公开(公告)号：US20150263174A1

公开(公告)日：2015-09-17

申请号：US14640379

申请日：2015-03-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Junichi KOEZUKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Daisuke KUROSAKI ,  Masataka NAKADA

IPC: H01L29/786 ,  H01L29/04 ,  H01L29/24

CPC classification number: H01L27/1225 ,  H01L29/045 ,  H01L29/24 ,  H01L29/36 ,  H01L29/66969 ,  H01L29/78606 ,  H01L29/78621 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: In a semiconductor device including a transistor, the transistor is provided over a first insulating film, and the transistor includes an oxide semiconductor film over the first insulating film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the oxide semiconductor film and the gate electrode, and a source and a drain electrodes electrically connected to the oxide semiconductor film. The first insulating film includes oxygen. The second insulating film includes hydrogen. The oxide semiconductor film includes a first region in contact with the gate insulating film and a second region in contact with the second insulating film. The first insulating film includes a third region overlapping with the first region and a fourth region overlapping with the second region. The impurity element concentration of the fourth region is higher than that of the third region.

Abstract translation: 在包括晶体管的半导体器件中，晶体管设置在第一绝缘膜上，并且晶体管包括在第一绝缘膜上的氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的栅电极 ，在氧化物半导体膜和栅电极之上的第二绝缘膜，以及电连接到氧化物半导体膜的源极和漏极。 第一绝缘膜包括氧。 第二绝缘膜包括氢。 氧化物半导体膜包括与栅极绝缘膜接触的第一区域和与第二绝缘膜接触的第二区域。 第一绝缘膜包括与第一区域重叠的第三区域和与第二区域重叠的第四区域。 第四区域的杂质元素浓度高于第三区域的杂质元素浓度。

公开(公告)号：US20150221777A1

公开(公告)日：2015-08-06

申请号：US14684774

申请日：2015-04-13

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yoshiaki OIKAWA ,  Masayuki KAJIWARA ,  Masataka NAKADA ,  Masami JINTYOU ,  Shunpei YAMAZAKI

IPC: H01L29/786

CPC classification number: H01L27/1266 ,  H01L21/568 ,  H01L23/3107 ,  H01L23/3114 ,  H01L27/1214 ,  H01L29/78606 ,  H01L29/78666 ,  H01L29/78669 ,  H01L2924/0002 ,  H01L2924/12044 ,  H01L2924/19041 ,  H01L2924/00

Abstract: An object is to improve water resistance and reliability of a semiconductor device by reducing the degree of peeling of a film. In a semiconductor device, a first inorganic insulating layer, a semiconductor element layer, a second inorganic insulating layer, an organic insulating layer, and a third inorganic insulating layer are sequentially stacked over a substrate. The second inorganic insulating layer is in contact with the first inorganic insulating layer in an opening portion provided in the semiconductor element layer. The third inorganic insulating layer is in contact with the second inorganic insulating layer in an opening portion provided in the organic insulating layer. In a region where the second inorganic insulating layer and the third inorganic insulating layer are in contact with each other, the second inorganic insulating layer has a plurality of irregularities or openings.

公开(公告)号：US20150221678A1

公开(公告)日：2015-08-06

申请号：US14604999

申请日：2015-01-26

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Kenichi OKAZAKI ,  Masahiro KATAYAMA ,  Masataka NAKADA

IPC: H01L27/12

CPC classification number: H01L27/1225 ,  H01L27/1255 ,  H01L27/3265 ,  H01L29/4908 ,  H01L29/78603 ,  H01L29/78645 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78696

Abstract: To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.

