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31.
公开(公告)号:US20220344463A1
公开(公告)日:2022-10-27
申请号:US17719996
申请日:2022-04-13
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Hakchul Jung , Myunggil Kang , Jungho Do , Sanghoon Baek
IPC: H01L29/06 , H01L27/088 , H01L29/786 , H01L23/48
Abstract: An integrated circuit may include a first cell and a second cell. The first cell includes a first transistor in which nanosheets included in a first nanosheet stack and a second nanosheet stack extend in a first direction to pass through a first gate electrode that extends in a second direction intersecting with the first direction. The second cell includes a second transistor in which one or more nanosheets included in a third nanosheet stack extends in the first direction to pass through a second gate electrode that extends in the second direction. A length of the first cell in the second direction may be greater than a length of the second cell in the second direction.
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公开(公告)号:US11329039B2
公开(公告)日:2022-05-10
申请号:US16842053
申请日:2020-04-07
Applicant: Samsung Electronics Co., Ltd.
Inventor: Sanghoon Baek , Myung Gil Kang , Jae-Ho Park , Seung Young Lee
IPC: H01L27/02 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/786 , H01L27/118
Abstract: An integrated circuit includes first and second active regions, first and second standard cells on the first active region and the second active region, and a filler cell between the first and second standard cells and including first and second insulating isolations. The filler cell has a one-pitch dimension. The first and second insulating isolations are spaced the one-pitch dimension apart from each other. The first insulating isolation of the filler cell is disposed at a first boundary between the first standard cell and the filler cell. The second insulating isolation of the filler cell is disposed at a second boundary between the second standard cell and the filler cell. The first and second insulating isolations separate at least a part of the first active region, and at least a part of the second active region.
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公开(公告)号:US10541243B2
公开(公告)日:2020-01-21
申请号:US15355159
申请日:2016-11-18
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jung-Ho Do , Seungyoung Lee , Jonghoon Jung , Jinyoung Lim , Giyoung Yang , Sanghoon Baek , Taejoong Song
IPC: H01L27/11 , H01L23/522 , H01L23/485
Abstract: A semiconductor device including: a conductor disposed on a substrate; a first contact disposed on the conductor; a second contact having a first portion disposed on the first contact and a second portion protruded away from the first portion in a direction parallel to the substrate, wherein the first and second contacts are disposed in an insulating layer; a via disposed on the insulating layer and the second portion of the second contact; and a metal line disposed on the via.
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公开(公告)号:US10096520B2
公开(公告)日:2018-10-09
申请号:US15392725
申请日:2016-12-28
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sanghoon Baek , Jae-Ho Park , Seolun Yang , Taejoong Song , Sang-Kyu Oh
IPC: H01L21/82 , H01L21/02 , H01L21/30 , H01L21/8234 , H01L21/027 , H01L21/308 , H01L21/762 , H01L27/02 , H01L27/108 , H01L27/11 , H01L29/78
Abstract: A method of fabricating a semiconductor device having a first region, a second region, and a third region between the first and second regions includes forming first and second preliminary active patterns protruding from a substrate in the first and second regions, respectively, forming mask patterns exposing the third region on the substrate, performing a first etching process using the mask patterns an etch mask to form first and second active patterns, respectively, and forming gate structures on the substrate.
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35.
公开(公告)号:US09536946B2
公开(公告)日:2017-01-03
申请号:US14833983
申请日:2015-08-24
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jae-Ho Park , Taejoong Song , Sanghoon Baek , Jintae Kim , Giyoung Yang , Hyosig Won
IPC: H01L27/088 , H01L29/06 , H01L29/08 , H01L29/417 , H01L27/02 , H01L27/092 , H01L21/8238
CPC classification number: H01L29/0642 , H01L21/768 , H01L21/76816 , H01L21/823871 , H01L27/0207 , H01L27/092 , H01L27/0924 , H01L29/0847 , H01L29/41758 , H01L29/41791
Abstract: A semiconductor device includes a substrate having an active region, a gate structure intersecting the active region and extending in a first direction parallel to a top surface of the substrate, a first source/drain region and a second source/drain region disposed in the active region at both sides of the gate structure, respectively, and a first modified contact and a second modified contact in contact with the first source/drain region and the second source/drain region, respectively. The distance between the gate structure and the first modified contact is smaller than the distance between the gate structure and the second modified contact.
