中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

59 records (took 0.022 seconds)

    STRUCTURES AND METHODS FOR HIGH EFFICIENCY COMPOUND SEMICONDUCTOR SOLAR CELLS
    32.
    发明申请
    STRUCTURES AND METHODS FOR HIGH EFFICIENCY COMPOUND SEMICONDUCTOR SOLAR CELLS 审中-公开
    高效化合物半导体太阳能电池的结构和方法

    公开(公告)号：US20130337601A1

    公开(公告)日：2013-12-19

    申请号：US13781708

    申请日：2013-02-28

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Mehrdad M. Moslehi

    IPC: H01L31/18

    CPC classification number: H01L31/184 ,  H01L31/06875 ,  H01L31/1852 ,  Y02E10/544 ,  Y02P70/521

    Abstract: Methods and structures are provided for the growth and separation of a relatively thin layer crystalline compound semiconductor material containing III-V device layers, including but not limited to Gallium Arsenide (GaAs), on top of a crystalline silicon template wafer. Solar cell structures and manufacturing methods based on the crystalline compound semiconductor material are described.

    Abstract translation: 提供的方法和结构用于在晶体硅模板晶片的顶部上生长和分离含有III-V器件层（包括但不限于砷化镓（GaAs））的相对薄的晶体化合物半导体材料。 描述了基于结晶化合物半导体材料的太阳能电池结构和制造方法。

    Fabrication methods for monolithically isled back contact back junction solar cells
    36.
    发明授权
    Fabrication methods for monolithically isled back contact back junction solar cells 有权
    单片反接触背结太阳能电池的制造方法

    公开(公告)号：US09379258B2

    公开(公告)日：2016-06-28

    申请号：US14493341

    申请日：2014-09-22

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Anand Deshpande ,  Virendra V. Rana ,  Mehrdad M. Moslehi ,  Sean M. Seutter

    IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0216 ,  H01L27/142 ,  H01L31/05 ,  H01L31/068

    CPC classification number: H01L31/022441 ,  H01L27/1421 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50 ,  Y02E10/547

    Abstract: Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are deposited on the back surface of a solar cell substrate. The solar cell substrate is annealed forming emitter contact regions corresponding to the emitter dopant source, field emitter regions corresponding to the field emitter dopant, and base contact regions corresponding to the base dopant source. The base dopant source, field emitter dopant source, and the emitter dopant source are etched. A backside passivation layer is deposited on the back surface of the solar cell. Contacts are opened to the emitter contact regions and the base contact regions through the backside passivation layer. Patterned base metallization and patterned emitter metallization is formed on the back surface of the solar cell with electrical interconnections to the base contact regions and the emitter contact regions.

    Abstract translation: 制造接触背面太阳能电池的制造方法。 在太阳能电池基板的背面上沉积基底掺杂剂源，场致发射掺杂源和发射极掺杂源。 对太阳能电池基板进行退火，形成对应于发射极掺杂源的发射极接触区域，对应于场发射极掺杂剂的场发射极区域和对应于基极掺杂剂源极的基极接触区域。 蚀刻基底掺杂剂源，场致发射体掺杂源和发射极掺杂源。 背面钝化层沉积在太阳能电池的背面上。 触点通过背面钝化层向发射极接触区域和基极接触区域开放。 图案化的基底金属化和图案化发射极金属化形成在具有与基极接触区域和发射极接触区域的电互连的太阳能电池的背面上。

    REAR WIDE BAND GAP PASSIVATED PERC SOLAR CELLS
    37.
    发明申请
    REAR WIDE BAND GAP PASSIVATED PERC SOLAR CELLS 审中-公开
    后宽带带盲孔PERC太阳能电池

    公开(公告)号：US20160049540A1

    公开(公告)日：2016-02-18

    申请号：US14826171

    申请日：2015-08-13

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Heather Deshazer ,  Mohammed Islam

    IPC: H01L31/068 ,  H01L31/036 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/0216

    CPC classification number: H01L31/068 ,  H01L31/02167 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A photovoltaic solar cell comprises a light absorbing layer of n-type crystalline silicon. An emitter layer is on the front side of the n-type crystalline silicon. A front passivation layer physically contacts the emitter layer. A front metal contact is on the front passivation layer and contacts the emitter layer. A back layer of wide bandgap semiconductor physically contacts a back side of the n-type crystalline silicon layer. A back metal contact physically contacts the wide bandgap semiconductor layer.

