-
公开(公告)号：US20240363679A1
公开(公告)日：2024-10-31
申请号：US18765887
申请日：2024-07-08
发明人： Boeun PARK , Yongsung KIM , Jeonggyu SONG , Jooho LEE
摘要： An anti-ferroelectric thin-film structure including a dielectric layer including an anti-ferroelectric phase of hafnium oxide; and an inserted layer in the dielectric layer, the inserted layer including an oxide. An electronic device to which the anti-ferroelectric thin-film structure has been applied may secure an operating voltage section with little hysteresis.
-
2.发明公开公开(公告)号：US20230420490A1
公开(公告)日：2023-12-28
申请号：US18465439
申请日：2023-09-12
发明人： Jeonggyu SONG , Kyooho JUNG , Younsoo KIM , Haeryong KIM , Jooho LEE
IPC分类号： H10B12/00 , H01L21/285
CPC分类号： H01L28/60 , H01L21/28556 , H10B12/30
摘要： A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
-
公开(公告)号：US20230178584A1
公开(公告)日：2023-06-08
申请号：US17841035
申请日：2022-06-15
发明人： Hyungjun KIM , Yong-Hee CHO , Yongsung KIM , Boeun PARK , Jeongil BANG , Jooho LEE
IPC分类号： H01L49/02 , H01L27/108 , H01L31/0216 , C23C16/455 , C23C14/08 , C23C16/06 , C23C14/34 , C23C28/00
CPC分类号： H01L28/56 , H01L27/10808 , H01L31/02167 , C23C16/45527 , C23C14/088 , C23C16/06 , C23C14/3414 , C23C28/32 , C23C28/3455
摘要： Disclosed are a high-dielectric and method of manufacturing the same, a target material used for manufacturing the high-dielectric, an electronic device including the high-dielectric, and an electronic apparatus including the electronic device. The high-dielectric includes a first material including oxygen and at least two components, and a second material different from the first materials. The first material is a dielectric having a dielectric constant greater than a dielectric constant of silicon oxide, and the second material is an element for reducing a crystallization temperature of the first material. The content of the second material with respect to the first material may be within a range that does not deteriorate leakage current characteristics of the first material. The content of the second material may be in a range of about 0.1 atomic % to about 10 atomic %, about 0.1 atomic % to about 8.5 atomic %, or about 0.1 atomic % to about 2 atomic %.
-
公开(公告)号：US20230080072A1
公开(公告)日：2023-03-16
申请号：US17715389
申请日：2022-04-07
发明人： Jinhong KIM , Changsoo LEE , Yongsung KIM , Euncheol DO , Jooho LEE , Yong-Hee CHO
IPC分类号： H01L49/02 , H01L27/108
摘要： A capacitor including a lower electrode; an upper electrode apart from the lower electrode; and a between the lower electrode and the upper electrode, the dielectric including a dielectric layer including TiO2, and a leakage current reducing layer including GeO2 in the dielectric layer. Due to the leakage current reducing layer, a leakage current is effectively reduced while a decrease in the dielectric constant of the dielectric thin-film is small.
-
5.发明申请公开(公告)号：US20220278192A1
公开(公告)日：2022-09-01
申请号：US17749240
申请日：2022-05-20
发明人： Jeonggyu SONG , Kyooho JUNG , Younsoo KIM , Haeryong KIM , Jooho LEE
IPC分类号： H01L49/02 , H01L21/285 , H01L27/108
摘要： A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
-
公开(公告)号：US20220254870A1
公开(公告)日：2022-08-11
申请号：US17344475
申请日：2021-06-10
发明人： Hyangsook LEE , Junghwa KIM , Eunha LEE , Jeonggyu SONG , Jooho LEE , Myoungho JEONG
摘要： Provided are dielectric thin-film structures and electronic devices including the same. The dielectric thin-film structure includes a substrate, and a dielectric layer provided on the substrate. The dielectric layer including a tetragonal crystal structure, and crystal grains including a proportion of the crystal grains preferentially oriented such that at least one of a , , or direction of a crystal lattice is parallel to or forms an angle of less than 45 degrees an out-of-plane orientation.
