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    Optical transmission substrate, method for manufacturing optical transmission substrate and optoelectronic integrated circuit
    31.
    发明授权
    Optical transmission substrate, method for manufacturing optical transmission substrate and optoelectronic integrated circuit 有权
    光传输基板，光传输基板和光电集成电路的制造方法

    公开(公告)号：US07421858B2

    公开(公告)日：2008-09-09

    申请号：US11679460

    申请日：2007-02-27

    申请人： Tadashi Fukuzawa ,  Masaki Hasegawa

    发明人： Tadashi Fukuzawa ,  Masaki Hasegawa

    IPC分类号： C03B37/032 ,  C03B37/022 ,  C03B37/01 ,  G02B6/12 ,  G02B6/26 ,  G02B6/42 ,  G02B6/10

    CPC分类号： G02B6/30 ,  G02B6/125 ,  G02B6/4214 ,  G02B6/43 ,  G02B2006/12104 ,  H05K1/0274 ,  H05K1/144

    摘要： Provided is an optical transmission substrate including: a first substrate; an optical waveguide which has clad covering a core and a periphery of the core and extends on an upper surface of the first substrate; a second substrate provided parallel to the first substrate so that a lower surface thereof contacts an upper surface of the optical waveguide; a reflection surface which is provided on a cross section of the core at an end of the optical waveguide and reflects light, which travels through the core of the optical waveguide, toward the second substrate; and a light guide which is provided in the second substrate and guides the light, which is reflected toward the second substrate, toward an upper surface of the second substrate from a position closer to the core than an upper surface of the clad.

    摘要翻译： 提供一种光传输基板，包括：第一基板; 光波导，其具有包覆芯和芯的周边并且在第一基板的上表面上延伸的光导体; 第二基板，其平行于第一基板设置，使得其下表面接触光波导的上表面; 在所述光波导的端部设置在所述芯的截面上并反射穿过所述光波导的芯的光朝向所述第二基板的反射面; 以及导光体，其设置在所述第二基板中，并且从所述包层的上表面的距离更靠近所述芯的位置将从所述第二基板反射的光导向所述第二基板的上表面。

    Energy-efficient full-color liquid crystal display
    33.
    发明授权
    Energy-efficient full-color liquid crystal display 失效
    节能全彩液晶显示屏

    公开(公告)号：US06295106B1

    公开(公告)日：2001-09-25

    申请号：US09482151

    申请日：2000-01-12

    申请人： Tadashi Fukuzawa ,  Sayuri Kohara ,  Victor Yee Way Lee ,  Robert D. Miller ,  John Campbell Scott ,  Sally A. Swanson

    发明人： Tadashi Fukuzawa ,  Sayuri Kohara ,  Victor Yee Way Lee ,  Robert D. Miller ,  John Campbell Scott ,  Sally A. Swanson

    IPC分类号： G02F11335

    CPC分类号： G02F1/133617 ,  C09B69/101 ,  C09B69/102 ,  G02F1/133603 ,  G02F1/13362 ,  G02F1/133621 ,  G02F2001/133614

    摘要： Novel liquid crystal display (LCD) structures for full-color liquid crystal displays using photoluminescent (PL) fibers. The new architectures simplify the LCD fabrication process by replacing complicated, time consuming photolithography steps for color filter fabrication to a low-cost, high-throughput fiber spinning technology. The new LCD architecture implementing the approach has a higher power efficiency than conventional LCDs. Three structures of LCD devices utilizing photoluminescent (PL) fiber arrays includes: a first structure having PL fiber arrays situated behind the LC shutter (relative to viewers); a second structure having PL fiber arrays situated on top of the LC shutter; and a third structure where the PL fiber arrays are located outside the LC cell. In one of these structures, the fibers not only photoluminesce, but also polarize incident light thus reducing LCD fabrication cost.

