Abstract:
An electron beam apparatus for irradiating a target with an electron beam includes a reference sample including at least one reference pattern which has a plurality of lattice structures arranged along the circumference of a circle in a evaluation surface of the reference sample; and an adjustment section for adjusting the electron beam by irradiating the evaluation surface with the electron beam on the basis of electrons generated from the reference sample.
Abstract:
A blur and image distortion of an electron beam on a sample are reduced even at a large converging angle of the electron beam. A reduction projection optical system (120) has an immersion lens (108) on the image plane (wafer 111) side. A collimator lens (pupil control optical system) 106 is arranged between the reduction projection optical system (120) and its object plane (mask 104). The collimator lens (106) arranges the entrance pupil (110) of the reduction projection optical system (120) at a finite position from the image plane on the downstream side of the image plane of the reduction projection optical system (120). This can minimize any blur and image distortion of an electron beam on a sample.
Abstract:
An object of the present invention is to provide a charged particle beam apparatus and an alignment method of the charged particle beam apparatus, which make it possible to align an optical axis of a charged particle beam easily even when a state of the charged particle beam changes. The present invention comprises calculation means for calculating a deflection amount of an alignment deflector which performs an axis alignment for an objective lens, a plurality of calculation methods for calculating the deflection amount is memorized in the calculation means, and a selection means for selecting at least one of the calculation methods is provided.
Abstract:
Electron-beam sources are disclosed that exhibit substantially reduced spherical aberration compared to conventional sources. In a beam produced by the cathode of such a source, axially propagating electrons are subjected to a lens action by voltage applied to a Wehnelt electrode and an extraction electrode. The cathode includes a peripheral portion that is nulldrawn backnull (displaced along the axis of the source away from the beam-propagation direction) relative to a center portion of the cathode. With such a cathode, the percentage of dimensions of the crossover involved in spherical aberration of the crossover is reduced. This improves the uniformity of beam current at a lithographic substrate and minimizes location-dependency of the aperture angle. Since the Wehnelt voltage can be reduced, positional changes in the electrical field at the cathode surface are reduced, and the distribution of electrons in the beam propagating from the cathode surface is made more uniform than conventionally.
Abstract:
An improved particle lens has an axis which is shifted to follow the central ray as it is deflected through the lens creating, in effect, a variable curvilinear optical axis for the lens. The variable curvilinear optical axis is created for the lens so that the axis varies proportionally to the magnitude of the beam deflection. The optical axis of the lens is shifted by applying a uniform field to the lens to cancel the first term of the radial field with a function that is dependent on the position along the z-axis. This function is the trajectory of the central ray of the electron beam.
Abstract:
A set of methods of processing a set of Kikuchi diffraction patterns acquired for a series of incident positions of an electron beam on a sample material are described. One such method involves the steps of identifying a first pattern in the set containing a matrix signal and suspected of additionally containing a secondary phase signal; identifying a second pattern close to the first pattern which contains a matrix signal without containing a secondary phase signal; modifying the contrast and intensity of either the first pattern or the second pattern, the modification depending on a relative property of the first and second patterns, resulting in a modified first or second pattern; and obtaining a secondary phase signal pattern by either i) if the first pattern was modified, subtracting the original second pattern from the modified first pattern; or ii) if the second pattern was modified, subtracting the modified second pattern from the original first pattern.
Abstract:
A method of operating a charged particle microscope comprises: providing settings of a focus, an x-stigmator and an y-stigmator of the charged particle microscope; and then repeatedly performing adjusting the charged particle microscope to the settings, recording an image of an object using the settings, determining a sharpness measure from the recorded image, and changing at least one of the settings of the focus, the x-stigmator and the y-stigmator based on the sharpness measure until a stop criterion is fulfilled. Herein, the determining of the sharpness measure comprises: determining an orientation of an intensity gradient at each of a plurality of locations within one of the recorded image and a processed image generated by processing the recorded image, and determining the sharpness measure based on the plurality of determined orientations.
Abstract:
A method of adjusting a stigmator in a particle beam apparatus comprises directing a particle beam onto a sample wherein the particle beam traverses a quadrupole field 37 generated by energizing at least four field generators of the stigmator; acquiring first and second images of the sample at different field strengths of the quadrupole field while energizing the at least four field generators according to a first setting of a plurality of settings; acquiring third and fourth images of the sample at different field strengths of the quadrupole field 37 while energizing the at least four field generators according to a second setting of the plurality of settings; determining a plurality of image displacements based on the first, second, third and fourth images; determining an optimum setting of the at least four field generators based on the plurality of image displacements and the plurality of settings.
Abstract:
A method of adjusting a stigmator in a particle beam apparatus comprises directing a particle beam onto a sample wherein the particle beam traverses a quadrupole field 37 generated by energizing at least four field generators of the stigmator; acquiring first and second images of the sample at different field strengths of the quadrupole field while energizing the at least four field generators according to a first setting of a plurality of settings; acquiring third and fourth images of the sample at different field strengths of the quadrupole field 37 while energizing the at least four field generators according to a second setting of the plurality of settings; determining a plurality of image displacements based on the first, second, third and fourth images; determining an optimum setting of the at least four field generators based on the plurality of image displacements and the plurality of settings.
Abstract:
The present invention provides an electron beam apparatus comprising a means for visualizing an axial displacement of a retarding electric field, and a means for adjusting axial displacement. The axial displacement visualizing means includes a reflective plate (6), and an optical system (2, 3) for converging a secondary electron beam (9) on the reflective plate (6), and the axial displacement adjusting means includes an incline rotation mechanism (8) for a sample stage (5). With this configuration, in electron beam apparatuses such as SEM and the like, such problems as visual field displacement caused by displacement of the axial symmetry of the electric field between an objective lens (3) and a sample (4) and inability to measure secondary electrons and reflected electrons that provide desired information can be eliminated.