-
公开(公告)号：US20210140049A1
公开(公告)日：2021-05-13
申请号：US16827895
申请日：2020-03-24
发明人： Narae HAN , Jeonggyu SONG , Yongsung KIM , Jooho LEE
IPC分类号： C23C16/56 , H01L27/108 , H01L27/11502 , C23C16/455 , C23C14/58 , C23C14/08 , C23C16/40 , C01G15/00 , C01G27/02 , C01F7/02 , C01G25/02
摘要： A thin film structure including a dielectric material layer, a method of manufacturing the same, and an electronic device employing the same are disclosed. The disclosed thin film structure includes a first conductive layer; a first dielectric material layer on the first conductive layer, the first dielectric material layer having a crystal phase and including a metal oxide; an InxOy-based seed material layer formed on the first dielectric material layer and having a thickness less than a thickness of the first dielectric material layer; and a second conductive layer formed on the seed material layer.
-
8.发明申请公开(公告)号：US20210118982A1
公开(公告)日：2021-04-22
申请号：US16839641
申请日：2020-04-03
发明人： Jeonggyu SONG , Kyooho JUNG , Younsoo KIM , Haeryong KIM , Jooho LEE
IPC分类号： H01L49/02 , H01L27/108 , H01L21/285
摘要： A capacitor includes: a lower electrode including a metal nitride represented by MM′N, wherein M is a metal element, M′ is an element different from M, and N is nitrogen; a dielectric layer on the lower electrode; an interfacial layer between the lower electrode and the dielectric layer and including a metal nitrate represented by MM′ON, wherein M is a metal element, M′ is an element different from M, N is nitrogen, and O is oxygen; and an upper electrode on the dielectric layer.
-
9.发明申请NANOSTRUCTURE, METHOD OF PREPARING THE SAME, AND PANEL UNITS COMPRISING THE NANOSTRUCTURE 审中-公开纳米结构，其制备方法和包含纳米结构的面板单元公开(公告)号：US20160133349A1
公开(公告)日：2016-05-12
申请号：US14808360
申请日：2015-07-24
发明人： Eunhyoung CHO , Inyong SONG , Changseung LEE , Chan KWAK , Jaekwan KIM , Jooho LEE , Jinyoung HWANG
IPC分类号： H01B1/22 , D06M23/00 , C23F1/32 , D06M15/564
CPC分类号： H01B1/22 , B82Y10/00 , B82Y40/00 , C23F1/02 , C23F1/14 , C23F1/30 , C23F1/40 , G06F3/041 , G06F3/0412 , G06F3/044 , G06F2203/04103 , G06F2203/04112 , H01L29/0673 , H01L29/413 , H01L31/022466 , H01L33/42
摘要： Example embodiments relate to a nanostructure including a conductive region and a nonconductive region, wherein the conductive region includes at least one first nanowire, and the nonconductive region includes at least one second nanowire that is at least partially sectioned, a method of preparing the nanostructure, and a panel unit including the nanostructure.
摘要翻译： 示例实施方案涉及包括导电区域和非导电区域的纳米结构，其中所述导电区域包括至少一个第一纳米线，并且所述非导电区域包括至少部分切割的至少一个第二纳米线，制备纳米结构的方法， 以及包括纳米结构的面板单元。
-
10.发明公开公开(公告)号：US20240290821A1
公开(公告)日：2024-08-29
申请号：US18444162
申请日：2024-02-16
发明人： Hyungjun KIM , Sang Woon LEE , Se Eun KIM , Hye Min LEE , Jae Deock JEON , Cheheung KIM , Boeun PARK , Jooho LEE , Changsoo LEE
IPC分类号： C23C16/455
CPC分类号： H01L28/55 , C23C16/45527 , H01L28/91
摘要： A method of manufacturing, by atomic layer deposition, an electrode including a perovskite type crystal structure represented by Formula 1, includes: forming a vanadium-containing precursor on a substrate; forming a vanadium-containing intermediate phase by reacting the vanadium-containing precursor with oxygen molecules; and forming a first thin film by reacting the vanadium-containing intermediate phase with water.
wherein, in Formula 1,
0.3≤x≤0.7, and
2.5≤y≤3.0.
-
-
-
-
-
-
-
-
-
搜索结果
55 条记录 (耗时 0.026 秒)
