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公开(公告)号：US08884517B1
公开(公告)日：2014-11-11
申请号：US13274489
申请日：2011-10-17
CPC分类号： F21V29/15 , F21K9/23 , F21K9/90 , F21V29/70 , F21V29/74 , F21V29/83 , F21Y2105/10 , F21Y2115/10
摘要： An lighting source includes a driver for outputting electrical power in response to external electrical power, wherein the driver generates heat in response thereto, a lamp coupled to the driver, for outputting light in response to the electrical power, wherein the lamp generates heat in response thereto, a first heat sink physically coupled to the driver for receiving and dissipating heat there from, a second heat sink physically coupled to the light for receiving heat and dissipating heat there from, and an insulating portion disposed between the first heat sink and the second heat sink, wherein the insulating portion is configured to inhibit heat from the lamp from being transferred to the driver.
摘要翻译： 照明源包括用于响应于外部电力输出电力的驱动器，其中驱动器响应于此而产生热量，连接到驱动器的灯，用于响应于电功率而输出光，其中灯发出响应的热量 物理耦合到驱动器的第一散热器，用于从其接收和散发热量，物理耦合到光的第二散热器，用于接收热量并从中散发热量;以及绝缘部分，设置在第一散热器和第二散热器之间 散热器，其中所述绝缘部分被配置为抑制来自所述灯的热量被传送到所述驱动器。
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公开(公告)号：US08288186B2
公开(公告)日：2012-10-16
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20 , H01L21/301
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
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公开(公告)号：US20120199952A1
公开(公告)日：2012-08-09
申请号：US13346507
申请日：2012-01-09
CPC分类号： H01L21/02433 , H01L21/0237 , H01L21/02458 , H01L21/02499 , H01L21/02507 , H01L21/0254 , H01L21/0262 , H01L21/02631 , H01L29/2003
摘要： A method for growth of indium-containing nitride films is described, particularly a method for fabricating a gallium, indium, and nitrogen containing material. On a substrate having a surface region a material having a first indium-rich concentration is formed, followed by a second thickness of material having a first indium-poor concentration. Then a third thickness of material having a second indium-rich concentration is added to form a sandwiched structure which is thermally processed to cause formation of well-crystallized, relaxed material within a vicinity of a surface region of the sandwich structure.
摘要翻译： 描述了含铟氮化物膜的生长方法，特别是制造镓，铟和含氮材料的方法。 在具有表面区域的基板上形成具有第一富铟浓度的材料，然后形成具有第一贫铟浓度的第二厚度的材料。 然后加入具有第二富铟浓度的第三厚度的材料以形成夹层结构，其被热处理以在夹层结构的表面区域附近形成良好结晶的松弛材料。
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公开(公告)号：US08203153B2
公开(公告)日：2012-06-19
申请号：US12688209
申请日：2010-01-15
CPC分类号： H01L33/20 , H01L33/0079 , H01L33/22 , H01L2933/0083
摘要： Embodiments of the invention include a substrate comprising a host and a seed layer bonded to the host, and a semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region grown over the seed layer. A variation in index of refraction in a direction perpendicular to a growth direction of the semiconductor structure is disposed between the host and the light emitting layer.
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公开(公告)号：US08163575B2
公开(公告)日：2012-04-24
申请号：US11156105
申请日：2005-06-17
IPC分类号： H01L21/00
CPC分类号： C30B29/60 , B82Y20/00 , G02B6/1225 , H01L33/08 , H01L33/18 , H01L33/24 , H01L2933/0083 , H01S5/105 , H01S5/34333
摘要： A photonic crystal is grown within a semiconductor structure, such as a III-nitride structure, which includes a light emitting region disposed between an n-type region and a p-type region. The photonic crystal may be multiple regions of semiconductor material separated by a material having a different refractive index than the semiconductor material. For example, the photonic crystal may be posts of semiconductor material grown in the structure and separated by air gaps or regions of masking material. Growing the photonic crystal, rather than etching a photonic crystal into an already-grown semiconductor layer, avoids damage caused by etching which may reduce efficiency, and provides uninterrupted, planar surfaces on which to form electric contacts.
