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公开(公告)号：US5079603A
公开(公告)日：1992-01-07
申请号：US517386
申请日：1990-04-30
申请人： Kazuhiro Komori , Satoshi Meguro , Takaaki Hagiwara , Hitoshi Kume , Toshihisa Tsukada , Hideaki Yamamoto
发明人： Kazuhiro Komori , Satoshi Meguro , Takaaki Hagiwara , Hitoshi Kume , Toshihisa Tsukada , Hideaki Yamamoto
IPC分类号： H01L27/112 , H01L21/8246 , H01L21/8247 , H01L27/06 , H01L27/10 , H01L27/105 , H01L27/115 , H01L29/78 , H01L29/788 , H01L29/792
CPC分类号： H01L29/7886 , H01L27/105 , H01L27/0688
摘要： This invention discloses an EEPROM which increases an erasing voltage V.sub.pp to be applied during a data write cycle by increasing an avalanche breakdown voltage between a source region and a semiconductor substrate in the memory cell transistor in order to improve the erasing efficiency, and employs a structure which strengthens the electric field at the edge of a drain region in order to let hot carriers be easily generated and to thereby improve writing efficiency.
摘要翻译： 本发明公开了一种EEPROM，其通过增加存储单元晶体管中的源极区域和半导体衬底之间的雪崩击穿电压来增加在数据写入周期期间施加的擦除电压Vpp，以提高擦除效率，并采用结构 这加强了漏极区域的边缘处的电场，以便容易地产生热载流子，从而提高写入效率。
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公开(公告)号：US4996571A
公开(公告)日：1991-02-26
申请号：US375956
申请日：1989-07-06
申请人： Hitoshi Kume , Yoshiaki Kamigaki , Tetsuo Adachi , Toshihisa Tsukada , Kazuhiro Komori , Toshiaki Nishimoto , Tadashi Muto , Toshiko Koizumi
发明人： Hitoshi Kume , Yoshiaki Kamigaki , Tetsuo Adachi , Toshihisa Tsukada , Kazuhiro Komori , Toshiaki Nishimoto , Tadashi Muto , Toshiko Koizumi
IPC分类号： G11C17/00 , G11C16/04 , G11C16/14 , H01L29/788
CPC分类号： G11C16/3477 , G11C16/14 , H01L29/7884
摘要： The invention relates to a tunnel erasing device for a non-volatile semiconductor memory device comprising a source region and a drain region, a floating gate electrode having a part superposed on at least one of them through a gate insulating layer, and a control gate electrode disposed over the floating gate electrode through an interlayer insulating layer and is characterized as having a preliminary erasing operation in which a voltage is so applied to at least one of the source or drain region, with the control gate electrode grounded, that a relatively lower voltage than a predetermined voltage is applied preliminarily prior to applying thereto the predetermined voltage.
摘要翻译： 本发明涉及一种用于非易失性半导体存储器件的隧道擦除装置，包括源极区和漏极区，通过栅极绝缘层将具有重叠在其中的至少一个上的部分的浮栅电极和控制栅电极 通过层间绝缘层设置在浮栅上，并且其特征在于具有预先擦除操作，其中电压被施加到源区或漏区中的至少一个，控制栅电极接地，相对较低的电压 预先施加预定电压之前施加预定电压。
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公开(公告)号：US4990981A
公开(公告)日：1991-02-05
申请号：US296811
申请日：1989-01-13
申请人： Yasuo Tanaka , Haruo Matsumaru , Hideaki Yamamoto , Toshihisa Tsukada , Ken Tsutsui , Yoshiyuki Kaneko
发明人： Yasuo Tanaka , Haruo Matsumaru , Hideaki Yamamoto , Toshihisa Tsukada , Ken Tsutsui , Yoshiyuki Kaneko
IPC分类号： G02F1/136 , G02F1/1368 , H01L29/786
CPC分类号： G02F1/1368 , H01L29/78633 , H01L29/78669
摘要： A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.
