摘要:
A method of measuring a pattern by using a display microscope image comprises a step of setting an edge detection reference line by designating a range of detecting an edge and a number of edge points with regard to a respective side portion of the pattern in the microscope image, a step of sampling the edge point constituting a point of changing a brightness from image information by searching the edge point from a direction orthogonal to the set edge detection reference line, a step of providing a line approximating the respective side portion of the pattern based on position information of a plurality of the edge points and a step of specifying a shape of the pattern by an intersecting point of two pieces of lines, a specified point provided by a plurality of intersecting points, an angle made by two pieces of straight lines and a distance between two specified points from information of the approximated line approximating the respective side portion of the pattern.
摘要:
A network system has a first LAN, a second LAN, and a storage device for storing data accessible from the first LAN and the second LAN. A control apparatus controls accessibility of the data stored in the storage device from the first LAN and the second LAN. The control apparatus includes an access prevention device for preventing access from the first LAN to the second LAN and from the second LAN to the first LAN and a device for overriding a setting of the access prevention device to allow accessibility of the second LAN from the first LAN.
摘要:
In order to establish processing techniques capable of making multi-tip probes with sub-micron intervals and provide such microscopic multi-tip probes, there is provided an outermost surface analysis apparatus for semiconductor devices etc. provided with a function for enabling positioning to be performed in such a manner that there is no influence on measurement in electrical measurements at an extremely small region using this microscopic multi-tip probe, and there are provided the steps of making a cantilever 1 formed with a plurality of electrodes 3 using lithographic techniques, and forming microscopic electrodes 6 minute in pitch by sputtering or gas-assisted etching a distal end of the cantilever 1 using a focused charged particle beam or using CVD.
摘要:
In a sample analysis method, positional coordinates of reference points on a surface of the sample are measured using a first device. Positional coordinates of an object on the surface of the sample to be analyzed are also measured using the first device. A sample piece containing on a surface thereof a preselected number of the reference points and the object is removed from the sample. The sample piece is then mounted on a second device different from the first device. The positional coordinates of the reference points on the surface of the sample piece are then measured using the second device. The positional coordinates of the object on the surface of the sample piece are then calculated using the positional coordinates of the reference points measured by the second device and the positional coordinates of the object measured by the first device. The object on the surface of the sample piece is then analyzed.
摘要:
A superconducting radiation detector relies upon the abruptness of a superconducting transition edge to converts a slight heat generated by an X-ray into a high signal current and uses an electrothermal self-feedback mechanism to provide a high energy resolution and a high counting rate. A calorimeter incorporating such a radiation detector has an absorber for absorbing X-rays, a resistor formed of a superconductor provided under the absorber and having a resistance value that varies with heat generated in the absorber, superconducting wires for connecting the resistor to an external current detector, a membrane on which the resistor is provided, and an insulating film provided between the resistor and the absorber and having at least one hole penetrating therethrough, the resistor and the absorber being in contact through the hole.
摘要:
A method is provided for repairing a phase shift mask. The phase shift mask has a substrate and a shifter containing a defect and disposed on the substrate. An ion beam is irradiated onto the defect while a region of the shifter that includes the defect is supplied with a first gas containing silicon, an oxidizing second gas, and a third gas for controlling an amount of ions from the ion beam which penetrate the region of the shifter to form a silicon thin film on the defect and thereby repair the phase shift mask.
摘要:
An apparatus for processing and observing a sample has a sample stage for supporting a sample at a preselected location thereof, a focused ion beam irradiation system for irradiating the sample with a focused ion beam along an optical axis to cut out a portion from the sample, and a side entry stage disposed over the sample stage and extending slantingly with respect to the optical axis of the focused ion beam irradiated by the focused ion beam irradiation system. The side entry stage has a microscope sample holder for picking up the cut-out sample portion directly from the preselected location of the sample and for supporting the sample portion. The microscope sample holder is configured to be removed from the side entry stage while supporting the sample portion and to be connected to an entry stage of a microscope device for observing the sample portion.
摘要:
A probe for a scanning probe microscope has a cantilever portion and a microscopic probe portion formed of a solid columnar tip at a distal end of the cantilever portion by deposition using an organic gas decomposed by a focused ion beam inside a vacuum chamber. The probe is sufficiently narrow and has high abrasion resistance and rigidity. The tip may be grown to extend from the cantilever portion at an angle shifted by an angle at which the cantilever portion is inclined during scanning of the probe portion across a sample surface, so that the columnar tip is perpendicular to the sample surface during the scanning. The tip may be formed of a conductive material such as tungsten of diamond-like carbon by FIB-CVD.
摘要:
In a local softening point measuring apparatus and thermal conductivity measuring apparatus using a probe microscope as a base, environment of the prob˜ and a sample surface is set to 1/100 atmospheric pressure (103 Pa) or lower. Otherwise, a side surface of the probe is coated with a thermal insulation material having a thickness that enables thermal dissipation to be reduced to 1/100 or lower, to thereby reduce the thermal dissipation from the side surface of the probe, and exchange heat substantially only at the contacting portion between the probe and the sample surface.
摘要:
Provided is a method of evaluating a probe tip shape in a scanning probe microscope, including: measuring the probe tip shape by a probe shape test sample having a needle-like structure; determining radii of cross-sections at a plurality of distances from the apex; and calculating, based on the distances and the radii, a radios of curvature when the probe tip shape is approximated by a circle.