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1.发明公开公开(公告)号：US20240032308A1
公开(公告)日：2024-01-25
申请号：US18478776
申请日：2023-09-29
发明人： Wooyoung YANG , Bonwon KOO , Chungman KIM , Kwangmin PARK , Hajun SUNG , Dongho AHN , Changseung LEE , Minwoo CHOI
CPC分类号： H10B63/24 , G11C13/0004 , H10B61/10 , H10B63/84 , H10N50/01 , H10N50/80 , H10N70/24 , H10N70/25 , H10N70/063 , H10N70/231 , H10N70/8413 , H10N70/8825 , H10N70/8828 , H10N70/8833 , H10N70/8836
摘要： A chalcogen compound layer exhibiting ovonic threshold switching characteristics, a switching device, a semiconductor device, and/or a semiconductor apparatus including the same are provided. The switching device and/or the semiconductor device may include two or more chalcogen compound layers having different energy band gaps. Alternatively, the switching device and/or semiconductor device may include a chalcogen compound layer having a concentration gradient of an element of boron (B), aluminum (Al), scandium (Sc), manganese (Mn), strontium (Sr), and/or indium (In) in a thickness direction thereof. The switching device and/or a semiconductor device may exhibit stable switching characteristics while having a low off-current value (leakage current value).
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2.发明申请公开(公告)号：US20170058402A1
公开(公告)日：2017-03-02
申请号：US15014568
申请日：2016-02-03
发明人： Xianyu WENXU , Yongsung KIM , Jaikwang SHIN , Wooyoung YANG
IPC分类号： C23C16/455 , C23C16/44
摘要： A shower head of a combinatorial spatial atomic layer deposition (CS-ALD) apparatus may be provided. The shower head of the CS-ALD apparatus may include a plurality of shower blocks. Each of shower blocks may include a plurality of unit modules. Each of the shower blocks and each of the unit modules may be controlled independently from each other. Each of the plurality of unit modules may include a source gas injection nozzle, a purge gas injection nozzle, a reactant gas injection nozzle, and exhaust areas between the injection nozzles. The plurality of shower blocks may be separated from each other. Gas injection areas of the injection nozzles may be separated from the exhaust area.
摘要翻译： 可以提供组合空间原子层沉积（CS-ALD）装置的喷头。 CS-ALD装置的喷头可以包括多个淋浴块。 每个淋浴块可以包括多个单元模块。 每个淋浴块和每个单元模块可以彼此独立地控制。 多个单元模块中的每一个可以包括源气体喷射喷嘴，吹扫气体喷射喷嘴，反应气体喷射喷嘴和喷射喷嘴之间的排气区域。 多个淋浴块可以彼此分离。 注射喷嘴的气体注入区域可以与排气区域分离。
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3.发明公开公开(公告)号：US20240057347A1
公开(公告)日：2024-02-15
申请号：US18348846
申请日：2023-07-07
发明人： Wooyoung YANG , Hyungjun Kim , Hajun Sung , Kiyeon Yang , Changseung Lee , Changyup Park , Seung-min Chung , Sangyoon Lee , Inkyu Sohn
CPC分类号： H10B63/10 , H10N70/231 , H10N70/8822 , H10N70/826 , H10N70/828 , H10B63/20 , H10N70/023 , H10N70/8825
摘要： A memory element includes a substrate, a first electrode formed on the substrate, a phase-change heterolayer formed on the first electrode and electrically connected to the first electrode, and a second electrode formed on the phase-change heterolayer, wherein the phase-change heterolayer includes one or more confinement material layers and one or more phase-change material layers, and the confinement material layer includes a metal chalcogenide film.
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公开(公告)号：US20180190909A1
公开(公告)日：2018-07-05
申请号：US15635990
申请日：2017-06-28
发明人： Xianyu WENXU , Yongyoung PARK , Kideok BAE , Wooyoung YANG , Changseung LEE
CPC分类号： H01L22/12 , G01M11/0228 , G01N3/068 , G01N3/08 , G01N2203/0278 , G01N2203/0282 , G01N2203/0641 , H01L21/67288 , H01L22/20 , H01L22/24 , H01L22/26 , H01L51/0031 , H01L51/0096 , H01L51/5253 , Y02E10/549
摘要： A method of evaluating the quality of a thin film layer may include: forming the thin film layer on a substrate; applying a stress to the thin film layer; and evaluating the quality of the thin film layer. A device for evaluating the quality of the thin film layer may include a stress chamber for applying a stress to the thin film layer and a refractive index measuring unit for evaluating the quality of the thin film layer based on a rate of change of a refractive index.
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公开(公告)号：US20160247906A1
公开(公告)日：2016-08-25
申请号：US15026681
申请日：2014-09-16
发明人： Xianyu WENXU , Yongsung KIM , Changyoul MOON , Yongyoung PARK , Wooyoung YANG , Jeongyub LEE , Jooho LEE
IPC分类号： H01L29/78 , H01L29/45 , H01L29/10 , H01L29/08 , H01L29/24 , H01L29/423 , H01L29/16 , H01L21/3105 , H01L21/306 , H01L29/47 , H01L29/06
CPC分类号： H01L29/78 , H01L21/30625 , H01L21/31051 , H01L29/0653 , H01L29/0847 , H01L29/1033 , H01L29/1606 , H01L29/24 , H01L29/42364 , H01L29/4238 , H01L29/45 , H01L29/47 , H01L29/66045 , H01L29/7781
摘要： Provided are semiconductor devices and methods of manufacturing the same. A semiconductor device may include a source, a drain, a semiconductor element between the source and the drain, and a graphene layer that is provided on the source and the semiconductor element and is spaced apart from the drain. Surfaces of the source and the drain are substantially co-planar with a surface of the semiconductor element. The semiconductor element may be spaced apart from the source and may contact the drain. The graphene layer may have a planar structure. A gate insulating layer and a gate may be provided on the graphene layer. The semiconductor device may be a transistor. The semiconductor device may have a barristor structure. The semiconductor device may be a planar type graphene barristor.
