公开(公告)号：US20180330958A1

公开(公告)日：2018-11-15

申请号：US15975852

申请日：2018-05-10

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Masahiro Tabata

IPC: H01L21/3065 ,  H01L21/04 ,  H01L21/311 ,  H01L21/67

Abstract: A selectivity can be improved in a desirable manner when etching a processing target object containing silicon carbide. An etching method of processing the processing target object, having a first region containing silicon carbide and a second region containing silicon nitride and in contact with the first region, includes etching the first region to remove the first region atomic layer by atomic layer by repeating a sequence comprising: generating plasma from a first gas containing nitrogen to form a mixed layer containing ions contained in the plasma generated from the first gas in an atomic layer of an exposed surface of the first region; and generating plasma from a second gas containing fluorine to remove the mixed layer by radicals contained in the plasma generated from the second gas.

公开(公告)号：US12071687B2

公开(公告)日：2024-08-27

申请号：US17900577

申请日：2022-08-31

Applicant: Tokyo Electron Limited

Inventor： Michiko Nakaya ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  C23C16/52 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311

CPC classification number: C23C16/45536 ,  C23C16/45544 ,  C23C16/45553 ,  C23C16/52 ,  H01J37/32834 ,  H01L21/0228 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/3321 ,  H01J2237/3341

Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US11961746B2

公开(公告)日：2024-04-16

申请号：US17887061

申请日：2022-08-12

Applicant: Tokyo Electron Limited

Inventor： Sho Kumakura ,  Hironari Sasagawa ,  Maju Tomura ,  Yoshihide Kihara

IPC: H01L21/67 ,  C23C16/02 ,  C23C16/46 ,  C23C16/50 ,  H01L21/027 ,  H01L21/033 ,  H01L21/3065 ,  H01L21/311 ,  H01L21/32

CPC classification number: H01L21/67069 ,  C23C16/0227 ,  C23C16/46 ,  C23C16/50 ,  H01L21/0271 ,  H01L21/0337 ,  H01L21/30655 ,  H01L21/31116 ,  H01L21/31122 ,  H01L21/31144 ,  H01L21/67207 ,  H01L21/32

Abstract: A substrate processing method includes (a) forming a recess on a workpiece by partially etching the workpiece; and (b) forming a film having a thickness that differs along a depth direction of the recess, on a side wall of the recess. Step (b) includes (b-1) supplying a first reactant, and causing the first reactant to be adsorbed to the side wall of the recess; and (b-2) supplying a second reactant, and causing the second reactant to react with the first reactant thereby forming a film.

公开(公告)号：US11862441B2

公开(公告)日：2024-01-02

申请号：US17330729

申请日：2021-05-26

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hironari Sasagawa ,  Sho Kumakura

IPC: H01L21/306 ,  H01J37/32 ,  H01L21/311 ,  H01L21/3065

CPC classification number: H01J37/32935 ,  H01J37/32449 ,  H01L21/3065 ,  H01L21/31116 ,  H01L21/31144 ,  H01J2237/334

Abstract: A plasma processing method includes providing a substrate having a recess is provided in a processing container; generating plasma in the processing container to form a film on the recess; monitoring a state of the plasma generated in the generating; and determining necessity of re-execution of the generating and processing conditions for the re-execution based on the monitored plasma state.

公开(公告)号：US20230010069A1

公开(公告)日：2023-01-12

申请号：US17820670

申请日：2022-08-18

Applicant: Tokyo Electron Limited

Inventor： Masahiro Tabata ,  Toru Hisamatsu ,  Sho Kumakura ,  Ryuichi Asako ,  Shinya Ishikawa ,  Masanobu Honda

IPC: H01L21/3213 ,  H01J37/32 ,  H01L21/02 ,  G03F7/40 ,  H01L21/311 ,  H01L21/3065 ,  H01L21/308 ,  H01L21/768

Abstract: A method of processing a substrate is provided. The substrate includes an etching target region and a patterned region. The patterned region is provided on the etching target region. In the method, an organic film is formed on a surface of the substrate. Subsequently, the etching target region is etched by plasma generated from a processing gas. The organic film is formed in a state that the substrate is placed in a processing space within a chamber. When the organic film is formed, a first gas containing a first organic compound is supplied toward the substrate, and then, a second gas containing a second organic compound is supplied toward the substrate. An organic compound constituting the organic film is generated by polymerization of the first organic compound and the second organic compound.

