公开(公告)号：US06667246B2

公开(公告)日：2003-12-23

申请号：US10309038

申请日：2002-12-04

申请人： Riichiro Mitsuhashi ,  Masafumi Kubota ,  Shigenori Hayashi

发明人： Riichiro Mitsuhashi ,  Masafumi Kubota ,  Shigenori Hayashi

IPC分类号： H01L2131

CPC分类号： H01L21/28185 ,  H01L21/31111 ,  H01L29/517 ,  H01L29/66545

摘要： A substrate with a metal oxide film deposited thereon is annealed, and then the surface of the metal oxide film is exposed to a plasma, after which the metal oxide film is removed by wet-etching.

摘要翻译： 对其上沉积有金属氧化物膜的基板进行退火，然后将金属氧化物膜的表面暴露于等离子体，之后通过湿法蚀刻除去金属氧化物膜。

公开(公告)号：US08216922B2

公开(公告)日：2012-07-10

申请号：US13051436

申请日：2011-03-18

申请人： Shigenori Hayashi ,  Masafumi Kubota ,  Yuichiro Sasaki

发明人： Shigenori Hayashi ,  Masafumi Kubota ,  Yuichiro Sasaki

IPC分类号： H01L21/26 ,  H01L21/42

CPC分类号： H01L21/2236

摘要： Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.

摘要翻译： 使用由含有作为掺杂剂的杂质的气体制成的等离子体掺杂进行。 在这种情况下，以脉冲的形式提供等离子体产生高频功率和偏置高频功率中的至少一个。

公开(公告)号：US07094639B2

公开(公告)日：2006-08-22

申请号：US10662288

申请日：2003-09-16

申请人： Masafumi Kubota ,  Shigenori Hayashi

发明人： Masafumi Kubota ,  Shigenori Hayashi

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L21/28194 ,  H01L21/268 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/324 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

公开(公告)号：US20120034750A1

公开(公告)日：2012-02-09

申请号：US13264660

申请日：2010-10-28

申请人： Yuichiro Sasaki ,  Masafumi Kubota ,  Shigenori Hayashi

发明人： Yuichiro Sasaki ,  Masafumi Kubota ,  Shigenori Hayashi

IPC分类号： H01L21/336 ,  C23C16/50 ,  C23C16/455

CPC分类号： H01L29/66803 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/2236

摘要： After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13).

摘要翻译： 在衬底（11）上形成鳍状半导体区域（13）之后，使用含杂质的气体和含氧气体在鳍状半导体区域（13）上进行等离子体掺杂。 这在散热片半导体区域（13）的至少侧边部形成杂质掺杂区域（17）。

公开(公告)号：US08574972B2

公开(公告)日：2013-11-05

申请号：US13264660

申请日：2010-10-28

申请人： Yuichiro Sasaki ,  Masafumi Kubota ,  Shigenori Hayashi

发明人： Yuichiro Sasaki ,  Masafumi Kubota ,  Shigenori Hayashi

IPC分类号： H01L21/00

CPC分类号： H01L29/66803 ,  H01J37/32422 ,  H01J37/3244 ,  H01J37/32449 ,  H01L21/2236

摘要： After a fin-semiconductor region (13) is formed on a substrate (11), impurity-containing gas and oxygen-containing gas are used to perform plasma doping on the fin-semiconductor region (13). This forms impurity-doped region (17) in at least side portions of the fin-semiconductor region (13).

摘要翻译： 在衬底（11）上形成鳍状半导体区域（13）之后，使用含杂质的气体和含氧气体在鳍状半导体区域（13）上进行等离子体掺杂。 这在散热片半导体区域（13）的至少侧边部形成杂质掺杂区域（17）。

公开(公告)号：US20110230038A1

公开(公告)日：2011-09-22

申请号：US13051436

申请日：2011-03-18

申请人： Shigenori Hayashi ,  Masafumi Kubota ,  Yuichiro Sasaki

发明人： Shigenori Hayashi ,  Masafumi Kubota ,  Yuichiro Sasaki

IPC分类号： H01L21/263

CPC分类号： H01L21/2236

摘要： Plasma doping is performed using a plasma made of a gas containing an impurity which will serve as a dopant. In this case, at least one of plasma generation high-frequency power and biasing high-frequency power is supplied in the form of pulses.

