公开(公告)号：US20100243607A1

公开(公告)日：2010-09-30

申请号：US12750015

申请日：2010-03-30

申请人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

发明人： Takeshi Ohse ,  Shinji Himori ,  Jun Abe ,  Norikazu Yamada

IPC分类号： C23F1/08 ,  C23F1/00

CPC分类号： H01J37/02 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A substrate processing method uses a substrate processing apparatus including a chamber for accommodating a substrate, a lower electrode to mount the substrate, a first RF power applying unit for applying an RF power for plasma generation into the chamber, and a second RF power applying unit for applying an RF power for bias to the lower electrode. The RF power for plasma generation is controlled to be intermittently changed by changing an output of the first RF power applying unit at a predetermined timing. If no plasma state or an afterglow state exists in the chamber by a control of the first RF power applying unit, an output of the second RF power applying unit is controlled to be in an OFF state or decreased below an output of the second RF power applying unit when the output of the first RF power applying unit is a set output.

摘要翻译： 基板处理方法使用基板处理装置，其包括用于容纳基板的室，用于安装基板的下电极，用于将用于等离子体产生的RF功率施加到室中的第一RF功率施加单元和第二RF功率施加单元 用于向下电极施加用于偏压的RF功率。 通过在预定的定时改变第一RF功率施加单元的输出来控制等离子体产生的RF功率间歇地改变。 如果通过第一RF功率施加单元的控制在腔室中不存在等离子体状态或余辉状态，则第二RF功率施加单元的输出被控制为处于OFF状态或降低到低于第二RF功率的输出 当第一RF功率施加单元的输出为设定输出时，施加单元。

公开(公告)号：US07622017B2

公开(公告)日：2009-11-24

申请号：US10856797

申请日：2004-06-01

申请人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

发明人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

IPC分类号： C23C16/509 ,  C23C16/52 ,  C23F1/00 ,  H01L21/306

CPC分类号： H01L21/6831 ,  H01J2237/2001 ,  H01L21/67069

摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。

公开(公告)号：US20090221151A1

公开(公告)日：2009-09-03

申请号：US12379052

申请日：2009-02-11

申请人： Masanobu Honda ,  Shinji Himori

发明人： Masanobu Honda ,  Shinji Himori

IPC分类号： H01L21/465 ,  C23F1/08

CPC分类号： H01J37/32009 ,  H01J37/32091 ,  H01J37/3244 ,  H01J37/32449 ,  H01J37/32541

摘要： The present invention provides an upper electrode used in an etching apparatus and the etching apparatus including the upper electrode, both of which can properly reduce intensity of electric field of plasma around a central portion of a substrate to be processed, thus enhancing in-plane uniformity of a plasma process. In this apparatus, a recess, serving as a space for allowing a dielectric to be injected therein, is provided around a central portion of the upper electrode. A dielectric supply passage configured for supplying the dielectric into the space and a dielectric discharge passage configured for discharging the dielectric from the space are connected with the space, respectively. With such configuration, the dielectric can be controllably supplied into the recess, such that in-plane distribution of the intensity of the electric field can be uniformed, corresponding to in-plane distribution of the intensity of the electric field of the plasma generated under various process conditions, such as a kind of each wafer that will be etched, each processing gas that will be used, and the like.

摘要翻译： 本发明提供了一种用于蚀刻装置的上电极和包括上电极的蚀刻装置，两者都可以适当地降低待加工基板的中心部分附近的等离子体的电场强度，从而提高面内均匀性 的等离子体工艺。 在该装置中，在上部电极的中心部分的周围设置用作容纳电介质的空间的凹部。 电介质供给通路被配置为将电介质供应到空间中，并且介质排出通道被配置为用于从空间排出电介质。 通过这样的结构，电介质可以可控地供给到凹部中，使得电场强度的面内分布可以均匀化，对应于各种不同的等离子体产生的等离子体的电场强度的面内分布 工艺条件，例如将被蚀刻的每种晶片的种类，将被使用的每种处理气体等。

公开(公告)号：US07112926B2

公开(公告)日：2006-09-26

申请号：US10120526

申请日：2002-04-12

申请人： Shinji Himori ,  Mitsuhiro Yuasa ,  Kazuyoshi Watanabe ,  Jun'ichi Shimada

发明人： Shinji Himori ,  Mitsuhiro Yuasa ,  Kazuyoshi Watanabe ,  Jun'ichi Shimada

IPC分类号： H05H1/24

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32183 ,  H05H1/46

摘要： There are provided a matching unit capable of sufficiently matching the impedance of a high frequency load to a transmission path impedance without increasing its size and matching time even if a high frequency power of 70 MHz or higher is supplied thereto, and a plasma processing system using the same. A matching unit 41 comprises: a resonance rod 61 for transmitting a high frequency energy from a high frequency power supply 40 to a plasma producing electrode; a variable capacitor 62, connected to the resonance rod 61 and an electrode 21 in series, for adjusting the imaginary part of an impedance complex number; a housing 63 which is provided outside of the resonance rod 61 and which is grounded; a link coil 64 for exciting a high frequency energy to the resonance rod 61 and for adjusting the real part of the impedance complex number; and a controller 69 for controlling a driving part for the variable capacitor 62 and the link coil 64 so that a series resonance circuit is formed between the high frequency power supply 40 and the ground via plasma in a matching state.