Abstract translation: 提供包括具有氧化物半导体和电容器的平面晶体管的半导体器件。 在半导体器件中，晶体管包括氧化物半导体膜，氧化物半导体膜上的栅极绝缘膜，栅极绝缘膜上的栅电极，栅极上的第二绝缘膜，第二绝缘膜上的第三绝缘膜 以及在所述第三绝缘膜上的源极和漏极; 源极和漏极电连接到氧化物半导体膜; 电容器包括第一和第二导电膜和第二绝缘膜; 第一导电膜和栅电极设置在相同的表面上; 第二导电膜和源电极和漏电极设置在相同的表面上; 并且第二绝缘膜设置在第一和第二导电膜之间。

公开(公告)号：US20250151538A1

公开(公告)日：2025-05-08

申请号：US18833581

申请日：2023-02-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masami JINTYOU ,  Masataka NAKADA ,  Junichi KOEZUKA ,  Kenichi OKAZAKI

IPC: H10K59/124 ,  H10K59/12 ,  H10K59/121

Abstract: A semiconductor device including a miniaturized transistor is provided. The semiconductor device includes a semiconductor layer, a first conductive layer, a second conductive layer, a third conductive layer, a first insulating layer, and a second insulating layer. The first insulating layer is provided over the first conductive layer. The first insulating layer has a first opening reaching the first conductive layer. The semiconductor layer is in contact with a top surface and a side surface of the first insulating layer and a top surface of the first conductive layer. The second conductive layer is provided over the semiconductor layer. The second conductive layer includes a second opening in a region overlapping with the first opening. The second insulating layer is provided over the semiconductor layer and the second conductive layer. The third conductive layer is provided over the second insulating layer. The first insulating layer has a stacked-layer structure of a third insulating layer and a fourth insulating layer over the third insulating layer. The fourth insulating layer includes a region having a film density higher than that of the third insulating layer.

公开(公告)号：US20250008780A1

公开(公告)日：2025-01-02

申请号：US18707700

申请日：2022-11-17

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Masataka NAKADA ,  Masahiro KATAYAMA ,  Rai SATO ,  Yasuharu HOSAKA ,  Toshimitsu OBONAI ,  Masayoshi DOBASHI ,  Koji KUSUNOKI ,  Tomonori NAKAYAMA

IPC: H10K59/122 ,  H10K59/131

Abstract: A display apparatus with high resolution is provided. The display apparatus includes a transistor, a light-emitting device, a first insulating layer, a second insulating layer, and a first conductive layer. The transistor includes a semiconductor layer and a second conductive layer electrically connected to the semiconductor layer. The light-emitting device includes a pixel electrode. The first insulating layer is provided over the transistor and includes a first opening reaching the second conductive layer. The first conductive layer covers the first opening. The second insulating layer is provided over the first insulating layer and includes a second opening in a region overlapping with the first opening. The pixel electrode covers a top surface of the second insulating layer and the second opening. The pixel electrode is electrically connected to the second conductive layer through the first conductive layer. An end portion of the first insulating layer is positioned over the second conductive layer. An end portion of the second insulating layer is positioned over the first conductive layer. An end portion of the second insulating layer is positioned outward from the end portion of the first insulating layer.

公开(公告)号：US20240389442A1

公开(公告)日：2024-11-21

申请号：US18693773

申请日：2022-09-12

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Kazuya SUGIMOTO ,  Ryo HATSUMI ,  Daisuke KUBOTA ,  Rai SATO ,  Masataka NAKADA ,  Yasutaka NAKAZAWA

IPC: H10K59/80 ,  H10K39/34

Abstract: A display apparatus having an image capturing function is provided. An image capturing device or a display apparatus capable of high-sensitivity image capturing can be provided. The display apparatus includes a first substrate, a second substrate facing the first substrate, a light-emitting element over the first substrate, a light-receiving element adjacent to the light-emitting element, a first light-blocking layer over the first substrate, a second light-blocking layer on the surface of the second substrate facing the first substrate, and a third light-blocking layer on the surface of the second light-blocking layer facing the first substrate. Each of the first to third light-blocking layers is provided between the light-emitting element and the light-receiving element in a plan view. The first light-blocking layer and the third light-blocking layer are provided so as to have a space between each other in a plan view.

