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    IMPRINT LITHOGRAPHY APPARATUS AND METHOD
    32.
    发明申请
    IMPRINT LITHOGRAPHY APPARATUS AND METHOD 有权
    IMPRINT LITHOGRAPHY APPARATUS和方法

    公开(公告)号：US20100252960A1

    公开(公告)日：2010-10-07

    申请号：US12749823

    申请日：2010-03-30

    Applicant: Nikolay Iosad ,  Pascale Anne Maury

    Inventor： Nikolay Iosad ,  Pascale Anne Maury

    IPC: B29C59/16 ,  B28B11/08

    CPC classification number: G03F7/0002 ,  B82Y10/00 ,  B82Y40/00

    Abstract: An imprint lithography apparatus is disclosed that includes a first imprint template provided with pattern recesses and a second imprint template provided with pattern recesses, wherein the pattern recesses of the first imprint template are configured to form features on a substrate which interconnect laterally with features formed by the pattern recesses of the second imprint template, and wherein the pattern recesses of the second imprint template have a critical dimension which is three or more times greater than the critical dimension of the pattern recesses of the first imprint template.

    Abstract translation: 公开了一种压印光刻设备，其包括设置有图案凹部的第一印记模板和设置有图案凹部的第二印模模板，其中第一印模模板的图案凹槽被配置为在基板上形成特征，该基板横向互连， 第二印模模板的图形凹部，并且其中第二印模模板的图案凹部的临界尺寸比第一印模模板的图案凹槽的临界尺寸大三倍或更多倍。

    METHOD FOR DETERMINING ABERRATION SENSITIVITY OF PATTERNS
    34.
    发明申请
    METHOD FOR DETERMINING ABERRATION SENSITIVITY OF PATTERNS 有权

    公开(公告)号：US20250155824A1

    公开(公告)日：2025-05-15

    申请号：US19025718

    申请日：2025-01-16

    Applicant: ASML NETHERLAND B.V.

    Inventor： Jingjing LIU ,  Duan-Fu Stephen HSU ,  Xingyue PENG

    IPC: G03F7/00 ,  G05B19/4099

    Abstract: A method for determining process window limiting patterns based on aberration sensitivity associated with a patterning apparatus. The method includes obtaining (i) a first set of kernels and a second set of kernels associated with an aberration wavefront of the patterning apparatus and (ii) a design layout to be printed on a substrate via the patterning apparatus; and determining, via a process simulation using the design layout, the first set of kernels, and the second set of kernels, an aberration sensitivity map associated with the aberration wavefront, the aberration sensitivity map indicating how sensitive one or more portions of the design layout are to an individual aberrations and an interaction between different aberrations; determining, based on the aberration sensitivity map, the process window limiting pattern associated with the design layout having relatively high sensitivity compared to other portions of the design layout.

    METHOD FOR DETERMINING CURVILINEAR PATTERNS FOR PATTERNING DEVICE
    35.
    发明申请
    METHOD FOR DETERMINING CURVILINEAR PATTERNS FOR PATTERNING DEVICE 有权

    公开(公告)号：US20220121804A1

    公开(公告)日：2022-04-21

    申请号：US17564837

    申请日：2021-12-29

    Applicant: ASML NETHERLAND B.V.

    Inventor： Quan Zhang ,  Been-Der Chen ,  Rafael C. Howell ,  Jing Su ,  Yi Zou ,  Yen-Wen Lu

    IPC: G06F30/398 ,  G03F1/36 ,  G03F1/70 ,  G03F7/20

    Abstract: A method to determine a curvilinear pattern of a patterning device that includes obtaining (i) an initial image of the patterning device corresponding to a target pattern to be printed on a substrate subjected to a patterning process, and (ii) a process model configured to predict a pattern on the substrate from the initial image, generating, by a hardware computer system, an enhanced image from the initial image, generating, by the hardware computer system, a level set image using the enhanced image, and iteratively determining, by the hardware computer system, a curvilinear pattern for the patterning device based on the level set image, the process model, and a cost function, where the cost function (e.g., EPE) determines a difference between a predicted pattern and the target pattern, where the difference is iteratively reduced.

