公开(公告)号：US20090033377A1

公开(公告)日：2009-02-05

申请号：US12170472

申请日：2008-07-10

申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Masaki Shiraishi

IPC分类号： H03K3/012

CPC分类号： H02M3/07 ,  H02M1/08 ,  H02M7/5387 ,  H02M2003/071

摘要： A drive circuit for driving a semiconductor element is equipped with: a first switch connected to a positive side of a DC power supply; a second switch connected to the other terminal of the first switch and to a negative side of the DC power supply; a third switch connected to the positive side of the DC power supply; a fourth switch connected to the other terminal of the third switch; a fifth switch connected to the other terminal of the fourth switch and to the negative side of the DC power supply; and a capacitor connected to the other terminal of the first switch and to the other terminal of the fourth switch. A gate of the semiconductor element is connected to the other terminal of said third switch; and a source of the semiconductor element is connected to the negative side of the DC power supply.

摘要翻译： 用于驱动半导体元件的驱动电路配备有：连接到直流电源的正侧的第一开关; 连接到第一开关的另一个端子和直流电源的负极的第二开关; 连接到直流电源的正极的第三开关; 连接到第三开关的另一个端子的第四开关; 连接到第四开关的另一个端子和直流电源的负极的第五开关; 以及电容器，连接到第一开关的另一端子和第四开关的另一端子。 半导体元件的栅极连接到所述第三开关的另一个端子; 并且半导体元件的源极连接到直流电源的负极侧。

公开(公告)号：US06327457B1

公开(公告)日：2001-12-04

申请号：US09549144

申请日：2000-04-13

申请人： Takayuki Hashimoto

发明人： Takayuki Hashimoto

IPC分类号： G03G1500

CPC分类号： G03G15/605 ,  E05Y2201/638

摘要： An opening-closing device is capable of automatically positioning an opened pressing mechanism horizontally in relation to a supporting table. A base member is provided for fixation to a body of an apparatus on which the pressing mechanism is to be used. A supporting member is secured pivotably to the base member and a lifting member is provided to which a rear portion of the pressing mechanism is fixed to a free end of the supporting member with a supporting pin reversibly in a direction in which the lifting member will overlap the supporting member. An elastic member forces the supporting member along with the lifting member in the opening direction of the pressing mechanism while forcing the lifting member in a direction in which the lifting member will overlap the supporting member. The opening-closing device further has a mechanism for limiting to a predetermined range, the range of the lifting member being reversible about the pivoted position relative to the supporting member and an adjusting mechanism abutting a part of the base member or the apparatus body to reverse the lifting member.

摘要翻译： 开闭装置能够相对于支撑台水平地自动定位打开的按压机构。 提供基座构件用于固定到其上将使用按压机构的装置的主体。 支撑构件可枢转地固定到基部构件，并且提供提升构件，按压机构的后部通过支撑销以可提升构件将重叠的方向可逆地固定到支撑构件的自由端， 支撑构件。 弹性构件沿着按压机构的打开方向将提升构件沿着提升构件推压，同时迫使提升构件沿着提升构件将与支撑构件重叠的方向。 开闭装置还具有用于限制在预定范围的机构，提升构件的范围围绕枢转位置相对于支撑构件是可逆的;以及调节机构，邻接基座构件或装置主体的一部分以反向 提升构件。

公开(公告)号：US5635733A

公开(公告)日：1997-06-03

申请号：US601279

申请日：1996-02-16

申请人： Hiroaki Okagawa ,  Takayuki Hashimoto ,  Keiji Miyashita ,  Tomoo Yamada ,  Kazuyuki Tadatomo

发明人： Hiroaki Okagawa ,  Takayuki Hashimoto ,  Keiji Miyashita ,  Tomoo Yamada ,  Kazuyuki Tadatomo

IPC分类号： H01L33/14 ,  H01L33/30 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/14