Abstract translation: 半导体器件包括具有有源区的衬底,与有源区相交且在平行于衬底顶表面的第一方向上延伸的栅极结构,设置在有源区中的第一源极/漏极区和第二源极/漏极区 分别与第一源极/漏极区域和第二源极/漏极区域接触的第一修改触点和第二修改触点。 栅极结构和第一改性接触之间的距离小于栅极结构和第二改性接触之间的距离。
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公开(公告)号:US20250087586A1
公开(公告)日:2025-03-13
申请号:US18960252
申请日:2024-11-26
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungho Do , Sanghoon Baek
IPC: H01L23/528 , H01L21/8238 , H01L27/02 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/78 , H01L29/786
Abstract: Disclosed is a semiconductor device comprising a mixed height cell on a substrate, and a first power line and a second power line that run across the mixed height cell. First to third line tracks are defined between the first power line and the second power line. A fourth line track is defined adjacent to the second power line. The second power line is between the third line track and the fourth line track. The mixed height cell includes a plurality of lower lines aligned with the first to fourth line tracks. A cell height of the mixed height cell is about 1.25 times to about 1.5 times a distance between a first point of the first power line and a corresponding second point of the second power line.
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公开(公告)号:US12131999B2
公开(公告)日:2024-10-29
申请号:US18512527
申请日:2023-11-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungho Do , Sanghoon Baek
IPC: H01L23/528 , H01L27/02 , H01L27/092 , H01L29/423 , H01L29/786
CPC classification number: H01L23/5286 , H01L27/0207 , H01L27/092 , H01L29/42392 , H01L29/78696
Abstract: A semiconductor device includes a substrate having an active region, a first group of standard cells arranged in a first row on the active region of the substrate and having a first height defined in a column direction, a second group of standard cells arranged in a second row on the active region of the substrate, and having a second height, and a plurality of power lines extending in a row direction and respectively extending along boundaries of the first and the second groups of standard cells. The first and second groups of standard cells each further include a plurality of wiring lines extending in the row direction and arranged in the column direction, and at least some of wiring lines in at least one standard cell of the first and second groups of standard cells are arranged at different spacings and/or pitches.
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公开(公告)号:US12034008B2
公开(公告)日:2024-07-09
申请号:US18336754
申请日:2023-06-16
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Sanghoon Baek , Jungho Do , Jaewoo Seo , Jisu Yu
IPC: H01L27/02 , H01L23/48 , H01L27/118
CPC classification number: H01L27/11807 , H01L23/481 , H01L27/0207 , H01L2027/11829 , H01L2027/11864 , H01L2027/11881
Abstract: A semiconductor device includes a first standard cell disposed on a substrate in a first row and having a first cell height; a second standard cell disposed on the substrate in a second row, adjacent to the first row, second standard cell having a second cell height, different from the first cell height; and a power line extending in a first direction along a boundary between the first standard cell and the second standard cell.
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公开(公告)号:US20230307436A1
公开(公告)日:2023-09-28
申请号:US18185414
申请日:2023-03-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Jungho Do , Taejoong Song , Sanghoon Baek , Jisu Yu , Hyeongyu You , Minjae Jeong , Jonghoon Jung
IPC: H01L27/02 , H01L29/78 , H01L29/423 , H01L29/775 , H01L29/06 , H01L29/786 , H01L27/088
CPC classification number: H01L27/0207 , H01L29/7851 , H01L29/42392 , H01L29/775 , H01L29/0673 , H01L29/78696 , H01L27/0886
Abstract: An integrated circuit may include a first function cell and a second function cell each corresponding to a first circuit, wherein the first function cell may include a first pattern extending in a first direction along a first grid in a first layer and a second pattern extending in the first direction along a second grid in a second layer, the first grid may have a first pitch greater than a second pitch of the second grid in a second direction crossing the first direction, and the second function cell may include a layout of the first function cell and have a length greater than a length of the first function cell by the first pitch in the second direction.
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公开(公告)号:US11755809B2
公开(公告)日:2023-09-12
申请号:US17458948
申请日:2021-08-27
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jisu Yu , Jaewoo Seo , Hyeongyu You , Sanghoon Baek , Jonghoon Jung
IPC: G06F30/00 , G06F30/392 , H01L23/50 , H01L27/02
CPC classification number: G06F30/392 , H01L23/50 , H01L27/0207
Abstract: An integrated circuit is provided. The integrated circuit includes a first cell that has a first height and is arranged in a first row which extends in a first direction; a second cell that has a second height and is arranged in a second row which extends in the first direction and is adjacent to the first row, wherein the second cell is adjacent to the first cell in a second direction perpendicular to the first direction; and a power line that extends in the first direction, is arranged on a boundary between the first cell and the second cell, and is configured to supply power to the first cell and the second cell. The first cell overlaps a first width of the power line along the second direction and the second cell overlaps a second width of the power line along the second direction, and the first width and the second width are different from each other.
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