公开(公告)号：US5041201A

公开(公告)日：1991-08-20

申请号：US403821

申请日：1989-09-07

申请人： Shunpei Yamazaki ,  Mitsunori Tsuchiya ,  Shigenori Hayashi ,  Naoki Hirose ,  Noriya Ishida ,  Mari Sasaki ,  Atsushi Kawano

发明人： Shunpei Yamazaki ,  Mitsunori Tsuchiya ,  Shigenori Hayashi ,  Naoki Hirose ,  Noriya Ishida ,  Mari Sasaki ,  Atsushi Kawano

IPC分类号： C23C16/26 ,  C23C16/517

CPC分类号： C23C16/517 ,  C23C16/26

摘要： Plasma CVD method and apparatus are described. The apparatus comprises a vacuum chamber in which two pairs of electrodes are provided. A high frequency voltage is applied to one of the pairs in order to produce a plasma from a reactive gas in the chamber. A substrate to be coated is located between the other of the pairs. A relatively low frequency voltage is applied to the other pair of electrodes. By virtue of the low frequency voltage, the substrate is exposed to the bombardment of ions of the plasma during deposition. The bombardment functions to remove relatively soft portions of the depositing material.

公开(公告)号：US4887548A

公开(公告)日：1989-12-19

申请号：US193680

申请日：1988-05-13

申请人： Kazuo Urata ,  Naoki Hirose ,  Shigenori Hayashi

发明人： Kazuo Urata ,  Naoki Hirose ,  Shigenori Hayashi

IPC分类号： H01L21/31 ,  C23C16/34 ,  C23C16/48 ,  H01L21/205

CPC分类号： C23C16/488

摘要： A thin film manufacturing system comprises a reaction vessel with a window that is transparent to ultraviolet radiation; a means of exhausting gas from the reaction vessel to a reduced pressure condition, a means of introducing a gas into the reaction vessel to form a thin film, a source of ultraviolet radiation that activates the gas, and slits provided at a predetermined interval on the window that is transparent to ultraviolet radiation.

摘要翻译： 薄膜制造系统包括具有对紫外线辐射透明的窗口的反应容器; 将气体从反应容器排出到减压状态的方法，将气体引入反应容器中以形成薄膜，激活气体的紫外线辐射源，以及以预定间隔设置的狭缝的方法 对紫外线辐射透明的窗户。

公开(公告)号：US07554156B2

公开(公告)日：2009-06-30

申请号：US11254727

申请日：2005-10-21

申请人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

发明人： Yoshinao Harada ,  Shigenori Hayashi ,  Masaaki Niwa

IPC分类号： H01L27/088

CPC分类号： H01L21/28229 ,  H01L21/28185 ,  H01L21/823807 ,  H01L21/823814 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/665 ,  H01L29/6659 ,  H01L29/7833

摘要： In a method for manufacturing a semiconductor device having an N-channel field effect transistor, the N-channel field effect transistor is formed by a process including the steps of forming a high dielectric constant gate insulating film on a substrate, forming a gate electrode on the high dielectric constant gate insulating film, forming an extension region by introducing N-type impurities into the substrate by using at least the gate electrode as a mask, and forming a pocket region by introducing P-type impurities under the extension region in the substrate by using at least the gate electrode as a mask. An amount of arsenic (As) that is introduced as the N-type impurities is in a range that is equal to or lower than a prescribed value that is determined based on a thickness of the high dielectric constant gate insulating film.