摘要翻译： 提供半导体器件及其制造方法。 半导体器件可以包括源极，漏极，源极和漏极之间的半导体元件以及设置在源极和半导体元件上并与漏极间隔开的石墨烯层。 源极和漏极的表面与半导体元件的表面基本上共面。 半导体元件可以与源极间隔开并且可以接触漏极。 石墨烯层可以具有平面结构。 栅极绝缘层和栅极可以设置在石墨烯层上。 半导体器件可以是晶体管。 该半导体器件可以具有一个截击器结构。 半导体器件可以是平面型石墨烯阻尼器。
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公开(公告)号：US20240147735A1
公开(公告)日：2024-05-02
申请号：US18187151
申请日：2023-03-21
发明人： Sung HEO , Hajun SUNG , Seongyong PARK , Wooyoung YANG , Dongjin YUN
摘要： A switching device including a first electrode layer, a second electrode layer arranged to face the first electrode layer, and a selection layer arranged between the first electrode layer and the second electrode layer, wherein the first electrode layer is doped with at least one of manganese (Mn), iron (Fe), niobium (Nb), molybdenum (Mo), technetium (Tc), ruthenium (Ru), rhodium (Rh), hafnium (Hf), tantalum (Ta), tungsten (W), rhenium (Re), iridium (Ir), or platinum (Pt), may be provided.
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公开(公告)号：US20170373304A1
公开(公告)日：2017-12-28
申请号：US15584234
申请日：2017-05-02
发明人： Youngeal KIM , Wooyoung YANG , Kihong KIM , Hyorang KANG
摘要： A lithium battery includes an anode, a cathode, and a protective film disposed on at least one of the anode and the cathode, in which the protective film includes a compound including: i) at least one element selected from a Group 13 element, a Group 14 element, a Group 15 element, and a first Group 16 element; and ii) a second Group 16 element, in which the first Group 16 element is different from the second Group 16 element.
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8.发明申请PRODUCTION METHOD FOR NEGATIVE ELECTRODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY, AND LITHIUM SECONDARY BATTERY 审中-公开用于锂二次电池的负极电极活性材料的生产方法和锂二次电池公开(公告)号：US20160329556A1
公开(公告)日：2016-11-10
申请号：US15108127
申请日：2014-08-22
发明人： Kyueun SHIM , Jumyeung LEE , Donggyu CHANG , Wooyoung YANG
IPC分类号： H01M4/134 , H01M4/36 , H01M10/0525 , H01M4/1395
CPC分类号： H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/386 , H01M4/625 , H01M10/052 , H01M10/0525 , H01M2004/027
摘要： The present invention relates to a production method for a negative electrode active material for a lithium secondary battery, and to a lithium secondary battery, and provides a production method for a lithium secondary battery negative electrode active material that is produced by mechanically grinding or crushing, in dry or wet conditions, particulate silicon, which is in a secondary particle state formed by agglomerating crystalline and amorphous silicon primary particles.
摘要翻译： 本发明涉及一种锂二次电池用负极活性物质和锂二次电池的制造方法，提供了通过机械研磨或粉碎而制造的锂二次电池负极活性物质的制造方法， 在干燥或潮湿的条件下，通过结晶和非晶硅一次粒子聚结而形成二次粒子状态的微粒硅。
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公开(公告)号：US20230088249A1
公开(公告)日：2023-03-23
申请号：US17717611
申请日：2022-04-11
发明人： Wooyoung YANG , Segab KWON , Hajun SUNG , Dongho AHN , Changseung LEE , Minwoo CHOI
摘要： Provided are a semiconductor device and a semiconductor apparatus. The semiconductor device may include a first electrode; a second electrode spaced apart from the first electrode; and a selection device layer including a chalcogen compound layer between the first electrode and the second electrode and a metal oxide doped in the chalcogen compound layer. In the semiconductor device, by doping the metal oxide, an off-current value (leakage current value) of the selection device layer may be reduced, and static switching characteristics may be implemented.
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公开(公告)号：US20230042262A1
公开(公告)日：2023-02-09
申请号：US17522197
申请日：2021-11-09
发明人： Minwoo CHOI , Bonwon KOO , Yongyoung PARK , Hajun SUNG , Dongho AHN , Kiyeon YANG , Wooyoung YANG , Changseung LEE
摘要： Provided are a switching device and a memory device including the switching device. The switching device includes first and second electrodes, and a switching material layer provided between the first and second electrodes and including a chalcogenide. The switching material layer includes a core portion and a shell portion covering a side surface of the core portion. The switching layer includes a material having an electrical resistance greater than an electrical resistance of the core portion, for example in at least one of the core portion or the shell portion.
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