公开(公告)号：US4061468A

公开(公告)日：1977-12-06

申请号：US592295

申请日：1975-07-01

申请人： Hans Lange ,  Walter Rittersdorf ,  Hans-Georg Rey ,  Wolfgang Werner ,  Peter Rieckmann

发明人： Hans Lange ,  Walter Rittersdorf ,  Hans-Georg Rey ,  Wolfgang Werner ,  Peter Rieckmann

IPC分类号： G01N33/50 ,  G01N31/22 ,  G01N33/52 ,  G01N33/64 ,  G01N33/16

CPC分类号： G01N33/521 ,  Y10T428/31982 ,  Y10T436/173076 ,  Y10T436/200833

摘要： Stable test strips for the detection of components in liquids, for example blood, ketone bodies and nitrates in urine, includes two indicator layers one of which is a water-soluble paper.

摘要翻译： 用于检测液体中组分的稳定试纸，例如尿液中的血液，酮体和硝酸盐，包括两个指示剂层，其中一个是水溶性纸。

公开(公告)号：US3988208A

公开(公告)日：1976-10-26

申请号：US559273

申请日：1975-03-17

申请人： Wolfgang Werner ,  Peter Vogel ,  Hugo Tiedemann ,  Werner Guthlein

发明人： Wolfgang Werner ,  Peter Vogel ,  Hugo Tiedemann ,  Werner Guthlein

IPC分类号： C07D209/88 ,  C12Q1/28 ,  C12Q1/54 ,  C12K1/04

CPC分类号： C12Q1/54 ,  C07D209/88 ,  C12Q1/28 ,  C12Q2326/00 ,  C12Q2326/14

摘要： Novel 3-aminocarbazole compounds of the formula: ##SPC1##WhereinX is hydrogen or halogen,Y is oxygen or represents two hydrogen atoms; andR.sub.1 and R.sub.2, which can be the same or different, are hydrogen, lower alkyl or hydroxyalkyl or amino; andN is 1 or 2, with the proviso that when n is2, X, Y, R.sub.1 and R.sub.2 cannot all be hydrogen atoms, as well as the salts thereof with inorganic and organic acids; are outstandingly effective indicators for the determination of glucose and provide stable compositions for such glucose determination.

摘要翻译： 新型3-氨基咔唑化合物，具有下式：

公开(公告)号：US08637954B2

公开(公告)日：2014-01-28

申请号：US12911009

申请日：2010-10-25

申请人： Thorsten Meyer ,  Wolfgang Werner ,  Christoph Kadow

发明人： Thorsten Meyer ,  Wolfgang Werner ,  Christoph Kadow

IPC分类号： H01L21/70 ,  H01L21/332

CPC分类号： H01L27/0688 ,  H01L21/26586 ,  H01L21/76224 ,  H01L21/823878 ,  H01L27/0623 ,  H01L27/0629 ,  H01L27/092 ,  H01L29/0657 ,  H01L29/0878 ,  H01L29/407 ,  H01L29/41766 ,  H01L29/41775 ,  H01L29/42368 ,  H01L29/66734 ,  H01L29/78 ,  H01L29/7811 ,  H01L29/7813

摘要： A semiconductor die includes a substrate, a first device region and a second device region. The first device region includes an epitaxial layer on the substrate and one or more semiconductor devices of a first type formed in the epitaxial layer of the first device region. The second device region is spaced apart from the first device region and includes an epitaxial layer on the substrate and one or more semiconductor devices of a second type formed in the epitaxial layer of the second device region. The epitaxial layer of the first device region is different than the epitaxial layer of the second device region so that the one or more semiconductor devices of the first type are formed in a different epitaxial layer than the one or more semiconductor devices of the second type.

摘要翻译： 半导体管芯包括衬底，第一器件区域和第二器件区域。 第一器件区域包括衬底上的外延层和形成在第一器件区域的外延层中的第一类型的一个或多个半导体器件。 第二器件区域与第一器件区域间隔开，并且在衬底上包括外延层，以及形成在第二器件区域的外延层中的第二类型的一个或多个半导体器件。 第一器件区域的外延层与第二器件区域的外延层不同，使得第一类型的一个或多个半导体器件形成在与第二类型的一个或多个半导体器件不同的外延层中。

公开(公告)号：US08587055B2

公开(公告)日：2013-11-19

申请号：US11678455

申请日：2007-02-23

申请人： Martin Stiftinger ,  Snezana Jenei ,  Wolfgang Werner ,  Uwe Hodel

发明人： Martin Stiftinger ,  Snezana Jenei ,  Wolfgang Werner ,  Uwe Hodel

IPC分类号： H01L29/66

CPC分类号： H01L29/0634 ,  H01L29/0847 ,  H01L29/66659 ,  H01L29/7835

摘要： In an embodiment, an apparatus includes a source region, a gate region and a drain region supported by a substrate, and a drift region including a plurality of vertically extending n-wells and p-wells to couple the gate region and the drain region of a transistor, wherein the plurality of n-wells and p-wells are formed in alternating longitudinal rows to form a superjunction drift region longitudinally extending between the gate region and the drain region of the transistor.