摘要翻译： 在制造具有N沟道场效应晶体管的半导体器件的方法中，N沟道场效应晶体管通过以下步骤形成，该方法包括以下步骤：在衬底上形成高介电常数栅极绝缘膜，形成栅电极 高介电常数栅极绝缘膜，通过至少使用栅电极作为掩模，将N型杂质引入基板，形成延伸区域，并通过在基板的延伸区域内引入P型杂质形成袋区域 至少使用栅电极作为掩模。 作为N型杂质而引入的砷（As）的量在等于或低于基于高介电常数栅极绝缘膜的厚度确定的规定值的范围内。

公开(公告)号：US20090130833A1

公开(公告)日：2009-05-21

申请号：US12357818

申请日：2009-01-22

申请人： Shigenori Hayashi ,  Riichiro Mitsuhashi

发明人： Shigenori Hayashi ,  Riichiro Mitsuhashi

IPC分类号： H01L21/4763

CPC分类号： H01L21/823842 ,  H01L21/28097 ,  H01L21/823835 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/66545

摘要： A semiconductor device includes: an n-transistor including a first gate insulating film made of a high-dielectric-constant material and a first gate electrode fully silicided with a metal, the first gate insulating film and the first gate electrode being formed in this order over a semiconductor region; and a p-transistor including a second gate insulating film made of the high-dielectric-constant material and a second gate electrode fully silicided with the metal, the second gate insulating film and the second gate electrode being formed in this order over the semiconductor region. If the metal has a work function larger than a Fermi level in potential energy of electrons of silicon, a metal concentration of the second gate electrode is higher than that of the first gate electrode whereas if the metal has a work function smaller than the Fermi level of silicon, a metal concentration of the second gate electrode is lower than that of the first gate electrode.

摘要翻译： 半导体器件包括：n型晶体管，其包括由高介电常数材料制成的第一栅极绝缘膜和完全硅化金属的第一栅电极，第一栅极绝缘膜和第一栅电极按此顺序形成 在半导体区域; 以及包括由高介电常数材料制成的第二栅极绝缘膜和完全硅化金属的第二栅电极的p晶体管，第二栅极绝缘膜和第二栅电极依次形成在半导体区域上 。 如果金属具有比硅的电子势能大于费米能级的功函数，则第二栅电极的金属浓度高于第一栅电极的金属浓度，而如果金属具有小于费米能级的功函数 的硅，第二栅电极的金属浓度低于第一栅电极的金属浓度。

公开(公告)号：US20060269798A1

公开(公告)日：2006-11-30

申请号：US11492995

申请日：2006-07-26

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G11B5/65

CPC分类号： G11B5/72 ,  G11B5/8408 ,  Y10T428/24942 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

公开(公告)号：US07115533B2

公开(公告)日：2006-10-03

申请号：US10319654

申请日：2002-12-16

申请人： Shigenori Hayashi ,  Kazuhiko Yamamoto

发明人： Shigenori Hayashi ,  Kazuhiko Yamamoto

IPC分类号： H01L21/31

CPC分类号： H01L21/02244 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02252 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/31683 ,  H01L29/517 ,  H01L29/518

摘要： The present invention provides a method of depositing a metal film on a substrate in a non-oxidizing atmosphere and then forming a metal oxide film by oxidizing the metal film in an oxidizing atmosphere.

公开(公告)号：US06667246B2

公开(公告)日：2003-12-23

申请号：US10309038

申请日：2002-12-04

申请人： Riichiro Mitsuhashi ,  Masafumi Kubota ,  Shigenori Hayashi

发明人： Riichiro Mitsuhashi ,  Masafumi Kubota ,  Shigenori Hayashi

IPC分类号： H01L2131

CPC分类号： H01L21/28185 ,  H01L21/31111 ,  H01L29/517 ,  H01L29/66545

摘要： A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.

