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公开(公告)号：US09870919B2
公开(公告)日：2018-01-16
申请号：US13864849
申请日：2013-04-17
申请人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
发明人： Joseph M. Ranish , Paul Brillhart , Jose Antonio Marin , Satheesh Kuppurao , Balasubramanian Ramachandran , Swaminathan T. Srinivasan , Mehmet Tugrul Samir
CPC分类号： H01L21/0262 , H01L21/67017 , H01L21/67109 , H01L21/67115
摘要： Embodiments of the present invention generally relate to chambers and methods of processing substrates therein. The chambers generally include separate process gas and purge gas regions. The process gas region and purge gas region each have a respective gas inlet and gas outlet. The methods generally include positioning a substrate on a substrate support within the chamber. The plane of the substrate support defines the boundary between a process gas region and purge gas region. Purge gas is introduced into the purge gas region through at least one purge gas inlet, and removed from the purge gas region using at least one purge gas outlet. The process gas is introduced into the process gas region through at least one process gas inlet, and removed from the process gas region through at least one process gas outlet. The process gas is thermally decomposed to deposit a material on the substrate.
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公开(公告)号：US07967911B2
公开(公告)日：2011-06-28
申请号：US11697937
申请日：2007-04-09
IPC分类号： C23C16/448 , C23F1/00 , H01L21/306 , C23C16/06 , C23C16/22
CPC分类号： C23C16/4482
摘要： Methods and apparatus are disclosed for the formation of vaporizing liquid precursor materials. The methods or apparatus can be used as part of a chemical vapor deposition apparatus or system, for example for forming films on substrates. The methods and apparatus involve providing a vessel for containing a liquid precursor and diffusing element having external cross-section dimensions substantially equal to the internal cross-sectional dimensions of the vessel.
摘要翻译： 公开了用于形成蒸发液体前体材料的方法和装置。 方法或装置可以用作化学气相沉积装置或系统的一部分，例如用于在基底上形成膜。 所述方法和装置包括提供用于容纳液体前体的容器和具有基本上等于容器的内部横截面尺寸的外部横截面尺寸的扩散元件。
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公开(公告)号：US06410456B1
公开(公告)日：2002-06-25
申请号：US09718443
申请日：2000-11-21
申请人： Christian M. Gronet , Peter A. Knoot , Gary E. Miner , Guangcai Xing , David R. Lopes , Satheesh Kuppurao
发明人： Christian M. Gronet , Peter A. Knoot , Gary E. Miner , Guangcai Xing , David R. Lopes , Satheesh Kuppurao
IPC分类号： C23C16455
CPC分类号： C01B13/322 , H01L21/02238 , H01L21/02255 , H01L21/3165 , H01L21/31662
摘要： A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.
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34.发明申请公开(公告)号：US20120006092A1
公开(公告)日：2012-01-12
申请号：US13237144
申请日：2011-09-20
IPC分类号： G01N29/02
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。
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35.发明授权Methods and apparatus for insitu analysis of gases in electronic device fabrication systems 有权电子设备制造系统中气体的原位分析方法和装置公开(公告)号：US08020427B2
公开(公告)日：2011-09-20
申请号：US12833936
申请日：2010-07-09
IPC分类号： G01N7/00
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。
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36.发明申请公开(公告)号：US20060029747A1
公开(公告)日：2006-02-09
申请号：US10914964
申请日：2004-08-09
申请人： James Cruse , Andreas Hegedus , Satheesh Kuppurao
发明人： James Cruse , Andreas Hegedus , Satheesh Kuppurao
CPC分类号： C23C16/455 , C23C8/10 , C23C8/36 , C23C16/24 , C23C16/45557 , C30B25/14 , C30B29/06 , H01L21/02381 , H01L21/02532 , H01L21/0262 , H01L21/28202 , H01L21/28211 , H01L21/28525 , H01L21/3115 , H01L21/3144
摘要： The amount of atoms diffused into a substrate may be made uniform or the thickness of a thin film may be made uniform in a low species utilization process by stopping the flow of gas into a reaction chamber during the low species utilization process. Stopping the flow of gas into a reaction chamber may entail closing the gate valve (the valve to the vacuum pump), stabilizing the pressure within the reaction chamber, and maintaining the stabilized pressure while stopping the gas flowing into the chamber. Low species utilization processes include the diffusion of nitrogen into silicon dioxide gate dielectric layers by decoupled plasma nitridation (DPN), the deposition of a silicon dioxide film by rapid thermal processing (RTP) or chemical vapor deposition (CVD), and the deposition of silicon epitaxial layers by CVD.
