Diamond single crystal composite substrate and method for manufacturing the same
    31.
    发明申请
    Diamond single crystal composite substrate and method for manufacturing the same 有权
    金刚石单晶复合基板及其制造方法

    公开(公告)号:US20050139150A1

    公开(公告)日:2005-06-30

    申请号:US10980152

    申请日:2004-11-04

    CPC分类号: C30B29/04 C30B25/20

    摘要: A diamond single crystal composite substrate which are constructed from a plurality of diamond single crystal substrates with uniform plane orientations disposed side by side and integrated overall by growing diamond single crystals thereon by vapor phase synthesis, in which the deviation of the plane orientation of the main plane of each of said plurality of diamond single crystal substrates, excluding one diamond single crystal substrate, from the {100} plane is less than 1 degree, the deviation of the plane orientation of the main plane of the excluded one substrate from the {100} plane is 1 to 8 degrees, said one diamond single crystal substrate is disposed in the outermost circumferential part when the diamond single crystal substrates are disposed side by side, and is disposed so that the direction in the main plane of said one substrate faces in the outer circumferential direction of the disposed substrates, and diamond single crystals are then grown by vapor phase synthesis so that the diamond single crystal grown from said one diamond single substrate is caused to cover the diamond single crystals grown on the other substrates, to achieve an overall integration.

    摘要翻译: 一种金刚石单晶复合基板,其由具有均匀平面取向的多个金刚石单晶基板构成,并且通过气相合成在其上生长金刚石单晶整体并入,其中主体的平面取向偏离 从{100}平面除去一个金刚石单晶衬底的所述多个金刚石单晶衬底中的每一个的平面的面积小于1度,排除的一个衬底的主平面的平面取向与{100 }平面为1〜8度,当金刚石单晶基板并排配置时,所述一个金刚石单晶基板配置在最外周部,并且配置成使得在所述一个的主平面中的<100>方向 衬底在所设置的衬底的外周方向上面对,然后通过气相合成生长金刚石单晶 使得从所述一个金刚石单个衬底生长的金刚石单晶被覆盖在其它衬底上生长的金刚石单晶,以实现整体的整合。

    Surface acoustic wave device and substrate thereof
    32.
    发明授权
    Surface acoustic wave device and substrate thereof 有权
    声表面波器件及其衬底

    公开(公告)号:US06710513B2

    公开(公告)日:2004-03-23

    申请号:US10203423

    申请日:2002-08-08

    IPC分类号: H03H925

    CPC分类号: H03H9/02582 H03H9/02574

    摘要: Provided are a substrate for a surface-acoustic-wave device and a surface-acoustic-wave device, in which an intermediate layer for controlling crystal characteristics of a piezoelectric layer does not easily separate from a diamond layer. A surface-acoustic-wave device substrate 20 and a surface-acoustic-wave device 10, according to the present invention, comprises a diamond layer 22, an intermediate layer 24 disposed on the diamond layer 22, and a piezoelectric layer 26 disposed on the intermediate layer 24, the piezoelectric layer 26 being made of LiNbO3 or LiTaO3, the intermediate layer 24 being made of AlN.

    摘要翻译: 提供一种用于控制压电层的晶体特性的中间层不容易与金刚石层分离的表面声波器件和表面声波器件的基板。表面声波器件 根据本发明的衬底20和表面声波器件10包括金刚石层22,设置在金刚石层22上的中间层24和设置在中间层24上的压电层26,压电层 26由LiNbO 3或LiTaO 3制成,中间层24由AlN制成。

    Method of making diamond product and diamond product
    33.
    发明授权
    Method of making diamond product and diamond product 失效
    制造钻石产品和钻石产品的方法

    公开(公告)号:US06709730B2

    公开(公告)日:2004-03-23

    申请号:US09995854

    申请日:2001-11-29

    IPC分类号: B32B900

    摘要: The method of making a diamond product in accordance with the present invention comprises the steps of forming a diamond substrate (50) with a mask layer (52), and etching the diamond substrate (50) formed with the mask layer (52) with a plasma of a mixed gas composed of a gas containing an oxygen atom and a gas containing a fluorine atom, whereas the fluorine atom concentration is within the range of 0.04% to 6% with respect to the total number of atoms in the mixed gas.

