利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

82 条记录 (耗时 0.034 秒)

    Nonvolatile semiconductor memory device
    34.
    发明授权
    Nonvolatile semiconductor memory device 失效
    非易失性半导体存储器件

    公开(公告)号：US08559216B2

    公开(公告)日：2013-10-15

    申请号：US13560557

    申请日：2012-07-27

    申请人： Naoki Yasuda ,  Daisuke Matsushita ,  Koichi Muraoka

    发明人： Naoki Yasuda ,  Daisuke Matsushita ,  Koichi Muraoka

    IPC分类号： G11C11/00

    CPC分类号： H01L27/101 ,  H01L27/1021 ,  H01L27/2418 ,  H01L27/2481

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a plurality of first interconnections arranged parallel, a plurality of second interconnections arranged parallel to intersect the first interconnections, and memory cell portions respectively arranged at intersecting portions between the first and second interconnections and each configured by laminating a variable-resistance element and a diode element. The diode element has a laminated structure having a first insulating film, a conductive fine grain layer and a second insulating film. The physical film thickness of the second insulating film is greater than the first insulating film and the dielectric constant of the second insulating film is greater than the first insulating film.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括平行布置的多个第一互连，并行布置成与第一互连相交的多个第二互连，以及分别布置在第一和第二互连之间的相交部分处的每个配置的存储单元部分 通过层叠可变电阻元件和二极管元件。 二极管元件具有具有第一绝缘膜，导电细晶粒层和第二绝缘膜的层叠结构。 第二绝缘膜的物理膜厚度大于第一绝缘膜，并且第二绝缘膜的介电常数大于第一绝缘膜。

    Nonvolatile semiconductor memory device with high-K insulating film
    36.
    发明授权
    Nonvolatile semiconductor memory device with high-K insulating film 失效
    具有高K绝缘膜的非易失性半导体存储器件

    公开(公告)号：US08482053B2

    公开(公告)日：2013-07-09

    申请号：US13204412

    申请日：2011-08-05

    申请人： Akira Takashima ,  Masao Shingu ,  Koichi Muraoka

    发明人： Akira Takashima ,  Masao Shingu ,  Koichi Muraoka

    IPC分类号： H01L29/792

    CPC分类号： H01L21/28282 ,  H01L21/02145 ,  H01L21/02156 ,  H01L21/02161 ,  H01L21/28273 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/513

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a source region and a drain region provided on a surface area of a semiconductor region, a tunnel insulating film provided on a channel between the source region and the drain region, a charge storage layer provided on the tunnel insulating film, a first dielectric film provided on the charge storage layer and containing lanthanum aluminum silicon oxide or oxynitride, a second dielectric film provided on the first dielectric film and containing oxide or oxynitride containing at least one of hafnium (Hf), zirconium (Zr), titanium (Ti), and a rare earth metal, and a control gate electrode provided on the second dielectric film.

    摘要翻译： 根据一个实施例，非易失性半导体存储器件包括设置在半导体区域的表面区域上的源极区域和漏极区域，设置在源极区域和漏极区域之间的沟道上的隧道绝缘膜，设置有电荷存储层 在隧道绝缘膜上，设置在电荷存储层上并含有镧铝氧化物或氧氮化物的第一电介质膜，设置在第一电介质膜上并含有氧化物或氮氧化物的第二电介质膜，其含有铪（Hf）， 锆（Zr），钛（Ti）和稀土金属，以及设置在第二电介质膜上的控制栅电极。

    Nonvolatile semiconductor memory device and method for driving same
    37.
    发明授权
    Nonvolatile semiconductor memory device and method for driving same 有权

