摘要:
An antenna includes branches having substantially identical shapes. The branches are symmetrically disposed about a central point and extend along at least two concentric patterns whose geometric centers coincide with the central point. The branches each include pattern-forming portions that lie entirely within the concentric patterns, and at least one connecting portion extending between and connecting the pattern-forming portions. Input/output terminals for allowing a voltage to be impressed across the branches are provided at ends of each of the branches.
摘要:
A method of doping ions into an object using plasma, including providing a doping gas between a first electrode and a second electrode, where an object is disposed between the first and the second electrodes, applying a first power to the first electrode and grounding the second electrode, exciting the doping gas to a plasma state, directing ions toward the object to be doped, applying a second power to the second electrode and grounding the first electrode, and counting a dose of the ions directed toward the second electrode, and an apparatus for performing the same.
摘要:
In a method of doping ions into an object, such as a substrate, using plasma, a doping gas may be provided between first and second electrodes in a chamber. An electric field may be formed between the first and the second electrodes to excite the doping gas to a plasma state. The electric field may be formed by applying a first power having a first positive electric potential and a second power having a second positive electric potential, the second positive electric potential being higher than the first positive electric potential. The electric field may be reversed in direction by blocking the second power from being applied to the second electrode. Accumulated ions on the substrate may be effectively neutralized by introducing electrons toward the substrate so that arcing generation may be prevented.
摘要:
An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.
摘要:
An elementary plasma source for generating plasma is provided. In the elementary plasma source, first and second magnets are shaped like a hollow cylinder, and the second magnet surrounds the first magnet, for forming a magnetic trap between the first and second magnets. A guide provides microwaves to a space between the first and second magnets.
摘要:
High electron mobility transistors (HEMT) exhibiting dual depletion and methods of manufacturing the same. The HEMT includes a source electrode, a gate electrode and a drain electrode disposed on a plurality of semiconductor layers having different polarities. A dual depletion region exists between the source electrode and the drain electrode. The plurality of semiconductor layers includes an upper material layer, an intermediate material layer and a lower material layer, and a polarity of the intermediate material layer is different from polarities of the upper material layer and the lower material layer.
摘要:
An electron cyclotron resonance equipment generates plasma by application of a processing gas and microwave energy into a vacuum chamber having a wafer therein in an environment of reduced pressure. The equipment includes a horn antenna assembly mounted onto an uppermost end of the vacuum chamber for radiating the microwave energy supplied from a high-frequency generator into the vacuum chamber. The horn antenna enables extension and retraction in a lengthwise direction to change a flare angle of the horn antenna. The equipment is provided with a fixed antenna and a plurality of mobile antennas to configure a horn antenna assembly, thereby enabling control of the flare angle in the horn antenna as a result of displacement of the mobile antennas. Thus, the uniformity in radiation of the microwave energy within plasma chamber can be controlled with efficiency.
摘要:
An electron cyclotron resonance equipment generates plasma by application of a processing gas and microwave energy into a vacuum chamber having a wafer therein in an environment of reduced pressure. The equipment includes a horn antenna assembly mounted onto an uppermost end of the vacuum chamber for radiating the microwave energy supplied from a high-frequency generator into the vacuum chamber. The horn antenna enables extension and retraction in a lengthwise direction to change a flare angle of the horn antenna. The equipment is provided with a fixed antenna and a plurality of mobile antennas to configure a horn antenna assembly, thereby enabling control of the flare angle in the horn antenna as a result of displacement of the mobile antennas. Thus, the uniformity in radiation of the microwave energy within plasma chamber can be controlled with efficiency.
摘要:
Disclosed is an apparatus for generating inductively-coupled plasma (ICP). The ICP generation apparatus includes a source region where an ICP antenna coil is mounted, the ICP antenna coil generating inductive electric fields for generating plasma and having a serially-connected concentric circle-type structure, the total number of windings of the ICP antenna coil being greater than 2, the ICP antenna coil having a structure in which at least one circular winging closest to the center of the concentric circle is wound in a direction opposite to that of the other windings; a sealed chamber in which a predetermined process is performed on a sample placed on a chuck therein through a reaction between plasma ions and reactive radicals; and a radio frequency (RF) power supply for providing RF electric power of a predetermined frequency to the ICP antenna coil in the source region.
摘要:
A method for forming a selective ohmic contact for a Group III-nitride heterojunction structured device may include forming a conductive layer and a capping layer on an epitaxial substrate including at least one Group III-nitride heterojunction layer and having a defined ohmic contact region, the capping layer being formed on the conductive layer or between the conductive layer and the Group III-nitride heterojunction layer in one of the ohmic contact region and non-ohmic contact region, and applying at least one of a laser annealing process and an induction annealing process on the substrate at a temperature of less than or equal to about 750° C. to complete the selective ohmic contact in the ohmic contact region.