公开(公告)号：US20240389441A1

公开(公告)日：2024-11-21

申请号：US18692873

申请日：2022-09-22

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Daisuke KUBOTA ,  Ryo HATSUMI ,  Rai SATO ,  Masataka NAKADA ,  Yasutaka NAKAZAWA

IPC: H10K59/80 ,  H10K39/34

Abstract: A display apparatus having an image capturing function is provided. Noise in image capturing is reduced. The display apparatus includes a first pixel electrode, a second pixel electrode, a first organic layer, a second organic layer, a common electrode, a spacer, a protective layer, and a light-blocking layer. The first organic layer is provided over the first pixel electrode. The second organic layer is provided over the second pixel electrode. The common electrode includes a portion overlapping with the first pixel electrode with the first organic layer positioned therebetween and a portion overlapping with the second pixel electrode with the second organic layer positioned therebetween. The protective layer is provided to cover the common electrode. The spacer has a light-transmitting property with respect to visible light and includes a portion overlapping with the first pixel electrode with the protective layer, the common electrode, and the first organic layer positioned therebetween. The light-blocking layer is provided over the spacer and includes an opening overlapping with the second pixel electrode. The first organic layer includes a photoelectric conversion layer, and the second organic layer includes a light-emitting layer.

公开(公告)号：US20240266443A1

公开(公告)日：2024-08-08

申请号：US18612525

申请日：2024-03-21

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Yasuharu HOSAKA ,  Yukinori SHIMA ,  Masataka NAKADA ,  Masami JINTYOU

IPC: H01L29/786 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/12 ,  H01L29/04 ,  H01L29/423 ,  H01L29/49 ,  H01L29/66 ,  H10K50/115 ,  H10K59/12 ,  H10K59/40

CPC classification number: H01L29/7869 ,  H01L29/04 ,  H01L29/423 ,  H01L29/42384 ,  H01L29/49 ,  H01L29/4908 ,  H01L29/66969 ,  H01L29/78633 ,  H01L29/78648 ,  G02F1/1368 ,  H01L21/426 ,  H01L27/1225 ,  H10K50/115 ,  H10K59/12 ,  H10K59/40

Abstract: A semiconductor device that includes a transistor is provided. The transistor includes a first conductive film that functions as a first gate electrode, a first gate insulating film, a first oxide semiconductor film that includes a channel region, a second gate insulating film, and a second oxide semiconductor film and a second conductive film that function as a second gate electrode. The second oxide semiconductor film includes a region higher in carrier density than the first oxide semiconductor film. The second conductive film includes a region in contact with the first conductive film.

公开(公告)号：US20210028392A1

公开(公告)日：2021-01-28

申请号：US17067148

申请日：2020-10-09

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Masataka NAKADA ,  Takayuki ABE ,  Naoyuki SENDA

IPC: H01L51/52 ,  H01L51/00

Abstract: A flexible device with fewer defects caused by a crack is provided. A flexible device with high productivity is also provided. Furthermore, a flexible device with less display failure even in a high temperature and high humidity environment is provided. A light-emitting device includes a first flexible substrate, a second flexible substrate, a buffer layer, a first crack inhibiting layer, and a light-emitting element. A first surface of the first flexible substrate faces a second surface of the second flexible substrate. The buffer layer and the first crack inhibiting layer are provided over the first surface of the first flexible substrate. The buffer layer overlaps with the first crack inhibiting layer. The light-emitting element is provided over the second surface of the second flexible substrate.

公开(公告)号：US20200373430A1

公开(公告)日：2020-11-26

申请号：US16635295

申请日：2018-08-22

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Yukinori SHIMA ,  Masataka NAKADA ,  Masayoshi DOBASHI ,  Kenichi OKAZAKI

IPC: H01L29/786 ,  G02F1/1368 ,  G02F1/1345

Abstract: A semiconductor device that can be highly integrated is provided. The semiconductor device includes a first semiconductor layer, a second semiconductor layer, a third semiconductor layer, a first insulating layer, a second insulating layer, a third insulating layer, a fourth insulating layer, a first conductive layer, and a second conductive layer. The second semiconductor layer is positioned over the first semiconductor layer, the second conductive layer is positioned on the second semiconductor layer, and the second insulating layer is provided so as to cover a top surface and a side surface of the second conductive layer. The second conductive layer and the second insulating layer include a first opening, and the third semiconductor layer is provided in contact with a top surface of the second insulating layer, a side surface of the first opening, and the second semiconductor layer. The first insulating layer is positioned between the first conductive layer and the third semiconductor layer, the third insulating layer is positioned between the first insulating layer and the first conductive layer, and the fourth insulating layer is provided so as to surround the first conductive layer.