公开(公告)号：US5929827A

公开(公告)日：1999-07-27

申请号：US330669

申请日：1994-10-28

Applicant: Aoji Isono ,  Yoshiyuki Osada ,  Hidetoshi Suzuki ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Noritake Suzuki ,  Yasuyuki Todokoro

Inventor： Aoji Isono ,  Yoshiyuki Osada ,  Hidetoshi Suzuki ,  Eiji Yamaguchi ,  Toshihiko Takeda ,  Hiroaki Toshima ,  Noritake Suzuki ,  Yasuyuki Todokoro

IPC: G09G3/22 ,  H01J1/316 ,  H01J9/02 ,  H01J31/12

CPC classification number: B82Y10/00 ,  G09G3/22 ,  H01J1/316 ,  H01J31/127 ,  H01J9/027 ,  G09G2300/0885 ,  G09G2310/06 ,  H01J2201/3165 ,  H01J2201/319

Abstract: This invention relates to an electron source and an image forming apparatus each of which particularly comprises a surface conduction type electron emitting element as an electron emitting element, a method of manufacturing an electron source and an image forming apparatus, in which the energization forming treatment step of the surface conduction type electron emitting element is performed by applying a voltage to an electron emitting portion formation thin film via a nonlinear element connected in series with the thin film and having nonlinear voltage/current characteristics, an electron source and an image forming apparatus in each of which the nonlinear element is connected in series with the surface conduction type electron emitting element, and a method of driving the same.

Abstract translation: 本发明涉及一种电子源和图像形成装置，其特别包括作为电子发射元件的表面传导型电子发射元件，制造电子源的方法和图像形成装置，其中激励形成处理步骤 的表面传导型电子发射元件是通过经由与薄膜串联连接并具有非线性电压/电流特性的非线性元件向电子发射部分形成薄膜施加电压，电子源和图像形成装置 其中每个非线性元件与表面传导型电子发射元件串联连接，以及驱动该方法。

公开(公告)号：US5900301A

公开(公告)日：1999-05-04

申请号：US779145

申请日：1997-01-03

Applicant: George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： George E. Brandes ,  Jonathan C. Twichell ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  B05D5/12

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: Fabrication of an electron-emitting device entails distributing electron-emissive carbon-containing particles (22) over a non-insulating region (12). The particles can be made electron emissive after the particle distributing step. Particle bonding material (24) is typically provided to bond the particles to the non-insulating region. The particle bonding material can include carbide formed by heating or/and can be created by modifying a layer (32) provided between the non-insulating region and the particles. In one embodiment, the particles emit electrons primarily from graphite or/and amorphous carbon regions. In another embodiment, the particles are made electron-emissive prior to the particle distributing step.

Abstract translation: 电子发射器件的制造需要在非绝缘区域（12）上分布电子发射含碳颗粒（22）。 在颗粒分布步骤之后，颗粒可以被制成电子发射。 通常提供颗粒粘合材料（24）以将颗粒结合到非绝缘区域。 粒子接合材料可以包括通过加热形成的碳化物和/或可以通过改变设置在非绝缘区域和颗粒之间的层（32）而形成的碳化物。 在一个实施方案中，颗粒主要从石墨或/和无定形碳区域发射电子。 在另一个实施方案中，颗粒在颗粒分布步骤之前被制成电子发射的。

公开(公告)号：US5856812A

公开(公告)日：1999-01-05

申请号：US637353

申请日：1996-04-24

Applicant: Glen E. Hush ,  Tyler A. Lowrey

Inventor： Glen E. Hush ,  Tyler A. Lowrey

IPC: G09G3/20 ,  G09G3/22 ,  H01J31/12

CPC classification number: G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  G09G2310/0248 ,  G09G2310/0259 ,  G09G2310/066 ,  G09G2320/0606 ,  G09G2320/0626 ,  G09G2320/066 ,  G09G3/2011 ,  G09G3/2014 ,  H01J2201/319 ,  H01J2329/00

Abstract: A flat panel display, such as a Field Emission Display ("FED"), is disclosed having a current control circuit. Input into the display, initially, is an analog signal having an amplitude. In one embodiment, the current control circuit includes a converter for converting the analog input signal to a sawtooth signal having a height and width. Then, the level of the sawtooth signal is compared to a voltage level to establish a pulse width of an emitter current. The emitter current is thus controlled by a pulse width modulation approach. In another embodiment, the current control circuit traps a column voltage on a parasitic capacitance. The trapped voltage then controls the gate of a transistor to control current flow from the emitter set to ground.