摘要： In the light emitting element comprising an n-type semiconductor substrate, a lower electrode formed on the lower surface of the substrate, and a light emitting part having a pn junction, which is composed of an InGaAlP compound semiconductor material, a p-type current diffusing layer and an upper electrode which are laminated on the upper surface of the substrate in that order from the substrate side, the improvement wherein a carrier concentration of the current diffusing layer is lower on a light emitting part side thereof than that on an upper electrode side thereof, and at least the upper electrode side of the current diffusing layer is composed of GaP. By employing such structure, diffusion of the dopant to a light emitting part can be suppressed even when the carrier concentration of the upper part of the current diffusing layer is set to be higher, thereby affording a lower resistance of the current diffusing layer as a whole. The GaP being a compound semiconductor without Al, the amount of the dopant necessary for affording the superior effects of suppressing the diffusion of the dopant to the light emitting part can be less. Consequently, the luminous efficiency can be improved as compared with conventional ones, and a light emitting element having a long service life and superior reliability can be obtained.

摘要翻译： 在包含n型半导体衬底的发光元件中，形成在衬底的下表面上的下电极和由InGaAlP化合物半导体材料构成的具有pn结的发光部分，p型电流 扩散层和上电极，从衬底侧依次层叠在衬底的上表面上，其中电流扩散层的发光部分侧的载流子浓度比上电极的载流子浓度低 并且电流扩散层的至少上电极侧由GaP构成。 通过采用这样的结构，即使将电流扩散层的上部的载流子浓度设定得较高，也能够抑制掺杂剂向发光部的扩散，从而提供整体上的电流扩散层的较低的电阻 。 GaP是没有Al的化合物半导体，可以减少为了提供抑制掺杂剂向发光部的扩散的优异效果所需的掺杂剂的量。 因此，与现有技术相比，能够提高发光效率，能够得到使用寿命长，可靠性优异的发光元件。

公开(公告)号：US5631475A

公开(公告)日：1997-05-20

申请号：US498752

申请日：1995-07-06

申请人： Shinichi Watabe ,  Hiroaki Okagawa ,  Takayuki Hashimoto ,  Kazuyuki Tadatomo

发明人： Shinichi Watabe ,  Hiroaki Okagawa ,  Takayuki Hashimoto ,  Kazuyuki Tadatomo

IPC分类号： H01L29/205 ,  H01L21/20 ,  H01L21/205 ,  H01L33/12 ,  H01L33/30 ,  H01L33/40 ,  H01L33/00

CPC分类号： H01L33/40 ,  H01L33/30

摘要： A semiconductor light emitting element comprising a light emitting part comprising an AlGaInP active layer and a AlGaInP cladding layer, which is formed on a GaAs substrate, and an AlGaAs layer and a Ga.sub.x In.sub.1-x P layer (0.7.ltoreq.x.ltoreq.1.0) deposited in this order on said light emitting part, wherein said Ga.sub.x In.sub.1-x P layer has a thickness of not more than 1.0 .mu.m. According to the present invention, absorption of the emitted light by an electrode contact layer and the occurrence of an interfacial distortion between the electrode contact layer and the layer thereunder can be suppressed, and a semiconductor light emitting element permitting easy production thereof and having a high luminance and a long service life can be provided.

摘要翻译： 一种半导体发光元件，包括形成在GaAs衬底上的AlGaInP有源层和AlGaInP包层的发光部分，以及AlGaAs层和GaxIn1-xP层（0.7≤x≤1.0） 以上述顺序沉积在所述发光部分上，其中所述GaxIn1-xP层的厚度不大于1.0μm。 根据本发明，可以抑制由电极接触层吸收发射的光，并且可以抑制电极接触层与其下面的层之间的界面变形的发生，并且可以容易地制造并具有高的半导体发光元件 可以提供亮度和长的使用寿命。

公开(公告)号：US5562943A

公开(公告)日：1996-10-08

申请号：US288952

申请日：1994-08-11

申请人： Hen-Sik Koh ,  Yoshikazu Kawashima ,  Takayuki Hashimoto

发明人： Hen-Sik Koh ,  Yoshikazu Kawashima ,  Takayuki Hashimoto

IPC分类号： A23L1/304 ,  A23L1/202 ,  A23L1/237 ,  A23L1/238

CPC分类号： A23L27/50 ,  A23L27/40

摘要： A salt composition is provided for preventing excess intake of salt (sodium chloride) and achieving a well balanced intake of minerals. The composition which is used in the place of conventional table salt consists essentially of 100 parts by weight of a mixture containing 30 to 75% by weight of sodium chloride and 25 to 70% by weight of sylvinite admixed with 5 to 60 parts by weight of a citrate. Seasonings, such as soybean paste and soy sauce, and foods, such as pickles and kimchi, can be prepared with such a salt composition.

