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    LOW PROFILE MAGNETIC FILTER
    31.
    发明申请
    LOW PROFILE MAGNETIC FILTER 有权
    低型磁性滤波器

    公开(公告)号：US20140113454A1

    公开(公告)日：2014-04-24

    申请号：US14054902

    申请日：2013-10-16

    Applicant: Tokyo Electron Limited

    Inventor： Lee Chen ,  Jianping Zhao ,  Merritt Funk ,  Zhiying Chen

    IPC: H01L21/3065 ,  H01L21/683

    CPC classification number: H01L21/3065 ,  H01J37/32422 ,  H01J37/3266 ,  H01L21/683

    Abstract: A plasma processing apparatus includes a processing chamber having a plasma processing space therein and a substrate support in the processing chamber at a first end for supporting a substrate. A plasma source is coupled into the processing space and configured to form a plasma at a second end of the processing chamber opposite said first end. The apparatus further includes a magnetic grid having an intensity of a magnetic flux therein, a plurality of passageways penetrating from a first side to a second side, a thickness, a transparency, a passageway aspect ratio, and a position within the processing chamber between the second end and the substrate. The intensity, the thickness, the transparency, the passageway aspect ratio, and the position are configured to cause electrons having energies above an acceptable maximum level to divert from the direction. A method of obtaining low average electron energy flux onto the substrate is also provided.

    Abstract translation: 等离子体处理装置包括其中具有等离子体处理空间的处理室和用于支撑基板的第一端处于处理室中的基板支撑件。 等离子体源耦合到处理空间中并且被配置为在与第一端相对的处理室的第二端处形成等离子体。 该装置还包括具有其中的磁通强度的磁栅格，从第一侧穿透到第二侧的多个通道，厚度，透明度，通道纵横比以及处理室内的位置 第二端和衬底。 强度，厚度，透明度，通道长宽比和位置被配置为使能量高于可接受的最大电平的电子从该方向转移。 还提供了一种在基板上获得低平均电子能量通量的方法。

    STABLE SURFACE WAVE PLASMA SOURCE
    33.
    发明申请
    STABLE SURFACE WAVE PLASMA SOURCE 有权
    稳定的表面波等离子体源

    公开(公告)号：US20130264938A1

    公开(公告)日：2013-10-10

    申请号：US13830090

    申请日：2013-03-14

    Applicant: Tokyo Electron Limited

    Inventor： Lee Chen ,  Jianping Zhao ,  Ronald V. Bravenec ,  Merritt Funk

    IPC: H05H1/46

    CPC classification number: H05H1/46 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/67005 ,  H01Q13/10

    Abstract: A surface wave plasma (SWP) source is described. The SWP source comprises an electromagnetic (EM) wave launcher configured to couple EM energy in a desired EM wave mode to a plasma by generating a surface wave on a plasma surface of the EM wave launcher adjacent the plasma. The EM wave launcher comprises a slot antenna having at least one slot. The SWP source further comprises a first recess configuration and a second recess configuration formed in the plasma surface, wherein at least one first recess of the first recess configuration differs in size and/or shape from at least one second recess of the second recess configurations. A power coupling system is coupled to the EM wave launcher and configured to provide the EM energy to the EM wave launcher for forming the plasma.

    Abstract translation: 描述了表面波等离子体（SWP）源。 SWP源包括电磁（EM）波发射器，其被配置为通过在邻近等离子体的EM波发射器的等离子体表面上产生表面波来将期望的EM波模式中的EM能量耦合到等离子体。 EM波发射器包括具有至少一个时隙的缝隙天线。 SWP源还包括形成在等离子体表面中的第一凹陷构型和第二凹陷构型，其中第一凹槽构型的至少一个第一凹槽的尺寸和/或形状与第二凹部构型的至少一个第二凹部不同。 功率耦合系统耦合到EM波发射器并且被配置为向用于形成等离子体的EM波发射器提供EM能量。

