公开(公告)号：US08638577B2

公开(公告)日：2014-01-28

申请号：US13230947

申请日：2011-09-13

申请人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： H02M1/38 ,  H02M3/155

CPC分类号： H02M1/08 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/166 ,  H03K17/6871 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

摘要翻译： 在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位， 低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动 并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。

公开(公告)号：US08044520B2

公开(公告)日：2011-10-25

申请号：US11624767

申请日：2007-01-19

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Masaki Shiraishi ,  Tetsuya Kawashima ,  Koji Tateno ,  Nobuyoshi Matsuura

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Masaki Shiraishi ,  Tetsuya Kawashima ,  Koji Tateno ,  Nobuyoshi Matsuura

IPC分类号： H01L23/52 ,  H01L29/40

CPC分类号： H01L25/16 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/05554 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H02M3/1588 ,  H03K17/08142 ,  H03K17/162 ,  H03K17/6871 ,  H03K2217/0036 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.

摘要翻译： 一种能够减少大电流和高频损耗的电源。 在用于电源的MCM中，高边功率MOSFET芯片，低边功率MOSFET芯片和驱动IC芯片驱动它们被密封在一个密封材料（封装绝缘树脂）中，布线DL的布线长度 将驱动IC芯片的输出端子与低边功率MOSFET芯片的栅极端子或源极端子连接的时间短于连接驱动器IC芯片的输出端子与栅极端子的布线DH的布线长度 高端功率MOSFET芯片或源极端子。 此外，使布线数量DL大于布线数量DH。

公开(公告)号：US07821243B2

公开(公告)日：2010-10-26

申请号：US11624837

申请日：2007-01-19

申请人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： G05F1/595

CPC分类号： H02M1/08 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/166 ,  H03K17/6871 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

摘要翻译： 在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位， 低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动 并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。

公开(公告)号：US20070278516A1

公开(公告)日：2007-12-06

申请号：US11809023

申请日：2007-05-30

申请人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

IPC分类号： H01L31/111

CPC分类号： H01L25/16 ,  G06F1/26 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0603 ,  H01L2224/40 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETS, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.

摘要翻译： 本发明提供一种降低电源单元的主电路的寄生电感的技术。 在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是 由n沟道垂直MOSFETS形成，并且用于高侧开关的功率MOSFET的源极和用于低侧开关的功率MOSFET的漏电极经由相同的管芯焊盘电连接。

公开(公告)号：US07687885B2

公开(公告)日：2010-03-30

申请号：US11809023

申请日：2007-05-30

申请人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

IPC分类号： H01L31/111 ,  G05F1/10 ,  H02J3/12 ,  H01L25/04 ,  H01L25/18 ,  G06F1/26 ,  H02M3/155

CPC分类号： H01L25/16 ,  G06F1/26 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0603 ,  H01L2224/40 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETS, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.

摘要翻译： 本发明提供一种降低电源单元的主电路的寄生电感的技术。 在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是 由n沟道垂直MOSFETS形成，并且用于高侧开关的功率MOSFET的源极和用于低侧开关的功率MOSFET的漏电极经由相同的管芯焊盘电连接。

公开(公告)号：US08319289B2

公开(公告)日：2012-11-27

申请号：US12005918

申请日：2007-12-27

申请人： Masaki Shiraishi ,  Noboru Akiyama ,  Takayuki Hashimoto

发明人： Masaki Shiraishi ,  Noboru Akiyama ,  Takayuki Hashimoto

IPC分类号： H01L29/76 ,  H01L29/94 ,  H01L31/062 ,  H01L31/113 ,  H01L31/119

CPC分类号： H01L29/7816 ,  H01L21/823814 ,  H01L21/823878 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0696 ,  H01L29/086 ,  H01L29/0878 ,  H01L29/402 ,  H01L29/456 ,  H01L29/665 ,  H01L29/66689

摘要： A technique for suppressing lowering of withstand voltage and lowering of breakdown resistance and reducing a feedback capacitance of a power MISFET is provided. A lateral power MISFET that comprises a trench region whose insulating layer is formed shallower than an HV-Nwell layer is provided in the HV-Nwell layer (drift region) formed on a main surface of a semiconductor substrate in a direction from the main surface to the inside. The lateral power MISFET has an arrangement on a plane of the main surface including a source layer (source region) and a drain layer (drain region) arranged at opposite sides to each other across a gate electrode (first conducting layer), and a dummy gate electrode (second conducting layer) that is different from the gate electrode is arranged between the gate electrode and the drain layer.

摘要翻译： 提供了用于抑制耐压降低和击穿电阻降低并降低功率MISFET的反馈电容的技术。 在半导体衬底的主表面上形成的HV-Nwell层（漂移区域）中，沿着从主表面到主体表面的方向，设置包括其绝缘层形成为比HV-Nwell层浅的沟槽区域的横向功率MISFET 里面。 横向功率MISFET具有在主表面的平面上的布置，包括在栅极电极（第一导电层）上彼此相对设置的源极层（源极区域）和漏极层（漏极区域） 与栅电极不同的栅电极（第二导电层）配置在栅电极和漏极层之间。

公开(公告)号：US20110278655A1

公开(公告)日：2011-11-17

申请号：US13192584

申请日：2011-07-28

申请人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

IPC分类号： H01L27/06

CPC分类号： H01L25/16 ,  G06F1/26 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0603 ,  H01L2224/40 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： Parasitic inductance of the main circuit of a power source unit is reduced. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are electrically connected via the same die pad.

