公开(公告)号：US4595601A

公开(公告)日：1986-06-17

申请号：US736211

申请日：1985-05-20

申请人： Keiji Horioka ,  Haruo Okano ,  Makoto Sekine

发明人： Keiji Horioka ,  Haruo Okano ,  Makoto Sekine

IPC分类号： C04B41/45 ,  C04B41/81 ,  C23C8/04 ,  C23C16/04 ,  H01L21/316 ,  H01L21/32 ,  H01L21/762 ,  B05D3/06

CPC分类号： H01L21/02238 ,  C04B41/4505 ,  C04B41/81 ,  C23C16/047 ,  C23C8/04 ,  H01L21/02255 ,  H01L21/31612 ,  H01L21/31662 ,  H01L21/32 ,  H01L21/76224 ,  H01L21/76281

摘要： An insulation layer is selectively formed by exposing the surface of a workpiece to an atmosphere comprising a mixture of a halogen-based gas and a raw gas containing a compoundable element chemically bondable with an element of a material constituting surface layer of the workpiece to form an insulating compound. The surface layer of the workpiece is formed of a non-insulating material, such as a metallic material or a semiconductor material. Light rays are directly irradiated on the selected region or regions of the surface of the workpiece through the atmosphere of the gaseous mixture, thereby dissociating said halogen-based gas. As a result, a layer comprising the insulating compound is formed on the selected region of the surface of the workpiece on which the light rays have been directly irradiated.

摘要翻译： 通过将工件的表面暴露于包含卤素类气体和含有与构成工件的表面层的材料的元素进行化学键合的可复合元素的原料气体的混合物的气氛来选择性地形成绝缘层，以形成 绝缘化合物。 工件的表面层由诸如金属材料或半导体材料的非绝缘材料形成。 通过气体混合物的气氛将光线直接照射在工件表面的选定区域或区域上，从而解离所述卤素类气体。 结果，在直接照射光线的工件的表面的选定区域上形成包含绝缘化合物的层。

公开(公告)号：US08936696B2

公开(公告)日：2015-01-20

申请号：US13011014

申请日：2011-01-21

申请人： Roger Alan Lindley ,  Jingbao Liu ,  Bryan Y. Pu ,  Keiji Horioka

发明人： Roger Alan Lindley ,  Jingbao Liu ,  Bryan Y. Pu ,  Keiji Horioka

IPC分类号： C23F1/00 ,  H01L21/306 ,  C23C16/00 ,  H01J37/32

CPC分类号： H01J37/32623 ,  H01J37/3266 ,  H01J37/32688

摘要： A magnetic field generator which provides greater control over the magnetic field is provided. The magnetic field generator has a plurality of overlapping main magnetic coil sections for forming a magnetic field generally parallel to the top surface of the supporting member. In other embodiments, sub-magnetic coil sections are placed symmetrically around the main magnetic coil sections.

摘要翻译： 提供了提供对磁场的更大控制的磁场发生器。 磁场发生器具有多个重叠的主磁线圈段，用于形成大致平行于支撑构件的顶表面的磁场。 在其他实施例中，副磁性线圈部分围绕主电磁线圈部分对称放置。

公开(公告)号：US07972469B2

公开(公告)日：2011-07-05

申请号：US11738505

申请日：2007-04-22

申请人： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger A. Lindley ,  Hong S. Yang

发明人： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger A. Lindley ,  Hong S. Yang

IPC分类号： H01L21/00

CPC分类号： H01J37/3266 ,  H01J37/32623

摘要： Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a plasma control magnet assembly includes a plurality of magnets arranged in a predetermined pattern that generate a magnetic field having a strength greater than 10 Gauss in a region proximate the assembly and less than 10 Gauss in a region remote from the assembly.