摘要翻译： 光子晶体在诸如III族氮化物结构的半导体结构内生长，其包括设置在n型区域和p型区域之间的发光区域。 光子晶体可以是由具有与半导体材料不同的折射率的材料分离的半导体材料的多个区域。 例如，光子晶体可以是在结构中生长并由气隙或掩模材料区域分离的半导体材料的柱。 生长光子晶体，而不是将光子晶体蚀刻成已经生长的半导体层，避免了蚀刻造成的损伤，这可能降低效率，并提供不间断的平面，在其上形成电触点。
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36.发明授权Method of forming a composite substrate and growing a III-V light emitting device over the composite substrate 有权形成复合衬底并在复合衬底上生长III-V发光器件的方法公开(公告)号：US08105852B2
公开(公告)日：2012-01-31
申请号：US12688382
申请日：2010-01-15
CPC分类号： H01L33/007 , H01L21/02458
摘要： A method according to embodiments of the invention includes providing a substrate comprising a host and a seed layer bonded to the host. The seed layer comprises a plurality of regions. A semiconductor structure comprising a light emitting layer disposed between an n-type region and a p-type region is grown on the substrate. A top surface of a semiconductor layer grown on the seed layer has a lateral extent greater than each of the plurality of seed layer regions.
摘要翻译： 根据本发明的实施方案的方法包括提供包含与宿主结合的宿主和种子层的底物。 种子层包括多个区域。 在衬底上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在种子层上生长的半导体层的顶表面的横向范围大于多个种子层区域中的每一个。
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公开(公告)号：US20110027975A1
公开(公告)日：2011-02-03
申请号：US12887853
申请日：2010-09-22
IPC分类号： H01L21/20
CPC分类号： H01L21/76256 , C30B25/183 , C30B29/40 , C30B29/403 , H01L21/76254 , H01L33/007 , H01L33/0079
摘要： A substrate including a host and a seed layer bonded to the host is provided, then a semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is grown on the seed layer. In some embodiments, a bonding layer bonds the host to the seed layer. The seed layer may be thinner than a critical thickness for relaxation of strain in the semiconductor structure, such that strain in the semiconductor structure is relieved by dislocations formed in the seed layer, or by gliding between the seed layer and the bonding layer an interface between the two layers. In some embodiments, the host may be separated from the semiconductor structure and seed layer by etching away the bonding layer.
摘要翻译： 提供了包括与主体结合的主体和种子层的基板，然后在种子层上生长包括设置在n型区域和p型区域之间的发光层的半导体结构。 在一些实施方案中，结合层将主体结合到种子层。 种子层可以比用于缓和半导体结构中的应变的临界厚度薄，使得半导体结构中的应变由种子层中形成的位错或通过在种子层和结合层之间滑动而消除， 两层。 在一些实施例中，可以通过蚀刻掉粘合层来将主体与半导体结构和种子层分离。
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38.发明申请公开(公告)号：US20100226404A1
公开(公告)日：2010-09-09
申请号：US12781935
申请日：2010-05-18
CPC分类号： H01L33/18 , H01L25/0756 , H01L33/105 , H01L33/32 , H01L33/405 , H01L33/46 , H01L2924/0002 , H01L2933/0083 , H01L2924/00
摘要： A semiconductor light emitting device includes an in-plane active region that emits linearly-polarized light. An in-plane active region may include, for example, a {11 20} or {10 10} InGaN light emitting layer. In some embodiments, a polarizer oriented to pass light of a polarization of a majority of light emitted by the active region serves as a contact. In some embodiments, two active regions emitting the same or different colored light are separated by a polarizer oriented to pass light of a polarization of a majority of light emitted by the bottom active region, and to reflect light of a polarization of a majority of light emitted by the top active region. In some embodiments, a polarizer reflects light scattered by a wavelength converting layer.