摘要翻译： 降低了电源单元主电路的寄生电感。 在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是 由n沟道垂直MOSFET形成，并且用于高侧开关的功率MOSFET的源极和用于低侧开关的功率MOSFET的漏电极经由相同的管芯焊盘电连接。

公开(公告)号：US20100176430A1

公开(公告)日：2010-07-15

申请号：US12721201

申请日：2010-03-10

申请人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

发明人： Takayuki Hashimoto ,  Noboru Akiyama ,  Masaki Shiraishi ,  Tetsuya Kawashima

IPC分类号： H01L27/06

CPC分类号： H01L25/16 ,  G06F1/26 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/0603 ,  H01L2224/40 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49111 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/01074 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/45099 ,  H01L2224/05599

摘要： The present invention provides a technology for reducing the parasitic inductance of the main circuit of a power source unit. In a non-insulated DC-DC converter having a circuit in which a power MOSFET for high side switch and a power MOSFET for low side switch are connected in series, the power MOSFET for high side switch and the power MOSFET for low side switch are formed of n-channel vertical MOSFETs, and a source electrode of the power MOSFET for high side switch and a drain electrode of the power MOSFET for low side switch are

摘要翻译： 本发明提供一种降低电源单元的主电路的寄生电感的技术。 在具有用于高侧开关的功率MOSFET和低侧开关的功率MOSFET串联的电路的非绝缘DC-DC转换器中，用于高侧开关的功率MOSFET和用于低侧开关的功率MOSFET是 由n沟道垂直MOSFET形成，用于高侧开关的功率MOSFET的源极和用于低边开关的功率MOSFET的漏电极

公开(公告)号：US20070200537A1

公开(公告)日：2007-08-30

申请号：US11624767

申请日：2007-01-19

申请人： Noboru Akiyama ,  Takayuki Hashimoto ,  Masaki Shiraishi ,  Tetsuya Kawashima ,  Koji Tateno ,  Nobuyoshi Matsuura

发明人： Noboru Akiyama ,  Takayuki Hashimoto ,  Masaki Shiraishi ,  Tetsuya Kawashima ,  Koji Tateno ,  Nobuyoshi Matsuura

IPC分类号： G05F1/10 ,  H02J3/12

CPC分类号： H01L25/16 ,  H01L24/37 ,  H01L24/40 ,  H01L2224/05554 ,  H01L2224/37124 ,  H01L2224/37147 ,  H01L2224/40245 ,  H01L2224/40247 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/48472 ,  H01L2224/49171 ,  H01L2224/49175 ,  H01L2224/73221 ,  H01L2224/8385 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01023 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/1306 ,  H01L2924/13091 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/30107 ,  H02M3/1588 ,  H03K17/08142 ,  H03K17/162 ,  H03K17/6871 ,  H03K2217/0036 ,  Y02B70/1466 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A power supply capable of reducing loss of large current and high frequency. In an MCM for power supply in which a high-side power MOSFET chip, a low-side power MOSFET chip and a driver IC chip driving them are sealed in one sealing material (a capsulating insulation resin), a wiring length of a wiring DL connecting an output terminal of the driver IC chip to a gate terminal of the low-side power MOSFET chip or a source terminal is made shorter than a wiring length of a wiring DH connecting the output terminal of the driver IC chip to a gate terminal of the high-side power MOSFET chip or a source terminal. Further, the number of the wiring DL is made larger than the number of the wiring DH.

摘要翻译： 一种能够减少大电流和高频损耗的电源。 在用于电源的MCM中，高边功率MOSFET芯片，低边功率MOSFET芯片和驱动IC芯片驱动它们被密封在一个密封材料（封装绝缘树脂）中，布线DL的布线长度 将驱动IC芯片的输出端子与低边功率MOSFET芯片的栅极端子或源极端子连接的距离比连接驱动器IC芯片的输出端子的栅极端子的布线长度短 高端功率MOSFET芯片或源极端子。 此外，使布线数量DL大于布线数量DH。

公开(公告)号：US20070195563A1

公开(公告)日：2007-08-23

申请号：US11624837

申请日：2007-01-19

申请人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

发明人： Masaki Shiraishi ,  Takayuki Hashimoto ,  Noboru Akiyama

IPC分类号： H02M3/335

CPC分类号： H02M1/08 ,  H01L24/48 ,  H01L24/49 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49175 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01082 ,  H01L2924/12032 ,  H01L2924/12036 ,  H01L2924/13091 ,  H01L2924/14 ,  H01L2924/30107 ,  H03K17/0822 ,  H03K17/165 ,  H03K17/166 ,  H03K17/6871 ,  H01L2924/00 ,  H01L2224/45099

摘要： In a non-isolated DC/DC converter, a reference potential for a low-side pre-driver which drives a gate of a low-side MOSFET is applied from a portion except for a main circuit passing through a high-side MOSFET and the low-side MOSFET so that a parasitic inductance between a source of the low-side MOSFET and the pre-driver is increased without increasing the sum of parasitic inductances in the main circuit and negative potential driving of the gate of the low-side MOSFET can be performed and a self turn-on phenomenon can be prevented without adding any member and changing drive system.

摘要翻译： 在非隔离型DC / DC转换器中，从通过高侧MOSFET的主电路以外的部分施加驱动低侧MOSFET的栅极的低侧预驱动器的基准电位， 低侧MOSFET，使得低侧MOSFET的源极与预驱动器之间的寄生电感增加，而不增加主电路中的寄生电感的和，并且低侧MOSFET的栅极的负电位驱动 并且可以防止在不添加任何构件和改变驱动系统的情况下自启闭现象。