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    Process for purifying crude p-aminophenol
    31.
    发明授权
    Process for purifying crude p-aminophenol 失效
    粗制对氨基苯酚的纯化方法

    公开(公告)号：US4139562A

    公开(公告)日：1979-02-13

    申请号：US886129

    申请日：1978-03-13

    申请人： Ryuichi Yamamoto ,  Yutaka Hirai ,  Teruyuki Nagata

    发明人： Ryuichi Yamamoto ,  Yutaka Hirai ,  Teruyuki Nagata

    IPC分类号： A01N43/90 ,  C07C215/76 ,  C07C85/26

    CPC分类号： A01N43/90 ,  C07C215/76

    摘要： A process for purifying crude p-aminophenol which contains 4,4'-diaminodiphenyl ether and other impurities, which process comprising adding an alkali metal compound to the crude p-aminophenol in an aqueous medium in an atmosphere of an inert gas and, if necessary, in the presence of a reducing agent to give an aqueous solution of an alkali metal salt of p-aminophenol, and contacting the aqueous solution with an inert organic solvent immiscible with water to permit 4,4'-diaminodiphenyl ether and other impurities to be separated by extraction in the solvent.

    摘要翻译： 一种纯化含有4,4'-二氨基二苯醚和其它杂质的粗对氨基苯酚的方法，该方法包括在惰性气体气氛中的水介质中将粗碱对氨基苯酚加入碱金属化合物，如有必要 在还原剂的存在下，得到对氨基苯酚的碱金属盐的水溶液，并使水溶液与不与水混溶的惰性有机溶剂接触，以使4,4'-二氨基二苯醚和其它杂质为 通过在溶剂中萃取分离。

    Process for preparing aromatic urethanes
    32.
    发明授权
    Process for preparing aromatic urethanes 失效
    制备芳香族聚氨酯的方法

    公开(公告)号：US4080365A

    公开(公告)日：1978-03-21

    申请号：US687933

    申请日：1976-05-19

    申请人： Yutaka Hirai ,  Katsuharu Miyata ,  Seiji Hasegawa

    发明人： Yutaka Hirai ,  Katsuharu Miyata ,  Seiji Hasegawa

    IPC分类号： C07D279/18 ,  B01J27/00 ,  B01J27/02 ,  B01J31/00 ,  B01J31/04 ,  C07B61/00 ,  C07C20060101 ,  C07C67/00 ,  C07C239/00 ,  C07C269/00 ,  C07D239/42 ,  C07D285/20 ,  C07C125/06

    CPC分类号： C07C271/06

    摘要： Aromatic urethanes can be produced in exceedingly improved yield when an aromatic nitro compound, an organic compound containing hydroxyl groups, and carbon monoxide are reacted in the presence of a catalyst composed of metallic (elemental) selenium or a selenium compound and a base serving as promoter, to which reaction system an aromatic amino compound and/or an aromatic urea compound which will be secondarily produced by the reaction has been previously added in order to suppress side reactions. For instance, when nitrobenzene, methanol and carbon monoxide are interacted in the presence of metallic selenium and triethylenediamine, the conversion of nitrobenzene is 68% and the percentage of formed methyl N-phenylcarbamate to the interacted nitrobenzene is 80%, whereas when the reaction is effected under the same reaction conditions indicated above with addition to the reaction system of aniline in an amount of about 15 wt. % of the nitrobenzene, the conversion of nitrobenzene and the percentage of formed methyl N-phenylcarbamate reach 100% and 98%, respectively.

    摘要翻译： 当芳族硝基化合物，含羟基的有机化合物和一氧化碳在由金属（元素）硒或硒化合物组成的催化剂和作为助催化剂的碱的存在下反应时，可以以极高的产率生产芳香族聚氨酯。 为了抑制副反应，预先加入将通过反应二次生成的芳香族氨基化合物和/或芳香族脲化合物的反应体系。 例如，当硝基苯，甲醇和一氧化碳在金属硒和三亚乙基二胺的存在下相互作用时，硝基苯的转化率为68％，形成的N-苯基氨基甲酸甲酯与相互作用的硝基苯的百分比为80％，而当反应为 在与上述相同的反应条件下加入约15重量％的苯胺的反应体系进行。 硝基苯的百分比，硝基苯的转化率和形成的N-苯基氨基甲酸甲酯的百分比分别达到100％和98％。