摘要翻译： 提供了一种能够将高频负载的阻抗充分地匹配到传输路径阻抗而不增加其尺寸和匹配时间的匹配单元，即使提供70MHz或更高的高频功率，以及使用等离子体处理系统 一样。 匹配单元41包括：用于将高频能量从高频电源40传输到等离子体产生电极的共振杆61; 连接到共振杆61的可变电容器62和串联的电极21，用于调节阻抗复数的虚部; 壳体63，其设置在共振杆61的外部并接地; 用于激励共振杆61的高频能量并用于调整阻抗复数的实部的链路线圈64; 以及用于控制可变电容器62和链接线圈64的驱动部分的控制器69，使得在匹配状态下通过等离子体在高频电源40和接地之间形成串联谐振电路。

公开(公告)号：US20050011456A1

公开(公告)日：2005-01-20

申请号：US10856797

申请日：2004-06-01

申请人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

发明人： Shinji Himori ,  Shosuke Endoh ,  Kazuya Nagaseki ,  Tomoya Kubota ,  Daisuke Hayashi

IPC分类号： C23C16/00 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/683

CPC分类号： H01L21/6831 ,  H01J2237/2001 ,  H01L21/67069

摘要： A processing apparatus for performing a process on a surface of an object to be processed by applying a high frequency power to an electrode installed in an airtight processing chamber to convert a processing gas introduced therein into a plasma, includes a thermal transfer gas feed pathway for supplying a thermal transfer gas for controlling a temperature of the object to be processed to a minute space between the object to be processed and a holding unit installed on the electrode for attracting and holding the object to be processed through an inner portion of an insulating member disposed under the electrode. A portion of the thermal transfer gas feed pathway, which passes through the inner portion of the insulating member, is formed in a zigzag shape or a spiral shape with respect to a normal direction of a holding surface of the holding unit.

摘要翻译： 一种处理装置，用于通过向安装在气密处理室中的电极施加高频功率以将其中引入的等离子体中的处理气体转换为对等待处理对象的表面进行处理，所述处理装置包括：热传递气体供给路径， 将待传送物体的温度控制在被处理体的微小空间和安装在电极上的保持单元之间的热转印气体，用于通过绝缘构件的内部吸引并保持待处理物体 设置在电极下方。 通过绝缘构件的内部的热传递气体供给路径的一部分相对于保持单元的保持面的法线方向形成Z字形或螺旋状。

公开(公告)号：US20100072172A1

公开(公告)日：2010-03-25

申请号：US12562137

申请日：2009-09-18

申请人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

发明人： Akio Ui ,  Hisataka Hayashi ,  Takeshi Kaminatsui ,  Shinji Himori ,  Norikazu Yamada ,  Takeshi Ohse ,  Jun Abe

IPC分类号： H01L21/3065 ,  C23F1/02

CPC分类号： H01L21/67069 ,  H01J37/32009 ,  H01J37/32027 ,  H01J37/32045 ,  H01J37/32091 ,  H01J37/321 ,  H01J37/32137 ,  H01J37/32532 ,  H01J2237/3341 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136 ,  H01L21/67253 ,  H01L22/14 ,  H01L22/26

摘要： There are provided a substrate processing apparatus and a substrate processing method realizing an effective reduction of a voltage change of a substrate on an electrode to reduce the variation of incident energy of ions entering the substrate. The substrate processing apparatus includes: a first electrode holding a substrate on a main surface of the first electrode; a second electrode facing the first electrode; a RF power source applying to the first electrode a RF voltage whose frequency is equal to or higher than 40 MHz; and a pulse voltage applying unit applying to the first electrode a pulse voltage decreasing in accordance with a lapse of time, by superimposing the pulse voltage on the RF voltage.

摘要翻译： 提供了一种基板处理装置和基板处理方法，其实现有效地降低电极上的基板的电压变化，以减少进入基板的离子的入射能量的变化。 基板处理装置包括：第一电极，其在第一电极的主表面上保持基板; 面对所述第一电极的第二电极; RF电源，其向所述第一电极施加频率等于或高于40MHz的RF电压; 以及脉冲电压施加单元，通过将所述脉冲电压叠加在所述RF电压上，向所述第一电极施加按照经过的时间降低的脉冲电压。

公开(公告)号：US20090047795A1

公开(公告)日：2009-02-19

申请号：US12192388

申请日：2008-08-15

申请人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

发明人： Tatsuo MATSUDO ,  Shinji Himori ,  Noriaki Imai ,  Takeshi Ohse ,  Jun Abe ,  Takayuki Katsunuma

IPC分类号： H01L21/306 ,  H01L21/3065 ,  H01L21/31

CPC分类号： H01L21/3065 ,  H01J37/32091 ,  H01J37/32146 ,  H01J37/32165

摘要： A plasma processing apparatus includes a first radio frequency (RF) power supply unit for applying a first RF power for generating a plasma from a processing gas to at least one of a first and a second electrode which are disposed facing each other in an evacuable processing chamber. The first RF power supply unit is controlled by a control unit so that a first phase at which the first RF power has a first amplitude for generating a plasma and a second phase at which the first RF power has a second amplitude for generating substantially no plasma are alternately repeated at predetermined intervals.