摘要翻译： 本发明的实施例涉及等离子体处理装置及其使用方法。 在一些实施例中，等离子体控制磁体组件包括以预定图案布置的多个磁体，其在靠近组件的区域中产生强度大于10高斯的磁场，并且在远离组件的区域中小于10高斯。

公开(公告)号：US20110008969A1

公开(公告)日：2011-01-13

申请号：US12886259

申请日：2010-09-20

申请人： Christopher D. Bencher ,  Keiji Horioka

发明人： Christopher D. Bencher ,  Keiji Horioka

IPC分类号： H01L21/311 ,  H01L21/306

CPC分类号： H01L21/3081 ,  H01L21/0332 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/3086 ,  H01L21/3088 ,  H01L21/31144 ,  H01L21/32139

摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask and a spacer mask is first provided. The sacrificial mask is comprised of a series of lines and the spacer mask has spacer lines adjacent to the sidewalls of the series of lines. Next, the spacer mask is cropped. Finally, the sacrificial mask is removed to provide a cropped spacer mask. The cropped spacer mask doubles the frequency of the series of lines of the sacrificial mask.

摘要翻译： 对半导体掩模的制造方法进行说明。 首先提供具有牺牲掩模和间隔掩模的半导体叠层。 牺牲掩模由一系列线组成，并且间隔物掩模具有与该系列线的侧壁相邻的间隔线。 接下来，裁剪间隔掩模。 最后，去除牺牲掩模以提供裁剪的间隔物掩模。 裁剪的间隔掩模将牺牲掩模的一系列线的频率加倍。

公开(公告)号：US20080299465A1

公开(公告)日：2008-12-04

申请号：US11875205

申请日：2007-10-19

申请人： CHRISTOPHER D. BENCHER ,  Keiji Horioka

发明人： CHRISTOPHER D. BENCHER ,  Keiji Horioka

IPC分类号： G03F1/00

CPC分类号： H01L21/0332 ,  H01L21/0273 ,  H01L21/0274 ,  H01L21/0337 ,  Y10S438/947 ,  Y10S438/95

摘要： A method for fabricating a semiconductor mask is described. A semiconductor stack having a sacrificial mask comprised of a series of lines is first provided. A spacer mask having spacer lines adjacent to the sidewalls of the series of lines of the sacrificial mask is then formed. The spacer mask also has interposed lines between the spacer lines. Finally, the sacrificial mask is removed to provide only the spacer mask. The spacer mask having interposed lines triples the frequency of the series of lines of the sacrificial mask.

摘要翻译： 对半导体掩模的制造方法进行说明。 首先提供具有由一系列线组成的牺牲掩模的半导体叠层。 然后形成具有与牺牲掩模的一系列线的侧壁相邻的间隔线的间隔物掩模。 间隔物掩模还在间隔物线之间插入线。 最后，去除牺牲掩模以仅提供间隔物掩模。 具有插入的线的间隔掩模将牺牲掩模的一系列线的频率提高三倍。

公开(公告)号：US20080260966A1

公开(公告)日：2008-10-23

申请号：US11738507

申请日：2007-04-22

申请人： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

发明人： Hiroji Hanawa ,  Andrew Nguyen ,  Keiji Horioka ,  Kallol Bera ,  Kenneth S. Collins ,  Lawrence Wong ,  Martin Jeff Salinas ,  Roger Alan Lindley ,  Hong S. Yang

IPC分类号： H05H1/24

CPC分类号： H01J37/3266 ,  H01J37/32623

摘要： Embodiments of the present invention relate to plasma processing apparatus and methods of use thereof. In some embodiments, a method of controlling a plasma in a process chamber includes providing a chamber for processing a substrate and having a processing volume defined therein wherein a plasma is to be formed during operation, the chamber further having a plasma control magnet assembly comprising a plurality of magnets that provide a magnetic field having a magnitude is greater than about 10 Gauss in an upper region of the processing volume and less than about 10 Gauss in a lower region of the processing volume proximate a substrate to be processed; supplying a process gas to the chamber; and forming a plasma in the processing volume from the process gas.

