公开(公告)号：US20070018327A1

公开(公告)日：2007-01-25

申请号：US11529481

申请日：2006-09-29

申请人： Tsuyoshi Fujiwara ,  Masahiro Ushiyama ,  Katsuhiko Ichinose ,  Naohumi Ohashi ,  Tetsuo Saito

发明人： Tsuyoshi Fujiwara ,  Masahiro Ushiyama ,  Katsuhiko Ichinose ,  Naohumi Ohashi ,  Tetsuo Saito

IPC分类号： H01L23/52

CPC分类号： H01L21/76834 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/76816 ,  H01L21/76828 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823828 ,  H01L21/823871 ,  H01L24/11 ,  H01L27/0629 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10888 ,  H01L27/10894 ,  H01L28/24 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

摘要翻译： 在制造具有高性能和高可靠性的半导体器件中，在400℃的衬底温度下形成用于自对准的氮化硅膜17，该膜形成为覆盖MISFET的栅电极。 以上，使用包括甲硅烷和氮的原料气体的等离子体CVD。 构成钝化膜的氮化硅膜44通过使用包括甲硅烷，氨和氮的原料气体的等离子体CVD在基板温度约350℃下形成。 氮化硅膜17中所含的氢含量小于氮化硅膜44中所含的氢含量，可以抑制从氮化硅膜17释放氢。

公开(公告)号：US07163886B2

公开(公告)日：2007-01-16

申请号：US10917289

申请日：2004-08-13

申请人： Tsuyoshi Fujiwara ,  Masahiro Ushiyama ,  Katsuhiko Ichinose ,  Naohumi Ohashi ,  Tetsuo Saito

发明人： Tsuyoshi Fujiwara ,  Masahiro Ushiyama ,  Katsuhiko Ichinose ,  Naohumi Ohashi ,  Tetsuo Saito

IPC分类号： H01L21/4763 ,  H01L21/44

CPC分类号： H01L21/76834 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/3185 ,  H01L21/76816 ,  H01L21/76828 ,  H01L21/76895 ,  H01L21/76897 ,  H01L21/823828 ,  H01L21/823871 ,  H01L24/11 ,  H01L27/0629 ,  H01L27/1052 ,  H01L27/10814 ,  H01L27/10888 ,  H01L27/10894 ,  H01L28/24 ,  H01L2224/05008 ,  H01L2224/05009 ,  H01L2224/05024 ,  H01L2224/05124 ,  H01L2224/05166 ,  H01L2224/05569 ,  H01L2224/05572 ,  H01L2224/05644 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： In the manufacture of a semiconductor device having a high-performance and high-reliability, a silicon nitride film 17 for self alignment, which film is formed to cover the gate electrode of a MISFET, is formed at a substrate temperature of 400° C. or greater by plasma CVD using a raw material gas including monosilane and nitrogen. A silicon nitride film 44 constituting a passivation film is formed at a substrate temperature of about 350° C. by plasma CVD using a raw material gas including monosilane, ammonia and nitrogen. The hydrogen content contained in the silicon nitride film 17 is smaller than that contained in the silicon nitride film 44, making it possible to suppress hydrogen release from the silicon nitride film 17.

公开(公告)号：US07042095B2

公开(公告)日：2006-05-09

申请号：US10387504

申请日：2003-03-14

申请人： Junji Noguchi ,  Tsuyoshi Fujiwara

发明人： Junji Noguchi ,  Tsuyoshi Fujiwara

IPC分类号： H01L21/88 ,  H01L23/48

CPC分类号： H01L23/53295 ,  H01L21/76801 ,  H01L21/7681 ,  H01L21/76811 ,  H01L21/7682 ,  H01L21/76829 ,  H01L21/7685 ,  H01L21/76885 ,  H01L23/5222 ,  H01L23/53238 ,  H01L2924/0002 ,  Y10S257/914 ,  H01L2924/00

摘要： Provided are a semiconductor device comprising a semiconductor substrate, a first insulating film formed thereover, interconnects formed over the first insulating film and having copper as a main component, a second insulating film formed over the upper surface and side surfaces of each of the interconnects and over the first insulating film and having a function of suppressing or preventing copper diffusion, and a third insulating film formed over the second insulating film and having a dielectric constant lower than that of the second insulating film; and a method of manufacturing the semiconductor device. This invention makes it possible to improve dielectric breakdown strength between copper interconnects and reduce capacitance between the copper interconnects.