摘要翻译： 对其上沉积有金属氧化物膜的基板进行退火，然后将金属氧化物膜的表面暴露于等离子体，之后通过湿法蚀刻除去金属氧化物膜。

公开(公告)号：US6001431A

公开(公告)日：1999-12-14

申请号：US604713

申请日：1996-02-21

申请人： Kenji Itoh ,  Shigenori Hayashi

发明人： Kenji Itoh ,  Shigenori Hayashi

IPC分类号： C23C16/02 ,  C23C16/26 ,  C23C16/509 ,  C23C16/54 ,  G11B5/72 ,  G11B5/84 ,  H05H1/24 ,  C23C16/50

CPC分类号： G11B5/8408 ,  C23C16/26 ,  C23C16/509 ,  C23C16/545 ,  G11B5/72 ,  Y10S427/106

摘要： A process for depositing a diamond-like carbon film, which comprises providing a means for generating a sheet-like beam-type plasma region inside a vacuum vessel for depositing the diamond-like carbon film, and depositing the film on a substrate being moved through said plasma region. Also claimed is an apparatus for fabricating a magnetic recording medium by sequentially and continuously forming a magnetic layer and a diamond-like carbon film on a polymer substrate material, which comprises at least a first vacuum vessel for forming the magnetic layer of the magnetic recording medium and a second vacuum vessel for forming the diamond-like carbon film, provided that the pressure difference between the operation pressures for the first vessel and the second vessel is set in the range of from 10.sup.-2 to 10.sup.-5 Torr.

摘要翻译： 一种用于沉积类金刚石碳膜的方法，其包括提供用于在真空容器内产生片状束型等离子体区域的装置，用于沉积类金刚石碳膜，并将膜沉积在基底上移动 所述等离子体区域。 还要求保护的是一种用于通过在聚合物基底材料上依次连续地形成磁性层和类金刚石碳膜来制造磁记录介质的装置，其至少包括用于形成磁记录介质的磁性层的第一真空容器 以及用于形成类金刚石碳膜的第二真空容器，条件是第一容器和第二容器的操作压力之间的压力差设定在10-2至10-5乇的范围内。

公开(公告)号：US5989672A

公开(公告)日：1999-11-23

申请号：US823541

申请日：1997-03-25

申请人： Shigenori Hayashi

发明人： Shigenori Hayashi

IPC分类号： G11B5/72 ,  G11B5/84 ,  G11B5/66

CPC分类号： G11B5/72 ,  G11B5/8408 ,  Y10S428/90 ,  Y10T428/24355 ,  Y10T428/265 ,  Y10T428/30

摘要： A magnetic recording medium having a diamond-like carbon (DLC) film added therein a Group IV element of the periodic table such as silicon, particularly in the vicinity of the boundary between the magnetic material and the formed DLC film. Since a DLC having low friction coefficient can be formed, the centerline average roughness can be reduced to 30 nm or even less. Accordingly, a magnetic recording medium improved in magnetic properties and in lubricity can be obtained.

公开(公告)号：US5525447A

公开(公告)日：1996-06-11

申请号：US319718

申请日：1994-10-07

申请人： Hiroshi Ikuno ,  Narihito Kojima ,  Hiroshi Nagame ,  Shunpei Yamazaki ,  Shigenori Hayashi

发明人： Hiroshi Ikuno ,  Narihito Kojima ,  Hiroshi Nagame ,  Shunpei Yamazaki ,  Shigenori Hayashi

IPC分类号： G03G5/147 ,  G03G5/14

CPC分类号： G03G5/14704

摘要： An electrophotographic photoconductor includes an electroconductive support; a photoconductive layer formed on the electroconductive support; and a surface protective layer formed on the photoconductive layer, the surface protective layer having a hydrogen-containing diamond-like carbon structure or amorphous carbon structure, containing therein an additive element selected from the group consisting of nitrogen, fluorine, boron, phosphorous, chlorine, bromine and iodine, with the atomic ratio of the additive element to the carbon contained in the surface protective layer being larger in the vicinity of the top surface of the surface protective layer than in the vicinity of the photoconductive layer adjacent to the surface protective layer.

摘要翻译： 电子照相感光体包括导电载体; 形成在导电载体上的光电导层; 以及形成在光电导层上的表面保护层，表面保护层具有含氢的类金刚石碳结构或无定形碳结构，其中含有选自氮，氟，硼，磷，氯的添加元素 ，溴和碘，表面保护层中包含的添加元素与碳的原子比在表面保护层的顶表面附近比在与表面保护层相邻的光电导层附近更大 。