摘要翻译： 使用由含有作为掺杂剂的杂质的气体制成的等离子体掺杂进行。 在这种情况下，以脉冲的形式提供等离子体产生高频功率和偏置高频功率中的至少一个。

公开(公告)号：US20060205131A1

公开(公告)日：2006-09-14

申请号：US11411929

申请日：2006-04-27

申请人： Masafumi Kubota ,  Shigenori Hayashi

发明人： Masafumi Kubota ,  Shigenori Hayashi

IPC分类号： H01L21/8234

CPC分类号： H01L21/28194 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/02181 ,  H01L21/02238 ,  H01L21/02266 ,  H01L21/0228 ,  H01L21/02332 ,  H01L21/0234 ,  H01L21/268 ,  H01L21/28176 ,  H01L21/28202 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/324 ,  H01L28/40 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518

摘要： An underlying insulting film of silicon oxide, a gate insulating film of hafnium oxide, a gate electrode of polysilicon, and side walls of silicon oxide are formed above an element formation region of a semiconductor substrate. In the upper portion of the element formation region of the semiconductor substrate, source and drain areas and extension areas are formed by implantations of respective types. Thereafter, the scan speed of the semiconductor substrate and the pulse interval and the peak power of laser beam are adjusted to irradiate only the vicinity of the surface of the semiconductor substrate with laser beam for 0.1 second so that the vicinity of the surface of the semiconductor substrate has a temperature of 1150 to 1250° C. Thus, heat treatments for the gate insulating film and the source and drain areas are performed.

摘要翻译： 在半导体衬底的元件形成区域之上形成氧化硅的基底绝缘膜，氧化铪栅极绝缘膜，多晶硅栅电极和氧化硅侧壁。 在半导体衬底的元件形成区域的上部，通过各种类型的注入来形成源极和漏极区域以及延伸区域。 此后，调整半导体衬底的扫描速度和脉冲间隔以及激光束的峰值功率，以仅使激光束的半导体衬底的表面附近仅照射0.1秒，使得半导体的表面附近 基板的温度为1150〜1250℃。因此，进行栅极绝缘膜和源极和漏极区域的热处理。

公开(公告)号：US5928528A

公开(公告)日：1999-07-27

申请号：US921896

申请日：1997-09-02

申请人： Masafumi Kubota ,  Shigenori Hayashi ,  Michinari Yamanaka ,  Kenji Harafuji

发明人： Masafumi Kubota ,  Shigenori Hayashi ,  Michinari Yamanaka ,  Kenji Harafuji

IPC分类号： C23C14/34 ,  C23C16/50 ,  C23C16/511 ,  C23C16/515 ,  C23F4/00 ,  H01J37/32 ,  H01L21/203 ,  H01L21/205 ,  H01L21/302 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213 ,  H05H1/16

CPC分类号： H01J37/32706 ,  H01L21/31116 ,  H01L21/32137

摘要： A reactive gas supplied to a chamber 1 is put into plasma by supplying radio frequency power to the chamber 1 intermittently or while repeating high and low levels alternately and a specimen A in the chamber 1 is treated by the plasma. A positive pulse-like bias voltage synchronized with a period in which the radio frequency power is not supplied or a period in which low-level power is supplied is applied to the specimen A for preventing charging.

摘要翻译： 通过间歇地向腔室1提供射频功率或者交替地重复高低电平，并且通过等离子体处理腔室1中的样本A，将供给到腔室1的反应气体投入等离子体。 与未提供射频功率的时段同步的正脉冲状偏置电压或供给低电平电力的期间被施加到用于防止充电的检体A。

公开(公告)号：US5593539A

公开(公告)日：1997-01-14

申请号：US224960

申请日：1994-04-08

申请人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

发明人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

IPC分类号： H01J37/32 ,  B44C1/22

CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/32165

摘要： An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

摘要翻译： 公开了一种用于产生等离子体的装置。 该装置包括：等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差，使得等离子体中的每个电子以圆形路径移动。 通过利用形成在平行板电极之间的高频电场中的电子的振荡，旋转或摆线运动的现象，在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于LSI制造工艺中的蚀刻。

公开(公告)号：US5330606A

公开(公告)日：1994-07-19

申请号：US805864

申请日：1991-12-10

申请人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

发明人： Masafumi Kubota ,  Noboru Nomura ,  Tokuhiko Tamaki

IPC分类号： H01J37/32 ,  H01L21/00

CPC分类号： H01J37/32091 ,  H01J37/32155 ,  H01J37/32165

摘要： An apparatus for generating plasma is disclosed. The apparatus comprises: a plasma chamber; pairs of parallel plate electrodes; and a power supply for applying high-frequency powers on the pairs of electrodes. The frequencies of the high-frequency powers and the phase difference between the high-frequency powers are adjusted so as to cause each of electrons in the plasma to move in a circular path. A dense and highly uniform plasma is generated at a low pressure level, by utilizing the phenomenon of the oscillation, revolution or cycloidal motion of electrons in a high-frequency electric field formed between the parallel plate electrodes. This plasma is suitable for etching in the LSI fabrication process.

摘要翻译： 公开了一种用于产生等离子体的装置。 该装置包括：等离子体室; 成对平行板电极; 以及用于在所述电极对上施加高频功率的电源。 调整高频功率的频率和高频功率之间的相位差，使得等离子体中的每个电子以圆形路径移动。 通过利用在平行板电极之间形成的高频电场中的电子的振荡，旋转或摆线运动的现象，在低压水平下产生致密且高度均匀的等离子体。 该等离子体适用于在LSI制造工艺中的蚀刻。