Wafer transfer apparatus
    33.
    发明申请
    Wafer transfer apparatus 审中-公开
    晶圆传送装置

    公开(公告)号:US20050095111A1

    公开(公告)日:2005-05-05

    申请号:US10936478

    申请日:2004-09-09

    摘要: A wafer transfer apparatus can transfer wafers to and from at least one process chamber quickly and in a small amount of space. The wafer transfer includes an arm unit, and a multi-blade connected to said arm unit so as to be rotatable relative to the arm unit. The multi-blade has at least two wafer supports configured to respectively support wafers as all lying in a horizontal plane. The arm unit includes a first arm mounted for rotation in a horizontal plane, and a second arm carried by the first arm and rotatable relative to the first arm in a horizontal plane. The multi-blade is carried by the second arm.

    摘要翻译: 晶片传送装置可以快速和少量的空间将晶片传送到至少一个处理室和从至少一个处理室传送晶片。 晶片传送包括臂单元和连接到所述臂单元以相对于臂单元可旋转的多叶片。 多刀片具有至少两个晶片支撑件,其构造成分别支撑晶片,全部位于水平面。 臂单元包括安装成用于在水平面中旋转的第一臂和由第一臂承载并且能够相对于第一臂在水平面中旋转的第二臂。 多叶片由第二臂承载。

    METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING COMPOSITIONS FOR ETCHING COPPER
    37.
    发明申请
    METHODS OF MANUFACTURING A SEMICONDUCTOR DEVICE USING COMPOSITIONS FOR ETCHING COPPER 有权
    使用组合物制造半导体器件以蚀刻铜的方法

    公开(公告)号:US20110130000A1

    公开(公告)日:2011-06-02

    申请号:US12948331

    申请日:2010-11-17

    IPC分类号: H01L21/60

    摘要: A method of manufacturing a semiconductor device includes preparing a substrate on which a fuze line containing copper is formed. The method further includes cutting the fuze line by emitting a laser beam, and applying a composition for etching copper to the substrate to finely etch a cutting area of the fuze line and to substantially remove at least one of a copper residue and a copper oxide residue remaining near the cutting area. The composition for etching copper includes about 0.01 to about 10 percent by weight of an organic acid, about 0.01 to 1.0 percent by weight of an oxidizing agent, and a protic solvent.

    摘要翻译: 制造半导体器件的方法包括制备其上形成有铜的引线的衬底。 该方法还包括通过发射激光束切割引信线,以及将用于蚀刻铜的组合物施加到基底上,以精细蚀刻引信线的切割区域并基本上除去铜残留物和氧化铜残留物中的至少一种 保留在切割区附近。 用于蚀刻铜的组合物包括约0.01至约10重量%的有机酸,约0.01至1.0重量%的氧化剂和质子溶剂。

    Method and apparatus for exposing semiconductor substrates
    40.
    发明授权
    Method and apparatus for exposing semiconductor substrates 有权
    曝光半导体衬底的方法和装置

    公开(公告)号:US07417709B2

    公开(公告)日:2008-08-26

    申请号:US11168527

    申请日:2005-06-29

    CPC分类号: G03B27/42 G03F7/70275

    摘要: Provided are methods and apparatus for exposing multiple substrates within a single exposing apparatus using only a single light source wherein a first substrate is exposed in a series of steps or shots during which light transmitted along a primary optical path is directed onto a primary surface of the substrate with the substrate being repositioned between sequential shots. A second substrate is exposed during the period of time while the first substrate is being repositioned by altering the optical path to divert the light from the light source into a secondary optical path that will expose a region on the second substrate. When the first substrate has been repositioned, the diversion of the light is terminated so that the light will again be transmitted along the primary optical path in order to expose the next sequential shot on the primary surface of the first substrate.

    摘要翻译: 提供了用于仅使用单个光源在单个曝光设备中曝光多个基板的方法和设备,其中第一基板以一系列步骤或照射曝光,在此期间沿主要光学路径传输的光被引导到 衬底,其中衬底在连续镜头之间重新定位。 第二衬底在一段时间期间被曝光,同时通过改变光路来重新定位第一衬底,以将来自光源的光转移到将暴露第二衬底上的区域的次级光路。 当第一衬底被重新定位时,光的转向被终止,使得光将再次沿着主光路传播,以便暴露第一衬底的主表面上的下一个顺序射击。