    Method for forming deposited film
    33.
    发明授权
    Method for forming deposited film 失效
    沉积膜形成方法

    公开(公告)号：US6077718A

    公开(公告)日：2000-06-20

    申请号：US407242

    申请日：1995-03-20

    申请人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

    发明人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

    IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/48 ,  C23C16/52 ,  C23C16/54 ,  G01R31/26

    CPC分类号： C23C16/452 ,  C23C16/4408 ,  C23C16/48 ,  C23C16/52 ,  C23C16/54

    摘要： A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

    摘要翻译： 提供一种用于形成沉积膜的装置。 它包括（a）反应室; （b）加热装置，用于加热放置在反应室中的基板; （c）原料气体引入装置，用于将起始气体引入反应室，气体导入装置具有交替间歇地将两种或多种气体引入反应室的装置; （d）分解装置，用于分解反应室中的起始气体，以便在反应室中由所述加热装置加热的基板上形成沉积膜，该分解装置具有照射至少一种光的光源 进入反应室以分解起始气体。

    Device for forming deposited film
    34.
    发明授权
    Device for forming deposited film 失效
    用于形成沉积膜的装置

    公开(公告)号：US5769950A

    公开(公告)日：1998-06-23

    申请号：US450624

    申请日：1995-05-25

    申请人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

    发明人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

    IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/48 ,  C23C16/52 ,  C23C16/54 ,  C23C16/00

    CPC分类号： C23C16/4408 ,  C23C16/452 ,  C23C16/48 ,  C23C16/52 ,  C23C16/54

    摘要： A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

    摘要翻译： 提供一种用于形成沉积膜的装置。 它包括（a）反应室; （b）加热装置，用于加热放置在反应室中的基板; （c）原料气体引入装置，用于将起始气体引入反应室，气体导入装置具有交替间歇地将两种或多种气体引入反应室的装置; （d）分解装置，用于分解反应室中的起始气体，以便在反应室中由所述加热装置加热的基板上形成沉积膜，该分解装置具有照射至少一种光的光源 进入反应室以分解起始气体。

    Process for forming and etching a film to effect specific crystal growth from activated species
    35.
    发明授权
    Process for forming and etching a film to effect specific crystal growth from activated species 失效
    用于形成和蚀刻膜以从活化物质实现特定晶体生长的方法

    公开(公告)号：US5591492A

    公开(公告)日：1997-01-07

    申请号：US396065

    申请日：1995-02-28

    申请人： Yutaka Hirai ,  Jinsho Matsuyama ,  Shigeru Shirai

    发明人： Yutaka Hirai ,  Jinsho Matsuyama ,  Shigeru Shirai

    IPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/205 ,  B05D3/00 ,  C30B28/14 ,  H05H1/02

    CPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/02422 ,  H01L21/0245 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

    摘要： A process for forming a deposited film comprises the steps of:(a) arranging previously a substrate for formation of a deposited film in a film forming space;(b) forming a deposited film on said substrate by introducing an activated species (A) formed by decomposition of a compound (SX) containing silicon and a halogen and an activated species (B) formed from a chemical substance (B) for film formation which is chemically mutually reactive with said activated species (A) separately from each other into said film forming space to effect chemical reaction therebetween; and(c) exposing the deposited film growth surface to a gaseous substance (E) having etching action on the deposited film to be formed during the film forming step (b) to apply etching action on the deposited film growth surface, thereby effecting preferentially crystal growth in a specific face direction.

    摘要翻译： 一种形成沉积膜的方法包括以下步骤：（a）在成膜空间中预先布置用于形成沉积膜的衬底; （b）通过引入由含有硅和卤素的化合物（SX）分解而形成的活化物质（A）和由用于成膜的化学物质（B）形成的活化物质（B））在所述基材上形成沉积膜 其与所述活化物质（A）在化学上相互反应，彼此分离成所述成膜空间，以在其间进行化学反应; 和（c）在成膜步骤（b）中将沉积的膜生长表面暴露于对待形成的沉积膜上具有蚀刻作用的气态物质（E），以在沉积膜生长表面上施加蚀刻作用，从而优先实现晶体 在特定面向方向的增长。