公开(公告)号：US20220411928A1

公开(公告)日：2022-12-29

申请号：US17900577

申请日：2022-08-31

Applicant: Tokyo Electron Limited

Inventor： Michiko NAKAYA ,  Toru Hisamatsu ,  Shinya Ishikawa ,  Sho Kumakura ,  Masanobu Honda ,  Yoshihide Kihara

IPC: C23C16/455 ,  H01J37/32 ,  H01L21/02 ,  H01L21/311 ,  C23C16/52

Abstract: A plasma processing apparatus in the present disclosure includes a plasma processing chamber, a gas supply, a power supply, and a controller. The controller causes (a) forming a first film on side walls of an opening of a processing target using the plasma so that the first film has different thicknesses along a spacing between pairs of side walls facing each other, and (b) forming a second film by performing a film forming cycle one or more times after (a) so that the second film has different thicknesses along the spacing between the pairs of side walls facing each other.

公开(公告)号：US11239090B2

公开(公告)日：2022-02-01

申请号：US16521080

申请日：2019-07-24

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro Tabata ,  Sho Kumakura

IPC: H01L21/311 ,  H01L21/02

Abstract: A plasma processing method executed by a plasma processing apparatus includes steps of an opening formation, a first film formation, a second film formation, and an etching. In the opening formation, the plasma processing apparatus performs etching on a substrate including a base layer and a first layer formed on the base layer so as to form an opening in the first layer. When determined that the opening satisfies a predetermined condition, in the first film formation, the plasma processing apparatus forms an inhibitor on a bottom surface of the opening so as to form a first film to which a predetermined gas species is not adsorbed. After the formation of the first film, the plasma processing apparatus forms a second film on the side wall of the opening in the second film formation. The plasma processing apparatus also performs etching in the opening in the etching.

公开(公告)号：US11094550B2

公开(公告)日：2021-08-17

申请号：US16744800

申请日：2020-01-16

Applicant: TOKYO ELECTRON LIMITED

Inventor： Sho Kumakura ,  Ryutaro Suda

IPC: H01L21/3065 ,  H01L21/311 ,  H01J37/32 ,  H01L21/3213 ,  H01L21/683 ,  H01L21/67

Abstract: An etching method include: etching a silicon-containing film or a metal-containing film formed on a substrate; and heating the substrate by temporarily irradiating the substrate with electromagnetic waves during the etching.

公开(公告)号：US20210159084A1

公开(公告)日：2021-05-27

申请号：US16953369

申请日：2020-11-20

Applicant: Tokyo Electron Limited

Inventor： Maju Tomura ,  Sho Kumakura ,  Hironari Sasagawa ,  Yoshihide Kihara

IPC: H01L21/311 ,  H01J37/32

Abstract: A technique improves pattern features formed by etching and the uniformity of the features across the surface of a substrate. An etching method includes steps a), b), c), d), and e). Step a) includes placing, on a support, a substrate including a target film. Step b) includes partially etching the target film and forming a recess. Step c) includes setting the temperature of the support at a first temperature, and forming, on a sidewall of the recess, a first film having a first film thickness distribution. Step d) includes partially further etching the target film having the first film formed on the target film. Step e) includes setting the temperature of the support at a second temperature different from the first temperature, and forming, on the sidewall of the recess, a second film having a second film thickness distribution different from the first film thickness distribution.

公开(公告)号：US10755944B2

公开(公告)日：2020-08-25

申请号：US16212835

申请日：2018-12-07

Applicant: TOKYO ELECTRON LIMITED

Inventor： Masahiro Tabata ,  Sho Kumakura

IPC: H01L21/311 ,  H01L21/67 ,  H01J37/32

Abstract: An etching method selectively etches a first region of a substrate with respect to a second region of the substrate. At least a portion of the first region, which includes the surface of the first region, is modified by plasma to form a first modified region. At least a portion of the second region, which includes the surface of the second region, is modified by plasma to form a second modified region. The first modified region is selectively etched with respect to the second modified region by plasma.