CHIP WET-TRANSFERRING DEVICE
    35.
    发明公开

    公开(公告)号:US20240178342A1

    公开(公告)日:2024-05-30

    申请号:US18198089

    申请日:2023-05-16

    CPC classification number: H01L33/005

    Abstract: A chip wet-transferring device includes a chamber, a support member provided in the chamber and configured to support a transfer substrate, the transfer substrate including a plurality of grooves and on which a plurality of micro-semiconductor chips are disposed, and a magnetic field generator configured to remove a first micro-semiconductor chip from among the plurality of micro-semiconductor chips that is disposed on the transfer substrate and at least partially outside of the plurality of grooves on the transfer substrate by generating a magnetic field that moves the first micro-semiconductor chip in a direction substantially parallel with an upper surface of the transfer substrate.

    DISPLAY APPARATUS
    36.
    发明公开
    DISPLAY APPARATUS 审中-公开

    公开(公告)号:US20240021661A1

    公开(公告)日:2024-01-18

    申请号:US18218664

    申请日:2023-07-06

    CPC classification number: H01L27/156 H01L33/382 H01L33/502

    Abstract: A display apparatus, including a circuit substrate including driver circuits and first bonding electrodes, and a pixel array on the circuit substrate and including a plurality of pixels each including first to third sub-pixels, and second bonding electrodes bonded to the first bonding electrodes, the pixel array further including, a plurality of first LED cells corresponding to the first and third sub-pixels, respectively, and each including a first conductivity-type semiconductor layer, a first active layer, and a second conductivity-type semiconductor layer, a plurality of second LED cells corresponding to the second sub-pixels, respectively, and each including the first conductivity-type semiconductor layer, a second active layer, and the second conductivity-type semiconductor layer, a first electrode extending to cover upper surfaces of the plurality of first and second LED cells and connected to the first conductivity-type semiconductor layers in common.

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