公开(公告)号：US12111701B2

公开(公告)日：2024-10-08

申请号：US18522350

申请日：2023-11-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiharu Hirakata ,  Hiroyuki Miyake ,  Seiko Inoue ,  Shunpei Yamazaki

IPC: G06F3/041 ,  G06F1/16

CPC classification number: G06F1/1652 ,  G06F3/041 ,  G06F2203/04102

Abstract: A display device with low power consumption is provided. Furthermore, a display device in which an image is displayed in a region that can be used in a folded state is provided. The conceived display device includes a display portion that can be opened and folded, a sensing portion that senses a folded state of the display portion, and an image processing portion that generates, when the display portion is in the folded state, an image in which a black image is displayed in part of the display portion.

公开(公告)号：US12099587B2

公开(公告)日：2024-09-24

申请号：US17627422

申请日：2020-07-13

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki ,  Koji Kusunoki ,  Daisuke Kubota

IPC: G06F21/32 ,  G06V40/12 ,  G06V40/13

CPC classification number: G06F21/32 ,  G06V40/13 ,  G06V40/1365

Abstract: A composite device with a high security level is provided. A composite device capable of inhibiting unauthorized use favorably is provided. The composite device includes a control portion, a detection portion, an authentication portion, and a memory portion. The detection portion has a function of detecting a touch and a function of obtaining first fingerprint data of a finger touching the detection portion. The authentication portion has a function of executing user authentication processing. The memory portion has a function of retaining second fingerprint data registered in advance. The control portion has a function of bringing a system into an unlocked state when the authentication portion authenticates a user and a function of comparing the first fingerprint data obtained by the detection portion and the second fingerprint data when the detection portion detects a touch, and bringing the system into a locked state in the case where those data do not match.

公开(公告)号：US20240306423A1

公开(公告)日：2024-09-12

申请号：US18271350

申请日：2022-01-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Shingo Eguchi ,  Hideki UOCHI

IPC: H10K50/858 ,  H10K50/115 ,  H10K50/826

CPC classification number: H10K50/858 ,  H10K50/115 ,  H10K50/826

Abstract: Provided is a novel light-emitting element. The light-emitting element includes an anode, an EL layer over the anode, and a cathode over the EL layer; a first layer is adjacent to a side surface of the EL layer, and a first portion is adjacent to the side surface of the first layer. The EL layer and the first portion are adjacent to each other with the first layer therebetween. A refractive index of the first portion is lower than a refractive index of the first layer. An angle θ between a bottom surface and the side surface of the EL layer is larger than 90°.

公开(公告)号：US12074223B2

公开(公告)日：2024-08-27

申请号：US17182270

申请日：2021-02-23

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei Yamazaki

IPC: H01L29/78 ,  H01L29/10 ,  H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/1054 ,  H01L29/78696

Abstract: A transistor including an oxide semiconductor layer can have stable electrical characteristics. In addition, a highly reliable semiconductor device including the transistor is provided. A semiconductor device includes a multi-layer film including an oxide layer and an oxide semiconductor layer, a gate insulating film in contact with the multi-layer film, and a gate electrode overlapping with the multi-layer film with the gate insulating film provided therebetween. In the semiconductor device, the oxide semiconductor layer contains indium, the oxide semiconductor layer is in contact with the oxide layer, and the oxide layer contains indium and has a larger energy gap than the oxide semiconductor layer.

公开(公告)号：US12067934B2

公开(公告)日：2024-08-20

申请号：US17411401

申请日：2021-08-25

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Jun Koyama ,  Hiroyuki Miyake

IPC: G09G3/3208 ,  G09G3/20 ,  G09G3/3233 ,  H01L27/12 ,  H01L29/786 ,  H10K59/121 ,  H10K59/131

CPC classification number: G09G3/3208 ,  G09G3/2003 ,  G09G3/3233 ,  H01L27/1225 ,  H01L29/78609 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696 ,  H10K59/1213 ,  H10K59/131 ,  G09G2330/021

Abstract: Objects are to provide a display device the power consumption of which is reduced, to provide a self-luminous display device the power consumption of which is reduced and which is capable of long-term use in a dark place. A circuit is formed using a thin film transistor in which a highly-purified oxide semiconductor is used and a pixel can keep a certain state (a state in which a video signal has been written). As a result, even in the case of displaying a still image, stable operation is easily performed. In addition, an operation interval of a driver circuit can be extended, which results in a reduction in power consumption of a display device. Moreover, a light-storing material is used in a pixel portion of a self-luminous display device to store light, whereby the display device can be used in a dark place for a long time.

公开(公告)号：US12066730B2

公开(公告)日：2024-08-20

申请号：US18231383

申请日：2023-08-08

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Yukie Suzuki ,  Hideaki Kuwabara ,  Hajime Kimura

IPC: G02F1/1368 ,  G02F1/1333 ,  G02F1/1339 ,  G02F1/1343 ,  G02F1/1362 ,  H01L27/12 ,  H01L29/04 ,  H01L29/66 ,  H01L29/786 ,  H01L29/45 ,  H01L29/49

CPC classification number: G02F1/1368 ,  G02F1/133345 ,  G02F1/1339 ,  G02F1/134309 ,  G02F1/136286 ,  H01L27/1214 ,  H01L27/1222 ,  H01L27/1288 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696 ,  H01L29/458 ,  H01L29/4908

Abstract: A method of manufacturing, with high mass productivity, liquid crystal display devices having highly reliable thin film transistors with excellent electric characteristics is provided. In a liquid crystal display device having an inverted staggered thin film transistor, the inverted staggered thin film transistor is formed as follows: a gate insulating film is formed over a gate electrode; a microcrystalline semiconductor film which functions as a channel formation region is formed over the gate insulating film; a buffer layer is formed over the microcrystalline semiconductor film; a pair of source and drain regions are formed over the buffer layer; and a pair of source and drain electrodes are formed in contact with the source and drain regions so as to expose a part of the source and drain regions.

