公开(公告)号：US12190928B2

公开(公告)日：2025-01-07

申请号：US17970788

申请日：2022-10-21

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Younghyun Kim ,  Sechung Oh ,  Heeju Shin ,  Jaehoon Kim ,  Sanghwan Park ,  Junghwan Park

IPC: G11C11/00 ,  G11C11/16 ,  H10B61/00 ,  H10N50/10 ,  H10N50/80 ,  H10N50/85

Abstract: A magnetoresistive random access memory device includes a pinned layer; a tunnel barrier layer on the pinned layer; a free layer structure on the tunnel barrier layer, the free layer structure including a plurality of magnetic layers and a plurality of metal insertion layers between the magnetic layers; and an upper oxide layer on the free layer structure, wherein each of the metal insertion layers includes a non-magnetic metal material doped with a magnetic material, and the metal insertion layers are spaced apart from each other.

公开(公告)号：US12089962B2

公开(公告)日：2024-09-17

申请号：US17420807

申请日：2019-10-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Suho Lee ,  Younghyun Kim

IPC: A61B5/00 ,  A61B5/24 ,  A61B5/256 ,  A61B5/279 ,  H03F1/34

CPC classification number: A61B5/7225 ,  A61B5/24 ,  A61B5/256 ,  A61B5/279 ,  H03F1/34 ,  A61B2560/0468

Abstract: Disclosed in various embodiments of the present invention are a method and a device comprising: a first electrode, a second electrode and a third electrode which make contact with the body of a user; an instrumentation amplifier for differentially amplifying signals received from the first electrode and the second electrode; a feedback amplifier for feeding back feedback noise to the body of the user through the third electrode; and a control circuit, wherein the control circuit is configured to analyze a noise level by using a biosignal obtained from the instrumentation amplifier, and control the gain of the feedback amplifier on the basis of the result of the analysis. Various embodiments are possible.

公开(公告)号：US11672183B2

公开(公告)日：2023-06-06

申请号：US16803051

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hwan Park ,  Jae Hoon Kim ,  Younghyun Kim

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22 ,  G11C11/16 ,  H01L43/10 ,  H01L43/12

CPC classification number: H01L43/02 ,  H01F10/329 ,  H01F10/3254 ,  H01F10/3268 ,  H01F10/3286 ,  H01L27/228 ,  G11C11/161 ,  G11C11/1659 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern therebetween. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern. The second pinned pattern includes magnetic patterns and non-magnetic patterns, which are alternately stacked. The first pinned pattern is a ferromagnetic pattern consisted of a ferromagnetic element.

公开(公告)号：US20230074141A1

公开(公告)日：2023-03-09

申请号：US17720591

申请日：2022-04-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghwan Park ,  Younghyun Kim ,  Jaehoon Kim ,  Jeongheon Park ,  Sechung Oh

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22 ,  H01L43/10 ,  H01L43/12

Abstract: A magnetic device includes a seed pattern, a reference magnetic structure on the seed pattern, a free magnetic pattern on the reference magnetic structure, and a tunnel barrier between the reference magnetic structure and the free magnetic pattern. The reference magnetic structure includes a synthetic antiferromagnetic (SAF) structure including a first fixed pattern in contact with an upper surface of the seed pattern, an antiferromagnetic coupling pattern in contact with an upper surface of the first fixed pattern, and a second fixed pattern in contact with an upper surface of the antiferromagnetic coupling pattern; a nonmagnetic pattern in contact with an upper surface of the second fixed pattern; and a polarization reinforcement magnetic pattern in contact with an upper surface of the nonmagnetic pattern.

公开(公告)号：US11119608B2

公开(公告)日：2021-09-14

申请号：US16373116

申请日：2019-04-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sohyun Chung ,  Yongjin Lee ,  Younghyun Kim ,  Inho Yun

IPC: G06F3/042 ,  G06F1/16 ,  H04N5/225

Abstract: An electronic device is provided. The electronic device includes a housing that includes a sensing surface, a light emitting unit that outputs a light through the sensing surface, a light receiving unit that collects a reflection light reflected from an external object in contact with the sensing surface, after the light is output from the light emitting unit, and a first Fresnel lens that is disposed between the light receiving unit and the sensing surface. A first surface of the first Fresnel lens total reflects the reflection light introduced in a direction perpendicular to the sensing surface, and a second surface of the first Fresnel lens refracts the total reflected light so as to be introduced to the light receiving unit.