摘要翻译： 在一个实施例中，一种装置包括源极区域，栅极区域和由衬底支撑的漏极区域，以及漂移区域，包括多个垂直延伸的n阱阱和p阱以将栅极区域和漏极区域耦合 晶体管，其中所述多个n阱和p阱以交替的纵向行形成，以形成在晶体管的栅极区域和漏极区域之间纵向延伸的超结漂移区域。

公开(公告)号：US08220988B2

公开(公告)日：2012-07-17

申请号：US12514555

申请日：2007-11-02

申请人： Wolfgang Werner ,  Joachim Aurich ,  Sascha Werth

发明人： Wolfgang Werner ,  Joachim Aurich ,  Sascha Werth

IPC分类号： G01N25/68 ,  G01N27/12 ,  G01N27/22

CPC分类号： G01N27/121 ,  Y10T29/49124 ,  Y10T29/49155

摘要： A sensor device is provided for detecting thawing on surfaces with interdigital electrodes formed in a resistance layer which is formed on a substrate. In order to develop the sensor device further so that the measuring speed of the sensor device is further increased, the disclosure proposes that the interdigital electrodes and recesses between the interdigital electrodes have a moisture-sensitive hydrophilic surface through condensation cores applied to it.

摘要翻译： 提供一种传感器装置，用于检测在形成于基板上的电阻层中形成的叉指电极的表面上的解冻。 为了进一步开发传感器装置，传感器装置的测量速度进一步提高，本公开提出，叉指间电极之间的叉指电极和凹槽通过施加到其上的冷凝芯具有湿敏亲水表面。

公开(公告)号：US07999311B2

公开(公告)日：2011-08-16

申请号：US12476077

申请日：2009-06-01

申请人： Wolfgang Werner

发明人： Wolfgang Werner

IPC分类号： H01L29/66 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0649 ,  H01L29/0878 ,  H01L29/401 ,  H01L29/407 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor device is disclosed. One embodiment includes a trench within a semiconductor body and a gate insulating structure at opposing sidewalls within the trench. A gate electrode structure adjoins the gate insulating structure within the trench and a dielectric structure adjoins the gate electrode structure within the trench. The gate electrode structure is in contact with the semiconductor body at a bottom side of the trench and is electrically coupled to a drain zone over an element having a voltage blocking capability.

摘要翻译： 公开了一种半导体器件。 一个实施例包括在半导体主体内的沟槽和沟槽内相对的侧壁处的栅极绝缘结构。 栅极电极结构邻接沟槽内的栅极绝缘结构，并且电介质结构邻接沟槽内的栅电极结构。 栅电极结构在沟槽的底侧与半导体本体接触，并且在具有电压阻挡能力的元件上电耦合到漏极区。

公开(公告)号：US07880224B2

公开(公告)日：2011-02-01

申请号：US12019750

申请日：2008-01-25

申请人： Wolfgang Werner ,  Franz Hirler

发明人： Wolfgang Werner ,  Franz Hirler

IPC分类号： H01L29/76 ,  H01L21/336

CPC分类号： H01L29/7802 ,  H01L29/0634 ,  H01L29/0653 ,  H01L29/0878 ,  H01L29/405 ,  H01L29/407 ,  H01L29/42356 ,  H01L29/4236 ,  H01L29/4916 ,  H01L29/7813

摘要： Semiconductor component including a drift region and a drift control region. One embodiment provides a drift zone and a drift control zone. A drift control zone dielectric is arranged between the first drift zone and the drift control zone and has at least two sections arranged at a distance from one another in a current flow direction of the component. At least one separating structure is arranged between the drift zone and the drift control zone in the region of an interruption, defined by the at least two sections, of the drift control zone dielectric and has at least one PN junction.