    Abstract translation: 光伏太阳能电池包括n型晶体硅的光吸收层。 发射极层位于n型结晶硅的正面。 前钝化层物理地接触发射极层。 前金属触点位于前钝化层上并与发射极层接触。 宽带隙半导体的背层物理地接触n型晶体硅层的背面。 后金属触点物理接触宽带隙半导体层。

    PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS
    38.
    发明申请
    PASSIVATED CONTACTS FOR BACK CONTACT BACK JUNCTION SOLAR CELLS 审中-公开
    被接触的接触器返回接头太阳能电池

    公开(公告)号：US20150206998A1

    公开(公告)日：2015-07-23

    申请号：US14558707

    申请日：2014-12-02

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Heather Deshazer ,  Mohammed Islam ,  Mehrdad M. Moslehi

    IPC: H01L31/0224 ,  H01L31/0216

    CPC classification number: H01L31/022458 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/0682 ,  H01L31/18 ,  Y02E10/547

    Abstract: Passivated contact structures and fabrication methods for back contact back junction solar cells are provided. According to one example embodiment, a back contact back junction photovoltaic solar cell is described that has a semiconductor light absorbing layer having a front side and a backside having base regions and emitter regions. A passivating dielectric insulating layer is on the base and emitter regions. A first electrically conductive contact contacts the passivating dielectric insulating layer together having a work function suitable for selective collection of electrons that closely matches a conduction band of the light absorbing layer. A second electrically conductive contact contacts the passivating dielectric insulating layer together having a work function suitable for selective collection of electrons that closely matches a valence band of the light absorbing layer.

    Abstract translation: 提供了背接触太阳能电池的钝化接触结构和制造方法。 根据一个示例性实施例，描述了具有正面和背面具有基极区域和发射极区域的半导体光吸收层的背面接合光伏太阳能电池。 钝化介质绝缘层位于基极和发射极区域上。 第一导电触点与钝化介电绝缘层接触，具有适于选择性收集与光吸收层的导带紧密匹配的电子的功函数。 第二导电触点一起接触钝化介电绝缘层，具有适于选择性地收集与光吸收层的价带紧密匹配的电子的功函数。

    STRUCTURES AND METHODS FOR IMPROVING SOLAR CELL EFFICIENCY AND MECHANICAL STRENGTH
    40.
    发明申请
    STRUCTURES AND METHODS FOR IMPROVING SOLAR CELL EFFICIENCY AND MECHANICAL STRENGTH 审中-公开
    改善太阳能电池效率和机械强度的结构和方法

    公开(公告)号：US20150162465A1

    公开(公告)日：2015-06-11

    申请号：US14479523

    申请日：2014-09-08

    Applicant: SOLEXEL, INC.

    Inventor： Pawan Kapur ,  Suketo Parikh ,  Mehrdad M. Moslehi

    IPC: H01L31/0236 ,  H01L31/0232 ,  H01J37/32 ,  H01L31/054

    CPC classification number: H01L31/02366 ,  H01J37/32651 ,  H01J2237/3346 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/035281 ,  H01L31/03921 ,  H01L31/046 ,  H01L31/054 ,  H01L31/1804 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521 ,  Y10T428/24149

    Abstract: The present disclosure presents a three-dimensional thin film solar cell (3-D TFSC) substrate having enhanced mechanical strength, light trapping, and metal modulation coverage properties. The substrate includes a plurality of unit cells, which may or may not be different. Unit cells are defined as a small self-contained geometrical pattern which may be repeated. Each unit cell structure includes a wall enclosing a trench. Further, the unit cell includes an aperture having an aperture diameter. For the purposes of the present disclosure, the dimensions of interest include wall thickness, wall height, and aperture diameter. A pre-determined variation in these dimensions among unit cells across the substrate produces specific advantages.

    Abstract translation: 本公开内容提供了具有增强的机械强度，光捕获和金属调制覆盖性能的三维薄膜太阳能电池（3-D TFSC）基板。 衬底包括多个单元电池，其可以是或可以不是不同的。 单元单元被定义为可以重复的小的独立几何图案。 每个单电池结构都包括一个包围沟槽的墙壁。 此外，单元电池包括具有孔径的孔。 为了本公开的目的，感兴趣的尺寸包括壁厚度，壁高度和孔直径。 在衬底之间的单元电池中这些尺寸的预定变化产生了特定的优点。

Patent Agency Ranking