摘要翻译： 提供了一种半导体器件，包括半导体衬底，形成在其上的第一绝缘膜，形成在第一绝缘膜上并具有铜作为主要部件的互连，形成在每个互连的上表面和侧表面上的第二绝缘膜， 超过第一绝缘膜并具有抑制或防止铜扩散的功能;以及第三绝缘膜，形成在第二绝缘膜上并具有低于第二绝缘膜的介电常数的介电常数; 以及半导体器件的制造方法。 本发明使得可以提高铜互连之间的介电击穿强度并降低铜互连之间的电容。

公开(公告)号：US20050026358A1

公开(公告)日：2005-02-03

申请号：US10930845

申请日：2004-09-01

申请人： Tsuyoshi Fujiwara ,  Katsuyuki Asaka ,  Yasuhiro Nariyoshi ,  Yoshinori Hoshino ,  Kazutoshi Oomori

发明人： Tsuyoshi Fujiwara ,  Katsuyuki Asaka ,  Yasuhiro Nariyoshi ,  Yoshinori Hoshino ,  Kazutoshi Oomori

IPC分类号： H01L21/02 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  H01L21/8242 ,  H01L23/522 ,  H01L27/108

CPC分类号： H01L27/10885 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/02318 ,  H01L21/31604 ,  H01L21/31612 ,  H01L21/32051 ,  H01L21/76801 ,  H01L21/76828 ,  H01L21/76832 ,  H01L21/76837 ,  H01L27/10814 ,  H01L28/84 ,  H01L28/90

摘要： It is desirable to prevent breakage and separation of wiring of a semiconductor integrated circuit device, such as a bit-line of a DRAM. To accomplish this, a high density plasma silicon oxide film is deposited on a bit-line that is connected to the source and drain region of a memory cell selection MISFET of a DRAM memory cell by means of a high density plasma CVD technique, and the structure is subjected to RTA (heat treatment) at 750° C. The surface is polished, and then a capacitor, to be connected to the other of the source and drain region of the memory cell selection MISFET, is formed. As a result, even when a tantalum oxide film, that serves as a capacitance insulating film of the capacitor, is subjected to heat treatment, the film stress exerted on the bit-line is reduced, and breakage and separation of the bit-line are prevented.

摘要翻译： 期望防止诸如DRAM的位线的半导体集成电路器件的布线的断裂和分离。 为了实现这一点，通过高密度等离子体CVD技术将高密度等离子体氧化硅膜沉积在与DRAM存储单元的存储单元选择MISFET的源极和漏极区连接的位线上， 结构在750℃下进行RTA（热处理）。抛光表面，然后形成要连接到存储单元选择MISFET的源极和漏极区域中的另一个的电容器。 结果，即使当用作电容器的电容绝缘膜的氧化钽膜进行热处理时，施加在位线上的膜应力减小，位线的断裂和分离是 防止了

公开(公告)号：US4245245A

公开(公告)日：1981-01-13

申请号：US654721

申请日：1976-02-02

申请人： Katsuaki Matsumoto ,  Yoshifumi Saeki ,  Osamu Tazawa ,  Minoru Kosaka ,  Masaki Saito ,  Hiroki Uemura ,  Tetuo Kanazashi ,  Seiji Hashimoto ,  Tsuyoshi Fujiwara ,  Tsutomu Fukui ,  Saburo Takaoka ,  Tsutomu Suzuki ,  Shozo Nakamuta ,  Toshihiko Hosaka ,  Kuniaki Shiratori ,  Youichiro Tsuda ,  Takashi Morii ,  Sumitaka Matsumura ,  Morihisa Oka

发明人： Katsuaki Matsumoto ,  Yoshifumi Saeki ,  Osamu Tazawa ,  Minoru Kosaka ,  Masaki Saito ,  Hiroki Uemura ,  Tetuo Kanazashi ,  Seiji Hashimoto ,  Tsuyoshi Fujiwara ,  Tsutomu Fukui ,  Saburo Takaoka ,  Tsutomu Suzuki ,  Shozo Nakamuta ,  Toshihiko Hosaka ,  Kuniaki Shiratori ,  Youichiro Tsuda ,  Takashi Morii ,  Sumitaka Matsumura ,  Morihisa Oka

IPC分类号： H04N7/167 ,  H04N7/171 ,  H04N7/173 ,  H04N7/16 ,  H04N7/00

CPC分类号： H04N7/17309 ,  H04N7/17363 ,  H04N2007/17372

摘要： A two-way CATV system having a substantial number of terminals incorporates a central processor and transmitter system which continually interrogates the terminals at high speed, monitoring changes of usage of premium programs and other data while also permitting central control of access to restricted premium programs. For inexpensive but reliable intercommunication, short, fixed word length digital messages are frequency multiplexed onto the cable in both upstream and downstream directions, and subscriber groups are controllably selected in turn, with each subscriber being scanned in what may be an arbitrary order by transmission of unique private messages which are recognized at the terminal and in response to which previously prepared fixed length messages are immediately transmitted in return. By employing both upstream and downstream messages which are initiated by a series of synchronizing bits and non-ambiguously related subsequent data sequences, and by the provision of means to initiate both downstream and upstream messages of short length without delay, rapid but reliable data interchange is effected despite differences in transmission and response times with different subscribers. Concurrently, terminal status and various special conditions including security alarms are remotely processed at each terminal, and short upstream messages are assembled containing priority selected data to be transmitted in response to an interrogation. The system incorporates additional means for monitoring power status, program selection and authorization and other operating conditions at each terminal effectively to provide accurate and reliable accounting information while preventing unauthorized or improper usage of restricted premium programs.