    摘要翻译: 制造根据本发明的金刚石产品的方法包括以下步骤:用掩模层(52)形成金刚石基底(50),并用形成有掩模层(52)的金刚石基底(50)蚀刻 由含有氧原子的气体和含有氟原子的气体组成的混合气体的等离子体,而氟原子浓度相对于混合气体中的原子总数为0.04〜6%的范围。

    Nitrogen-containing heterocyclic compounds having antiplatelet aggregation effect and medicinal use thereof
    34.
    发明授权
    Nitrogen-containing heterocyclic compounds having antiplatelet aggregation effect and medicinal use thereof 失效
    含有抗血小板聚集作用的含氮杂环化合物及其医药用途

    公开(公告)号:US06472397B1

    公开(公告)日:2002-10-29

    申请号:US09647849

    申请日:2000-11-03

    IPC分类号: A61K3144

    CPC分类号: C07D401/04 C07D405/14

    摘要: The compounds represented by the formula (I), and pharmacologically acceptable salts and solvates thereof are disclosed. The compound is hydrolyzed in organisms into a compound represented by the formula in which W represents a hydrogen atom, and D represents the group —V—(CH2)p—COOR, wherein R represents a hydrogen atom. The compound inhibits the aggregation of platelets via the inhibition of the linkage of the platelet membrane protein GPIIb/IIIa to fibrinogen. wherein A represents CH2 or CO, B represents the group —(CH2)k— or —(CH2)m—CO—, X and Y are different from each other and represent N or CH, W represents an ester moiety which can be removed under the physiological condition, and Z represents the groups (II) or (III): wherein D represents the group —V—(CH2)p—COOR.

    摘要翻译: 公开了式(I)表示的化合物及其药理学上可接受的盐和溶剂合物。 该化合物在生物体中水解成由下式表示的化合物,其中W表示氢原子,D表示-V-(CH 2)p -COOR基团,其中R表示氢原子。 该化合物通过抑制血小板膜蛋白GPIIb / IIIa与纤维蛋白原的连接来抑制血小板聚集。其中A代表CH 2或CO,B代表基团 - (CH 2)k - 或 - (CH 2)m -CO- X和Y彼此不同,表示N或CH,W表示可在生理条件下除去的酯部分,Z表示基团(II)或(III):其中D表示基团-V- (CH 2)p -COOR。

    Heat dissipator including coolant passage and method of fabricating the
same
    35.
    发明授权
    Heat dissipator including coolant passage and method of fabricating the same 失效
    包括冷却剂通道的散热器及其制造方法

    公开(公告)号:US6129145A

    公开(公告)日:2000-10-10

    申请号:US100603

    申请日:1998-06-19

    摘要: A heat dissipator includes a heat-conductive substrate, a lid and a heat-conductive cover layer, and a coolant groove for passing a coolant therethrough is formed on a major surface of the substrate. The lid is positioned on the coolant groove to seal the same, and the cover layer covers the major surface of substrate and the lid. The lid may be received in a lid groove to be flush with the major surface of the substrate. The substrate, lid and cover layer are all made of diamond, and are joined together with substantially no other material therebetween. Thus, a high heat conductivity is achieved. The heat dissipator can be a heat dissipating substrate for an electronic component, or an optical transmission window.

    摘要翻译: 散热器包括导热基板,盖和导热盖层,以及用于使冷却剂通过的冷却剂槽形成在基板的主表面上。 盖子定位在冷却剂槽上以密封它,并且覆盖层覆盖基板和盖的主表面。 盖可以容纳在盖槽中以与基底的主表面齐平。 衬底,盖子和覆盖层都由金刚石制成,并且基本上没有其他材料连接在一起。 因此,实现了高导热性。 散热器可以是用于电子部件或光传输窗的散热基板。

    Method of synthesizing diamond
    37.
    发明授权
    Method of synthesizing diamond 失效
    金刚石合成方法

    公开(公告)号:US5993919A

    公开(公告)日:1999-11-30

    申请号:US984609

    申请日:1997-12-03

    摘要: In a method of synthesizing diamond on a substrate from plasma containing a carbon component, filaments containing tungsten as a thermoelectron-emitting material are arranged above a substrate in a chamber. An electrode is provided at a position separated from and particularly above the filaments. The filaments are at least temporarily energized with a potential relatively higher than that of the substrate, while the electrode is at least temporarily supplied with a potential relatively higher than that of the filaments. Thus, plasma is generated between the filaments and the substrate, while electrons are moved from the filaments to the electrode for also generating plasma between the filaments and the electrode, thereby forming nuclei of diamond on the substrate. Thereafter, the respective potentials of the electron emitting filaments and the electrode are equalized with each other, for growing a film of diamond from the nuclei of diamond.