摘要翻译： 一种等离子体处理装置包括：第一射频（RF）电源单元，用于将第一和第二电极中的至少一个施加于处理气体中产生等离子体，所述第一和第二电极在排气处理中相互面对地设置; 房间。 所述第一RF电源单元由控制单元控制，使得所述第一RF功率具有用于产生等离子体的第一幅度的第一相位和所述第一RF功率具有第二幅度以用于基本上不产生等离子体的第二相位 以预定间隔交替重复。

公开(公告)号：US20050211383A1

公开(公告)日：2005-09-29

申请号：US10525240

申请日：2003-08-21

申请人： Koji Miyata ,  Kazuyuki Tezuka ,  Koichi Tateshita ,  Hiroo Ono ,  Kazuya Nagaseki ,  Shinji Himori

发明人： Koji Miyata ,  Kazuyuki Tezuka ,  Koichi Tateshita ,  Hiroo Ono ,  Kazuya Nagaseki ,  Shinji Himori

IPC分类号： C23F1/00 ,  H01J37/32 ,  H01L21/00 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31116 ,  H01J37/32623 ,  H01J37/3266 ,  H01J37/32688 ,  H01L21/31138 ,  H01L21/32137 ,  H01L21/67069

摘要： Disclosed is a magnetic field generator for magnetron plasma. The magnetic field generator is provided with a plurality of magnetic segments, and generates a predetermined multi-pole magnetic field around the periphery of a workpiece substrate within a process chamber. The strength of the multi-pole magnetic field is controlled so that the state of the multi-pole magnetic field is matched different plasma processes. Further, the pattern of the multi-pole magnetic field can be changed so as to match different sizes of the substrate.

摘要翻译： 公开了一种用于磁控管等离子体的磁场发生器。 磁场发生器设置有多个磁段，并且在处理室内的工件衬底的周边周围产生预定的多极磁场。 控制多极磁场的强度，使得多极磁场的状态与不同的等离子体处理相匹配。 此外，可以改变多极磁场的图案，以便匹配基板的不同尺寸。

公开(公告)号：US10147633B2

公开(公告)日：2018-12-04

申请号：US13611327

申请日：2012-09-12

申请人： Shinji Himori ,  Takehiro Kato ,  Etsuji Ito

发明人： Shinji Himori ,  Takehiro Kato ,  Etsuji Ito

IPC分类号： B65G43/00 ,  B65G47/90 ,  H01L21/677 ,  H01L21/687

摘要： A transfer apparatus transfers an object to be transferred onto a case. The transfer apparatus includes a transfer arm, an arm shaft, a plurality of electromagnets, and a control unit. The transfer arm has a pick unit on a front end thereof and extends and retracts in a horizontal direction. The object to be transferred is held on the pick unit. The arm shaft supports the transfer arm. The plurality of electromagnets apply an force in upward direction to the transfer arm by generating a magnetic field in the case. The control unit controls the plurality of electromagnets in such a manner that when the transfer arm extends and retracts in the horizontal direction, the force in upward direction applied to the transfer arm increases as a length from the arm shaft to the front end of the transfer arm increases.

公开(公告)号：US09859146B2

公开(公告)日：2018-01-02

申请号：US14238860

申请日：2012-08-13

申请人： Shinji Himori ,  Yoshiyuki Kobayashi ,  Takehiro Kato ,  Etsuji Ito

发明人： Shinji Himori ,  Yoshiyuki Kobayashi ,  Takehiro Kato ,  Etsuji Ito

IPC分类号： H01L21/00 ,  H01L21/687 ,  H01L21/306 ,  H01L21/67

CPC分类号： H01L21/68742 ,  H01L21/30604 ,  H01L21/67063

摘要： A semiconductor manufacturing device includes a stage, a plurality of pins, and a driving unit. The stage includes a mounting surface. The mounting surface has a first region for mounting thereon a substrate, and a second region for mounting thereon a focus ring. The second region is provided to surround the first region. A plurality of holes is formed in the stage. The holes extend in a direction that intersects the mounting surface while passing through the boundary between the first region and the second region. The pins are provided in the respective holes. Each of the pins has a first and a second upper end surface. The second upper end surface is provided above the first upper end surface, and is offset towards the first region with respect to the first upper end surface. The driving unit moves the pins up and down in the aforementioned direction.