公开(公告)号：US5837331A

公开(公告)日：1998-11-17

申请号：US614703

申请日：1996-03-13

Applicant: Eric P. Menu ,  John Song ,  Bernard F. Coll

Inventor： Eric P. Menu ,  John Song ,  Bernard F. Coll

IPC: C23C14/06 ,  C23C14/54 ,  C23C16/34 ,  H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H05H1/24 ,  B05D1/36 ,  B05D5/12 ,  C23C16/00

CPC classification number: C23C16/342 ,  C23C14/0605 ,  C23C14/548 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30457 ,  H01J2201/319

Abstract: An amorphous multi-layered structure (100, 200) is formed by a method including the steps of: i) positioning a deposition substrate (101) in a physical vapor deposition apparatus (300, 400, 500) ii) ionizing a precursor of a multi-phase material within the physical vapor deposition apparatus (300, 400, 500) iv) modulating the total ion impinging energy of the ions to deposit layers having predetermined properties corresponding to the total ion impinging energy values.

Abstract translation: 通过包括以下步骤的方法形成非晶多层结构（100,200）：i）将沉积基板（101）定位在物理气相沉积设备（300,400,500）中，ii）将 物理气相沉积装置（300,400,500）内的多相材料iv）调节离子的总离子冲击能量以沉积具有对应于总离子冲击能量值的预定特性的层。

公开(公告)号：US5831378A

公开(公告)日：1998-11-03

申请号：US918766

申请日：1997-08-25

Applicant: J. Brett Rolfson ,  Kevin Tjaden

Inventor： J. Brett Rolfson ,  Kevin Tjaden

IPC: H01J9/02 ,  H01L21/3105 ,  H01J1/16 ,  H01J1/02 ,  H01J1/62 ,  H01J19/10

CPC classification number: H01L21/31053 ,  H01J9/025 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2209/0226

Abstract: A field emitter display having reduced surface leakage comprising at least one emitter tip surrounded by a dielectric region. The dielectric region is formed of a composite of insulative layers, at least one of which has fins extending toward the emitter tip. A conductive gate, for extracting electrons from the emitter tip, is disposed superjacent the dielectric region. The fins increase the length of the path that leaked electrical charge travels before impacting the gate.

Abstract translation: 具有减小的表面泄漏的场发射器显示器包括由电介质区域包围的至少一个发射极尖端。 电介质区域由绝缘层的复合体形成，其中至少一个具有朝向发射极尖端延伸的翅片。 用于从发射极尖端提取电子的导电栅极设置在电介质区域的上方。 在撞击门之前，翅片增加了泄漏电荷行进路径的长度。

公开(公告)号：US5825122A

公开(公告)日：1998-10-20

申请号：US619704

申请日：1996-03-26

Applicant: Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

Inventor： Evgeny Invievich Givargizov ,  Viktor Vladimirovich Zhirnov ,  Alla Nikolaevna Stepanova ,  Lidiya Nikolaevna Obolenskaya

IPC: H01J31/12 ,  H01J1/304 ,  H01J19/24 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/00

Abstract: A matrix field-emission cathode (5) comprises a monocrystalline silicon substrate (7) on which are arranged epitaxially grown pointed silicon emitters (1) which also act as ballast resistors connected in series to the emitters. In an advantageous embodiment of the proposed cathode, for a radius of curvature (r) at the emitter tip not exceeding 10 nm, the ratio of the height (h) of the emitter to the radius (r) is not less than 1000, while the ratio of height (h) to the diameter (D) at the emitter base is not less than 1. The angle .alpha. at the emitter tip does not exceed 30.degree.. The specific resistance of the emitter material is chosen so as to ensure that the resistance of each emitter will be comparable with the resistance between the cathode and the opposing electrode. The proposed cathode is used in an electronic device for displaying information which also has an anode (3) in the form of a strip (11) of phosphorescent material (10) and a conducting layer (9) whose projection onto the cathode (5) is perpendicular to the conducting paths (6) on the cathode; the anode itself acts as the control electrode.

