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    PATTERNING OF SILICON OXIDE LAYERS USING PULSED LASER ABLATION
    35.
    发明申请
    PATTERNING OF SILICON OXIDE LAYERS USING PULSED LASER ABLATION 审中-公开
    使用激光雷射消除氧化硅层的图案

    公开(公告)号：US20170005206A1

    公开(公告)日：2017-01-05

    申请号：US14991789

    申请日：2016-01-08

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Virendra V. Rana ,  Pranav Anbalagan ,  Vivek Saraswat

    IPC: H01L31/0216 ,  H01L21/02 ,  H01L31/18 ,  H01L31/0224 ,  H01L31/028 ,  H01L31/068 ,  H01L21/311 ,  H01L31/0236

    CPC classification number: H01L31/02167 ,  H01L21/02129 ,  H01L21/02164 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/31105 ,  H01L21/31144 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/028 ,  H01L31/0682 ,  H01L31/1896 ,  Y02E10/50 ,  Y02E10/547

    Abstract: Various laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, metal ablation, annealing to improve passivation, and selective emitter doping via laser heating of aluminum. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. Laser ablation techniques are disclosed that leave the underlying silicon substantially undamaged. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, or other cleavage techniques such as ion implantation and heating, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的各种激光处理方案。 这些方法包括基极和发射极接触开口，选择性掺杂，金属烧蚀，退火以改善钝化，以及通过激光加热铝的选择性发射极掺杂。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 公开了激光烧蚀技术，使基底硅基本上没有损坏。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或经由外延沉积工艺或诸如离子注入和加热的其它切割技术制造的晶体硅衬底，其是 平面或纹理/三维。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

    Fabrication methods for monolithically isled back contact back junction solar cells
    36.
    发明授权
    Fabrication methods for monolithically isled back contact back junction solar cells 有权
    单片反接触背结太阳能电池的制造方法

    公开(公告)号：US09379258B2

    公开(公告)日：2016-06-28

    申请号：US14493341

    申请日：2014-09-22

    Applicant: Solexel, Inc.

    Inventor： Pawan Kapur ,  Anand Deshpande ,  Virendra V. Rana ,  Mehrdad M. Moslehi ,  Sean M. Seutter

    IPC: H01L21/00 ,  H01L31/0224 ,  H01L31/0216 ,  H01L27/142 ,  H01L31/05 ,  H01L31/068

    CPC classification number: H01L31/022441 ,  H01L27/1421 ,  H01L31/02167 ,  H01L31/02168 ,  H01L31/02245 ,  H01L31/0516 ,  H01L31/0682 ,  Y02E10/50 ,  Y02E10/547

    Abstract: Fabrication methods for making back contact back junction solar cells. A base dopant source, a field emitter dopant source, and an emitter dopant source are deposited on the back surface of a solar cell substrate. The solar cell substrate is annealed forming emitter contact regions corresponding to the emitter dopant source, field emitter regions corresponding to the field emitter dopant, and base contact regions corresponding to the base dopant source. The base dopant source, field emitter dopant source, and the emitter dopant source are etched. A backside passivation layer is deposited on the back surface of the solar cell. Contacts are opened to the emitter contact regions and the base contact regions through the backside passivation layer. Patterned base metallization and patterned emitter metallization is formed on the back surface of the solar cell with electrical interconnections to the base contact regions and the emitter contact regions.

    Abstract translation: 制造接触背面太阳能电池的制造方法。 在太阳能电池基板的背面上沉积基底掺杂剂源，场致发射掺杂源和发射极掺杂源。 对太阳能电池基板进行退火，形成对应于发射极掺杂源的发射极接触区域，对应于场发射极掺杂剂的场发射极区域和对应于基极掺杂剂源极的基极接触区域。 蚀刻基底掺杂剂源，场致发射体掺杂源和发射极掺杂源。 背面钝化层沉积在太阳能电池的背面上。 触点通过背面钝化层向发射极接触区域和基极接触区域开放。 图案化的基底金属化和图案化发射极金属化形成在具有与基极接触区域和发射极接触区域的电互连的太阳能电池的背面上。

    METAL FOIL METALLIZATION FOR BACKPLANE-ATTACHED SOLAR CELLS AND MODULES
    38.
    发明申请
    METAL FOIL METALLIZATION FOR BACKPLANE-ATTACHED SOLAR CELLS AND MODULES 有权
    用于背板连接的太阳能电池和模块的金属箔金属化

    公开(公告)号：US20150129031A1

    公开(公告)日：2015-05-14

    申请号：US14539978

    申请日：2014-11-12

    Applicant: Solexel, Inc.

    Inventor： Mehrdad M. Moslehi ,  Thom Stalcup ,  Karl-Josef Kramer ,  Anthony Calcaterra ,  Virendra V. Rana ,  Sean M. Seutter ,  Pawan Kapur ,  Michael Wingert

    IPC: H01L31/0224 ,  H01L31/18 ,  H01L31/028 ,  H01L31/0216

    CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/0682 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A back contact solar cell is described which includes a semiconductor light absorbing layer; a first-level metal layer (M1), the M1 metal layer on a back side of the light absorbing layer, the back side being opposite from a front side of the light absorbing layer designed to receive incident light; an electrically insulating backplane sheet backside of said solar cell with the M1 layer, the backplane sheet comprising a plurality of via holes that expose portions of the M1 layer beneath the backplane sheet; and an M2 layer in contact with the backplane sheet, the M2 layer made of a sheet of pre-fabricated metal foil material comprising a thickness of between 5-250 μm, the M2 layer electrically connected to the M1 layer through the via holes in the backplane sheet.

    Abstract translation: 描述了一种背接触太阳能电池，其包括半导体光吸收层; 第一级金属层（M1），位于光吸收层背面的M1金属层，后侧与设计成接收入射光的光吸收层的前侧相反; 具有M1层的所述太阳能电池的背面电绝缘底板，所述背板片包括多个通孔，所述多个通孔使得所述M1层的背面板下方的部分露出; 以及与背板接触的M2层，M2层由包括5-250μm的厚度的预制金属箔材料制成，M2层通过导电孔中的通孔与M1层电连接 底板。

    LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION
    40.
    发明申请
    LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION 有权
    高效晶体硅太阳能电池制造的激光加工

    公开(公告)号：US20130217172A1

    公开(公告)日：2013-08-22

    申请号：US13846230

    申请日：2013-03-18

    Applicant: Solexel, Inc.

    Inventor： Virendra V. Rana ,  JianJun Liang ,  Pranav Anbalagan ,  Mehrdad M. Moslehi

    IPC: H01L31/18

    CPC classification number: H01L31/1804 ,  H01L31/022441 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/0516 ,  H01L31/056 ,  H01L31/0682 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/1884 ,  H01L31/1896 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光处理方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适用于薄晶体半导体，包括薄晶体硅薄膜。

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