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    SILICON WAFER AND FABRICATION METHOD THEREOF
    31.
    发明申请
    SILICON WAFER AND FABRICATION METHOD THEREOF 有权
    硅波及其制造方法

    公开(公告)号：US20110227202A1

    公开(公告)日：2011-09-22

    申请号：US13150493

    申请日：2011-06-01

    申请人： Jung-Goo Park

    发明人： Jung-Goo Park

    IPC分类号： H01L29/06 ,  H01L21/322

    CPC分类号： H01L29/06 ,  H01L21/2253 ,  H01L21/2652 ,  H01L21/3225 ,  H01L27/11

    摘要： A silicon wafer and fabrication method thereof are provided. The silicon wafer includes a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer, the first denuded zone being formed with a depth ranging from approximately 20 μm to approximately 80 μm from the top surface, and a bulk area formed between the first denuded zone and a backside of the silicon wafer, the bulk area having a concentration of oxygen uniformly distributed within a variation of 10% over the bulk area.

    摘要翻译： 提供硅晶片及其制造方法。 所述硅晶片包括从所述硅晶片的顶表面形成有预定深度的第一裸露区域，所述第一裸露区域形成有距离所述顶表面约20μm至约80μm的深度，并且形成的体积面积 在第一裸露区域和硅晶片的背面之间，具有在体积区域上均匀分布在10％变化范围内的氧浓度的体积区域。

    Manufacturing method for silicon wafer
    33.
    发明授权
    Manufacturing method for silicon wafer 有权
    硅晶片的制造方法

    公开(公告)号：US07977219B2

    公开(公告)日：2011-07-12

    申请号：US12512229

    申请日：2009-07-30

    申请人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

    发明人： Hiromichi Isogai ,  Takeshi Senda ,  Eiji Toyoda ,  Kumiko Murayama ,  Koji Izunome ,  Susumu Maeda ,  Kazuhiko Kashima

    IPC分类号： H01L21/20

    CPC分类号： C30B29/06 ,  C30B15/00 ,  C30B33/02 ,  H01L21/3225

    摘要： In a manufacturing method for a silicon wafer, a first heat treatment process is performed on the silicon wafer while introducing a first gas having an oxygen gas in an amount of 0.01 vol. % or more and 1.00 vol. % or less and a rare gas, and a second heat treatment process is performed while stopping introducing the first gas and introducing a second gas having an oxygen gas in an amount of 20 vol. % or more and 100 vol. % or less and a rare gas. In the first heat treatment process, the silicon wafer is rapidly heated to first temperature of 1300° C. or higher and a melting point of silicon or lower at a first heating rate, and kept at the first temperature. In the second heat treatment process, the silicon wafer is kept at the first temperature, and rapidly cooled from the first temperature at a first cooling rate.

    摘要翻译： 在硅晶片的制造方法中，在硅晶片上进行第一热处理工艺，同时引入具有0.01体积％的氧气的第一气体。 ％以上1.00体积％ ％以下和稀有气体，并且在停止引入第一气体并引入具有20体积％的氧气的第二气体的同时进行第二热处理工艺。 ％以上100体积％ ％以下，稀有气体。 在第一热处理工艺中，将硅晶片以第一加热速率快速加热到1300℃或更高的第一温度和硅的熔点或更低，并保持在第一温度。 在第二热处理工艺中，将硅晶片保持在第一温度，并以第一冷却速度从第一温度快速冷却。

    Silicon wafer and fabrication method thereof
    34.
    发明授权
    Silicon wafer and fabrication method thereof 有权
    硅晶片及其制造方法

    公开(公告)号：US07977216B2

    公开(公告)日：2011-07-12

    申请号：US12500901

    申请日：2009-07-10

    申请人： Jung-Goo Park

    发明人： Jung-Goo Park

    IPC分类号： H01L21/00 ,  H01L21/20 ,  H01L21/36 ,  H01L21/322

    CPC分类号： H01L29/06 ,  H01L21/2253 ,  H01L21/2652 ,  H01L21/3225 ,  H01L27/11

    摘要： Provided is a silicon wafer including: a first denuded zone formed with a predetermined depth from a top surface of the silicon wafer; and a bulk area formed between the first denuded zone and a backside of the silicon wafer, wherein the first denuded zone is formed with a depth ranging from approximately 20 um to approximately 80 um from the top surface, and wherein a concentration of oxygen in the bulk area is uniformly distributed within a variation of 10% over the bulk area.