摘要翻译： 本发明的实施例涉及等离子体处理装置及其使用方法。 在一些实施例中，控制处理室中的等离子体的方法包括提供用于处理衬底并具有其中限定的处理体积的室，其中在操作期间将形成等离子体，所述室还具有等离子体控制磁体组件，其包括 提供具有幅度的磁场的多个磁体在处理体积的上部区域中大于约10个高斯，并且在处理体积的接近待处理衬底的较低区域中小于约10个高斯; 向所述室供应处理气体; 以及从所述处理气体在所述处理容积中形成等离子体。

公开(公告)号：US20080050922A1

公开(公告)日：2008-02-28

申请号：US11508345

申请日：2006-08-23

申请人： Hairong Tang ,  Xiaoye Zhao ,  Keiji Horioka ,  Jeremiah T. P. Pender

发明人： Hairong Tang ,  Xiaoye Zhao ,  Keiji Horioka ,  Jeremiah T. P. Pender

IPC分类号： H01L21/461 ,  H01L21/302

CPC分类号： H01L21/31116 ,  H01J37/32862

摘要： A chamber dry cleaning process particularly useful after a dielectric plasma etch process which exposes an underlying copper metallization. After the dielectric etch process, the production wafer is removed from the chamber and a cleaning gas is excited into a plasma to clean the chamber walls and recover the dielectric etching characteristic of the chamber. Preferably, the cleaning gas is reducing such as hydrogen gas with the addition of nitrogen gas. Alternatively, the cleaning gas may an oxidizing gas. If the wafer pedestal is vacant during the cleaning, it is not electrically biased. If a dummy wafer is placed on the pedestal during cleaning, the pedestal is biased. The cleaning process is advantageously performed every wafer cycle.

摘要翻译： 在暴露下面的铜金属化的电介质等离子体蚀刻工艺之后，室干燥方法特别有用。 在电介质蚀刻工艺之后，将生产晶片从腔室中取出，将清洁气体激发到等离子体中以清洁腔室壁并恢复腔室的介电蚀刻特性。 优选地，通过添加氮气，清洁气体如氢气还原。 或者，清洁气体可以是氧化气体。 如果晶片基座在清洁过程中空出，则不会电气偏置。 如果在清洁时将底座放置在基座上，则基座偏置。 有利地，每个晶片周期执行清洁处理。

公开(公告)号：US06261428B1

公开(公告)日：2001-07-17

申请号：US08183787

申请日：1994-01-21

申请人： Toshihisa Nozawa ,  Keiji Horioka ,  Isahiro Hasegawa

发明人： Toshihisa Nozawa ,  Keiji Horioka ,  Isahiro Hasegawa

IPC分类号： C23C1434

CPC分类号： H01J37/3408 ,  H01J37/3455

摘要： A magnetron plasma process apparatus comprises a process chamber, an upper electrode and a lower electrode, both located within the process chamber and extending parallel to each other, a gas-supplying system for supplying a process gas into the space between the electrodes, a high-frequency power supply for generating an electric field, to thereby to form plasma from the process gas, and magnetic field generating section for generating a magnetic field which extends through the space between the electrodes. The magnetic field generating section has a pair of permanent magnets located outside the process chamber, sandwiching the space between the electrodes. The magnetic field generated by this section extends through said space, from one of the magnets to the other thereof and substantially parallel to the electrodes, and serves to achieve magnetron plasma process on an object placed on the lower electrode.

摘要翻译： 磁控管等离子体处理装置包括处理室，上电极和下电极，两者都位于处理室内并且彼此平行延伸;气体供应系统，用于将处理气体供应到电极之间的空间中，高 用于产生电场，从而从处理气体形成等离子体的频率电源以及用于产生延伸穿过电极之间的空间的磁场的磁场产生部。 磁场产生部分具有位于处理室外的一对永磁体，夹在电极之间的空间。 由该部分产生的磁场延伸穿过所述空间，从一个磁体到另一个磁体并且基本上平行于电极，并且用于在放置在下电极上的物体上实现磁控管等离子体处理。

公开(公告)号：US5707501A

公开(公告)日：1998-01-13

申请号：US467600

申请日：1995-06-06

申请人： Soichi Inoue ,  Tadahito Fujisawa ,  Shin-ichi Ito ,  Takashi Sato ,  Shuichi Tamamushi ,  Keiji Horioka

发明人： Soichi Inoue ,  Tadahito Fujisawa ,  Shin-ichi Ito ,  Takashi Sato ,  Shuichi Tamamushi ,  Keiji Horioka