摘要翻译： 半导体元件包括漂移区和漂移控制区。 一个实施例提供漂移区和漂移控制区。 漂移控制区电介质布置在第一漂移区和漂移控制区之间，并且具有至少两个部分，其在组件的当前流动方向上彼此间隔一定距离。 在由漂移控制区介质的至少两个部分限定的中断区域中，在漂移区和漂移控制区之间布置至少一个分离结构，并具有至少一个PN结。

公开(公告)号：US20100301408A1

公开(公告)日：2010-12-02

申请号：US12476077

申请日：2009-06-01

申请人： Wolfgang Werner

发明人： Wolfgang Werner

IPC分类号： H01L29/78 ,  H01L21/336

CPC分类号： H01L29/7813 ,  H01L29/0649 ,  H01L29/0878 ,  H01L29/401 ,  H01L29/407 ,  H01L29/4925 ,  H01L29/4983 ,  H01L29/66734 ,  H01L29/7804

摘要： A semiconductor device is disclosed. One embodiment includes a trench within a semiconductor body and a gate insulating structure at opposing sidewalls within the trench. A gate electrode structure adjoins the gate insulating structure within the trench and a dielectric structure adjoins the gate electrode structure within the trench. The gate electrode structure is in contact with the semiconductor body at a bottom side of the trench and is electrically coupled to a drain zone over an element having a voltage blocking capability.

摘要翻译： 公开了一种半导体器件。 一个实施例包括在半导体主体内的沟槽和沟槽内相对的侧壁处的栅极绝缘结构。 栅极电极结构邻接沟槽内的栅极绝缘结构，并且电介质结构邻接沟槽内的栅电极结构。 栅电极结构在沟槽的底侧与半导体本体接触，并且在具有电压阻挡能力的元件上电耦合到漏极区。

公开(公告)号：US07839877B2

公开(公告)日：2010-11-23

申请号：US11811943

申请日：2007-06-12

申请人： Wilhelm Diesch ,  Dieter Klotz ,  Patrik Sieberling ,  Wolfgang Werner

发明人： Wilhelm Diesch ,  Dieter Klotz ,  Patrik Sieberling ,  Wolfgang Werner

IPC分类号： H04L12/28

CPC分类号： H04L49/901 ,  H04L49/90

摘要： A method is specified for the operation of an automation device provided for the receiving of telegrams together with such an automation device, which is distinguished by the fact that the automation device manages a resource pool for telegrams which are arriving or received, that the automation device distinguishes between active and new communication relationships with a remote communication participant and that for each new communication relationship a free resource is selected from the resource pool and thereafter is used for this communication relationship, which thereby becomes an active communication relationship.

摘要翻译： 为自动化设备的操作规定了一种用于与这样的自动化设备一起接收电报的自动化设备的操作，该自动化设备的区别在于自动化设备管理到达或接收的报文的资源池，自动化设备 区分与远程通信参与者的活动和新的通信关系，并且对于每个新的通信关系，从资源池中选择一个空闲资源，此后将被用于该通信关系，从而成为主动通信关系。

公开(公告)号：US20100102871A1

公开(公告)日：2010-04-29

申请号：US12258988

申请日：2008-10-27

申请人： Wolfgang Werner

发明人： Wolfgang Werner

IPC分类号： H03K3/01

CPC分类号： H03K17/687 ,  H01L24/03 ,  H01L24/05 ,  H01L24/06 ,  H01L24/48 ,  H01L24/49 ,  H01L29/0696 ,  H01L29/407 ,  H01L29/7803 ,  H01L29/7804 ,  H01L29/7813 ,  H01L2224/04042 ,  H01L2224/05 ,  H01L2224/05553 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48247 ,  H01L2224/49 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01033 ,  H01L2924/0106 ,  H01L2924/01082 ,  H01L2924/12035 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/3025 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599

摘要： An electronic circuit and a method for controlling a power field effect transistor. The electronic circuit comprises a power field effect transistor having a semiconductor body, which has a drain zone, a drift zone, a source zone and a bulk zone. The power field effect transistor further comprises a gate and a field plate. The field plate is placed adjacent to the drift zone and is isolated from the drift zone. A switch circuitry is provided for electrically connecting the field plate depending on the drain-source voltage such that the field plate is electrically connected to the drain zone, if |UDS|>UT, where UT is a predetermined voltage, and if |UDS|>UT, the field plate is connected to an electrode having an electrode-source voltage UES.

摘要翻译： 一种用于控制功率场效应晶体管的电子电路和方法。 电子电路包括具有半导体主体的功率场效应晶体管，该半导体主体具有漏极区，漂移区，源极区和主体区。 功率场效应晶体管还包括栅极和场板。 场平板放置在漂移区附近，并与漂移区隔离。 提供开关电路，用于根据漏 - 源电压电场连接场板，使得如果| UDS |> UT，其中UT是预定电压，则场板电连接到漏区，如果| UDS | > UT，场板连接到具有电极源电压UES的电极。