公开(公告)号：US20220200565A1

公开(公告)日：2022-06-23

申请号：US17475716

申请日：2021-09-15

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Seung Wook PARK ,  Seong Hun NA ,  Jae Hyun JUNG ,  Yeong Gyu LEE ,  Moon Chul LEE ,  Jin Suk SON ,  Jae Goon AUM

IPC: H03H9/10 ,  H03H9/05 ,  H03H9/17

Abstract: A bulk-acoustic wave resonator package includes a package substrate; a cover bonded to the package substrate; an acoustic wave resonator accommodated in an accommodation space defined by the package substrate and the cover; a conductive wire disposed in the accommodation space to electrically connect the acoustic wave resonator to the package substrate; and a bonding portion to fixedly couple the acoustic wave resonator to the package substrate. The bonding portion includes an adhesive member including silicon.

公开(公告)号：US20220149806A1

公开(公告)日：2022-05-12

申请号：US17226317

申请日：2021-04-09

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Sang Heon HAN ,  Sung Joon PARK ,  Sang Kee YOON ,  Sang Hyun YI ,  Jae Goon AUM

IPC: H03H9/02 ,  H03H9/17

Abstract: A bulk acoustic wave resonator includes: a substrate; a resonant portion including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on the substrate; and a protective layer disposed on an upper surface of the resonant portion. The protective layer includes: a first protective layer formed of a diamond thin film; and a second protective layer stacked on the first protective layer, and formed of a dielectric material.

公开(公告)号：US20210359662A1

公开(公告)日：2021-11-18

申请号：US16953431

申请日：2020-11-20

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Yong Suk KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Tae Hun LEE ,  Jin Woo YI

IPC: H03H9/17 ,  H03H9/13 ,  H03H9/02 ,  H03H3/02 ,  H01L41/35

Abstract: A bulk-acoustic wave resonator includes a resonator, including a first electrode, a piezoelectric layer, and a second electrode sequentially stacked on a substrate; and an insertion layer disposed below the piezoelectric layer, and configured to partially elevate the piezoelectric layer and the second electrode, wherein the insertion layer may be formed of a material containing silicon (Si), oxygen (O), and nitrogen (N).

公开(公告)号：US20200373900A1

公开(公告)日：2020-11-26

申请号：US16992434

申请日：2020-08-13

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Tae Kyung LEE ,  Tae Yoon KIM ,  Sang Kee YOON ,  Chang Hyun LIM ,  Jong Woon KIM ,  Moon Chul LEE

IPC: H03H9/02 ,  H03H9/54 ,  H03H9/17 ,  H03H9/13 ,  H01L41/053 ,  H01L41/29 ,  H01L41/31 ,  H03H3/02

Abstract: An acoustic wave resonator includes a resonating part disposed on and spaced apart from a substrate by a cavity, the resonating part including a membrane layer, a first electrode, a piezoelectric layer, and a second electrode that are sequentially stacked. 0 Å≤ΔMg≤170 Å may be satisfied, ΔMg being a difference between a maximum thickness and a minimum thickness of the membrane layer disposed in the cavity.

公开(公告)号：US20200252046A1

公开(公告)日：2020-08-06

申请号：US16418107

申请日：2019-05-21

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Ran Hee SHIN ,  Tae Kyung LEE ,  Sung Jun LEE ,  Hwa Sun LEE ,  Je Hong KYOUNG ,  Sung Sun KIM ,  Jin Suk SON

IPC: H03H9/17 ,  H03H9/54 ,  H03H9/02

Abstract: A bulk acoustic wave resonator includes a substrate, a seed layer disposed on the substrate, a first electrode disposed on the seed layer and including an aluminum alloy layer containing scandium (Sc), a piezoelectric layer disposed on the first electrode and including a layer having a cation (Al) polarity, and a second electrode disposed on the piezoelectric layer.