    摘要翻译： 使用光致发光（PL）光纤的全色液晶显示器的新型液晶显示器（LCD）结构。 新架构简化了LCD制造工艺，将复杂，耗时的彩色滤光片制作步骤替代为低成本，高通量的纤维纺丝技术。 实现该方法的新型LCD架构具有比传统LCD更高的功率效率。 利用光致发光（PL）光纤阵列的三种LCD装置结构包括：具有位于LC快门（相对于观看者）后面的PL光纤阵列的第一结构; 具有位于所述LC快门顶部的PL光纤阵列的第二结构; 以及其中PL光纤阵列位于LC单元外部的第三结构。 在这些结构之一中，光纤不仅光致发光，而且使入射光偏振，从而降低LCD制造成本。

    Flare-prevention optical system, flare-prevention method, and flying height tester
    34.
    发明授权
    Flare-prevention optical system, flare-prevention method, and flying height tester 失效
    防火光学系统，防火方法和飞行高度测试仪

    公开(公告)号：US5638207A

    公开(公告)日：1997-06-10

    申请号：US516468

    申请日：1995-08-17

    申请人： Tadashi Fukuzawa ,  Teiji Hisano ,  Yasuji Ozawa ,  Yasuyuki Takahashi ,  Hiroshi Watabe

    发明人： Tadashi Fukuzawa ,  Teiji Hisano ,  Yasuji Ozawa ,  Yasuyuki Takahashi ,  Hiroshi Watabe

    IPC分类号： G11B5/455 ,  G01B11/14 ,  G02B27/00 ,  G02B27/28 ,  G11B5/60 ,  G11B33/10 ,  G02B21/20 ,  G01J4/00 ,  G02B5/30 ,  G11B13/04

    CPC分类号： G11B5/6005 ,  G02B27/0018 ,  G02B27/28 ,  G11B33/10

    摘要： An optical system is provided in which flare is prevented and, when the light reflected from a reflection component is modulated by a photoelastic phenomenon, the effect of the modulation on the measurement of the intensity of the reflected light can be eliminated, and, further, a flying height tester for a magnetic head is provided using such optical system. A multilambda plate is provided in the flare-prevention optical system for allowing the light reaching a reflection component and the light reflected from the reflection component to pass, and for allowing the phase difference between the ordinary ray and the extraordinary ray to vary by 2.pi. or more depending on the wavelength of light. Since the light passed through the multilambda plate only varies in the peak position and the peak height varies little even if the light has experienced modulation, no error occurs in the spectrum intensity of the light. A depolarizer may be substituted for the multilambda plate.

    摘要翻译： 提供了一种光学系统，其中防止闪光，并且当通过光弹现象调制从反射分量反射的光时，可以消除调制对反射光强度的测量的影响，此外， 使用这种光学系统提供用于磁头的飞行高度测试仪。 在防火光学系统中设置有多射极板，用于允许光到达反射分量，并且从反射分量反射的光通过，并且为了允许普通光线和非凡光线之间的相位差变化2π 或更多取决于光的波长。 由于通过多谱板的光仅在峰值位置变化，并且峰值高度变化很小，即使光经过调制，光的光谱强度也不会发生错误。 去极化器可以代替多极板。

    Fabrication method for quantum devices in compound semiconductor layers
    35.
    发明授权
    Fabrication method for quantum devices in compound semiconductor layers 失效
    化合物半导体层中量子器件的制造方法

    公开(公告)号：US5281543A

    公开(公告)日：1994-01-25

    申请号：US912939

    申请日：1992-07-13

    申请人： Tadashi Fukuzawa ,  Hiro Munekata

    发明人： Tadashi Fukuzawa ,  Hiro Munekata

    IPC分类号： H01L29/06 ,  H01L21/18 ,  H01L21/265 ,  H01L21/335 ,  H01L21/337 ,  H01L21/338 ,  H01L25/065 ,  H01L29/80 ,  H01L29/812

    CPC分类号： B82Y10/00 ,  H01L21/182 ,  H01L21/2654 ,  H01L25/0657 ,  H01L29/66469 ,  H01L29/66924 ,  H01L2225/06541 ,  H01L2924/0002 ,  Y10S438/962