Abstract translation: PCT No.PCT / RU95 / 00154 Sec。 371日期1997年3月26日 102（e）1997年3月26日PCT PCT 1995年7月18日PCT公布。 公开号WO96 / 03762 日期1996年2月8日A矩阵场致发射阴极（5）包括单晶硅衬底（7），其上布置有外延生长的尖晶硅发射体（1），其也用作与放射器串联连接的镇流电阻器。 在所提出的阴极的有利实施例中，对于发射极尖端处的曲率半径（r）不超过10nm，发射器的高度（h）与半径（r）之比不小于1000，而 发射极底部的高度（h）与直径（D）的比值不小于1.发射极尖端的角度α不超过30°。 选择发射极材料的电阻率，以确保每个发射极的电阻与阴极和相对电极之间的电阻相当。 所提出的阴极用于显示信息的电子设备中，该电子设备还具有磷光材料条带（11）形式的阳极（3）和在阴极（5）上投影的导电层（9） 垂直于阴极上的导电路径（6）; 阳极本身用作控制电极。

公开(公告)号：US5801477A

公开(公告)日：1998-09-01

申请号：US383410

申请日：1995-01-31

Applicant: John M. Macaulay

Inventor： John M. Macaulay

IPC: H01J1/30 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J29/04 ,  H01J31/12 ,  H01J1/02

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness "s" and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width "r" along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point "O". Each filament includes a filament tip terminating at a point "A". A majority of all filament tips of the display have a length "L" between each filament tip at point A and point O along the filament axis where, L.ltoreq.(s+r)/2.

Abstract translation: 用于场致发射显示器的门控灯丝结构包括多个灯丝。 包括衬底，邻近衬底定位的绝缘层以及与绝缘层相邻的金属栅极层位置。 金属栅极层具有多个栅极，金属栅极层具有平均厚度“s”以及基本上平行于底部金属栅极层平面的顶部金属栅极层平坦表面。 金属栅极层包括延伸通过栅极的多个孔。 每个孔具有沿着孔的底部平坦表面的平均宽度“r”。 每个孔限定平行于并等距离顶部金属栅极层平面和底部金属栅极层平面的中点平面。 多个细丝单独地定位在孔中。 每根灯丝都有一个灯丝轴线。 灯丝轴和中点平面的交点定义点“O”。 每个细丝包括终止于“A”点的细丝末端。 显示器的所有灯丝尖端的大部分在点A处的每个灯丝尖端和灯丝轴线处的点O之间具有长度“L”，其中L i =（s + r）/ 2。

公开(公告)号：US5772485A

公开(公告)日：1998-06-30

申请号：US821128

申请日：1997-03-20

Applicant: Shin-Puu Jeng ,  Bruce E. Gnade

Inventor： Shin-Puu Jeng ,  Bruce E. Gnade

IPC: C01B3/02 ,  H01J1/304 ,  H01J9/02 ,  H01J29/94 ,  H01J9/00 ,  C01B3/00 ,  H01J9/38 ,  H01J19/24

CPC classification number: H01J1/3042 ,  C01B3/02 ,  H01J29/94 ,  H01J9/025 ,  H01J2201/319 ,  H01J2329/00

Abstract: An emitter structure 12 for use in a field emission display device comprises a ballast layer 17 overlying an electrically conductive coating 16 (cathode electrode), which is itself formed on an electrically insulating substrate 18. A gate electrode comprises a coating of an electrically conductive material 22 which is deposited on an insulating layer 20. Cone-shaped microtips 14 formed within apertures 34 through conductive layer 22 and insulating layer 20. In the present invention, insulating layer 20 comprises a dielectric material capable of desorbing at least ten atomic percent hydrogen, which may illustratively comprise hydrogen silsesquioxane (HSQ). HSQ is an abundant source of hydrogen which keeps deleterious oxides from forming on microtip emitters 14. HSQ also reduces the capacitance formed by cathode electrode 16 and gate electrode 22, since its relative dielectric constant is less than 3.5. In alternative embodiments, the gate insulation layer 20 additionally includes one or more sublayers of a more dense insulating material 20b and 20c, typically a plasma deposited silicon dioxide.