摘要翻译： 扩散到基板中的原子的量可以在低物质利用过程中通过在低物质利用过程中停止气体流入反应室而在低物质利用过程中使薄膜的厚度均匀。 停止进入反应室的气体流可能需要关闭闸阀（真空泵的阀），稳定反应室内的压力，并在停止流入室内的气体的同时保持稳定的压力。 低物种利用过程包括通过解耦等离子体氮化（DPN）将氮扩散到二氧化硅栅极电介质层中，通过快速热处理（RTP）或化学气相沉积（CVD）沉积二氧化硅膜，以及沉积硅 外延层通过CVD。
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公开(公告)号：US09512520B2
公开(公告)日：2016-12-06
申请号：US13441382
申请日：2012-04-06
IPC分类号： C23C16/54 , C23C16/06 , C23C16/44 , C23C16/455 , H01L21/67
CPC分类号： C23C16/54 , C23C16/06 , C23C16/4412 , C23C16/45565 , C23C16/45574 , H01L21/67115 , H01L21/67184 , H01L21/67201 , H01L21/67207
摘要： Apparatus for processing substrates are provided. In some embodiments, a processing system may include a first transfer chamber and a first process chamber coupled to the transfer chamber, the process chamber further comprising a substrate support to support a processing surface of a substrate within the process chamber, an injector disposed to a first side of the substrate support and having a first flow path to provide a first process gas and a second flow path to provide a second process gas independent of the first process gas, wherein the injector provides the first and second process gases across the processing surface of the substrate, a showerhead disposed above the substrate support to provide the first process gas to the processing surface, and an exhaust port disposed to a second side of the substrate support, opposite the injector, to exhaust the first and second process gases from the process chamber.
摘要翻译： 提供了用于处理衬底的设备。 在一些实施例中，处理系统可以包括耦合到传送室的第一传送室和第一处理室，处理室还包括用于支撑处理室内的基板的处理表面的基板支撑件， 所述衬底支撑件的第一侧面具有第一流动路径，以提供第一工艺气体和第二流动路径以提供独立于所述第一工艺气体的第二工艺气体，其中所述喷射器在所述处理表面上提供所述第一和第二工艺气体 基板支撑件上方的喷头，以将第一处理气体提供给处理表面;以及排气口，设置在与喷射器相对的基板支撑件的第二侧上，从而将第一和第二处理气体从 处理室。
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38.发明申请公开(公告)号：US20100275674A1
公开(公告)日：2010-11-04
申请号：US12833936
申请日：2010-07-09
IPC分类号： G01N7/00
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。
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39.发明授权Methods and apparatus for insitu analysis of gases in electronic device fabrication systems 有权电子设备制造系统中气体的原位分析方法和装置公开(公告)号：US07770431B2
公开(公告)日：2010-08-10
申请号：US11830832
申请日：2007-07-30
IPC分类号： G01N7/00
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译： 公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。 通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。 公开了许多其他方面。
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40.发明授权Reducing the deposition rate of volatile contaminants onto an optical component of a substrate processing system 失效将挥发性污染物的沉积速率降低到基板处理系统的光学部件上公开(公告)号：US06280790B1
公开(公告)日：2001-08-28
申请号：US08884192
申请日：1997-06-30
IPC分类号： C23C1600
CPC分类号： C23C16/45504 , C23C16/4401 , C23C16/4408 , C23C16/45508 , C23C16/45519 , C23C16/4586 , C23C16/46 , C23C16/52 , C30B25/10 , C30B25/14
摘要： A system and a method for reducing the rate at which volatile contaminants are deposited onto one or more optical components of a substrate processing system are disclosed. A purge fluid is introduced into the processing system at an interior surface of the processing system. A flow of purge fluid is produced across the interior surface to form a contaminant-entraining barrier between a source of the volatile contaminants and the one or more optical components and thereby reduce the rate at which volatile contaminants are deposited onto the optical components of the system. The purge fluid is substantially removed from the processing system.
摘要翻译： 公开了一种用于降低挥发性污染物沉积到基板处理系统的一个或多个光学部件上的速率的系统和方法。 在处理系统的内表面处将清洗流体引入处理系统中。 在内表面上产生清洗流体流，以在挥发性污染源和一个或多个光学部件之间形成污染物夹带势垒，从而降低挥发性污染物沉积到系统的光学部件上的速率 。 吹扫流体基本上从处理系统中移除。
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