摘要翻译： 具有大量终端的双向CATV系统包括中央处理器和发射机系统，其以高速度连续询问终端，监视高级节目和其他数据的使用的改变，同时还允许对受限优惠节目的访问的中央控制。 对于廉价但可靠的互通，短，固定字长数字消息在上行和下行两个方向上被频率复用到电缆上，并且用户组可以依次可控地选择，每个用户以任意顺序扫描可以通过传输 在终端被识别并且响应于先前准备好的固定长度的消息被立即发送的唯一私人消息。 通过采用由一系列同步位和非相关相关的后续数据序列发起的上行和下行消息，并且通过提供无延迟地启动短长度的下行和上行消息的装置，快速但可靠的数据交换是 尽管与不同用户的传输和响应时间有差异。 同时，终端状态和包括安全警报在内的各种特殊条件在每个终端进行远程处理，并且组合短的上游消息，其中包含响应于询问要发送的优先选择数据。 该系统包括用于监控每个终端的电源状态，程序选择和授权以及其他操作条件的其他手段，有效地提供准确可靠的会计信息，同时防止未经授权或不正确使用限制性溢价程序。

公开(公告)号：US4205663A

公开(公告)日：1980-06-03

申请号：US921199

申请日：1978-07-03

申请人： Tsuyoshi Fujiwara

发明人： Tsuyoshi Fujiwara

IPC分类号： A61H15/00

CPC分类号： A61H15/00 ,  A61H2015/0021 ,  A61H2205/12

摘要： A device for massaging the sole of foot comprises a plurality of rows of projection rollers having projections extending in substantially radial directions of the respective rollers. The positions of the rollers and the lengths of the projections are so determined that a surface connecting the uppermost points of the projections is raised at the central portion thereof. Such arrangement of the rollers renders the projections as a whole into conformity with the soles of feet, particularly to the arches of feet. One may place both feet on the device and move the feet back and forth in a direction perpendicular to the rows to conduct press massaging on the soles of feet.

摘要翻译： 用于按摩脚底的装置包括多列突出的滚子，其具有在相应的滚子的大致径向方向上延伸的凸起。 辊的位置和突起的长度被确定为连接凸起的最上点的表面在其中心部分处升高。 辊的这种布置使得突出部整体上与脚底，特别是脚的拱形一致。 人们可以将双脚放在设备上，并且在垂直于行的方向上来回移动脚，以对脚底进行按摩按摩。

公开(公告)号：US4109281A

公开(公告)日：1978-08-22

申请号：US787592

申请日：1977-04-14

申请人： Tetsuo Kanazashi ,  Tsuyoshi Fujiwara

发明人： Tetsuo Kanazashi ,  Tsuyoshi Fujiwara

IPC分类号： H04N7/10 ,  H04N7/081 ,  H04N7/167 ,  H04N7/173 ,  H04N1/44

CPC分类号： H04N7/167 ,  H04N7/081

摘要： In a CATV system, a received signal band containing video channels and a data signal at a selected frequency is successively converted in frequency so as to provide a chosen video signal at the frequency of a selected channel. After the first conversion a residual fundamental of the data signal carrier is bandpass filtered, amplified and then demodulated to extract the data signal. The needed filtering and signal processing can thereby be more economically accomplished without adverse effects on adjacent video signal channels.

公开(公告)号：US08522485B2

公开(公告)日：2013-09-03

申请号：US13413142

申请日：2012-03-06

申请人： Chikara Yamashita ,  Akihiro Terai ,  Hiromichi Torihata ,  Tsuyoshi Fujiwara

发明人： Chikara Yamashita ,  Akihiro Terai ,  Hiromichi Torihata ,  Tsuyoshi Fujiwara

IPC分类号： B60J5/04

CPC分类号： B60J5/0402 ,  B60J10/21

摘要： A center-channel protector for a vehicle sash door is arranged between a main sash and a center channel. A body of the protector has an H-shaped upper-end surface which is compatible to cover the upper end of the center channel. The body integrally includes a pair of branch covering portions corresponding to a pair of branch portions constituting the center channel and a middle covering portion disposed between the branch covering portions so as to connect the both branch covering portions therewith. An engaging portion is provided with the body and is mechanically engaged, in a direction intersecting a vertical direction, with an engaged portion which is provided with a center channel side. In collaboration with the engaged portion, the engaging portion constitutes a fastening mechanism by which the protector is fastened on the center channel.

