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    Method and apparatus for exposing semiconductor substrates
    1.
    发明申请
    Method and apparatus for exposing semiconductor substrates 有权
    曝光半导体衬底的方法和装置

    公开(公告)号：US20060001852A1

    公开(公告)日：2006-01-05

    申请号：US11168527

    申请日：2005-06-29

    申请人： Sang-Ho Lee ,  Jin-Phil Choi ,  Dong-Hwa Shin ,  Seung-Ki Chae ,  Byong-Cheol Park

    发明人： Sang-Ho Lee ,  Jin-Phil Choi ,  Dong-Hwa Shin ,  Seung-Ki Chae ,  Byong-Cheol Park

    IPC分类号： G03B27/42

    CPC分类号： G03B27/42 ,  G03F7/70275

    摘要： Provided are methods and apparatus for exposing multiple substrates within a single exposing apparatus using only a single light source wherein a first substrate is exposed in a series of steps or shots during which light transmitted along a primary optical path is directed onto a primary surface of the substrate with the substrate being repositioned between sequential shots. A second substrate is exposed during the period of time while the first substrate is being repositioned by altering the optical path to divert the light from the light source into a secondary optical path that will expose a region on the second substrate. When the first substrate has been repositioned, the diversion of the light is terminated so that the light will again be transmitted along the primary optical path in order to expose the next sequential shot on the primary surface of the first substrate.

    摘要翻译： 提供了用于仅使用单个光源在单个曝光设备中曝光多个基板的方法和设备，其中第一基板以一系列步骤或照射曝光，在此期间沿主要光学路径传输的光被引导到 衬底，其中衬底在连续镜头之间重新定位。 第二衬底在一段时间期间被曝光，同时通过改变光路来重新定位第一衬底，以将来自光源的光转移到将暴露第二衬底上的区域的次级光路。 当第一衬底被重新定位时，光的转向被终止，使得光将再次沿着主光路传播，以便暴露第一衬底的主表面上的下一个顺序射击。

    Method and apparatus for exposing semiconductor substrates
    2.
    发明授权
    Method and apparatus for exposing semiconductor substrates 有权
    曝光半导体衬底的方法和装置

    公开(公告)号：US07417709B2

    公开(公告)日：2008-08-26

    申请号：US11168527

    申请日：2005-06-29

    申请人： Sang-Ho Lee ,  Jin-Phil Choi ,  Dong-Hwa Shin ,  Seung-Ki Chae ,  Byong-Cheol Park

    发明人： Sang-Ho Lee ,  Jin-Phil Choi ,  Dong-Hwa Shin ,  Seung-Ki Chae ,  Byong-Cheol Park

    IPC分类号： G03B27/42 ,  G03B27/70 ,  G03B27/54 ,  G03B27/74 ,  G03B27/32 ,  G03C5/00

    CPC分类号： G03B27/42 ,  G03F7/70275

    摘要： Provided are methods and apparatus for exposing multiple substrates within a single exposing apparatus using only a single light source wherein a first substrate is exposed in a series of steps or shots during which light transmitted along a primary optical path is directed onto a primary surface of the substrate with the substrate being repositioned between sequential shots. A second substrate is exposed during the period of time while the first substrate is being repositioned by altering the optical path to divert the light from the light source into a secondary optical path that will expose a region on the second substrate. When the first substrate has been repositioned, the diversion of the light is terminated so that the light will again be transmitted along the primary optical path in order to expose the next sequential shot on the primary surface of the first substrate.

    摘要翻译： 提供了用于仅使用单个光源在单个曝光设备中曝光多个基板的方法和设备，其中第一基板以一系列步骤或照射曝光，在此期间沿主要光学路径传输的光被引导到 衬底，其中衬底在连续镜头之间重新定位。 第二衬底在一段时间期间被曝光，同时通过改变光路来重新定位第一衬底，以将来自光源的光转移到将暴露第二衬底上的区域的次级光路。 当第一衬底被重新定位时，光的转向被终止，使得光将再次沿着主光路传播，以便暴露第一衬底的主表面上的下一个顺序射击。

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    6.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120196439A1

    公开(公告)日：2012-08-02

    申请号：US13289107

    申请日：2011-11-04

    申请人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

    发明人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

    IPC分类号： H01L21/28

    CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

    摘要翻译： 在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。

    Method for processing a wafer and apparatus for performing the same
    7.
    发明授权
    Method for processing a wafer and apparatus for performing the same 失效
    晶圆加工方法及其制造方法

    公开(公告)号：US06869500B2

    公开(公告)日：2005-03-22

    申请号：US10236939

    申请日：2002-09-09

    申请人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

    发明人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

    IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/311 ,  H05H1/00 ,  C23C16/00

    CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/67109

    摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

    摘要翻译： 公开了一种用于在制造半导体器件中处理晶片的方法和装置，以及用于蚀刻形成在晶片上的材料的方法和设备，其中第一和第二冷却部件将多个晶片附近的环境温度调节到第一温度 ，通过在第一温度下引入反应气体来处理晶片，然后，加热部分将晶片附近的气氛的温度从第一温度快速升高到第二温度，以部分地分离在处理期间产生的副产物， 维持第二温度以将大部分副产物与晶片分离，并且处理步骤在同一空间内原位实施。 因此，可以蚀刻形成在几个晶片上的自然氧化物层，并且可以在相同的室中原位除去反应副产物，从而提高生产率。