摘要翻译： 提供了一种盐组合物，用于防止过量摄入盐（氯化钠）并实现均匀的矿物摄入。 用于代替常规餐桌盐的组合物基本上由100重量份的含有30-75重量％氯化钠和25-70重量％的硅镁石的混合物与5-60重量份的 柠檬酸盐 可以用这样的盐组合物制备诸如大豆酱和酱油的调味料，以及腌菜和泡菜等食品。

公开(公告)号：US08618632B2

公开(公告)日：2013-12-31

申请号：US13041778

申请日：2011-03-07

申请人： Tetsuya Kawashima ,  Takayuki Hashimoto

发明人： Tetsuya Kawashima ,  Takayuki Hashimoto

IPC分类号： H01L23/52 ,  H05K1/14

CPC分类号： H01L27/0694 ,  H01L23/50 ,  H01L23/5383 ,  H01L23/5384 ,  H01L23/642 ,  H01L25/16 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/30107 ,  H05K1/0213 ,  H05K1/113 ,  H05K2201/10015 ,  H05K2201/10166 ,  H05K2201/10545 ,  H01L2924/00 ,  H01L2924/00012

摘要： There is provided a semiconductor device in which a wiring inductance of a DC/DC converter formed on a multi-layered wiring substrate can be reduced and the characteristics can be improved. In the semiconductor device, in an input-side capacitor, one capacitor electrode is electrically connected to a power-supply pattern between a control power MOSFET and a synchronous power MOSFET, and the other capacitor electrode is electrically connected to a ground pattern therebetween. The multi-layered wiring substrate includes: a via conductor arranged at a position of the one capacitor electrode for electrically connecting among a plurality of power-supply patterns in a thickness direction; and a via conductor arranged at a position of the other capacitor electrode for electrically connecting among a plurality of ground patterns in a thickness direction.

摘要翻译： 提供一种半导体器件，其中可以减少形成在多层布线基板上的DC / DC转换器的布线电感并且可以提高特性。 在半导体装置中，在输入侧电容器中，一个电容电极电连接到控制功率MOSFET与同步功率MOSFET之间的电源图案，另一个电容电极与它们之间的接地图电连接。 所述多层布线基板包括：通孔导体，布置在所述一个电容器电极的位置，用于在多个电源图案之间沿厚度方向电连接; 以及布置在另一电容电极的位置处的通孔导体，用于在多个接地图案之间沿厚度方向电连接。

公开(公告)号：US08319289B2

公开(公告)日：2012-11-27

申请号：US12005918

申请日：2007-12-27

申请人： Masaki Shiraishi ,  Noboru Akiyama ,  Takayuki Hashimoto

发明人： Masaki Shiraishi ,  Noboru Akiyama ,  Takayuki Hashimoto

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7816 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66689

摘要： A technique for suppressing lowering of withstand voltage and lowering of breakdown resistance and reducing a feedback capacitance of a power MISFET is provided. A lateral power MISFET that comprises a trench region whose insulating layer is formed shallower than an HV-Nwell layer is provided in the HV-Nwell layer (drift region) formed on a main surface of a semiconductor substrate in a direction from the main surface to the inside. The lateral power MISFET has an arrangement on a plane of the main surface including a source layer (source region) and a drain layer (drain region) arranged at opposite sides to each other across a gate electrode (first conducting layer), and a dummy gate electrode (second conducting layer) that is different from the gate electrode is arranged between the gate electrode and the drain layer.