    METHODS FOR IDENTIFYING A PROCESS WINDOW BOUNDARY
    36.
    发明申请
    METHODS FOR IDENTIFYING A PROCESS WINDOW BOUNDARY 审中-公开

    公开(公告)号：US20180329311A1

    公开(公告)日：2018-11-15

    申请号：US15774583

    申请日：2016-10-07

    Applicant: ASML NETHERLAND B.V.

    Inventor： Lin Lee CHEONG ,  Wenjin HUANG ,  Bruno LA FONTAINE

    IPC: G03F7/20 ,  G05B19/4097

    CPC classification number: G03F7/70625 ,  G03F7/70641 ,  G05B19/4097 ,  G05B2219/45028

    Abstract: A method including: determining a value of a characteristic of a patterning process or a product thereof, at a current value of a processing parameter; determining whether a termination criterion is met by the value of the characteristic; if the termination criterion is not met, determining a new value of the processing parameter from the current value of the processing parameter and a prior value of the processing parameter, and setting the current value to the new value and repeating the determining steps; and if the termination criterion is met, providing the current value of the processing parameter as an approximation of a value of the processing parameter at which the characteristic has a target value.

    LITHOGRAPHIC APPARATUS
    37.
    发明申请
    LITHOGRAPHIC APPARATUS 审中-公开

    公开(公告)号：US20180224755A1

    公开(公告)日：2018-08-09

    申请号：US15949057

    申请日：2018-04-09

    Applicant: ASML Netherland B.V.

    Inventor： Hans BUTLER

    IPC: G03F7/20

    CPC classification number: G03F7/70725 ,  G03F7/70191 ,  G03F7/70516 ,  G03F7/70758 ,  G03F7/70775 ,  G03F7/70783 ,  G03F7/70825 ,  G03F7/7085 ,  G03F9/7019

    Abstract: A lithographic apparatus includes a patterning device support to support a patterning device, the patterning device system including a moveable structure movably arranged relative to an object, a patterning device holder movably arranged relative to the movable structure to hold the patterning device, an actuator to move the movable structure relative to the object, and an ultra short stroke actuator to move the patterning device holder with respect to the movable structure; a substrate support to hold a substrate; a projection system to project a patterned radiation beam onto a target portion of the substrate; a transmission image sensor for measuring a position of the patterned radiation beam downstream of the projection system; and a calibrator for determining a relationship between magnitude of an applied control signal to the ultra short stroke actuator and resulting change in position of the patterned radiation beam and/or patterning device holder and/or patterning device.

    METHODOLOGY TO GENERATE A GUIDING TEMPLATE FOR DIRECTED SELF-ASSEMBLY
    38.
    发明申请
    METHODOLOGY TO GENERATE A GUIDING TEMPLATE FOR DIRECTED SELF-ASSEMBLY 审中-公开
    为指导自组织生成指导模板的方法

    公开(公告)号：US20160266486A1

    公开(公告)日：2016-09-15

    申请号：US15034810

    申请日：2014-10-10

    Applicant: ASML NETHERLANDS B.V.

    Inventor： Sander Frederik WUISTER ,  Davide AMBESI

    IPC: G03F1/70 ,  G06F17/50

    CPC classification number: G03F1/70 ,  G03F7/0002 ,  G06F17/5068 ,  G06F2217/12

    Abstract: A method of designing a feature guiding template for guiding self-assembly of block copolymer to form at least two features in a design layout for lithography, the feature guiding template including at least two portions joined by a bottleneck, the method including determining a characteristic of the feature guiding template based on at least a function of geometry of the feature guiding template including a value of a first width of at least one of the portions, a value of a second width of the bottleneck, or a value based on both the first width and the second width.

    Abstract translation: 一种设计特征引导模板的方法，用于引导嵌段共聚物的自组装以在用于光刻的设计布局中形成至少两个特征，所述特征引导模板包括由瓶颈连接的至少两个部分，所述方法包括确定 所述特征引导模板至少基于所述特征引导模板的几何形状的函数，所述特征引导模板包括所述部分中的至少一个部分的第一宽度的值，所述瓶颈的第二宽度的值或基于所述第一 宽度和第二宽度。

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