    Laser cleaning of backside of wafer for photolithographic processing
    8.
    发明授权
    Laser cleaning of backside of wafer for photolithographic processing 失效
    用于光刻处理的晶片背面的激光清洗

    公开(公告)号：US07556712B2

    公开(公告)日：2009-07-07

    申请号：US11566624

    申请日：2006-12-04

    申请人： Hun-Jung Yi ,  Seung-Ki Chae

    发明人： Hun-Jung Yi ,  Seung-Ki Chae

    IPC分类号： C23F1/00 ,  H01L21/00

    CPC分类号： G03F7/2022 ,  G03F7/70925 ,  H01L21/67028 ,  H01L21/67225

    摘要： A photolithography process may be carried out after cleaning the backside of a wafer by means of an apparatus that includes an illumination module for conducting an optical illumination operation of photolithography to the front side of the wafer, and a cleaning module for conducting a cleaning operation on the wafer backside. Providing the capability of removing particles from the wafer backside and eliminating defocusing effects due to wafer chucking errors, these and other embodiments improve reliability of the photolithography process, as well as productivity and yields for the semiconductor devices.

    摘要翻译： 可以通过包括用于将光刻的光学照明操作进行到晶片前侧进行照明的照明模块的装置清洁晶片的背面之后进行光刻工艺，以及用于进行清洁操作的清洁模块 晶圆背面。 提供从晶片背面去除颗粒的能力并消除由于晶片夹紧误差引起的散焦效应，这些和其它实施例提高了光刻工艺的可靠性，以及半导体器件的生产率和产量。

    Methods and apparatus for forming a titanium nitride layer
    9.
    发明申请
    Methods and apparatus for forming a titanium nitride layer 审中-公开
    用于形成氮化钛层的方法和装置

    公开(公告)号：US20060110533A1

    公开(公告)日：2006-05-25

    申请号：US11281163

    申请日：2005-11-17

    申请人： Wan-Goo Hwang ,  Myeong-Jin Kim ,  Seung-Ki Chae ,  Hyun-Seok Lim ,  Kyoung-Ho Jang

    发明人： Wan-Goo Hwang ,  Myeong-Jin Kim ,  Seung-Ki Chae ,  Hyun-Seok Lim ,  Kyoung-Ho Jang

    IPC分类号： C23C16/00 ,  B05C11/00

    CPC分类号： H01L21/67109 ,  C23C16/34 ,  C23C16/45546 ,  H01L21/28556 ,  H01L21/67757

    摘要： A method of forming a titanium nitride layer by an atomic layer deposition process using a batch-type vertical reaction furnace is described wherein a first source gas including a titanium precursor is provided onto substrates loaded in a process chamber for a first time period; a first purge gas is introduced into the process chamber for a second time period shorter than the first time period; a second source gas including nitrogen is provided onto the substrates for a third time period substantially identical to the first time period; and, a second purge gas is introduced into the process chamber for a fourth time period substantially identical to the second time period. Titanium nitride layers having uniform thickness and good step coverage may thus be formed while realizing a greatly reduced manufacturing time.

    摘要翻译： 描述了通过使用间歇式立式反应炉的原子层沉积工艺形成氮化钛层的方法，其中包括钛前体的第一源气体在第一时间段内被装载到处理室中的基板上; 将第一吹扫气体引入处理室中比第一时间段短的第二时间段; 包括氮的第二源气体在基板上提供与第一时间段基本相同的第三时间段; 并且将第二吹扫气体与第二时间段基本相同的第四时间段引入到处理室中。 因此可以在实现大大缩短的制造时间的同时形成具有均匀厚度和良好阶梯覆盖的氮化钛层。

    Substrate manufacturing apparatus and substrate transfer module used therein
    10.
    发明申请
    Substrate manufacturing apparatus and substrate transfer module used therein 审中-公开
    基板制造装置及其中使用的基板转印模块

    公开(公告)号：US20050220576A1

    公开(公告)日：2005-10-06

    申请号：US10990249

    申请日：2004-11-16

    申请人： Ki-Sang Kim ,  Seung-Ki Chae ,  Yun-Sik Yang ,  Seong-Hun Jeon

    发明人： Ki-Sang Kim ,  Seung-Ki Chae ,  Yun-Sik Yang ,  Seong-Hun Jeon

    IPC分类号： B25J9/06 ,  B65G1/00 ,  B65G49/07 ,  H01L21/677 ,  H01L21/68 ,  H01L21/687

    CPC分类号： H01L21/67748 ,  H01L21/68707

    摘要： A substrate manufacturing apparatus comprises a transfer chamber, at least one process chamber disposed adjacent to a lateral face of the transfer chamber, and a substrate transfer module including at least two transfer robots which transfer a substrate to the process chamber, the substrate transfer module being disposed at the transfer chamber. Each of the at least two transfer robots comprises a blade including at least two supporters for supporting a substrate, an arm part connected to the blade to move the blade, and an arm driving part for driving the blade and the arm part.

    摘要翻译： 基板制造装置包括传送室，与传送室的侧面相邻设置的至少一个处理室，以及包括将基板传送到处理室的至少两个传送机器人的基板传送模块，所述基板传送模块是 设置在传送室。 所述至少两个传送机器人中的每一个包括一个叶片，该叶片包括至少两个用于支撑基板的支撑件，连接到叶片以移动叶片的臂部分和用于驱动叶片和臂部分的臂驱动部分。