公开(公告)号：US20210020829A1

公开(公告)日：2021-01-21

申请号：US16803051

申请日：2020-02-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sang Hwan Park ,  Jae Hoon Kim ,  Younghyun Kim

IPC: H01L43/02 ,  H01F10/32 ,  H01L27/22

Abstract: A magnetic memory device includes a reference magnetic structure, a free magnetic structure, and a tunnel barrier pattern therebetween. The reference magnetic structure includes a first pinned pattern, a second pinned pattern between the first pinned pattern and the tunnel barrier pattern, and an exchange coupling pattern between the first pinned pattern and the second pinned pattern. The second pinned pattern includes magnetic patterns and non-magnetic patterns, which are alternately stacked. The first pinned pattern is a ferromagnetic pattern consisted of a ferromagnetic element.

公开(公告)号：US20190140165A1

公开(公告)日：2019-05-09

申请号：US16242555

申请日：2019-01-08

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SAMSUNG ELECTRONICS, CO., LTD.

Inventor： Guohan Hu ,  Younghyun Kim ,  Chandrasekara Kothandaraman ,  Jeong-Heon Park

IPC: H01L43/08 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/226 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a free magnetic layer formed on the tunnel barrier layer. A first boron-segregating layer is formed directly on the free magnetic layer. An anneal is performed to cause boron to leave the free magnetic layer at an interface with the first boron-segregating layer. A top electrode is formed over the memory stack.

公开(公告)号：US10219102B2

公开(公告)日：2019-02-26

申请号：US15667342

申请日：2017-08-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihoon Jang ,  Duseok Kim ,  Younghyun Kim ,  Suneung Park ,  Dongju Lee

IPC: H04W4/02 ,  H04W4/021 ,  H04W64/00 ,  H04W84/12 ,  H04B17/318

Abstract: In various example embodiments, an electronic device includes a communication module comprising communication circuitry, a memory, and a processor. The communication module is configured to receive access point (AP) information from each of a plurality of AP devices. The processor is configured to receive, from the AP information, a strength value of a signal and a unique value of the AP device that transmits the signal, and to processes the AP information, based on the strength value of the signal and the unique value of the AP device. Also, the processor is configured to create an AP list as information for indicating a location of the electronic device, based on a result of processing the AP information, and to store the created AP list in the memory. The processor is configured to determine whether the AP information satisfies a condition for performing a predefined function with regard to the AP list stored in the memory, and to perform the predefined function if the condition is satisfied.

公开(公告)号：US20180277748A1

公开(公告)日：2018-09-27

申请号：US15465050

申请日：2017-03-21

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  SAMSUNG ELECTRONICS, CO., LTD.

Inventor： Guohan Hu ,  Younghyun Kim ,  Chandrasekara Kothandaraman ,  Jeong-Heon Park

IPC: H01L43/08 ,  H01L27/22

CPC classification number: H01L43/08 ,  H01L27/226 ,  H01L43/02 ,  H01L43/10 ,  H01L43/12

Abstract: Memory devices and methods of forming the same include forming a memory stack over a bottom electrode. The memory stack has a fixed magnetic layer, a tunnel barrier layer on the fixed magnetic layer, and a free magnetic layer formed on the tunnel barrier layer. A boron-segregating layer is formed directly on the free magnetic layer. The memory stack is etched into a pillar. A top electrode is formed over the pillar.

公开(公告)号：US20180058967A1

公开(公告)日：2018-03-01

申请号：US15678006

申请日：2017-08-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji Hoon Jang ,  Du Seok Kim ,  Younghyun Kim ,  Suneung Park ,  Dongju Lee

IPC: G01L19/08

CPC classification number: G01L19/086 ,  G01C5/06 ,  G01C21/206

Abstract: Various exemplary embodiments of the present invention relate to an apparatus and method for providing location information of an external device by an electronic device. In this case, the electronic device includes an air pressure sensor, a display, and a processor. The processor may be configured for identifying air pressure of an external device, detecting air pressure of a region in which the electronic device is located by using the air pressure sensor. The processor may also be configured for detecting a direction in which the external device is located based on a difference between the air pressure of the external device and the air pressure of the region in which the electronic device is located. The processor may also be configured for controlling the display to display the direction in which the external device is located. Other exemplary embodiments may also be possible.