    公开(公告)号：US08391075B2

    公开(公告)日：2013-03-05

    申请号：US13239964

    申请日：2011-09-22

    申请人： Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

    发明人： Jun Fujiki ,  Naoki Yasuda ,  Koichi Muraoka

    IPC分类号： G11C11/34 ,  G11C16/04 ,  G11C16/06

    CPC分类号： G11C16/26 ,  G11C16/3454 ,  G11C16/3459

    摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a memory string including a plurality of memory cells and, a driving unit. In sequentially reading data stored in the memory cells by applying a first signal to the memory cells, a second signal is applied to a second cell. The driving unit applies a third signal to the gate electrodes of all the memory cells prior to the sequential reading. The third signal has a voltage smaller than the second signal and time duration equal to or more than that of a sum of time duration during which the first signal is applied to all the memory cells. In a period prior to the third signal application, the driving unit performs at least one of applying a fourth signal to the gate electrodes and matching a potential of the gate electrodes with that of the semiconductor layer.

    Nonvolatile semiconductor memory device and method for driving the same
    38.
    发明授权
    Nonvolatile semiconductor memory device and method for driving the same 失效
    非易失性半导体存储器件及其驱动方法

    公开(公告)号：US08223552B2

    公开(公告)日：2012-07-17

    申请号：US12496064

    申请日：2009-07-01

    申请人： Jun Fujiki ,  Koichi Muraoka ,  Naoki Yasuda

    发明人： Jun Fujiki ,  Koichi Muraoka ,  Naoki Yasuda

    IPC分类号： G11C11/40

    CPC分类号： H01L29/7881 ,  G11C16/0466 ,  H01L27/11521 ,  H01L27/11568 ,  H01L29/792

    摘要： A nonvolatile semiconductor memory device includes a memory cell and a driving unit. The a memory cell has a semiconductor layer having, a channel, and a source region and a drain region provided on both sides of the channel; a first insulating film provided on the channel; a charge retention layer provided on the first insulating film; and a gate electrode provided on the charge retention layer. The driving unit applies a burst signal having a constant amplitude and a constant frequency between the gate electrode and the semiconductor layer and performs at least one of operations of programming and erasing charge on the charge retention layer.

    摘要翻译： 非易失性半导体存储器件包括存储单元和驱动单元。 存储单元具有半导体层，具有设置在沟道两侧的沟道以及源极区和漏极区; 设置在所述通道上的第一绝缘膜; 设置在所述第一绝缘膜上的电荷保持层; 以及设置在电荷保持层上的栅电极。 驱动单元在栅电极和半导体层之间施加具有恒定幅度和恒定频率的突发​​信号，并执行对电荷保持层进行编程和擦除电荷的操作中的至少一种。

    Nonvolatile semiconductor memory device
    39.
    发明授权
    Nonvolatile semiconductor memory device 有权
    非易失性半导体存储器件

    公开(公告)号：US08193577B2

    公开(公告)日：2012-06-05

    申请号：US12506588

    申请日：2009-07-21

    申请人： Akira Takashima ,  Masao Shingu ,  Naoki Yasuda ,  Koichi Muraoka

    发明人： Akira Takashima ,  Masao Shingu ,  Naoki Yasuda ,  Koichi Muraoka

    IPC分类号： H01L29/792 ,  H01L21/8238 ,  H01L21/336

    CPC分类号： H01L29/513 ,  H01L27/11568 ,  H01L29/4234 ,  H01L29/792

    摘要： A nonvolatile semiconductor memory device includes a source region and a drain region provided apart from each other in a semiconductor substrate, a first insulating film provided on a channel region between the source region and the drain region, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer and including a stacked structure of a lanthanum aluminum silicate film and a dielectric film made of silicon oxide or silicon oxynitride, and a control gate electrode provided on the second insulating film.

    摘要翻译： 非易失性半导体存储器件包括在半导体衬底中彼此分开设置的源极区域和漏极区域，设置在源极区域和漏极区域之间的沟道区域上的第一绝缘膜，设置在第一绝缘体上的电荷存储层 膜，设置在电荷存储层上并包括硅酸铝镧硅酸盐膜和由氧化硅或氮氧化硅制成的电介质膜的叠层结构的第二绝缘膜和设置在第二绝缘膜上的控制栅电极。