    摘要： Disclosed is a new method suitable for making highly integrated quantum wire arrays, quantum dot arrays in a single crystal compound semiconductor and FETs of less than 0.1 micron gate length. This makes it possible to construct a high-performance electronic device with high speed and low power consumption, using a combination of low-temperature-growth molecular beam epitaxy (LTG-MBE) and focused ion beam (FIB) implantation. The compound semiconductor (GaAs) epitaxial layers, which are made by LTG-MBE, are used as targets of Ga FIB implantation to make Ga wire or dot arrays. Precipitation of arsenic microcrystals, which are initially embedded in a single crystal GaAs layer and act as Schottky barriers, are typically observed in an LTG GaAs layer. A thermal annealing process, after implantation, changes the arsenic microcrystals to GaAs crystals if the arsenic microcrystals are in the region in which the Ga ions are implanted. A wire-like shape free of As microcrystals then acts as a quantum wire for electrons or holes whereas a dot-like shape free of As microcrystals acts as a quantum dot. The co-existence of Ga ions and dopant ions, which provides conductivity type carriers opposite to the conductivity type of the majority carriers of a channel region of an FET, provides the fabrication of very narrow junction gate region for any FET.

    摘要翻译： 公开了适用于制造高度集成的量子线阵列，单晶化合物半导体中的量子点阵列和小于0.1微米栅极长度的FET的新方法。 这使得可以使用低温生长分子束外延（LTG-MBE）和聚焦离子束（FIB）植入的组合来构建具有高速度和低功耗的高性能电子器件。 将由LTG-MBE制成的化合物半导体（GaAs）外延层用作Ga FIB注入的靶，以制造Ga线或点阵列。 通常在LTG GaAs层中观察到最初嵌入单晶GaAs层中并作为肖特基势垒的砷微晶的析出。 如果砷微晶处于植入Ga离子的区域，则在植入后的热退火工艺将砷微晶变为GaAs晶体。 没有As微晶的线状形状作为电子或空穴的量子线，而没有As微晶的点状形状作为量子点。 提供与FET的沟道区域的多数载流子的导电类型相反的导电型载流子的Ga离子和掺杂离子的共存提供了用于任何FET的非常窄的结栅极区域的制造。

    Semiconductor device
    37.
    发明授权
    Semiconductor device 失效
    半导体器件

    公开(公告)号：US5001536A

    公开(公告)日：1991-03-19

    申请号：US298764

    申请日：1989-01-17

    申请人： Tadashi Fukuzawa ,  Michiharu Nakamura ,  Eizaburo Yamada

    发明人： Tadashi Fukuzawa ,  Michiharu Nakamura ,  Eizaburo Yamada

    IPC分类号： H01L27/06 ,  H01L29/267 ,  H01L29/51 ,  H01L29/778

    CPC分类号： H01L29/517 ,  H01L27/0605 ,  H01L29/267 ,  H01L29/7783 ,  H01L29/7787

    摘要： In a semiconductor device having, at least, a first semiconductor layer which contains substantially no impurity, a second semiconductor layer which has a band gap greater than that of the first semiconductor layer and which contains an impurity, an interface between the first and second semiconductor layers forming a heterojunction, at least one pair of electrodes which are electronically connected with the first semiconductor layer, and means to control carriers developing at the heterojunction interface; a semiconductor device characterized in that the first semiconductor layer is a Ge layer, while the second semiconductor layer is a group III-V compound semiconductor layer.

    摘要翻译： 在具有至少包含基本上不含杂质的第一半导体层的半导体器件中，具有大于第一半导体层的带隙的第二半导体层并且含有杂质的第二半导体层在第一和第二半导体之间的界面 形成异质结的层，与第一半导体层电子连接的至少一对电极，以及控制在异质结界面处显影的载体的装置; 其特征在于，所述第一半导体层为Ge层，所述第二半导体层为III-V族化合物半导体层。

    Semiconductor laser having quantum well active region doped with impurities
    39.
    发明授权
    Semiconductor laser having quantum well active region doped with impurities 失效
    具有掺杂有杂质的量子阱活性区的半导体激光器

