrated is provided.
The semiconductor device includes a first insulator; an oxide over the first insulator; a second insulator over the oxide; a first conductor over the second insulator; a third insulator in contact with a top surface of the first insulator, a side surface of the oxide, a top surface of the oxide, a side surface of the second insulator, and a side surface of the first conductor; and a fourth insulator over the third insulator. The third insulator includes an opening exposing the first insulator, and the fourth insulator is in contact with the first insulator through the opening.

公开(公告)号：US12048178B2

公开(公告)日：2024-07-23

申请号：US18203699

申请日：2023-05-31

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo ,  Takuya Kawata

IPC: H10K50/13 ,  H10K50/11 ,  H10K50/12 ,  H10K50/15 ,  H10K50/16 ,  H10K59/32 ,  H10K85/30 ,  H10K85/60 ,  H10K101/00 ,  H10K101/10 ,  H10K102/00

CPC classification number: H10K50/131 ,  H10K50/11 ,  H10K50/121 ,  H10K50/15 ,  H10K50/16 ,  H10K59/32 ,  H10K85/342 ,  H10K85/611 ,  H10K85/615 ,  H10K85/622 ,  H10K85/626 ,  H10K85/633 ,  H10K85/636 ,  H10K85/654 ,  H10K85/6572 ,  H10K85/6576 ,  H10K2101/10 ,  H10K2101/27 ,  H10K2101/90 ,  H10K2102/351

Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

公开(公告)号：US11832465B2

公开(公告)日：2023-11-28

申请号：US17834973

申请日：2022-06-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Takahiro Ishisone ,  Nobuharu Ohsawa ,  Yusuke Nonaka ,  Toshiki Sasaki

IPC: H01L51/50 ,  H10K50/11 ,  G09G3/3225 ,  H10K50/12 ,  H10K50/13 ,  H10K50/15 ,  H10K50/16 ,  H10K50/81 ,  H10K50/82 ,  H10K50/84 ,  H10K59/00 ,  H10K59/131 ,  H10K59/121 ,  H10K59/38 ,  H10K101/10 ,  H10K101/40 ,  H10K101/00 ,  H10K101/30

CPC classification number: H10K50/11 ,  G09G3/3225 ,  H10K50/12 ,  H10K50/13 ,  H10K50/131 ,  H10K50/15 ,  H10K50/16 ,  H10K50/81 ,  H10K50/82 ,  H10K50/84 ,  H10K59/00 ,  H10K59/1213 ,  H10K59/131 ,  G09G2300/0426 ,  H10K59/38 ,  H10K2101/10 ,  H10K2101/27 ,  H10K2101/30 ,  H10K2101/40

Abstract: Emission efficiency of a light-emitting element is improved. The light-emitting element has a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material and a host material. The second light-emitting layer includes a phosphorescent material, a first organic compound, and a second organic compound. An emission spectrum of the second light-emitting layer has a peak in a yellow wavelength region. The first organic compound and the second organic compound form an exciplex.

公开(公告)号：US11239237B2

公开(公告)日：2022-02-01

申请号：US16961976

申请日：2019-01-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yusuke Nonaka ,  Noritaka Ishihara ,  Tomoki Hiramatsu ,  Ryunosuke Honda ,  Tomoyo Kamogawa ,  Ryota Hodo ,  Katsuaki Tochibayashi ,  Shunpei Yamazaki

IPC: H01L27/108 ,  H01L21/02 ,  H01L27/1156 ,  H01L29/786

Abstract: A semiconductor device having high operation frequency is provided. The semiconductor device includes a transistor including a first conductive layer, a first insulating layer, a second insulating layer, a first oxide, a second oxide, a third oxide, a third insulating layer, and a second conductive layer that are stacked in this order, and a fourth insulating layer. The first conductive layer and the second conductive layer include a region overlapping with the second oxide. In a channel width direction of the transistor, a level of the bottom surface of the second oxide is from more than or equal to −5 nm to less than 0 nm when a level of a region of the bottom surface of the second conductive layer which does not overlap with the second oxide is regarded as a reference.

公开(公告)号：US10468619B2

公开(公告)日：2019-11-05

申请号：US15954681

申请日：2018-04-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Satoshi Seo ,  Takahiro Ishisone ,  Nobuharu Ohsawa ,  Yusuke Nonaka ,  Toshiki Sasaki

IPC: H01L51/50 ,  H01L27/32 ,  H01L51/52 ,  G09G3/3225

Abstract: Emission efficiency of a light-emitting element is improved. The light-emitting element has a pair of electrodes and an EL layer between the pair of electrodes. The EL layer includes a first light-emitting layer and a second light-emitting layer. The first light-emitting layer includes a fluorescent material and a host material. The second light-emitting layer includes a phosphorescent material, a first organic compound, and a second organic compound. An emission spectrum of the second light-emitting layer has a peak in a yellow wavelength region. The first organic compound and the second organic compound form an exciplex.

公开(公告)号：US10128455B2

公开(公告)日：2018-11-13

申请号：US15258622

申请日：2016-09-07

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yusuke Nonaka ,  Satoshi Seo ,  Harue Osaka ,  Tsunenori Suzuki ,  Takeyoshi Watabe

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01L27/15 ,  H01L29/26 ,  H01L31/12 ,  H01L33/00 ,  H01L51/50 ,  H01L51/52

Abstract: To increase emission efficiency of a fluorescent light-emitting element by efficiently utilizing a triplet exciton generated in a light-emitting layer. The light-emitting layer of the light-emitting element includes at least a host material and a guest material. The triplet exciton generated from the host material in the light-emitting layer is changed to a singlet exciton by triplet-triplet annihilation (TTA). The guest material (fluorescent dopant) is made to emit light by energy transfer from the singlet exciton. Thus, the emission efficiency of the light-emitting element is improved.