    RF voltage and current (V-I) sensors and measurement methods
    34.
    发明授权
    RF voltage and current (V-I) sensors and measurement methods 有权

    公开(公告)号：US12176183B2

    公开(公告)日：2024-12-24

    申请号：US18486220

    申请日：2023-10-13

    Applicant: Tokyo Electron Limited

    Inventor： Barton Lane ,  Merritt Funk ,  Yohei Yamazawa ,  Justin Moses ,  Chelsea DuBose ,  Michael Hummel

    IPC: H01J37/32 ,  G01R29/08

    Abstract: A radio frequency sensor assembly includes a sensor casing disposed around a central hole, the sensor casing including a first conductive cover and a second conductive cover. The assembly includes a cavity disposed around the central hole and includes a dielectric material, the cavity being bounded by a first major outer surface and a second major outer surface along a radial direction from a center of the central hole, where the first conductive cover is electrically coupled to the second conductive cover through a coupling region beyond the second major outer surface of the cavity, and electrically insulated from the second conductive cover by the cavity and the central hole. The assembly includes a current sensor electrically insulated from the sensor casing and including a current pickup disposed symmetrically around the central hole, the current pickup being disposed within the cavity and being insulated from the sensor casing.

    IN-SITU DIAGNOSIS OF PLASMA SYSTEM
    35.
    发明公开
    IN-SITU DIAGNOSIS OF PLASMA SYSTEM 审中-公开

    公开(公告)号：US20240203713A1

    公开(公告)日：2024-06-20

    申请号：US18066078

    申请日：2022-12-14

    Applicant: Tokyo Electron Limited

    Inventor： Barton Lane ,  Jun Shinagawa ,  Merritt Funk ,  Yohei Yamazawa

    IPC: H01J37/32

    CPC classification number: H01J37/32972 ,  H01J37/32082 ,  H01J37/3244 ,  H01J2237/332 ,  H01J2237/3341 ,  H01J2237/335

    Abstract: A method for processing a substrate that includes: processing a series of substrates using a plasma processing system having a plasma processing chamber by reactive ion etching (RIE) according to a RIE process condition; and after the processing, performing an in-situ diagnosis of the plasma processing system, the in-situ diagnosis including loading a substrate in the plasma processing chamber, depositing a film over the substrate, purging the plasma processing chamber with an inert gas, generating a RF plasma in the plasma processing chamber from the inert gas, sputtering the film to generate an etch product, the sputtering including exposing the substrate to the RF plasma, determining a rate of the sputtering of the film, and based on the rate of the sputtering of the film, determining a usability condition of the plasma processing system for processing another substrate.

    Apparatus for Plasma Processing
    38.
    发明申请
    Apparatus for Plasma Processing 有权

    公开(公告)号：US20230054430A1

    公开(公告)日：2023-02-23

    申请号：US17664607

    申请日：2022-05-23

    Applicant: Tokyo Electron Limited

    Inventor： Barton Lane ,  Yohei Yamazawa ,  Jason Mehigan ,  Merritt Funk

    IPC: H01J37/32

    Abstract: According to an embodiment, an apparatus for a plasma processing system is provided. The apparatus includes an interface, a radiating structure, and conductive offsets. The interface includes a first conductive plate couplable to an RF source, a second conductive plate disposed between the RF source and the first conductive plate, and conductive concentric ring structures disposed between the second conductive plate and a substrate holder. The conductive offsets are arranged to couple the conductive concentric ring structures to the radiating structure.

    MICROWAVE PLASMA DEVICE
    40.
    发明申请
    MICROWAVE PLASMA DEVICE 审中-公开

    公开(公告)号：US20180226255A1

    公开(公告)日：2018-08-09

    申请号：US15941901

    申请日：2018-03-30

    Applicant: TOKYO ELECTRON LIMITED

    Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen

    IPC: H01L21/268 ,  H01J37/32

    CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

    Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

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