Abstract translation: 用于场致发射显示装置的发射极结构12包括覆盖在导电涂层16（阴极电极）上的压载层17，其本身形成在电绝缘基板18上。栅电极包括导电材料 沉积在绝缘层20上的锥形微尖头14形成在孔34内，通过导电层22和绝缘层20.在本发明中，绝缘层20包括能够解吸至少十个原子百分比的氢的电介质材料， 其可以说明性地包含氢倍半硅氧烷（HSQ）。 HSQ是丰富的氢源，其在微尖端发射体14上保持有害氧化物的形成。由于其相对介电常数小于3.5，所以HSQ还降低了由阴极电极16和栅电极22形成的电容。 在替代实施例中，栅极绝缘层20另外包括一个或多个更致密的绝缘材料20b和20c的子层，通常为等离子体沉积的二氧化硅。

公开(公告)号：US5717279A

公开(公告)日：1998-02-10

申请号：US607465

申请日：1996-02-27

Applicant: Hironori Imura

Inventor： Hironori Imura

IPC: H01J1/304 ,  B81B1/00 ,  H01J3/02 ,  H01J1/30 ,  H01J19/24

CPC classification number: H01J3/022 ,  H01J2201/319

Abstract: A field emission cold cathode includes a conductive substrate (1), an insulating layer (2) disposed on the substrate (1), a gate electrode (3) disposed on the insulating layer (2), cavities (4) extending through the gate electrode (3) and the insulating layer (2), and emitter cones (6) disposed on the substrate (1) within the cavities (4). The gate electrode further includes high resistance areas (5) disposed around the tips of the emitter cones (6) that enables the field emission cold cathode to operate in the event of a short circuit between the gate electrode (3) and an emitter cone (6) due to electrically conductive foreign material entering a cavity (4). The field emission cold cathode can be use in an electron gun.

Abstract translation: 场致发射冷阴极包括导电基板（1），设置在基板（1）上的绝缘层（2），设置在绝缘层（2）上的栅电极（3），延伸穿过栅极 电极（3）和绝缘层（2）以及设置在空腔（4）内的基板（1）上的发射极（6）。 栅电极还包括围绕发射极（6）的尖端设置的高电阻区域（5），其使得场致发射冷阴极能够在栅极（3）和发射极锥体（3）之间发生短路的情况下操作 6）由于导电异物进入空腔（4）。 场致发射冷阴极可用于电子枪。

公开(公告)号：US5669801A

公开(公告)日：1997-09-23

申请号：US535505

申请日：1995-09-28

Applicant: Edward C. Lee

Inventor： Edward C. Lee

IPC: H01J9/02

CPC classification number: H01J9/025 ,  H01J2201/319

Abstract: A microtip of a field emission device cathode (10) may be fabricated by forming a dielectric layer (18) on an upper surface of a resistive layer (16). A gate layer (20) is formed on the dielectric layer (18). An opening is formed in the gate layer (20) and a microtip cavity (28) is formed in the dielectric layer (18). The microtip cavity (28) extends through the opening in the gate layer (20) to the resistive layer (16). Layers of metal are formed on the gate layer (20) and the resistive layer (16) such that a microtip (30) is formed within the microtip cavity (28). Finally, polishing is performed to remove a portion of the overburden or layers of metal on the gate layer (20). The polishing continues until the microtip (30) is exposed.

Abstract translation: 可以通过在电阻层（16）的上表面上形成介电层（18）来制造场发射器件阴极（10）的微尖端。 在电介质层（18）上形成栅极层（20）。 在栅极层（20）中形成开口，在电介质层（18）中形成微尖端腔（28）。 微尖端腔（28）延伸穿过栅极层（20）中的开口至电阻层（16）。 在栅极层（20）和电阻层（16）上形成金属层，使得在微尖端腔（28）内形成微尖端（30）。 最后，进行抛光以去除栅极层（20）上的一部分上覆层或金属层。 抛光继续，直到微尖端（30）暴露。