摘要翻译： 提供了用于抑制耐压降低和击穿电阻降低并降低功率MISFET的反馈电容的技术。 在半导体衬底的主表面上形成的HV-Nwell层（漂移区域）中，沿着从主表面到主体表面的方向，设置包括其绝缘层形成为比HV-Nwell层浅的沟槽区域的横向功率MISFET 里面。 横向功率MISFET具有在主表面的平面上的布置，包括在栅极电极（第一导电层）上彼此相对设置的源极层（源极区域）和漏极层（漏极区域） 与栅电极不同的栅电极（第二导电层）配置在栅电极和漏极层之间。

公开(公告)号：US08258711B2

公开(公告)日：2012-09-04

申请号：US12779343

申请日：2010-05-13

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Takashi Hirao ,  Nobuyoshi Matsuura ,  Hideo Ishii

IPC分类号： H05B37/02

CPC分类号： H01L29/7813 ,  G09G3/342 ,  G09G2320/064 ,  H01L29/0615 ,  H01L29/0619 ,  H01L29/41766 ,  H01L29/7803 ,  H01L29/7811 ,  H01L29/7815 ,  H05B33/0818 ,  H05B33/0827 ,  H05B33/089 ,  Y02B20/347

摘要： The semiconductor device is included in the LED driving circuit (current regulator) of driving the LED array (with series-connected number m×parallel-connected number n), and is formed of a plurality (n pieces) of LED driving devices of controlling a current (constant-current driving) flowing in each string. A vertical semiconductor device, for example, a vertical MOSFET is used as the LED driving device. Both of a main device functioning as a constant-current driving device and a subsidiary device functioning as a circuit-breaking switch during dimming are formed inside a chip of the device, which are formed of the vertical semiconductor devices. In a first surface of the device, each source region of the main device and the subsidiary device is formed so as to be insulated from each other through an isolation region.

摘要翻译： 半导体器件包括在驱动LED阵列（串联数字×并联数n）的LED驱动电路（电流调节器）中，并且由多个（n个）LED驱动装置形成， 在每个串中流动的电流（恒流驱动）。 使用垂直半导体器件，例如垂直MOSFET作为LED驱动器件。 作为恒流驱动装置的主装置和在调光期间用作断路开关的辅助装置都形成在由垂直半导体装置形成的装置的芯片的内部。 在装置的第一表面中，主装置和附属装置的每个源区形成为通过隔离区彼此绝缘。

公开(公告)号：US08203380B2

公开(公告)日：2012-06-19

申请号：US12483668

申请日：2009-06-12

申请人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

发明人： Takayuki Hashimoto ,  Takashi Hirao ,  Noboru Akiyama

IPC分类号： H01L25/00

CPC分类号： H01L27/0629 ,  H01L2924/0002 ,  H02M7/003 ,  H01L2924/00

摘要： In a semiconductor device, a high-side driver is arranged in a region closer to a periphery of a semiconductor substrate than a high-side switch, and a low-side driver is arranged in a region closer to the periphery of the semiconductor substrate than the low-side switch. By this means, a path from a positive terminal of an input capacitor to a negative terminal of the input capacitor via the high-side switch and the low-side switch is short, a path from a positive terminal of a drive capacitor to a negative terminal of the drive capacitor via the low-side driver is short, and a path from a positive terminal of a boot strap capacitor to a negative terminal of the boot strap capacitor via the high-side driver is short, and therefore, the parasitic inductance can be reduced, and the conversion efficiency can be improved.

摘要翻译： 在半导体装置中，高侧驱动器配置在比高侧开关更靠近半导体基板的周围的区域，低边驱动器配置在比半导体基板的周边更靠近的区域， 低端开关。 通过这种方式，经由高侧开关和低侧开关从输入电容器的正极端子到输入电容器的负极端子的路径很短，从驱动电容器的正极端子到负极的路径 通过低侧驱动器的驱动电容器的端子短，通过高侧驱动器从引导电容器的正极端子到引导电容器的负极端子的路径短，因此，寄生电感 可以降低转换效率。

公开(公告)号：US20120001609A1

公开(公告)日：2012-01-05

申请号：US13230947

申请日：2011-09-13

申请人： Masaki SHIRAISHI ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Masaki SHIRAISHI ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： G05F1/46

CPC分类号： H02M1/08 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/166 ,  H03K17/6871 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

摘要翻译： 在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位， 低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动 并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。