    摘要翻译: 在含有碳成分的等离子体在基板上合成金刚石的方法中,将包含钨作为热电子发射材料的长丝布置在室中的基板的上方。 电极设置在与灯丝分离并特别在灯丝上方的位置。 长丝至少暂时通电,其电位相对高于衬底的电位,同时电极至少暂时提供比丝的电位更高的电位。 因此,在细丝和衬底之间产生等离子体,同时电子从细丝移动到电极,用于在细丝和电极之间产生等离子体,从而在衬底上形成金刚石核。 此后,电子发射丝和电极的各自的电位彼此相等,用于从金刚石的核生长金刚石膜。

    Process for the production of a diamond heat sink
    38.
    发明授权
    Process for the production of a diamond heat sink 失效
    生产金刚石散热器的工艺

    公开(公告)号:US5791045A

    公开(公告)日:1998-08-11

    申请号:US819440

    申请日:1997-03-17

    摘要: A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are combined with the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such heat sink is produced by a simple process including arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper ends of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.

    摘要翻译: 具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。 翅片与基底组合,并且是具有至少1(W / cm×K)的热导率的材料,例如金刚石。 这种散热器是通过简单的工艺生产的,其包括设置用于生长金刚石的基底材料和翅片,使得基底材料的表面和翅片的上端通过使用适当的支撑构件 或者通过使基材自身工作并通过气相合成方法在其上生长金刚石。

    Diamond reinforced composite material
    39.
    发明授权
    Diamond reinforced composite material 失效
    金刚石增强复合材料

    公开(公告)号:US5677372A

    公开(公告)日:1997-10-14

    申请号:US569591

    申请日:1995-12-08

    摘要: An improved adhesion or bonding between diamond fibers and a matrix of at least one organic polymer such as a resin is achieved in a composite material reinforced with vapor-deposited diamond. To improve bonding to the matrix, hydrogen is removed from the surface of vapor-deposited diamond fiber. This can be achieved by heating the diamond under an oxidative atmosphere at a temperature of about 150.degree. C. to about 800.degree. C., or under a non-oxidative atmosphere at a temperature of about 800.degree. C. to about 1500.degree. C. The surface of the vapor-deposited diamond, which contains not more than about 1.times.10.sup.15 /cm.sup.2 of hydrogen atoms, is bonded to the matrix of resin for example with sufficient strength. To further improve bonding, diamond doped with B or N is employed as the reinforcing material or at least a surface layer thereof.

    摘要翻译: 金刚石纤维与至少一种有机聚合物如树脂的基质之间的改进的粘附或粘合是在用气相沉积金刚石增强的复合材料中实现的。 为了改善与基质的结合,从气相沉积金刚石纤维的表面除去氢。 这可以通过在氧化气氛下在约150℃至约800℃的温度下或在非氧化性气氛下在约800℃至约1500℃的温度下加热金刚石来实现。 含有不大于约1×10 15 / cm 2氢原子的气相沉积金刚石的表面例如以足够的强度结合到树脂基质上。 为了进一步改善结合,使用掺有B或N的金刚石作为增强材料或至少其表面层。

    Heat sink and a process for the production of the same
    40.
    发明授权
    Heat sink and a process for the production of the same 失效
    散热片和生产过程相同

    公开(公告)号:US5642779A

    公开(公告)日:1997-07-01

    申请号:US257288

    申请日:1994-06-09

    摘要: A diamond heat sink having a very high thermal property, to be used for radiation of semiconductor devices or compressors, includes a plate-shaped diamond substrate and fins for increasing the thermal property. The fins are embedded in the substrate and are of a material having a heat conductivity of at least 1 (W/cm.multidot.K), for example, diamond. Such a heat sink can be produced by a simple process of arranging a base material and fins for growing diamond in such a manner that the surface of the base material and the upper end of the fins are substantially the same height by the use of a suitable supporting member or by working the base material itself and growing diamond thereon by a gaseous phase synthesis method.

    摘要翻译: 具有非常高的热性能的用于半导体器件或压缩机的辐射的金刚石散热器包括板状金刚石基底和用于增加热性能的翅片。 翅片嵌入基板中,并且是具有至少1(W / cm×K)的导热率的材料,例如金刚石。 这样的散热器可以通过简单的方法来制造,该方法是将基底材料和用于生长金刚石的翅片以这样一种方式制成,使得基底材料的表面和翅片的上端通过使用合适的 或通过使基材本身加工并通过气相合成方法在其上生长金刚石。