公开(公告)号：US08976216B2

公开(公告)日：2015-03-10

申请号：US13090654

申请日：2011-04-20

申请人： Yoshihiro Ohba ,  Satoru Sugawara ,  Toshihiro Ishii

发明人： Yoshihiro Ohba ,  Satoru Sugawara ,  Toshihiro Ishii

IPC分类号： B41J2/385 ,  G01D15/06 ,  G03G15/01 ,  B41J2/47 ,  G02B5/00 ,  G02B26/12 ,  B41J2/455

CPC分类号： B41J2/473 ,  B41J2/455 ,  G02B5/005 ,  G02B26/124

摘要： A light source unit includes a surface-emitting laser array including light emitting units; and an apertured member provided on a light path of light beams emitted from the surface-emitting laser array, the apertured member including an aperture. In at least one direction, an intensity distribution of interference patterns caused by the light beams passing through the aperture includes an equal number of crests and troughs.

摘要翻译： 光源单元包括包括发光单元的表面发射激光器阵列; 以及设置在从所述表面发射激光器阵列发射的光束的光路上的有孔构件，所述有孔构件包括孔。 在至少一个方向上，由穿过孔径的光束引起的干涉图案的强度分布包括相等数量的波峰和波谷。

公开(公告)号：US08111725B2

公开(公告)日：2012-02-07

申请号：US12464408

申请日：2009-05-12

申请人： Toshihiro Ishii ,  Kengo Makita ,  Naoto Jikutani ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Satoru Sugawara

发明人： Toshihiro Ishii ,  Kengo Makita ,  Naoto Jikutani ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Satoru Sugawara

IPC分类号： H01S5/00

CPC分类号： H01S5/18355 ,  G03G15/04072 ,  G03G15/0435 ,  G03G2215/0404 ,  H01S5/18311 ,  H01S5/3202 ,  H01S5/423

摘要： A disclosed surface-emitting laser includes a substrate and multiple semiconductor layers stacked on the substrate. A normal of the principal plane of the substrate is inclined with respect to one of crystal orientations toward one of crystal orientations . The semiconductor layers include a resonator structure including an active layer; and a semiconductor multilayer mirror stacked on the resonator structure. The semiconductor multilayer mirror includes a confined structure where a current passage area is surrounded by an oxidized area including at least an oxide generated by oxidation of a part of a selective oxidation layer containing aluminum. A strain field caused by the oxidation is present at least in a part of the vicinity of the oxidized area. In the strain field, the amount of strain in a first axis direction is different from the amount of strain in a second axis direction.

摘要翻译： 公开的表面发射激光器包括衬底和堆叠在衬底上的多个半导体层。 衬底的主平面的法线相对于晶体取向<1 0 0>之一朝向晶体取向<11 1>之一倾斜。 半导体层包括包括有源层的谐振器结构; 以及堆叠在谐振器结构上的半导体多层反射镜。 半导体多层反射镜包括限制结构，其中电流通道区域被氧化区域所包围，所述氧化区域至少包括由含有铝的选择氧化层的一部分的氧化而产生的氧化物。 氧化引起的应变场至少存在于氧化区附近的一部分。 在应变场中，第一轴方向的应变量与第二轴方向的应变量不同。

公开(公告)号：US20110267415A1

公开(公告)日：2011-11-03

申请号：US13090654

申请日：2011-04-20

申请人： Yoshihiro OHBA ,  Satoru Sugawara ,  Toshihiro Ishii

发明人： Yoshihiro OHBA ,  Satoru Sugawara ,  Toshihiro Ishii

IPC分类号： B41J2/435 ,  G02B26/10 ,  F21V5/00 ,  F21V5/04

CPC分类号： B41J2/473 ,  B41J2/455 ,  G02B5/005 ,  G02B26/124

摘要： A light source unit includes a surface-emitting laser array including light emitting units; and an apertured member provided on a light path of light beams emitted from the surface-emitting laser array, the apertured member including an aperture. In at least one direction, an intensity distribution of interference patterns caused by the light beams passing through the aperture includes an equal number of crests and troughs.

摘要翻译： 光源单元包括包括发光单元的表面发射激光器阵列; 以及设置在从所述表面发射激光器阵列发射的光束的光路上的有孔构件，所述有孔构件包括孔。 在至少一个方向上，由穿过孔径的光束引起的干涉图案的强度分布包括相等数量的波峰和波谷。

公开(公告)号：US10039452B2

公开(公告)日：2018-08-07

申请号：US14913754

申请日：2014-09-26

申请人： Toshihiro Ishii ,  Yoichiro Takahashi ,  Satoru Sugawara ,  Takeaki Shimokawa ,  Okito Yamashita ,  Masaaki Sato

发明人： Toshihiro Ishii ,  Yoichiro Takahashi ,  Satoru Sugawara ,  Takeaki Shimokawa ,  Okito Yamashita ,  Masaaki Sato

IPC分类号： A61B5/00 ,  A61B5/1455 ,  A61B5/026 ,  A61B5/16 ,  G01N21/01

摘要： An optical sensor includes an irradiation system including at least one light irradiator to irradiate light onto an object under test; and a detection system detecting the light that is irradiated from the irradiation system and is propagated in the object under test. Further, the light irradiator irradiates non-parallel plural light beams on a same position of the object under test.

