公开(公告)号：US4920387A

公开(公告)日：1990-04-24

申请号：US406182

申请日：1989-09-13

申请人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

发明人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/18

CPC分类号： H01L33/18 ,  B82Y20/00 ,  H01L33/0012 ,  H01L33/0058 ,  H01L33/06 ,  H05B33/145

摘要： A light emitting device includes a luminescent layer having at least two layers comprising non-single crystalline silicon containing hydrogen atoms laminated and having a homo-junction, and at least a pair of electrodes connected electrically to the luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 10.sup.16 cm.sup.-3.eV.sup.-1 or less.

摘要翻译： 发光器件包括发光层，其具有至少两层，包含层叠并具有均聚点的氢原子的非单晶硅，以及至少一对与发光层电连接的电极，非单晶硅 具有2.0eV以上的光学带隙和1016cm -3eV-1以下的中间间隙的局部水平密度的层。

公开(公告)号：US6077718A

公开(公告)日：2000-06-20

申请号：US407242

申请日：1995-03-20

申请人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

发明人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/48 ,  C23C16/52 ,  C23C16/54 ,  G01R31/26

CPC分类号： C23C16/452 ,  C23C16/4408 ,  C23C16/48 ,  C23C16/52 ,  C23C16/54

摘要： A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

摘要翻译： 提供一种用于形成沉积膜的装置。 它包括（a）反应室; （b）加热装置，用于加热放置在反应室中的基板; （c）原料气体引入装置，用于将起始气体引入反应室，气体导入装置具有交替间歇地将两种或多种气体引入反应室的装置; （d）分解装置，用于分解反应室中的起始气体，以便在反应室中由所述加热装置加热的基板上形成沉积膜，该分解装置具有照射至少一种光的光源 进入反应室以分解起始气体。

公开(公告)号：US5769950A

公开(公告)日：1998-06-23

申请号：US450624

申请日：1995-05-25

申请人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

发明人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

IPC分类号： C23C16/44 ,  C23C16/452 ,  C23C16/48 ,  C23C16/52 ,  C23C16/54 ,  C23C16/00

CPC分类号： C23C16/4408 ,  C23C16/452 ,  C23C16/48 ,  C23C16/52 ,  C23C16/54

摘要： A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

摘要翻译： 提供一种用于形成沉积膜的装置。 它包括（a）反应室; （b）加热装置，用于加热放置在反应室中的基板; （c）原料气体引入装置，用于将起始气体引入反应室，气体导入装置具有交替间歇地将两种或多种气体引入反应室的装置; （d）分解装置，用于分解反应室中的起始气体，以便在反应室中由所述加热装置加热的基板上形成沉积膜，该分解装置具有照射至少一种光的光源 进入反应室以分解起始气体。

公开(公告)号：US5273919A

公开(公告)日：1993-12-28

申请号：US869069

申请日：1992-04-16

申请人： Masafumi Sano ,  Katsuji Takasu ,  Hisanori Tsuda ,  Yutaka Hirai

发明人： Masafumi Sano ,  Katsuji Takasu ,  Hisanori Tsuda ,  Yutaka Hirai

IPC分类号： H01L29/15 ,  H01L29/786 ,  H01L21/265

CPC分类号： H01L29/78687 ,  H01L29/154 ,  H01L29/78669 ,  Y10S148/15 ,  Y10S148/16

摘要： A method of producing a thin film field effect transistor. An insulating thin film layer is formed on a gate electrode subsequent to the gate electrode being formed on a substrate. A multilayer structure is formed on the insulating thin film layer subsequent to the insulating thin film layer being formed on the gate electrode by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline material layers.