    公开(公告)号：US4881238A

    公开(公告)日：1989-11-14

    申请号：US888073

    申请日：1986-07-22

    申请人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura

    发明人： Naoki Chinone ,  Kazuhisa Uomi ,  Tadashi Fukuzawa ,  Hideaki Matsueda ,  Takashi Kajimura

    IPC分类号： H01S5/227 ,  H01S5/30 ,  H01S5/34

    CPC分类号： B82Y20/00 ,  H01S5/34 ,  H01S5/2275 ,  H01S5/3086 ,  H01S5/309 ,  H01S5/3407

    摘要： In a well-known semiconductor laser, a multiple quantum well type active layer consisting of barrier layers and active layers or well layers, each of which has a thickness less than the de Broglie wavelength of electrons, is doped with an impurity, and the impurity density is made higher in the barrier layer than in the well layer. Further, in a case where the multiple quantum well active layer is held between p-type and n-type cladding layers, the well layer is undoped, the part of the barrier layer lying in contact with the well layer is undoped, and the other part of the barrier layer close to the p-type cladding layer is put into the n-conductivity type while that of the barrier layer close to the n-type cladding layer is put into the p-conductivity type.

    摘要翻译： 在众所周知的半导体激光器中，掺杂有杂质的由势垒层和活性层或阱层构成的多量子阱型有源层的厚度小于电子的德布罗意波长， 在阻挡层中的密度比井层中的密度高。 此外，在多量子阱活性层保持在p型和n型覆层之间的情况下，阱层未掺杂，阻挡层与阱层接触的部分未掺杂，另一方面 靠近p型覆层的阻挡层的一部分被放入n导电型，而靠近n型包覆层的阻挡层的部分被放入p导电型。

    Semiconductor laser device and method of fabricating the same
    40.
    发明授权
    Semiconductor laser device and method of fabricating the same 失效
    半导体激光器件及其制造方法

    公开(公告)号：US4827483A

    公开(公告)日：1989-05-02

    申请号：US895386

    申请日：1986-08-11

    申请人： Tadashi Fukuzawa ,  Naoki Chinone ,  Shin'ichi Nakatsuka ,  Katsutoshi Saito ,  Takashi Kajimura ,  Yuuichi Ono

    发明人： Tadashi Fukuzawa ,  Naoki Chinone ,  Shin'ichi Nakatsuka ,  Katsutoshi Saito ,  Takashi Kajimura ,  Yuuichi Ono

    IPC分类号： H01S5/10 ,  H01S5/16 ,  H01S5/20 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/16 ,  H01S5/20 ,  H01S5/34 ,  H01S5/1064 ,  H01S5/2059 ,  H01S5/2063 ,  H01S5/3432

    摘要： A semiconductor laser device including at least one of a laser active layer formed of a super lattice and an optical guide layer formed of another super lattice is disclosed in which part of at least one of the super lattices is converted into a mixed crystal by the impurity induced disordering based upon one of impurity diffusion and impurity ion implantation, to divide the super lattice into a first region formed of the mixed crystal and a second region having the super lattice structure, the width of the second region in directions perpendicular to the lengthwise direction of a laser cavity varies along the above lengthwise direction, and the width of a laser excitation region is smaller than the mean value of the width of the second region, to generate laser oscillation having a single transverse mode and a multi longitudinal mode. Thus, the semiconductor laser device emits a laser beam which is small in astigmatism and low in optical feedback noise.

    摘要翻译： 公开了一种包括由超晶格形成的激光有源层和由另一超晶格形成的光导层中的至少一个的半导体激光器件，其中至少一个超晶格的部分通过杂质转化为混晶 基于杂质扩散和杂质离子注入之一引起的无序化，将超晶格分成由混晶构成的第一区域和具有超晶格结构的第二区域，第二区域的宽度与垂直于长度方向的方向 激光腔沿上述长度方向变化，并且激光激发区域的宽度小于第二区域的宽度的平均值，以产生具有单一横向模式和多纵向模式的激光振荡。 因此，半导体激光装置发射像散小且光反馈噪声低的激光束。