利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

233 条记录 (耗时 0.035 秒)

    Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus
    2.
    发明授权
    Surface emitting laser element, surface emitting laser array, optical scanning device, and image forming apparatus 有权
    表面发射激光元件，表面发射激光器阵列，光学扫描装置和成像装置

    公开(公告)号：US08594146B2

    公开(公告)日：2013-11-26

    申请号：US12865951

    申请日：2009-02-09

    申请人： Naoto Jikutani ,  Satoru Sugawara ,  Shunichi Sato

    发明人： Naoto Jikutani ,  Satoru Sugawara ,  Shunichi Sato

    IPC分类号： H01S5/00

    CPC分类号： B41J2/45 ,  H01S5/0021 ,  H01S5/18311 ,  H01S5/18344 ,  H01S5/18358 ,  H01S5/423 ,  H01S2301/166 ,  H04N1/113 ,  H04N1/1215

    摘要： A surface emitting laser element is disclosed. The surface emitting laser element includes a resonator structural body including an active layer, first and second semiconductor distributed Bragg reflectors which sandwich the resonator structural body, and a confinement structure which can confine an injection current and a lateral mode of oscillation light at the same time by being formed with selective oxidation of a layer to be selectively oxidized containing aluminum in the first semiconductor distributed Bragg reflector. A thickness of the layer to be selectively oxidized is 28 nm, and a temperature when an oscillation threshold current becomes a minimum value is approximately 17° C.

    摘要翻译： 公开了一种表面发射激光器元件。 表面发射激光元件包括具有活性层的谐振器结构体，夹着谐振器结构体的第一和第二半导体分布布拉格反射器，以及同时限制注入电流和侧向振荡光模式的约束结构 通过在第一半导体分布布拉格反射器中通过选择性氧化含有铝的选择性氧化而含有铝。 要选择性氧化的层的厚度为28nm，振荡阈值电流变为最小值时的温度约为17℃。

    SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS
    3.
    发明申请
    SURFACE-EMITTING LASER, SURFACE-EMITTING LASER ARRAY, OPTICAL SCANNING APPARATUS AND IMAGE FORMING APPARATUS 有权
    表面发射激光，表面发射激光阵列，光学扫描装置和图像形成装置

    公开(公告)号：US20120121297A1

    公开(公告)日：2012-05-17

    申请号：US13386725

    申请日：2010-09-14

    申请人： Naoto Jikutani ,  Kazuhiro Harasaka ,  Satoru Sugawara ,  Shunichi Sato

    发明人： Naoto Jikutani ,  Kazuhiro Harasaka ,  Satoru Sugawara ,  Shunichi Sato

    IPC分类号： G03G15/04 ,  H01S5/42

    CPC分类号： H01S5/18313 ,  B82Y20/00 ,  H01S5/0014 ,  H01S5/18327 ,  H01S5/1835 ,  H01S5/18355 ,  H01S5/18369 ,  H01S5/18394 ,  H01S5/2009 ,  H01S5/3054 ,  H01S5/3202 ,  H01S5/3406 ,  H01S5/423 ,  H01S2301/166

    摘要： A surface-emitting laser includes a substrate; a lower semiconductor multilayer film reflector disposed on the substrate; a resonator structure including an active layer and disposed on the lower semiconductor multilayer film reflector; and an upper semiconductor multilayer film reflector disposed on the resonator structure. The second semiconductor multilayer film reflector includes a confinement structure in which a current passage region is surrounded by an oxidized portion of a selectively oxidized layer containing aluminum. An emission region includes a central portion and a peripheral portion, the peripheral portion being covered with a transparent dielectric film whose reflectivity is lower than a reflectivity of the central portion. The selectively oxidized layer has a thickness in a range from 30 nm to 40 nm. The temperature at which an oscillation threshold current is minimized is 60° C. or lower.

    摘要翻译： 表面发射激光器包括基板; 设置在所述基板上的下半导体多层膜反射器; 包括有源层并设置在下半导体多层膜反射器上的谐振器结构; 以及设置在谐振器结构上的上半导体多层膜反射器。 第二半导体多层膜反射器包括限制结构，其中电流通道区域被包含铝的选择性氧化层的氧化部分包围。 发射区域包括中心部分和周边部分，周边部分被反射率低于中心部分的反射率的透明电介质膜覆盖。 选择性氧化层的厚度为30nm〜40nm。 振荡阈值电流最小化的温度为60℃以下。

    Surface-emitting laser, surface-emitting laser array, optical scanning device, and image forming apparatus
    10.
    发明授权
    Surface-emitting laser, surface-emitting laser array, optical scanning device, and image forming apparatus 有权
    表面发射激光器，表面发射激光器阵列，光学扫描装置和成像装置

    公开(公告)号：US08111725B2

    公开(公告)日：2012-02-07

    申请号：US12464408

    申请日：2009-05-12

    申请人： Toshihiro Ishii ,  Kengo Makita ,  Naoto Jikutani ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Satoru Sugawara

    发明人： Toshihiro Ishii ,  Kengo Makita ,  Naoto Jikutani ,  Kazuhiro Harasaka ,  Shunichi Sato ,  Satoru Sugawara

    IPC分类号： H01S5/00

    CPC分类号： H01S5/18355 ,  G03G15/04072 ,  G03G15/0435 ,  G03G2215/0404 ,  H01S5/18311 ,  H01S5/3202 ,  H01S5/423

    摘要： A disclosed surface-emitting laser includes a substrate and multiple semiconductor layers stacked on the substrate. A normal of the principal plane of the substrate is inclined with respect to one of crystal orientations toward one of crystal orientations . The semiconductor layers include a resonator structure including an active layer; and a semiconductor multilayer mirror stacked on the resonator structure. The semiconductor multilayer mirror includes a confined structure where a current passage area is surrounded by an oxidized area including at least an oxide generated by oxidation of a part of a selective oxidation layer containing aluminum. A strain field caused by the oxidation is present at least in a part of the vicinity of the oxidized area. In the strain field, the amount of strain in a first axis direction is different from the amount of strain in a second axis direction.

    摘要翻译： 公开的表面发射激光器包括衬底和堆叠在衬底上的多个半导体层。 衬底的主平面的法线相对于晶体取向<1 0 0>之一朝向晶体取向<11 1>之一倾斜。 半导体层包括包括有源层的谐振器结构; 以及堆叠在谐振器结构上的半导体多层反射镜。 半导体多层反射镜包括限制结构，其中电流通道区域被氧化区域所包围，所述氧化区域至少包括由含有铝的选择氧化层的一部分的氧化而产生的氧化物。 氧化引起的应变场至少存在于氧化区附近的一部分。 在应变场中，第一轴方向的应变量与第二轴方向的应变量不同。