摘要翻译： 一种薄膜场效应晶体管的制造方法。 绝缘薄膜层在形成于基板上的栅电极之后的栅电极上形成。 通过交替层叠多个非单晶半导体材料层和多个非单晶材料层，在绝缘薄膜层之后形成绝缘薄膜层，形成多层结构。

公开(公告)号：US4987460A

公开(公告)日：1991-01-22

申请号：US406815

申请日：1989-09-13

申请人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

发明人： Katsuji Takasu ,  Masafumi Sano ,  Hisanori Tsuda ,  Yutaka Hirai

IPC分类号： H01L33/00 ,  H01L33/06 ,  H01L33/18 ,  H01L33/42

CPC分类号： H01L33/42 ,  B82Y20/00 ,  H01L33/0012 ,  H01L33/0058 ,  H01L33/06 ,  H01L33/18 ,  H05B33/145

摘要： A light emitting device has a luminescent layer having at least two layers of a non-single crystalline material containing silicon atoms, carbon atoms and fluorine atoms laminated and having a homojunction, and at least a pair of electrodes connected electrically to said luminescent layer, the non-single crystalline silicon layer having an optical band gap of 2.0 eV or higher and a localized level density at mid-gap of 5.times.10.sup.16 cm.sup.-3.ev.sup.-1 or less.

摘要翻译： 发光器件具有发光层，其具有层叠并具有同质结的硅原子，碳原子和氟原子的至少两层的非单晶材料，以及至少一对电连接到所述发光层的电极， 光学带隙为2.0eV以上的非单晶硅层和中间间隙的局部水平密度为5×10 16 cm -3ev-1以下。

公开(公告)号：US4921722A

公开(公告)日：1990-05-01

申请号：US786700

申请日：1985-10-11

申请人： Yoshiyuki Osada ,  Hisanori Tsuda ,  Masafumi Sano ,  Satoshi Omata ,  Katsuji Takasu ,  Yutaka Hirai

发明人： Yoshiyuki Osada ,  Hisanori Tsuda ,  Masafumi Sano ,  Satoshi Omata ,  Katsuji Takasu ,  Yutaka Hirai

IPC分类号： H01L31/04 ,  C23C16/24 ,  C23C16/452 ,  H01L21/205 ,  H01L21/263

CPC分类号： C23C16/24 ,  C23C16/452 ,  H01L21/02532 ,  H01L21/0262

摘要： A method for forming a deposited film by forming a gaseous atmosphere of a hydrogenated silicon compound of the general formula Si.sub.n H.sub.m wherein n is an integer of 1 or more, and m is an integer of 2 or more in a chamber housing a substrate therein and forming a deposited film containing silicon on said substrate by excitation of said compound to effect decomposition or polymerization thereof comprises introducing a gaseous radical polymerization initiator into said chamber and utilizing light energy, thereby exciting said compound to effect decomposition or polymerization thereof.

摘要翻译： 通过形成通式SinHm的氢化硅化合物的气氛形成沉积膜的方法，其中n为1以上的整数，m为2以上的整数，在容纳基板的室内形成 通过激发所述化合物进行分解或聚合，在所述基板上含有硅的沉积膜包括将气态自由基聚合引发剂引入所述​​室并利用光能，由此激发所述化合物以进行其分解或聚合。

公开(公告)号：US4893154A

公开(公告)日：1990-01-09

申请号：US309023

申请日：1989-02-08

申请人： Yutaka Hirai ,  Masafumi Sano ,  Hisanori Tsuda ,  Katsuji Takasu

发明人： Yutaka Hirai ,  Masafumi Sano ,  Hisanori Tsuda ,  Katsuji Takasu

IPC分类号： H01L33/06 ,  H01L33/16 ,  H01L33/34 ,  H01L33/42

CPC分类号： H01L33/06 ,  B82Y20/00 ,  H01L33/0033

摘要： An electroluminescent device, which emits light by recombination of the carriers injected or excited by light of energy of electrical field, comprising an active layer which includes a semiconductor layer of a super-lattice structure. The layer in the super-lattice structure is changed in effective band gap by an electrical field externally applied to vary the emitted light wavelength. The semiconductor layer of said super-lattice structure comprising an non-single crystalline semiconductor material.

