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    Method for processing a wafer and apparatus for performing the same
    4.
    发明授权
    Method for processing a wafer and apparatus for performing the same 失效
    晶圆加工方法及其制造方法

    公开(公告)号：US06869500B2

    公开(公告)日：2005-03-22

    申请号：US10236939

    申请日：2002-09-09

    申请人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

    发明人： Kwang-Myung Lee ,  Mikio Takagi ,  Jae-Hyuk An ,  Seung-Ki Chae ,  Jea-Wook Kim

    IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/304 ,  H01L21/306 ,  H01L21/311 ,  H05H1/00 ,  C23C16/00

    CPC分类号： H01L21/02046 ,  H01L21/31116 ,  H01L21/67109

    摘要： Disclosed are a method and an apparatus for processing a wafer in manufacturing a semiconductor device and a method and an apparatus for etching a material formed on the wafer, wherein first and second cooling parts adjust an ambient temperature near a plurality of wafers to a first temperature, the wafers are processed by introducing a reaction gas at the first temperature, then, a heating part rapidly raises the temperature of the atmosphere near the wafers from the first temperature to the second temperature to partially separate by-products produced during the processing, the second temperature is maintained to separate most of the by-products from the wafers, and the processing steps are implemented in-situ within the same space. Accordingly, a native oxide layer formed on several wafers can be etched and the reaction by-products can be removed in-situ in the same chamber so productivity is improved.

    摘要翻译： 公开了一种用于在制造半导体器件中处理晶片的方法和装置，以及用于蚀刻形成在晶片上的材料的方法和设备，其中第一和第二冷却部件将多个晶片附近的环境温度调节到第一温度 ，通过在第一温度下引入反应气体来处理晶片，然后，加热部分将晶片附近的气氛的温度从第一温度快速升高到第二温度，以部分地分离在处理期间产生的副产物， 维持第二温度以将大部分副产物与晶片分离，并且处理步骤在同一空间内原位实施。 因此，可以蚀刻形成在几个晶片上的自然氧化物层，并且可以在相同的室中原位除去反应副产物，从而提高生产率。

    Etching method
    6.
    发明授权
    Etching method 有权
    蚀刻方法

    公开(公告)号：US07497963B2

    公开(公告)日：2009-03-03

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： B44C1/22

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    Etching method
    7.
    发明申请
    Etching method 有权
    蚀刻方法

    公开(公告)号：US20050153553A1

    公开(公告)日：2005-07-14

    申请号：US11032393

    申请日：2005-01-10

    申请人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    发明人： Kwang-Myung Lee ,  Ki-Young Yun ,  Seung-Ki Chae ,  No-Hyun Huh ,  Wan-Goo Hwang ,  Jung-Hyun Hwang ,  Shinji Yanagisawa ,  Kengo Tsutsumi ,  Seiichi Takahashi

    IPC分类号： H01L21/3065 ,  H01L21/00 ,  H01L21/302 ,  H01L21/311 ,  H01L21/461 ,  H01L21/768 ,  H01L23/522

    CPC分类号： H01L21/67063 ,  H01L21/31116

    摘要： In this etching method, since an etching gas is introduced before introduction of free radicals into a processing chamber, the etching gas has been adsorbed on the surface of substrates when the free radicals are introduced. Accordingly, the free radicals react with the etching gas adsorbed on the surface of the substrates, and the reaction proceeds uniformly on the surface of the substrate. As a result, nonuniform etching does not occur on the surface of the substrate. Moreover, since the reaction between the etching gas and the free radicals occurs on the surface of the substrate, an intermediate product produced according to the reaction between the etching gas and the free radicals reacts with an etching object promptly. Therefore, the intermediate product is not exhausted from the processing chamber 12 excessively, and hence the etching efficiency is high. As a result, according to this etching method, not only the in-plane distribution of the etching amount becomes more uniform, but also the etching rate is increased more than in the conventional etching method.

    摘要翻译： 在该蚀刻方法中，由于在将自由基引入处理室之前引入蚀刻气体，当引入自由基时，蚀刻气体已被吸附在基板的表面上。 因此，自由基与吸附在基板表面的蚀刻气体反应，反应在基板表面上均匀地进行。 结果，在基板的表面上不会发生不均匀的蚀刻。 此外，由于蚀刻气体和自由基之间的反应发生在基板的表面上，所以根据蚀刻气体和自由基之间的反应产生的中间产物迅速与蚀刻对象反应。 因此，中间产品没有过度地从处理室12中排出，因此蚀刻效率高。 结果，根据该蚀刻方法，不仅蚀刻量的面内分布变得更均匀，而且比常规蚀刻方法更多地提高蚀刻速率。

    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME
    9.
    发明申请
    SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME 有权
    半导体器件及其制造方法

    公开(公告)号：US20120196439A1

    公开(公告)日：2012-08-02

    申请号：US13289107

    申请日：2011-11-04

    申请人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

    发明人： Kook-Joo KIM ,  Jin-Ho Kim ,  Seung-Ki Chae ,  Pil-Kwon Jun ,  Sun-Hee Park ,  Gyoung-Eun Byun

    IPC分类号： H01L21/28

    CPC分类号： H01L23/522 ,  H01L21/76829 ,  H01L2924/0002 ,  H01L2924/00

    摘要： In a method of forming a conductive pattern structure of a semiconductor device, a first insulating interlayer is formed on a substrate. A first wiring is formed to pass through the first insulating interlayer. An etch stop layer and a second insulating interlayer are sequentially formed on the first insulating interlayer. A second wiring is formed to pass through the second insulating interlayer and the etch stop layer. A dummy pattern is formed to pass through the second insulating layer and the etch stop layer at the same time as forming the second wiring. The second wiring is electrically connected to the first wiring. The dummy pattern is electrically isolated from the second wiring.

    摘要翻译： 在形成半导体器件的导电图案结构的方法中，在基板上形成第一绝缘中间层。 形成第一布线以通过第一绝缘中间层。 在第一绝缘中间层上依次形成蚀刻停止层和第二绝缘中间层。 形成第二布线以通过第二绝缘中间层和蚀刻停止层。 在形成第二布线的同时，形成虚设图形以通过第二绝缘层和蚀刻停止层。 第二布线电连接到第一布线。 虚设图案与第二布线电隔离。