公开(公告)号：US20140312444A1

公开(公告)日：2014-10-23

申请号：US14317881

申请日：2014-06-27

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H01L27/146

CPC classification number: H01L27/14605 ,  H01L27/14601 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/1461 ,  H01L27/14621 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14641 ,  H01L27/14643 ,  H01L27/14645 ,  H01L27/14689 ,  H01L31/035272 ,  H04N5/335 ,  H04N5/357 ,  H04N5/3575 ,  H04N5/3696 ,  H04N5/37455 ,  H04N5/37457 ,  H04N5/378 ,  H04N9/045

Abstract: A solid-state imaging device in which a pixel circuit formed on the first surface side of a semiconductor substrate is shared by a plurality of light reception regions and second surface side of the semiconductor substrate is the light incident side of the light reception regions. The second surface side regions of the light reception regions are arranged at approximately even intervals and the first surface side regions of the light reception regions e are arranged at uneven intervals. Respective second surface side regions and first surface side regions are joined in the semiconductor substrate so that the light reception regions extend from the second surface side to the first surface side of the semiconductor substrate.

公开(公告)号：US20140183604A1

公开(公告)日：2014-07-03

申请号：US14197967

申请日：2014-03-05

Applicant: Sony Corporation

Inventor： Keiji Mabuchi

IPC: H01L27/148

CPC classification number: H01L27/14638 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/14643 ,  H01L27/14806 ,  H04N5/363 ,  H04N5/37452 ,  H04N5/37457

Abstract: A solid-state imaging device including a pixel region in which a plurality of pixels are arranged. The pixels each includes a photoelectric conversion section, a transfer transistor, a plurality of floating diffusion sections receiving a charge from the photoelectric conversion section through the transfer transistor, a reset transistor resetting the floating diffusion sections, a separating transistor performing on-off control of a connection between the plurality of floating diffusion sections, and an amplifying transistor outputting a signal corresponding to a potential of the floating diffusion sections.

Abstract translation: 一种固态成像装置，包括其中排列有多个像素的像素区域。 像素各自包括光电转换部，转移晶体管，通过转移晶体管接收来自光电转换部的电荷的多个浮动扩散部，复位浮置扩散部的复位晶体管，进行开关控制的分离晶体管 多个浮动扩散部之间的连接，以及输出对应于浮动扩散部的电位的信号的放大晶体管。

公开(公告)号：US20140043514A1

公开(公告)日：2014-02-13

申请号：US14054207

申请日：2013-10-15

Applicant: Sony Corporation

Inventor： Hiroki Sato ,  Keiji Mabuchi ,  Nobuo Nakamura ,  Tetsuya Iizuka

IPC: H04N5/335

CPC classification number: H04N5/335

Abstract: The device includes an pixel array part having a plurality of unit pixels, a CDS (correlated double sampling) circuit, and an A/D converter. A pixel signal read from a pixel array part via a signal line is subjected to CDS processing (noise elimination processing) in the CDS circuit, and then this pixel signal is inputted into the A/D converter which performs A/D conversion on the pixel signal. The A/D converter includes a ΔΣ modulator and a digital filter to perform highly accurate A/D conversion. The invention can also be applied to a construction in which an A/D converter is provided at the front stage of the CDS circuit.

Abstract translation: 该装置包括具有多个单位像素的像素阵列部分，CDS（相关双采样）电路和A / D转换器。 经由信号线从像素阵列部分读取的像素信号在CDS电路中进行CDS处理（噪声消除处理），然后将该像素信号输入到对像素进行A / D转换的A / D转换器 信号。 A / D转换器包括DeltaSigma调制器和数字滤波器，以执行高精度的A / D转换。 本发明也可以应用于在CDS电路的前级设置A / D转换器的结构。

公开(公告)号：US08623691B2

公开(公告)日：2014-01-07

申请号：US13711215

申请日：2012-12-11

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H01L29/00

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

Abstract translation: 形成背照式CMOS图像传感器包括在形成有源区或栅电极期间在硅衬底的布线侧上形成配准标记的工艺。 使用活性区域的硅化物膜也可以用于配准标记。 此后，通过使用红光或近红外线从背面读取对准标记，并且完成步进机的配准。 也可以在背面（照射侧）的氧化硅膜上形成配准标记，与配线侧的配准标记对准，并且通过使用由此形成的配准标记来实现期望的配准。

公开(公告)号：US20130264619A1

公开(公告)日：2013-10-10

申请号：US13907111

申请日：2013-05-31

Applicant: SONY CORPORATION

Inventor： Keiji Mabuchi

IPC: H01L27/146 ,  H01L31/18

CPC classification number: H01L27/14812 ,  H01L27/146 ,  H01L27/14609 ,  H01L27/1463 ,  H01L27/14643 ,  H01L27/14689 ,  H01L31/18

Abstract: A solid-state imaging device includes a semiconductor substrate; a first conductive region of the semiconductor substrate; a first conductive region on an upper surface side of the first conductive region of the semiconductor substrate; a second conductive region below the first conductive region on the upper surface side of the first conductive region of the semiconductor substrate. The solid-state imaging device further includes a photoelectric conversion region including the first conductive region located on the upper surface side of the first conductive region of the semiconductor substrate and the second conductive region and a transfer transistor transferring charges accumulated in the photoelectric conversion region to a readout region; and a pixel including the photoelectric conversion region and the transfer transistor. The first conductive region, which is included in the photoelectric conversion region, extends to the lower side of a sidewall of a gate electrode of the transfer transistor.