IPC分类号： G03F7/20 ,  C23C14/34

CPC分类号： G03F7/70066 ,  G03F7/70091 ,  G03F7/701 ,  G03F7/70125 ,  G03F7/70241 ,  G03F7/70333

摘要： A projection exposure apparatus is constituted by a first focusing optical system for focusing light from a mercury-vapor lamp as a light source, a uniforming optical system for uniforming the focused light, a second focusing optical system for focusing the uniformed light and radiating the light onto a reticle mask, and a projection optical system for projecting the light, transmitted through the reticle, onto a wafer. The apparatus is designed to project/expose a predetermined mask pattern, formed on the mask, onto the wafer through the projection optical system. A special stop (i.e., a four-eye filter) is arranged as a secondary source for uniformly illuminating the mask. The special stop serves to set an intensity distribution within the exit plane of the secondary source such that intensities in four regions quadruple-symmetrical about the optical axis of the secondary source and decentered therefrom are higher than intensities in other regions. A translucent pattern is formed as the mask on a light-transmitting substrate. The phase difference between light passing through the translucent film and light passing through the light-transmitting substrate is represented by 180.times.(2n+1).+-.30 (degree) (where n is an integer). In addition, the apparatus includes a halftone mask which allows an amplitude transmittance T of the translucent film and an amplitude transmittance T0 of the light-transmitting substrate to satisfy 0.01.times.T0.ltoreq.T.ltoreq.0.30.times.T0. Furthermore, a projection exposure apparatus is provided, in which a light source and a secondary source is coupled to each other through fibers, and an optical modulator is inserted therebetween so that the spatial distribution of light amounts can be electrically and optically controlled.

摘要翻译： 投影曝光装置由用于聚焦来自水银灯的光作为光源的第一聚焦光学系统，用于使聚焦光均匀的均匀的光学系统，用于聚焦均匀的光并照射光的第二聚焦光学系统 以及用于将透过该掩模版的光投射到晶片上的投影光学系统。 该设备被设计成通过投影光学系统将形成在掩模上的预定掩模图案投影/曝光到晶片上。 布置特殊停止（即，四眼滤波器）作为用于均匀照明面罩的次级源。 特殊停止用于设定次级源的出射平面内的强度分布，使得围绕次级光源的光轴四倍对称的四个区域的强度高于其他区域的强度。 在透光性基板上形成作为掩模的半透明图案。 通过透光性膜的光和通过透光性基板的光的相位差由180×（2n + 1）+/- 30（度）（n为整数）表示。 此外，该设备包括半透明掩模，其允许透光性膜的振幅透射率T和透光性基板的振幅透过率T0满足0.01×T0≤T≤0.30×T0。 此外，提供一种投影曝光装置，其中光源和次级光源通过光纤彼此耦合，并且光学调制器插入其间，使得光量的空间分布可以被电和光学地控制。

公开(公告)号：US5698070A

公开(公告)日：1997-12-16

申请号：US175513

申请日：1993-12-30

申请人： Yoshihisa Hirano ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Isahiro Hasegawa ,  Keiji Horioka

发明人： Yoshihisa Hirano ,  Yoshifumi Tahara ,  Hiroshi Nishikawa ,  Isahiro Hasegawa ,  Keiji Horioka

IPC分类号： H01L21/00 ,  H05H1/00

CPC分类号： H01L21/67109 ,  H01J37/3244 ,  H01J2237/2001

摘要： A method of etching oxide film on a semiconductor wafer comprising pushing the wafer against the top of lower electrode while facing it to an upper electrode, decompressing to exhaust a chamber, forming electric field between the wafer and the upper electrode under decompressed state and generating the gas plasma of process gas while supplying the process gas to an oxide-film-formed surface of the wafer through the upper electrode, introducing auxiliary gas to the peripheral portion of the wafer when the gas plasma of process gas is acting on the wafer, and controlling the etching reaction of the gas plasma relative to the peripheral portion of the wafer by auxiliary gas.

摘要翻译： 一种在半导体晶片上蚀刻氧化膜的方法，包括将晶片压靠在下电极的顶部同时面向上电极，减压以排出室，在解压缩状态下在晶片和上电极之间形成电场，并产生 在处理气体的气体等离子体中，同时通过上部电极将工艺气体供给到晶片的氧化物膜形成表面，当处理气体的气体等离子体作用在晶片上时，将辅助气体引入晶片的周边部分，以及 通过辅助气体控制气体等离子体相对于晶片的周边部分的蚀刻反应。