摘要翻译： 公开了一种薄膜晶体管，其包括设置在预定衬底上的栅电极，栅极绝缘层，半导体层，源电极和漏电极，并且其构造使得半导体层不是“ 存在于与所述基板平行的强电场的任何区域中。 除此之外，还公开了使用该薄膜晶体管的液晶显示装置。 根据本发明的薄膜晶体管由于光电流而导致的关断电平的增加很小，并且适用于驱动液晶显示装置中的像素。
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公开(公告)号：US4955697A
公开(公告)日：1990-09-11
申请号：US183141
申请日：1988-04-19
IPC分类号： G02F1/1362 , G09G3/36
CPC分类号： G02F1/136213 , G09G3/3648 , G09G3/3659 , G09G2300/043 , G09G2320/0204 , G09G2320/0219 , G09G2320/0247
摘要： A liquid crystal display panel and a method of driving the display panel are disclosed. The display panel and the driving method can reduce the leakage of a gate driving voltage to a first pixel electrode due to the parasitic capacitance of a thin film transistor, and can lessen an adverse effect of noise which is generated at a second pixel electrode by cancelling out the capacitive coupling to the first pixel electrode, on an image displayed by the display panel.
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公开(公告)号：US4683487A
公开(公告)日：1987-07-28
申请号：US795465
申请日：1985-11-06
IPC分类号： H01L21/331 , H01L29/06 , H01L29/20 , H01L29/417 , H01L29/423 , H01L29/73 , H01L29/737 , H01L29/72
CPC分类号： H01L29/0642 , H01L29/41708 , H01L29/42304 , H01L29/73 , H01L29/7371
摘要： A collector lead-out portion and a base lead-out portion are formed so as to oppose to each other in such a manner that active regions including a collector, a base and an emitter are sandwiched therebetween. The collector lead-out portion and the base lead-out portion are formed by ion implantation or selective epitaxial growth. Thus, a planar type heterojunction bipolar transistor capable of a high density of integration is formed.
摘要翻译： 以这样的方式形成集电体引出部分和基极引出部分，以便将包括集电极，基极和发射极的有源区夹在其间的方式彼此相对。 集电极引出部分和基极引出部分通过离子注入或选择性外延生长形成。 因此，形成了具有高密度集成度的平面型异质结双极晶体管。
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公开(公告)号：US4618873A
公开(公告)日：1986-10-21
申请号：US621683
申请日：1984-06-18
申请人： Akira Sasano , Kouichi Seki , Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada
发明人： Akira Sasano , Kouichi Seki , Hideaki Yamamoto , Toru Baji , Toshihisa Tsukada
IPC分类号： H01L21/02 , H01L21/822 , H01L21/84 , H01L27/04 , H01L27/146 , H01L29/45 , H01L31/02 , H01L29/78
CPC分类号： H01L28/20 , H01L21/84 , H01L27/14643 , H01L29/458
摘要： In a thin film device having a hydrogenated amorphous silicon film, a metal layer is formed on the hydrogenated amorphous silicon film and then the metal layer is removed. A resulting reaction layer formed on the hydrogenated amorphous silicon film is used as a resistor.
摘要翻译： 在具有氢化非晶硅膜的薄膜器件中，在氢化非晶硅膜上形成金属层，然后除去金属层。 形成在氢化非晶硅膜上的反应层用作电阻。
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公开(公告)号：US4412900A
公开(公告)日：1983-11-01
申请号：US357076
申请日：1982-03-11
IPC分类号： H01L31/10 , H01L27/146 , C23C15/00
CPC分类号： H01L27/14665 , H01L27/14603 , H01L27/14621 , H01L27/14692
摘要： A method of manufacturing photosensors is disclosed which comprises the steps of forming a photo-conductor film made chiefly of silicon and containing hydrogen on a desired substrate, forming a transparent conductive film on the photo-conductor film by sputtering, and heating the photosensor having the sputtered transparent conductive film at least at 140.degree. C. and not higher than 280.degree. C. The heat treatment is performed preferably at a temperature between 170.degree. to 250.degree. C., at which greater effect will be provided. This heat treatment remarkably improves the photo-response speed.