公开(公告)号：US09806201B2

公开(公告)日：2017-10-31

申请号：US14636477

申请日：2015-03-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yoshinori Yamada ,  Yusuke Nonaka ,  Masashi Oota ,  Yoichi Kurosawa ,  Noritaka Ishihara ,  Takashi Hamada ,  Mitsuhiro Ichijo ,  Yuji Egi

IPC: H01L29/786 ,  H01L27/1156

CPC classification number: H01L29/78693 ,  H01L27/1156 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: A method for forming an oxide that can be used as a semiconductor of a transistor or the like is provided. In particular, a method for forming an oxide with fewer defects such as grain boundaries is provided. One embodiment of the present invention is a semiconductor device including an oxide semiconductor, an insulator, and a conductor. The oxide semiconductor includes a region overlapping with the conductor with the insulator therebetween. The oxide semiconductor includes a crystal grain with an equivalent circle diameter of 1 nm or more and a crystal grain with an equivalent circle diameter less than 1 nm.

公开(公告)号：US09680028B2

公开(公告)日：2017-06-13

申请号：US14795592

申请日：2015-07-09

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Masashi Tsubuku ,  Yusuke Nonaka ,  Takashi Shimazu ,  Shunpei Yamazaki

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/423

CPC classification number: H01L29/7869 ,  H01L27/1225 ,  H01L29/42384 ,  H01L29/78693

Abstract: The concentration of impurity elements included in an oxide semiconductor film in the vicinity of a gate insulating film is reduced. Further, crystallinity of the oxide semiconductor film in the vicinity of the gate insulating film is improved. A semiconductor device includes an oxide semiconductor film over a substrate, a source electrode and a drain electrode over the oxide semiconductor film, a gate insulating film which includes an oxide containing silicon and is formed over the oxide semiconductor film, and a gate electrode over the gate insulating film. The oxide semiconductor film includes a region in which the concentration of silicon is lower than or equal to 1.0 at. %, and at least the region includes a crystal portion.

公开(公告)号：US09490351B2

公开(公告)日：2016-11-08

申请号：US14643208

申请日：2015-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Honda ,  Takatsugu Omata ,  Yusuke Nonaka

IPC: H01L21/34 ,  H01L29/66 ,  H01L29/423 ,  H01L29/786 ,  H01L21/02 ,  H01L21/44 ,  H01L21/4757 ,  H01L21/477 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L29/66969 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02238 ,  H01L21/02255 ,  H01L21/02565 ,  H01L21/44 ,  H01L21/47573 ,  H01L21/477 ,  H01L29/045 ,  H01L29/24 ,  H01L29/42384 ,  H01L29/66742 ,  H01L29/78603 ,  H01L29/7869

Abstract: An object is to provide a highly reliable semiconductor device having stable electric characteristics by using an oxide semiconductor film having stable electric characteristics. Another object is to provide a semiconductor device having higher mobility by using an oxide semiconductor film having high crystallinity. A crystalline oxide semiconductor film is formed over and in contact with an insulating film whose surface roughness is reduced, whereby the oxide semiconductor film can have stable electric characteristics. Accordingly, the highly reliable semiconductor device having stable electric characteristics can be provided. Further, the semiconductor device having higher mobility can be provided.

公开(公告)号：US09362517B2

公开(公告)日：2016-06-07

申请号：US14548947

申请日：2014-11-20

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Nobuharu Ohsawa ,  Yusuke Nonaka ,  Takahiro Ishisone ,  Satoshi Seo ,  Takuya Kawata

IPC: H01L51/50 ,  H01L51/00

CPC classification number: H01L51/5044 ,  H01L51/0051 ,  H01L51/0052 ,  H01L51/0054 ,  H01L51/0058 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0067 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0085 ,  H01L51/5016 ,  H01L51/5028 ,  H01L51/5056 ,  H01L51/5072 ,  H01L2251/5376 ,  H01L2251/5384 ,  H01L2251/558

Abstract: An object of one embodiment of the present invention is to provide a multicolor light-emitting element that utilizes fluorescence and phosphorescence and is advantageous for practical application. The light-emitting element has a stacked-layer structure of a first light-emitting layer containing a host material and a fluorescent substance, a separation layer containing a substance having a hole-transport property and a substance having an electron-transport property, and a second light-emitting layer containing two kinds of organic compounds that form an exciplex and a substance that can convert triplet excitation energy into luminescence. Note that a light-emitting element in which light emitted from the first light-emitting layer has an emission spectrum peak on the shorter wavelength side than an emission spectrum peak of the second light-emitting layer is more effective.

Abstract translation: 本发明的一个实施方案的目的是提供一种利用荧光和磷光的多色发光元件，对于实际应用是有利的。 发光元件具有包含主体材料和荧光物质的第一发光层的层叠结构，含有具有空穴传输性的物质的分离层和具有电子传输性的物质，以及 含有形成激元复合物的两种有机化合物的第二发光层和能够将三重态激发能转换成发光的物质。 注意，其中从第一发光层发射的光在比第二发光层的发射光谱峰值更短的波长侧具有发射光谱峰的发光元件更有效。