公开(公告)号：US12058878B2

公开(公告)日：2024-08-06

申请号：US17414058

申请日：2019-12-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Daisuke Kubota ,  Nobuharu Ohsawa ,  Takeyoshi Watabe ,  Taisuke Kamada

IPC: H10K50/13 ,  H10K50/16 ,  H10K50/852 ,  H10K65/00 ,  H10K102/00

CPC classification number: H10K50/131 ,  H10K50/852 ,  H10K65/00 ,  H10K50/16 ,  H10K2102/311

Abstract: A display apparatus having a function of emitting visible light and infrared light and a light detection function is provided. The display apparatus includes a first light-emitting device, a second light-emitting device, and a light-receiving device in a display portion. The first light-emitting device emits both visible light and infrared light and the second light-emitting device emits visible light. The light-receiving device has a function of absorbing at least part of visible light and infrared light. The first light-emitting device includes a first pixel electrode, a first light-emitting layer, a second light-emitting layer, and a common electrode. The second light-emitting device includes a second pixel electrode, a third light-emitting layer, and the common electrode. The light-receiving device includes a third pixel electrode, an active layer, and the common electrode. The first light-emitting layer includes a light-emitting material emitting infrared light. The second light-emitting layer and the third light-emitting layer include light-emitting materials emitting visible light with different wavelengths. The active layer includes an organic compound.

公开(公告)号：US12057510B2

公开(公告)日：2024-08-06

申请号：US18212773

申请日：2023-06-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Motoki Nakashima ,  Tatsuya Honda

IPC: H01L29/786 ,  C01G19/00 ,  H01L29/04 ,  H01L29/26

CPC classification number: H01L29/7869 ,  C01G19/006 ,  H01L29/04 ,  H01L29/045 ,  H01L29/26 ,  H01L29/78696 ,  C01P2002/72

Abstract: An object is to provide a material suitably used for a semiconductor included in a transistor, a diode, or the like. Another object is to provide a semiconductor device including a transistor in which the condition of an electron state at an interface between an oxide semiconductor film and a gate insulating film in contact with the oxide semiconductor film is favorable. Further, another object is to manufacture a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. A semiconductor device is formed using an oxide material which includes crystal with c-axis alignment, which has a triangular or hexagonal atomic arrangement when seen from the direction of a surface or an interface and rotates around the c-axis.

公开(公告)号：US12051924B2

公开(公告)日：2024-07-30

申请号：US17291005

申请日：2019-11-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Tatsuya Onuki ,  Takayuki Ikeda ,  Shunpei Yamazaki

IPC: H02J7/00 ,  H01M10/44 ,  H01M10/48 ,  H02J50/10 ,  H01L23/522 ,  H01L29/78 ,  H01L29/786

CPC classification number: H02J7/00302 ,  H01M10/44 ,  H01M10/48 ,  H02J7/0042 ,  H02J50/10 ,  H01L23/5223 ,  H01L29/7851 ,  H01L29/7869

Abstract: A structure that includes a circuit for controlling the safe operation of a secondary battery but can overcome space limitations owing to miniaturization of the housing is provided. A charge control circuit is provided over a flexible substrate and bonded to an external surface of the secondary battery. The charge control circuit is electrically connected to at least one of two terminals of the secondary battery and controls charging. To prevent overcharge, both an output transistor of a charging circuit and a blocking switch are brought into off state substantially concurrently. Blocking two paths which connect to the battery can quickly stop charging when overcharge is detected and reduce damage to the battery owing to the overcharge.

公开(公告)号：US12046679B2

公开(公告)日：2024-07-23

申请号：US18364749

申请日：2023-08-03

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei Yamazaki ,  Junichi Koezuka ,  Kenichi Okazaki ,  Yukinori Shima ,  Shinpei Matsuda ,  Haruyuki Baba ,  Ryunosuke Honda

IPC: H01L29/786 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/12 ,  H01L29/66 ,  H01L29/778 ,  H01L29/24

CPC classification number: H01L29/7869 ,  H01L21/02565 ,  H01L21/823412 ,  H01L27/1225 ,  H01L27/127 ,  H01L29/66969 ,  H01L29/7781 ,  H01L29/7782 ,  H01L29/7786 ,  H01L29/78648 ,  H01L29/78696 ,  H01L29/24

Abstract: To improve field-effect mobility and reliability in a transistor including an oxide semiconductor film. A semiconductor device includes a transistor including an oxide semiconductor film. The transistor includes a region where the maximum value of field-effect mobility of the transistor at a gate voltage of higher than 0 V and lower than or equal to 10 V is larger than or equal to 40 and smaller than 150; a region where the threshold voltage is higher than or equal to minus 1 V and lower than or equal to 1 V; and a region where the S value is smaller than 0.3 V/decade.