摘要:
A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.
摘要:
Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.
摘要:
The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.
摘要:
The compounds represented by the formula (I), and pharmacologically acceptable salts and solvates thereof are disclosed. The compound is hydrolyzed in organisms into a compound represented by the formula in which W represents a hydrogen atom, and D represents the group —V—(CH2)p—COOR, wherein R represents a hydrogen atom. The compound inhibits the aggregation of platelets via the inhibition of the linkage of the platelet membrane protein GPIIb/IIIa to fibrinogen. wherein A represents CH2 or CO, B represents the group —(CH2)k— or —(CH2)m—CO—, X and Y are different from each other and represent N or CH, W represents an ester moiety which can be removed under the physiological condition, and Z represents the groups (II) or (III): wherein D represents the group —V—(CH2)p—COOR.
摘要:
A heat dissipator includes a heat-conductive substrate, a lid and a heat-conductive cover layer, and a coolant groove for passing a coolant therethrough is formed on a major surface of the substrate. The lid is positioned on the coolant groove to seal the same, and the cover layer covers the major surface of substrate and the lid. The lid may be received in a lid groove to be flush with the major surface of the substrate. The substrate, lid and cover layer are all made of diamond, and are joined together with substantially no other material therebetween. Thus, a high heat conductivity is achieved. The heat dissipator can be a heat dissipating substrate for an electronic component, or an optical transmission window.
摘要:
A single crystal quartz thin film having a thickness of 5 nm to 50 .mu.m can be prepared by forming the thin film on a single crystal substrate by a sol-gel process and peeling the thin film from the substrate. The present invention can provide the single crystal quartz thin film at a low price without a large and complex apparatus.
摘要:
In a method of synthesizing diamond on a substrate from plasma containing a carbon component, filaments containing tungsten as a thermoelectron-emitting material are arranged above a substrate in a chamber. An electrode is provided at a position separated from and particularly above the filaments. The filaments are at least temporarily energized with a potential relatively higher than that of the substrate, while the electrode is at least temporarily supplied with a potential relatively higher than that of the filaments. Thus, plasma is generated between the filaments and the substrate, while electrons are moved from the filaments to the electrode for also generating plasma between the filaments and the electrode, thereby forming nuclei of diamond on the substrate. Thereafter, the respective potentials of the electron emitting filaments and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.
摘要:
A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are combined with the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such heat sink is produced by a simple process including arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper ends of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.
摘要:
An improved adhesion or bonding between diamond fibers and a matrix of at least one organic polymer such as a resin is achieved in a composite material reinforced with vapor-deposited diamond. To improve bonding to the matrix, hydrogen is removed from the surface of vapor-deposited diamond fiber. This can be achieved by heating the diamond under an oxidative atmosphere at a temperature of about 150.degree. C. to about 800.degree. C., or under a non-oxidative atmosphere at a temperature of about 800.degree. C. to about 1500.degree. C. The surface of the vapor-deposited diamond, which contains not more than about 1.times.10.sup.15 /cm.sup.2 of hydrogen atoms, is bonded to the matrix of resin for example with sufficient strength. To further improve bonding, diamond doped with B or N is employed as the reinforcing material or at least a surface layer thereof.
摘要翻译:金刚石纤维与至少一种有机聚合物如树脂的基质之间的改进的粘附或粘合是在用气相沉积金刚石增强的复合材料中实现的。 为了改善与基质的结合,从气相沉积金刚石纤维的表面除去氢。 这可以通过在氧化气氛下在约150℃至约800℃的温度下或在非氧化性气氛下在约800℃至约1500℃的温度下加热金刚石来实现。 含有不大于约1×10 15 / cm 2氢原子的气相沉积金刚石的表面例如以足够的强度结合到树脂基质上。 为了进一步改善结合,使用掺有B或N的金刚石作为增强材料或至少其表面层。
摘要:
A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are embedded in the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such a heat sink can be produced by a simple process of arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper end of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.