摘要翻译： 主窗框和中央通道之间布置有用于车窗扇门的中心通道保护器。 保护器的主体具有H形的上表面，其兼容以覆盖中心通道的上端。 主体一体地包括一对分支覆盖部分，对应于构成中心通道的一对分支部分，以及设置在分支覆盖部分之间的中间覆盖部分，以便连接两个分支覆盖部分。 接合部设置有主体并且在与垂直方向相交的方向上机械地接合设置有中心通道侧的接合部。 与接合部一起，接合部分构成紧固机构，保护器通过该紧固机构紧固在中心通道上。

公开(公告)号：US08151520B2

公开(公告)日：2012-04-10

申请号：US12330801

申请日：2008-12-09

申请人： Chikara Yamashita ,  Akihiro Terai ,  Hiromichi Torihata ,  Tsuyoshi Fujiwara

发明人： Chikara Yamashita ,  Akihiro Terai ,  Hiromichi Torihata ,  Tsuyoshi Fujiwara

IPC分类号： B60J5/04

CPC分类号： B60J5/0402 ,  B60J10/21

摘要： A center-channel protector for a vehicle sash door is arranged between a main sash and a center channel. A body of the protector has an H-shaped upper-end surface which is compatible to cover the upper end of the center channel. The body integrally includes a pair of branch covering portions corresponding to a pair of branch portions constituting the center channel and a middle covering portion disposed between the branch covering portions so as to connect the both branch covering portions therewith. An engaging portion is provided with the body and is mechanically engaged, in a direction intersecting a vertical direction, with an engaged portion which is provided with a center channel side. In collaboration with the engaged portion, the engaging portion constitutes a fastening mechanism by which the protector is fastened on the center channel.

摘要翻译： 主窗框和中央通道之间布置有用于车窗扇门的中心通道保护器。 保护器的主体具有H形的上表面，其兼容以覆盖中心通道的上端。 主体一体地包括一对分支覆盖部分，对应于构成中心通道的一对分支部分，以及设置在分支覆盖部分之间的中间覆盖部分，以便连接两个分支覆盖部分。 接合部设置有主体并且在与垂直方向相交的方向上机械地接合设置有中心通道侧的接合部。 与接合部一起，接合部分构成紧固机构，保护器通过该紧固机构紧固在中心通道上。

公开(公告)号：US20100090307A1

公开(公告)日：2010-04-15

申请号：US11997436

申请日：2006-08-25

申请人： Satoshi Moriya ,  Toshio Saito ,  Goichi Yokoyama ,  Tsuyoshi Fujiwara ,  Hidenori Sato ,  Nobuaki Miyakawa

发明人： Satoshi Moriya ,  Toshio Saito ,  Goichi Yokoyama ,  Tsuyoshi Fujiwara ,  Hidenori Sato ,  Nobuaki Miyakawa

IPC分类号： H01L29/06 ,  H01L21/76

CPC分类号： H01L21/76898 ,  H01L21/2007 ,  H01L21/76232 ,  H01L21/8221 ,  H01L23/481 ,  H01L24/94 ,  H01L2224/2518 ,  H01L2924/01004 ,  H01L2924/04941 ,  H01L2924/1305 ,  H01L2924/14 ,  H01L2924/00

摘要： A structure obtaining a desired integrated circuit by sticking together a plurality of semiconductor substrates and electrically connecting integrated circuits formed on semiconductor chips of the respective semiconductor substrates is provided, and a penetrating electrode penetrating between a main surface and a rear surface of each of the semiconductor substrates and a penetrating separation portion separating the penetrating electrode are separately arranged. Thereby, after forming an insulation trench portion for formation of the penetrating separation portion on the semiconductor substrate, a MIS·FET is formed, and then, a conductive trench portion for formation of the penetrating electrode can be formed. Therefore, element characteristics of a semiconductor device having a three-dimensional structure can be improved.

摘要翻译： 提供了通过将形成在各个半导体衬底的半导体芯片上的多个半导体衬底和电连接集成电路粘合在一起而获得所需集成电路的结构，并且穿透电极穿透每个半导体衬底的主表面和后表面 分离基板和分离穿透电极的穿透分离部分。 因此，在半导体衬底上形成用于形成穿透分离部分的绝缘沟槽部分之后，形成MIS·FET，然后形成用于形成穿透电极的导电沟槽部分。 因此，可以提高具有三维结构的半导体器件的元件特性。