公开(公告)号：US20200036359A1

公开(公告)日：2020-01-30

申请号：US16356333

申请日：2019-03-18

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Ran Hee SHIN ,  Tae Kyung LEE ,  Je Hong KYOUNG ,  Jin Suk SON ,  Hwa Sun LEE ,  Sung Sun KIM

IPC: H03H9/13 ,  H01L41/047 ,  H01L41/187 ,  H03H9/02 ,  H01L41/316 ,  H03H3/02 ,  H03H9/17 ,  C22C21/00

Abstract: A bulk-acoustic wave resonator includes a substrate, a first electrode disposed on the substrate, a piezoelectric layer, of which at least a portion is disposed on the first electrode, a second electrode disposed on the piezoelectric layer, and a passivation layer disposed to cover the first electrode and the second electrode. Either one or both of the first electrode and the second electrode includes an aluminum alloy layer. Either one or both of the piezoelectric layer and the passivation layer has aluminum nitride, or aluminum nitride added with a doping material, having a ratio of an out-of-plane lattice constant “c” to an in-plane lattice constant “a” (c/a) of less than 1.58.

公开(公告)号：US20190149127A1

公开(公告)日：2019-05-16

申请号：US16224025

申请日：2018-12-18

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  In Young KANG ,  Ran Hee SHIN ,  Jin Suk SON

IPC: H03H9/17 ,  H03H3/02 ,  H03H9/54 ,  H03H9/02

CPC classification number: H03H9/171 ,  H03H3/02 ,  H03H9/02015 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic resonator includes a substrate, a first electrode disposed above the substrate, a piezoelectric body disposed on the first electrode and including a plurality of piezoelectric layers each including aluminum nitride with a doping material, and a second electrode disposed on the piezoelectric body, where at least one of the piezoelectric layers is a compressive piezoelectric layer formed under compressive stress.

公开(公告)号：US20180351533A1

公开(公告)日：2018-12-06

申请号：US15875207

申请日：2018-01-19

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Jun LIM ,  Jong Woon KIM ,  Ran Hee SHIN ,  Sung Sun KIM

IPC: H03H9/17 ,  H03H9/13 ,  H03H3/02

Abstract: An acoustic resonator includes a membrane layer disposed on an insulating layer; a cavity formed by the insulating layer and the membrane layer; a resonating portion disposed on the cavity and having a first electrode, a piezoelectric layer, and a second electrode stacked thereon; a protective layer disposed on the resonating portion; and a hydrophobic layer formed on the protective layer.

公开(公告)号：US20180048287A1

公开(公告)日：2018-02-15

申请号：US15486806

申请日：2017-04-13

Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.

Inventor： Tae Kyung LEE ,  Hwa Sun LEE ,  Hyun Min HWANG ,  Moon Chul LEE ,  Sung Sun KIM ,  Tae Yoon KIM

IPC: H03H9/17 ,  H01L41/18 ,  H01L41/047

CPC classification number: H03H9/177 ,  H01L41/0477 ,  H01L41/18 ,  H03H9/02118 ,  H03H9/171 ,  H03H9/173

Abstract: A bulk acoustic resonator may include a substrate; a resonating portion including a first electrode layer, a piezoelectric layer, and a second electrode layer which are sequentially stacked on the substrate, and partitioned into an active region and a non-active region; and a frame electrode layer including frame electrodes disposed within the active region to be spaced apart from each other along an outer circumference portion of the active region.

公开(公告)号：US20180019726A1

公开(公告)日：2018-01-18

申请号：US15638809

申请日：2017-06-30

Applicant: Samsung Electro-Mechanics Co., Ltd.

Inventor： Sung HAN ,  Jae Chang LEE ,  Won HAN ,  Tae Yoon KIM ,  Jong Woon KIM ,  Tae Kyung LEE ,  Moon Chul LEE ,  Tae Hun LEE ,  Sung Min CHO ,  In Young KANG

IPC: H03H9/10 ,  H03H9/02 ,  H03H9/17 ,  H03H9/54

CPC classification number: H03H9/1014 ,  H03H9/02086 ,  H03H9/02102 ,  H03H9/02118 ,  H03H9/02157 ,  H03H9/172 ,  H03H9/173 ,  H03H9/54

Abstract: A bulk acoustic wave resonator device includes: a substrate; a lower electrode disposed on the substrate; a piezoelectric layer disposed over a portion of the lower electrode; an upper electrode disposed on the piezoelectric layer; and a shape control layer covering an edge of a cavity disposed between the substrate and the lower electrode, wherein tensile stress is applied to the shape control layer during formation of the shape control layer.