Abstract translation: 固体摄像器件包括半导体衬底; 半导体衬底的第一导电区域; 在所述半导体衬底的所述第一导电区域的上表面侧上的第一导电区域; 在半导体衬底的第一导电区域的上表面侧上的第一导电区域下方的第二导电区域。 固态成像装置还包括光电转换区域，该光电转换区域包括位于半导体衬底的第一导电区域和第二导电区域的上表面侧上的第一导电区域和将在光电转换区域中累积的电荷转移到 读出区域; 以及包括光电转换区域和转移晶体管的像素。 包括在光电转换区域中的第一导电区域延伸到转移晶体管的栅电极的侧壁的下侧。

公开(公告)号：US20130171760A1

公开(公告)日：2013-07-04

申请号：US13711215

申请日：2012-12-11

Applicant: Sony Corporation

Inventor： Takashi Abe ,  Nobuo Nakamura ,  Keiji Mabuchi ,  Tomoyuki Umeda ,  Hiroaki Fujita ,  Eiichi Funatsu ,  Hiroki Sato

IPC: H01L31/0232

CPC classification number: H01L27/14643 ,  H01L23/544 ,  H01L27/14603 ,  H01L27/14607 ,  H01L27/14609 ,  H01L27/14612 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14625 ,  H01L27/14627 ,  H01L27/1463 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14683 ,  H01L27/14685 ,  H01L27/14687 ,  H01L31/02162 ,  H01L31/0232 ,  H01L31/02327 ,  H01L2223/54426 ,  H01L2223/54453 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Forming a back-illuminated type CMOS image sensor, includes process for formation of a registration mark on the wiring side of a silicon substrate during formation of an active region or a gate electrode. A silicide film using an active region may also be used for the registration mark. Thereafter, the registration mark is read from the back-side by use of red light or near infrared rays, and registration of the stepper is accomplished. It is also possible to form a registration mark in a silicon oxide film on the back-side (illuminated side) in registry with the registration mark on the wiring side, and to achieve the desired registration by use of the registration mark thus formed.

公开(公告)号：US11489001B2

公开(公告)日：2022-11-01

申请号：US16932544

申请日：2020-07-17

Applicant: Sony Corporation

Inventor： Taiichiro Watanabe ,  Akihiro Yamada ,  Hideo Kido ,  Hiromasa Saito ,  Keiji Mabuchi ,  Yuko Ohgishi

IPC: H01L27/148 ,  H01L27/146

Abstract: A solid-state imaging device includes: plural photodiodes formed in different depths in a unit pixel area of a substrate; and plural vertical transistors formed in the depth direction from one face side of the substrate so that gate portions for reading signal charges obtained by photoelectric conversion in the plural photodiodes are formed in depths corresponding to the respective photodiodes.

公开(公告)号：US11482565B2

公开(公告)日：2022-10-25

申请号：US17065987

申请日：2020-10-08

Applicant: Sony Corporation

Inventor： Takeshi Yanagita ,  Keiji Mabuchi

IPC: H01L27/146

Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.

公开(公告)号：US20210028205A1

公开(公告)日：2021-01-28

申请号：US17065987

申请日：2020-10-08

Applicant: Sony Corporation

Inventor： Takeshi Yanagita ,  Keiji Mabuchi

IPC: H01L27/146

Abstract: A solid-state imaging device and method of making a solid-state imaging device are described herein. By way of example, the solid-state imaging device includes a first wiring layer formed on a sensor substrate and a second wiring layer formed on a circuit substrate. The sensor substrate is coupled to the circuit substrate, the first wiring layer and the second wiring layer being positioned between the sensor substrate and the circuit substrate. A first electrode is formed on a surface of the first wiring layer, and a second electrode is formed on a surface of the second wiring layer. The first electrode is in electrical contact with the second electrode.

公开(公告)号：US10694135B2

公开(公告)日：2020-06-23

申请号：US16521368

申请日：2019-07-24

Applicant: SONY CORPORATION

Inventor： Keiji Mabuchi

IPC: H04N3/14 ,  H04N5/335 ,  H04N5/3745 ,  H04N5/374 ,  H04N5/369 ,  H04N5/376 ,  H04N5/378 ,  H04N5/63

Abstract: An imaging device includes a pixel region in which light sensing pixels are grouped into pixel-units that each include multiple pixels, each column including pixels from at least two of the pixel-units. Each of the pixel-units is connected, via a corresponding readout line, to a corresponding readout unit configured to perform analog-to-digital conversion on pixel signals output thereto. A scanning unit that extends in a column direction is configured to select pixels for readout by applying row scanning pulses to scan lines connected to rows. A scanning unit that extends in a row direction for applying readout-enabling scan pulses to lines connected to columns is omitted. Those pixels that are selected for readout by one of the row scanning pulses are read out independently of any enabling pulses applied to lines connected to columns.