公开(公告)号：US07978739B2

公开(公告)日：2011-07-12

申请号：US12481080

申请日：2009-06-09

申请人： Satoru Sugawara ,  Toshihiro Ishii ,  Kazuhiro Harasaka ,  Shunichi Sato

发明人： Satoru Sugawara ,  Toshihiro Ishii ,  Kazuhiro Harasaka ,  Shunichi Sato

IPC分类号： H01S3/10 ,  H01S5/00

CPC分类号： H01S5/18394 ,  H01S5/0425 ,  H01S5/18311 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/3202 ,  H01S5/423 ,  H01S2301/18

摘要： In a surface emitting laser element, on an inclined substrate, a resonator structural body including an active layer, and a lower semiconductor DBR and an upper semiconductor DBR sandwiching the resonator structural body are stacked. A shape of a current passing-through region in an oxide confinement structure of the upper semiconductor DBR is symmetrical to an axis passing through a center of the current passing-through region parallel to an X axis and symmetrical to an axis passing through the center of the current passing-through region parallel to a Y axis, and a thickness of an oxidized layer surrounding the current passing-through region is greater in the +Y direction than in the +X and −X directions. An opening width of a light outputting section in the X axis direction is smaller than another opening width of the light outputting section in the Y axis direction.

摘要翻译： 在表面发射激光器元件中，在倾斜衬底上堆叠包括有源层的谐振器结构体和夹持谐振器结构体的下半导体DBR和上半导体DBR。 上半导体DBR的氧化物限制结构中的电流通过区域的形状与通过与X轴平行的电流通过区域的中心的轴对称，并且与穿过中心的轴对称 电流通过区域平行于Y轴，并且围绕电流通过区域的氧化层的厚度在+ Y方向上比在+ X和-X方向上大。 光轴输出部的X轴方向的开口宽度比Y轴方向的光输出部的另一开口宽度小。

公开(公告)号：US08705585B2

公开(公告)日：2014-04-22

申请号：US13866445

申请日：2013-04-19

申请人： Shunichi Sato ,  Akihiro Itoh ,  Satoru Sugawara ,  Hiroyoshi Shouji

发明人： Shunichi Sato ,  Akihiro Itoh ,  Satoru Sugawara ,  Hiroyoshi Shouji

IPC分类号： H01S5/02 ,  H01S5/343 ,  H01S5/183 ,  H01S5/40

CPC分类号： H01S5/18 ,  B82Y20/00 ,  H01S5/0203 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/2213 ,  H01S5/3434 ,  H01S5/423 ,  H01S2302/00

摘要： A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

摘要翻译： 表面发射激光器阵列包括多个表面发射激光器元件。 每个表面发射激光器元件包括形成在基板上的第一反射层，与第一反射层接触并且包含有源层的谐振器，以及形成在第一反射层上并与谐振器接触的第二反射层。 第二反射层包含选择氧化层。 第一反射层在活性层侧至少包含具有等于或大于包含在第二反射层中的选择性氧化层的氧化速率的氧化速率的低折射率层。 谐振器由至少含有In的AlGaInPAs基材制成。 台面结构的底部位于选择性氧化层的下方并位于第一反射层之上。

公开(公告)号：US08594146B2

公开(公告)日：2013-11-26

申请号：US12865951

申请日：2009-02-09

申请人： Naoto Jikutani ,  Satoru Sugawara ,  Shunichi Sato

发明人： Naoto Jikutani ,  Satoru Sugawara ,  Shunichi Sato

IPC分类号： H01S5/00

CPC分类号： B41J2/45 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/423 ,  H01S2301/166 ,  H04N1/113 ,  H04N1/1215

摘要： A surface emitting laser element is disclosed. The surface emitting laser element includes a resonator structural body including an active layer, first and second semiconductor distributed Bragg reflectors which sandwich the resonator structural body, and a confinement structure which can confine an injection current and a lateral mode of oscillation light at the same time by being formed with selective oxidation of a layer to be selectively oxidized containing aluminum in the first semiconductor distributed Bragg reflector. A thickness of the layer to be selectively oxidized is 28 nm, and a temperature when an oscillation threshold current becomes a minimum value is approximately 17° C.