摘要翻译： 公开了一种制造光电传感器的方法，其包括以下步骤：在期望的衬底上形成主要由硅构成并含有氢的光导体膜，通过溅射在光致导体膜上形成透明导电膜，并加热具有 溅射的透明导电膜至少在140℃且不高于280℃。优选在170-250℃的温度下进行热处理，在该温度下将提供更大的效果。 这种热处理显着提高了光响应速度。
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公开(公告)号：US4249106A
公开(公告)日：1981-02-03
申请号：US92021
申请日：1979-11-07
申请人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
发明人： Eiichi Maruyama , Saburo Ataka , Kiyohisa Inao , Yoshinori Imamura , Toshihisa Tsukada , Yukio Takasaki , Tadaaki Hirai
摘要： A radiation sensitive screen comprising a crystalline silicon substrate which is located on a side of incidence of radiation, and an amorphous silicon film which contains hydrogen and which is located on the opposite side of the substrate to the side of the incidence of the radiation. The radiation sensitive screen of this invention can be manufactured by a simple method, and can achieve a high resolution. It is useful for the target of an image pickup tube, the electron bombardment target of an X-ray fluorescence multiplier tube, etc.
摘要翻译： 一种辐射敏感屏幕，其包括位于辐射入射侧的晶体硅衬底和包含氢的位于辐射入射侧的衬底相对侧上的非晶硅膜。 本发明的辐射敏感屏可以通过简单的方法制造，并且可以实现高分辨率。 对于图像拾取管的目标，X射线荧光倍增管的电子轰击靶等等是有用的
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公开(公告)号：US4232219A
公开(公告)日：1980-11-04
申请号：US15615
申请日：1979-02-27
CPC分类号： H04N1/486
摘要： A photosensor including a fiber substrate having a light receiving window formed in a surface thereof spaced from an information surface to be read, a bundle of optical fibers disposed in the fiber substrate and positioned in the light receiving window. A plurality of color filters of different characteristics are disposed on an end face of the bundle of optical fibers, and a plurality of arrays of photosensitive elements corresponding to the color filters are also provided. The arrays of photosensitive elements are integrally provided with the fiber substrate and disposed in the region of the end face of the bundle of the optical fibers farthest away from the information surface.
摘要翻译： 一种光传感器，包括具有形成在与要读取的信息表面间隔开的表面中的光接收窗口的光纤基板，设置在光纤基板中并位于光接收窗口中的一束光纤。 具有不同特性的多个滤色器设置在光纤束的端面上，并且还提供了与滤色器对应的多个感光元件阵列。 感光元件阵列与光纤基片一体地设置，并且设置在离信息表面最远的光纤束的端面的区域中。
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公开(公告)号：US06483660B1
公开(公告)日：2002-11-19
申请号：US08992083
申请日：1997-12-17
IPC分类号： G11B554
CPC分类号： G11B25/043
摘要： A magnetic disk unit of form factor size with a low power consumption, a short average seek time and a high performance. The unit includes at least two spindles for supporting and rotating magnetic disks. Specifically, two 1.3-inch disks, three 1.0-inch disks or four 0.7-inch disks are arranged in a housing originally intended for a 1.8-inch magnetic disk. The unit further includes a device for writing and reading information while selecting a spindle. The card-type disk unit thus can be reduced in thickness, with a smaller power consumption for starting the disk rotation and further with an improved average seek velocity.
摘要翻译： 具有功耗低，平均寻道时间短，性能好的外形尺寸的磁盘单元。 该单元包括用于支撑和旋转磁盘的至少两个主轴。 具体来说，两个1.3英寸磁盘，三个1.0英寸磁盘或四个0.7英寸磁盘布置在原来用于1.8英寸磁盘的外壳中。 该单元还包括用于在选择主轴时写入和读取信息的装置。 因此，卡型盘单元的厚度可以减小，具有较小的功率消耗用于启动盘旋转，并且还具有改进的平均寻道速度。
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