    摘要翻译： 提供了一种硅晶片，其包括：从硅晶片的顶表面形成有预定深度的第一裸露区域; 以及形成在所述第一裸露区域和所述硅晶片的背面之间的主体区域，其中所述第一裸露区域形成有距离所述顶表面约20μm至约80μm的深度，并且其中所述第一裸露区域中的氧浓度 散装面积在体积面积上均匀分布在10％的变化范围内。

    Silicon substrate and manufacturing method thereof
    35.
    发明授权
    Silicon substrate and manufacturing method thereof 有权
    硅基片及其制造方法

    公开(公告)号：US07915145B2

    公开(公告)日：2011-03-29

    申请号：US12391723

    申请日：2009-02-24

    申请人： Kazunari Kurita ,  Shuichi Omote

    发明人： Kazunari Kurita ,  Shuichi Omote

    IPC分类号： H01L21/322

    CPC分类号： H01L21/3221 ,  C30B15/00 ,  C30B29/06 ,  H01L21/30625 ,  H01L21/3225 ,  H01L29/7849

    摘要： A silicon substrate is manufactured from single-crystal silicon which is grown to have a carbon concentration equal to or higher than 1.0×1016 atoms/cm3 and equal to or lower than 1.6×1017 atoms/cm3 and an initial oxygen concentration equal to or higher than 1.4×1018 atoms/cm3 and equal to or lower than 1.6×1018 atoms/cm3 by a CZ method. A device is formed on a front, the thickness of the silicon substrate is equal to or more than 5 μm and equal to or less than 40 μm, and extrinsic gettering which produces residual stress equal to or more than 5 Mpa and equal to or less than 200 Mpa is applied to a back face of the substrate.

    摘要翻译： 硅衬底由生长至碳浓度等于或高于1.0×1016原子/ cm3并且等于或低于1.6×1017原子/ cm3并且初始氧浓度等于或更高的单晶硅制造 通过CZ法为1.4×1018原子/ cm3以上且1.6×1018原子/ cm3以下。 器件形成在前面，硅衬底的厚度等于或大于5μm且等于或小于40μm，产生等于或大于5Mpa且等于或等于或等于5Mpa的残余应力的外部吸气 超过200Mpa被施加到基板的背面。

    Silicon wafer for IGBT and method for producing same
    37.
    发明授权
    Silicon wafer for IGBT and method for producing same 有权
    IGBT硅晶片及其制造方法

    公开(公告)号：US07846252B2

    公开(公告)日：2010-12-07

    申请号：US11877806

    申请日：2007-10-24

    申请人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

    发明人： Shigeru Umeno ,  Yasuhiro Oura ,  Koji Kato

    IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B21/04

    CPC分类号： H01L29/32 ,  H01L21/3221 ,  H01L21/3225 ,  Y10T428/31663

    摘要： A silicon wafer for an IGBT is produced by forming an ingot having an interstitial oxygen concentration [Oi] of not more than 7.0×1017 atoms/cm3 by the Czochralski method; doping phosphorus in the ingot by neutron beam irradiation to the ingot; slicing a wafer from the ingot; performing annealing of the wafer in an oxidizing atmosphere containing at least oxygen at a temperature satisfying a predetermined formula; and forming a polysilicon layer or a strained layer on one side of the wafer.

    摘要翻译： 通过使用Czochralski法形成具有不大于7.0×10 17原子/ cm 3的间隙氧浓度an的晶锭，制造IGBT的硅晶片; 通过中子束照射锭来在锭中掺杂磷; 从锭切片晶片; 在满足预定公式的温度下，在至少含有氧的氧化气氛中进行晶片退火; 以及在晶片的一侧上形成多晶硅层或应变层。

    Process for regenerating layer transferred wafer
    40.
    发明授权
    Process for regenerating layer transferred wafer 有权
    再生层转移晶片的工艺

    公开(公告)号：US07763541B2

    公开(公告)日：2010-07-27

    申请号：US11563981

    申请日：2006-11-28

    申请人： Hidehiko Okuda ,  Akihiko Endo ,  Tatsumi Kusaba

    发明人： Hidehiko Okuda ,  Akihiko Endo ,  Tatsumi Kusaba

    IPC分类号： H01L21/302

    CPC分类号： H01L21/3247 ,  H01L21/304 ,  H01L21/30625 ,  H01L21/3225 ,  H01L21/76254

    摘要： There is provided a layer transferred wafer subjected to a process for regenerating to be reused many times for an SOI layer wafer which is used to manufacture an SOI wafer with an excellent process yield in which oxygen precipitate nuclei or oxygen precipitates are eliminated and generation of HF defects are inhibited by performing the process for regenerating the layer transferred wafer generated as a by-product by an ion implantation separation method.The process for regenerating a layer transferred wafer in which the layer transferred wafer 11b obtained as a by-product in manufacturing a bonded SOI wafer 10 by an ion implantation separation method so as to be reused for an SOI layer wafer 11 of the bonded SOI wafer 10, comprises: rapidly heating the layer transferred wafer 11b in an oxidizing atmosphere, then holding it for a fixed time and subsequently rapidly cooling it; and mirror-polishing a surface of the layer transferred wafer 11b.

    摘要翻译： 提供了经过再生处理的层转移晶片，对于用于制造SOI晶片的SOI层晶片多次重复使用，其具有优异的工艺成品率，其中氧沉淀核或氧沉淀物被消除，产生HF 通过进行用于再生通过离子注入分离方法作为副产物产生的层转移晶片的过程来抑制缺陷。 再生层转移晶片的处理，其中通过离子注入分离方法在制造接合的SOI晶片10中作为副产物获得的作为副产物的晶片11b被再次用于接合的SOI晶片的SOI层晶片11 10，包括：在氧化气氛中快速加热转移晶片11b，然后保持固定时间，随后快速冷却; 并镜面抛光转印晶片11b的表面。