摘要翻译： 一种电致发光器件，其通过由电场能量的光注入或激发的载流子的复合而发光，该有源层包括超晶格结构的半导体层。 超晶格结构中的层通过外部施加的电场改变有效带隙，以改变发射的光波长。 所述超晶格结构的半导体层包括非单晶半导体材料。

公开(公告)号：US4645684A

公开(公告)日：1987-02-24

申请号：US783490

申请日：1985-10-03

申请人： Yoshiyuki Osada ,  Hisanori Tsuda ,  Masafumi Sano ,  Satoshi Omata ,  Katsuji Takasu ,  Yutaka Hirai

发明人： Yoshiyuki Osada ,  Hisanori Tsuda ,  Masafumi Sano ,  Satoshi Omata ,  Katsuji Takasu ,  Yutaka Hirai

IPC分类号： H01L51/42 ,  B05D3/06 ,  B05D7/24 ,  H01L21/20 ,  H01L21/205 ,  H01L31/04

CPC分类号： B05D1/60 ,  B05D1/62 ,  B05D3/061 ,  Y02E10/549

摘要： A method for forming a deposited film comprises forming in a vacuum chamber housing a substrate therein a deposited film containing silicon on the substrate by subjecting a gas represented by the general formula: ##STR1## wherein R.sup.1, R.sup.2, R.sup.3 and R.sup.4, can be the same or different and are each independently hydrogen or a hydrocarbon group, to polymerization.

摘要翻译： 一种用于形成沉积膜的方法包括在真空室中形成一个在基片上容纳基底的沉积膜，所述沉积膜在基底上通过使由下列通式表示的气体：其中R1，R2，R3和R4可以是 相同或不同，各自独立地为氢或烃基，进行聚合。

公开(公告)号：US5261961A

公开(公告)日：1993-11-16

申请号：US908891

申请日：1992-07-08

申请人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

发明人： Katsuji Takasu ,  Hisanori Tsuda ,  Masafumi Sano ,  Yutaka Hirai

IPC分类号： C23C16/48 ,  C23C16/52 ,  C23C16/54 ,  C23C16/46 ,  C23C16/50

CPC分类号： C23C16/54 ,  C23C16/48 ,  C23C16/52

摘要： A device for forming a deposited film is provided. It comprises (a) a reaction chamber; (b) a heating means for heating a substrate placed in the reaction chamber; (c) a starting gas introducing means for introducing starting gases into the reaction chamber, the gas introducing means having a means for introducing two or more kinds of gases alternately and intermittently into the reaction chamber; (d) a decomposing means for decomposing the starting gases in the reaction chamber so as to form a deposited film on the substrate heated by said heating means in the reaction chamber, the decomposing means having a light source which irradiates at least one kind of light into the reaction chamber to decompose the starting gases.

摘要翻译： 提供一种用于形成沉积膜的装置。 它包括（a）反应室; （b）加热装置，用于加热放置在反应室中的基板; （c）原料气体引入装置，用于将起始气体引入反应室，气体导入装置具有交替间歇地将两种或多种气体引入反应室的装置; （d）分解装置，用于分解反应室中的起始气体，以便在反应室中由所述加热装置加热的基板上形成沉积膜，该分解装置具有照射至少一种光的光源 进入反应室以分解起始气体。

公开(公告)号：US4916510A

公开(公告)日：1990-04-10

申请号：US170101

申请日：1988-03-11

申请人： Masafumi Sano ,  Katsuji Takasu ,  Hisanori Tsuda ,  Yutaka Hirai

发明人： Masafumi Sano ,  Katsuji Takasu ,  Hisanori Tsuda ,  Yutaka Hirai

IPC分类号： H01L29/78 ,  H01L27/12 ,  H01L29/15 ,  H01L29/786

CPC分类号： H01L29/78669 ,  H01L29/154 ,  H01L29/78687

摘要： A thin film mesa type FET having a gate electrode formed on a substrate. An insulating thin film layer is formed on the gate electrode. A multilayer structure is formed on the insulating thin film layer by alternately laminating a number of non-monocrystalline semiconductor material layers and a number of non-monocrystalline insulating material layers. The thickness of the semiconductor layers is 5 to 500 .ANG..

摘要翻译： 一种薄膜台面型FET，其具有在基板上形成的栅电极。 在栅电极上形成绝缘薄膜层。 通过交替层叠多个非单晶半导体材料层和多个非单晶绝缘材料层，在绝缘薄膜层上形成多层结构。 半导体层的厚度为5至500埃。