摘要翻译： 半导体发光器件包括发射线偏振光的面内有源区域。 面内有源区可以包括例如{11 20}或{10 10} InGaN发光层。 在一些实施例中，定向为使得由有源区域发射的大部分光的偏振的光通过的偏振片用作接触。 在一些实施例中，发射相同或不同有色光的两个有源区域被定向成使得通过由底部有源区域发射的大部分光的偏振光通过的偏振器分离，并且反射多数光的偏振光 由顶部活动区域发射。 在一些实施例中，偏振器反射由波长转换层散射的光。
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公开(公告)号：US07642108B2
公开(公告)日：2010-01-05
申请号：US11868854
申请日：2007-10-08
IPC分类号： H01L21/00
CPC分类号： H01L33/20 , H01L33/08 , H01L2224/48091 , H01L2933/0083 , Y10S438/943 , H01L2924/00014
摘要： A photonic crystal light emitting diode (“PXLED”) is provided. The PXLED includes a periodic structure, such as a lattice of holes, formed in the semiconductor layers of an LED. The parameters of the periodic structure are such that the energy of the photons, emitted by the PXLED, lies close to a band edge of the band structure of the periodic structure. Metal electrode layers have a strong influence on the efficiency of the PXLEDs. Also, PXLEDs formed from GaN have a low surface recombination velocity and hence a high efficiency. The PXLEDs are formed with novel fabrication techniques, such as the epitaxial lateral overgrowth technique over a patterned masking layer, yielding semiconductor layers with low defect density. Inverting the PXLED to expose the pattern of the masking layer or using the Talbot effect to create an aligned second patterned masking layer allows the formation of PXLEDs with low defect density.
摘要翻译： 提供了一种光子晶体发光二极管（“PXLED”）。 PXLED包括在LED的半导体层中形成的诸如孔格的周期性结构。 周期性结构的参数使得由PXLED发射的光子的能量靠近周期性结构的带结构的带边。 金属电极层对PXLED的效率有很大的影响。 此外，由GaN形成的PXLED具有低表面复合速度，因此具有高效率。 PXLED由新颖的制造技术形成，例如在图案化掩模层上的外延横向过度生长技术，产生具有低缺陷密度的半导体层。 将PXLED反转以露出掩模层的图案或使用Talbot效应创建对准的第二图案化掩模层允许形成具有低缺陷密度的PXLED。
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公开(公告)号：US07514721B2
公开(公告)日：2009-04-07
申请号：US11290299
申请日：2005-11-29
IPC分类号： H01L33/00
CPC分类号： C09K11/7774 , C04B35/44 , C04B35/597 , C04B35/63416 , C04B35/645 , C04B2235/3208 , C04B2235/3224 , C04B2235/3225 , C04B2235/3229 , C04B2235/5445 , C04B2235/6025 , C04B2235/6581 , C04B2235/662 , C09K11/0883 , C09K11/7721 , C09K11/7731 , C09K11/7734 , C09K11/7792 , H01L33/007 , H01L33/0079 , H01L33/32 , H01L33/502 , H01L33/505 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor structure including a light emitting layer disposed between an n-type region and a p-type region is attached to a compound substrate including a host which provides mechanical support to the device and a ceramic layer including a luminescent material. In some embodiments the compound substrate includes a crystalline seed layer on which the semiconductor structure is grown. The ceramic layer is disposed between the seed layer and the host. In some embodiments, the compound substrate is attached to the semiconductor structure compound substrate is spaced apart from the semiconductor structure and does not provide mechanical support to the structure. In some embodiments, the ceramic layer has a thickness less than 500 μm.
摘要翻译： 包括设置在n型区域和p型区域之间的发光层的半导体结构附着到包括向器件提供机械支撑的主体的复合衬底和包括发光材料的陶瓷层。 在一些实施方案中，化合物基底包括其上生长半导体结构的结晶晶种层。 陶瓷层设置在种子层和主体之间。 在一些实施例中，复合衬底附接到半导体结构复合衬底与半导体结构间隔开，并且不提供对结构的机械支撑。 在一些实施例中，陶瓷层的厚度小于500μm。
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