摘要翻译： 公开了一种表面发射激光器元件。 表面发射激光元件包括具有活性层的谐振器结构体，夹着谐振器结构体的第一和第二半导体分布布拉格反射器，以及同时限制注入电流和侧向振荡光模式的约束结构 通过在第一半导体分布布拉格反射器中通过选择性氧化含有铝的选择性氧化而含有铝。 要选择性氧化的层的厚度为28nm，振荡阈值电流变为最小值时的温度约为17℃。

公开(公告)号：US20120121297A1

公开(公告)日：2012-05-17

申请号：US13386725

申请日：2010-09-14

申请人： Naoto Jikutani ,  Kazuhiro Harasaka ,  Satoru Sugawara ,  Shunichi Sato

发明人： Naoto Jikutani ,  Kazuhiro Harasaka ,  Satoru Sugawara ,  Shunichi Sato

IPC分类号： G03G15/04 ,  H01S5/42

CPC分类号： H01S5/18313 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/18327 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/2009 ,  H01S5/3054 ,  H01S5/3202 ,  H01S5/3406 ,  H01S5/423 ,  H01S2301/166

摘要： A surface-emitting laser includes a substrate; a lower semiconductor multilayer film reflector disposed on the substrate; a resonator structure including an active layer and disposed on the lower semiconductor multilayer film reflector; and an upper semiconductor multilayer film reflector disposed on the resonator structure. The second semiconductor multilayer film reflector includes a confinement structure in which a current passage region is surrounded by an oxidized portion of a selectively oxidized layer containing aluminum. An emission region includes a central portion and a peripheral portion, the peripheral portion being covered with a transparent dielectric film whose reflectivity is lower than a reflectivity of the central portion. The selectively oxidized layer has a thickness in a range from 30 nm to 40 nm. The temperature at which an oscillation threshold current is minimized is 60° C. or lower.

摘要翻译： 表面发射激光器包括基板; 设置在所述基板上的下半导体多层膜反射器; 包括有源层并设置在下半导体多层膜反射器上的谐振器结构; 以及设置在谐振器结构上的上半导体多层膜反射器。 第二半导体多层膜反射器包括限制结构，其中电流通道区域被包含铝的选择性氧化层的氧化部分包围。 发射区域包括中心部分和周边部分，周边部分被反射率低于中心部分的反射率的透明电介质膜覆盖。 选择性氧化层的厚度为30nm〜40nm。 振荡阈值电流最小化的温度为60℃以下。

公开(公告)号：US20090295902A1

公开(公告)日：2009-12-03

申请号：US12090467

申请日：2007-08-20

申请人： Shunichi Sato ,  Akihiro Itoh ,  Satoru Sugawara ,  Hiroyoshi Shouji

发明人： Shunichi Sato ,  Akihiro Itoh ,  Satoru Sugawara ,  Hiroyoshi Shouji

IPC分类号： B41J2/435 ,  H01S5/183 ,  H01S3/10 ,  H01S5/187 ,  H01L21/00

CPC分类号： H01S5/18 ,  B82Y20/00 ,  H01S5/0203 ,  H01S5/18313 ,  H01S5/18358 ,  H01S5/2213 ,  H01S5/3434 ,  H01S5/423 ,  H01S2302/00

摘要： A surface-emitting laser array includes a plurality of surface-emitting laser elements. Each surface-emitting laser element includes a first reflection layer formed on a substrate, a resonator formed in contact with the first reflection layer and containing an active layer, and a second reflection layer formed over the first reflection layer and in contact with the resonator. The second reflection layer contains a selective oxidation layer. The first reflection layer contains on the active layer side at least a low refractive index layer having an oxidation rate equivalent to or larger than an oxidation rate of a selective oxidation layer contained in the second reflection layer. The resonator is made of an AlGaInPAs base material containing at least In. A bottom of a mesa structure is located under the selective oxidation layer and over the first reflection layer.

摘要翻译： 表面发射激光器阵列包括多个表面发射激光器元件。 每个表面发射激光器元件包括形成在基板上的第一反射层，与第一反射层接触并且包含有源层的谐振器，以及形成在第一反射层上并与谐振器接触的第二反射层。 第二反射层包含选择氧化层。 第一反射层在活性层侧至少包含具有等于或大于包含在第二反射层中的选择性氧化层的氧化速率的氧化速率的低折射率层。 谐振器由至少含有In的AlGaInPAs基材制成。 台面结构的底部位于选择性氧化层的下方并位于第一反射层之上。

公开(公告)号：US07330157B2

公开(公告)日：2008-02-12

申请号：US11486231

申请日：2006-07-12

申请人： Satoru Sugawara

发明人： Satoru Sugawara

IPC分类号： H01Q9/00

CPC分类号： H01Q9/28 ,  H01Q3/242

摘要： This patent specification describes an antenna device which includes a non-directional antenna having a radiating element and a ground plate, a coaxial line configured to feed an electromagnetic power to the non-directional antenna, a dielectric film arranged on the ground plate, including a dielectric material, a short circuit line arranged on the dielectric film, formed of a conductive pattern and configured to connect an inner conductor of the coaxial line to an outer conductor of the coaxial line and a switch arranged at a portion of the short circuit line to switch a state between a non-shorted state and a shorted state.

摘要翻译： 该专利说明书描述了一种天线装置，其包括具有辐射元件和接地板的非定向天线，配置为向非定向天线馈送电磁功率的同轴线，布置在接地板上的电介质膜，包括 介电材料，布置在电介质膜上的短路线，由导电图案形成，并且被配置为将同轴线的内导体连接到同轴线的外导体，以及布置在短路线的一部分上的开关 在非短路状态和短路状态之间切换状态。